JP5690125B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5690125B2
JP5690125B2 JP2010274398A JP2010274398A JP5690125B2 JP 5690125 B2 JP5690125 B2 JP 5690125B2 JP 2010274398 A JP2010274398 A JP 2010274398A JP 2010274398 A JP2010274398 A JP 2010274398A JP 5690125 B2 JP5690125 B2 JP 5690125B2
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layer
electrode
transistor
light
oxide semiconductor
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Japanese (ja)
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JP2011142316A5 (ja
JP2011142316A (ja
Inventor
山崎　舜平
舜平 山崎
秋元　健吾
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2011142316A5 publication Critical patent/JP2011142316A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010274398A 2009-12-11 2010-12-09 半導体装置 Active JP5690125B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010274398A JP5690125B2 (ja) 2009-12-11 2010-12-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009282093 2009-12-11
JP2009282093 2009-12-11
JP2010274398A JP5690125B2 (ja) 2009-12-11 2010-12-09 半導体装置

Related Child Applications (1)

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JP2015001464A Division JP2015130510A (ja) 2009-12-11 2015-01-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2011142316A JP2011142316A (ja) 2011-07-21
JP2011142316A5 JP2011142316A5 (ja) 2014-01-30
JP5690125B2 true JP5690125B2 (ja) 2015-03-25

Family

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Family Applications (8)

Application Number Title Priority Date Filing Date
JP2010274398A Active JP5690125B2 (ja) 2009-12-11 2010-12-09 半導体装置
JP2015001464A Withdrawn JP2015130510A (ja) 2009-12-11 2015-01-07 半導体装置
JP2017111641A Active JP6400150B2 (ja) 2009-12-11 2017-06-06 半導体装置
JP2018165066A Withdrawn JP2019009458A (ja) 2009-12-11 2018-09-04 半導体装置
JP2020100115A Active JP7059320B2 (ja) 2009-12-11 2020-06-09 半導体装置
JP2022066304A Active JP7390427B2 (ja) 2009-12-11 2022-04-13 半導体装置
JP2023196860A Active JP7707263B2 (ja) 2009-12-11 2023-11-20 半導体装置
JP2025112163A Pending JP2025143390A (ja) 2009-12-11 2025-07-02 半導体装置

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JP2015001464A Withdrawn JP2015130510A (ja) 2009-12-11 2015-01-07 半導体装置
JP2017111641A Active JP6400150B2 (ja) 2009-12-11 2017-06-06 半導体装置
JP2018165066A Withdrawn JP2019009458A (ja) 2009-12-11 2018-09-04 半導体装置
JP2020100115A Active JP7059320B2 (ja) 2009-12-11 2020-06-09 半導体装置
JP2022066304A Active JP7390427B2 (ja) 2009-12-11 2022-04-13 半導体装置
JP2023196860A Active JP7707263B2 (ja) 2009-12-11 2023-11-20 半導体装置
JP2025112163A Pending JP2025143390A (ja) 2009-12-11 2025-07-02 半導体装置

Country Status (5)

Country Link
US (3) US8563976B2 (enExample)
JP (8) JP5690125B2 (enExample)
KR (1) KR101804589B1 (enExample)
TW (1) TWI585975B (enExample)
WO (1) WO2011070901A1 (enExample)

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US8988152B2 (en) * 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101960796B1 (ko) * 2012-03-08 2019-07-16 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 기판의 제조 방법 및 표시 기판
KR102254731B1 (ko) * 2012-04-13 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20130126240A (ko) 2012-05-11 2013-11-20 삼성디스플레이 주식회사 박막 트랜지스터 표시판
JP6021586B2 (ja) * 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 半導体装置
KR101976133B1 (ko) * 2012-11-20 2019-05-08 삼성디스플레이 주식회사 표시 장치
KR102798241B1 (ko) * 2012-12-25 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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TWI809225B (zh) * 2013-05-16 2023-07-21 日商半導體能源研究所股份有限公司 半導體裝置
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TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
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