JP2012156251A5 - - Google Patents

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Publication number
JP2012156251A5
JP2012156251A5 JP2011013180A JP2011013180A JP2012156251A5 JP 2012156251 A5 JP2012156251 A5 JP 2012156251A5 JP 2011013180 A JP2011013180 A JP 2011013180A JP 2011013180 A JP2011013180 A JP 2011013180A JP 2012156251 A5 JP2012156251 A5 JP 2012156251A5
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JP
Japan
Prior art keywords
insulating layer
electrode pad
wiring
semiconductor chip
semiconductor package
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Application number
JP2011013180A
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English (en)
Japanese (ja)
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JP2012156251A (ja
JP5715835B2 (ja
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Priority to JP2011013180A priority Critical patent/JP5715835B2/ja
Priority claimed from JP2011013180A external-priority patent/JP5715835B2/ja
Priority to US13/354,663 priority patent/US9142524B2/en
Publication of JP2012156251A publication Critical patent/JP2012156251A/ja
Publication of JP2012156251A5 publication Critical patent/JP2012156251A5/ja
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Publication of JP5715835B2 publication Critical patent/JP5715835B2/ja
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JP2011013180A 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法 Active JP5715835B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011013180A JP5715835B2 (ja) 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法
US13/354,663 US9142524B2 (en) 2011-01-25 2012-01-20 Semiconductor package and method for manufacturing semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011013180A JP5715835B2 (ja) 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2012156251A JP2012156251A (ja) 2012-08-16
JP2012156251A5 true JP2012156251A5 (enExample) 2013-12-26
JP5715835B2 JP5715835B2 (ja) 2015-05-13

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JP2011013180A Active JP5715835B2 (ja) 2011-01-25 2011-01-25 半導体パッケージ及びその製造方法

Country Status (2)

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US (1) US9142524B2 (enExample)
JP (1) JP5715835B2 (enExample)

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JP5903337B2 (ja) * 2012-06-08 2016-04-13 新光電気工業株式会社 半導体パッケージ及びその製造方法
CN103730436B (zh) * 2012-10-15 2016-11-16 景硕科技股份有限公司 线路载板的增层结构
JP2014086598A (ja) * 2012-10-24 2014-05-12 Hitachi Chemical Co Ltd 半導体装置の製造方法、半導体装置、及び感光性樹脂組成物
JP6161380B2 (ja) * 2013-04-17 2017-07-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102250997B1 (ko) 2014-05-02 2021-05-12 삼성전자주식회사 반도체 패키지
US9728498B2 (en) * 2015-06-30 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure
US9711458B2 (en) * 2015-11-13 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and formation method for chip package
EP3440246B1 (en) 2016-04-07 2024-11-27 Adetexs Ltd Improvements relating to textiles incorporating electronic devices
US10600748B2 (en) 2016-06-20 2020-03-24 Samsung Electronics Co., Ltd. Fan-out semiconductor package
TWI584425B (zh) * 2016-06-27 2017-05-21 力成科技股份有限公司 扇出型晶圓級封裝結構
JP2018018936A (ja) * 2016-07-27 2018-02-01 イビデン株式会社 配線基板
CN109844938B (zh) * 2016-08-12 2023-07-18 Qorvo美国公司 具有增强性能的晶片级封装
JP6291094B2 (ja) * 2017-01-24 2018-03-14 信越化学工業株式会社 積層型半導体装置、及び封止後積層型半導体装置
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
WO2019195428A1 (en) 2018-04-04 2019-10-10 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
CN118213279A (zh) 2018-07-02 2024-06-18 Qorvo美国公司 Rf半导体装置及其制造方法
CN110783300B (zh) * 2018-07-26 2021-08-13 钰桥半导体股份有限公司 具有调节件及防裂结构的导线架衬底及其覆晶组体
JP7211757B2 (ja) * 2018-10-22 2023-01-24 新光電気工業株式会社 配線基板
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
WO2020153983A1 (en) 2019-01-23 2020-07-30 Qorvo Us, Inc. Rf semiconductor device and manufacturing method thereof
US11139179B2 (en) 2019-09-09 2021-10-05 Advanced Semiconductor Engineering, Inc. Embedded component package structure and manufacturing method thereof
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
CN116583949A (zh) 2020-12-11 2023-08-11 Qorvo美国公司 多级3d堆叠式封装和其形成方法
US12062571B2 (en) 2021-03-05 2024-08-13 Qorvo Us, Inc. Selective etching process for SiGe and doped epitaxial silicon
KR20220151431A (ko) 2021-05-06 2022-11-15 삼성전기주식회사 인쇄회로기판
CN114188290B (zh) * 2021-12-03 2024-11-22 江苏中科智芯集成科技有限公司 一种降低翘曲的扇出型封装结构

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JPWO2010024233A1 (ja) * 2008-08-27 2012-01-26 日本電気株式会社 機能素子を内蔵可能な配線基板及びその製造方法
JP5249173B2 (ja) * 2009-10-30 2013-07-31 新光電気工業株式会社 半導体素子実装配線基板及びその製造方法
JP2011187473A (ja) * 2010-03-04 2011-09-22 Nec Corp 半導体素子内蔵配線基板
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