JP5616808B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5616808B2
JP5616808B2 JP2011016914A JP2011016914A JP5616808B2 JP 5616808 B2 JP5616808 B2 JP 5616808B2 JP 2011016914 A JP2011016914 A JP 2011016914A JP 2011016914 A JP2011016914 A JP 2011016914A JP 5616808 B2 JP5616808 B2 JP 5616808B2
Authority
JP
Japan
Prior art keywords
transistor
layer
electrode layer
terminal
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011016914A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011181905A5 (OSRAM
JP2011181905A (ja
Inventor
齋藤　利彦
利彦 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011016914A priority Critical patent/JP5616808B2/ja
Publication of JP2011181905A publication Critical patent/JP2011181905A/ja
Publication of JP2011181905A5 publication Critical patent/JP2011181905A5/ja
Application granted granted Critical
Publication of JP5616808B2 publication Critical patent/JP5616808B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011016914A 2010-02-05 2011-01-28 半導体装置 Active JP5616808B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011016914A JP5616808B2 (ja) 2010-02-05 2011-01-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010024867 2010-02-05
JP2010024867 2010-02-05
JP2011016914A JP5616808B2 (ja) 2010-02-05 2011-01-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014186068A Division JP5913495B2 (ja) 2010-02-05 2014-09-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2011181905A JP2011181905A (ja) 2011-09-15
JP2011181905A5 JP2011181905A5 (OSRAM) 2014-02-27
JP5616808B2 true JP5616808B2 (ja) 2014-10-29

Family

ID=44353602

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2011016914A Active JP5616808B2 (ja) 2010-02-05 2011-01-28 半導体装置
JP2014186068A Active JP5913495B2 (ja) 2010-02-05 2014-09-12 半導体装置
JP2016063175A Active JP6114427B2 (ja) 2010-02-05 2016-03-28 半導体装置
JP2017050857A Expired - Fee Related JP6377792B2 (ja) 2010-02-05 2017-03-16 記憶装置
JP2018139235A Expired - Fee Related JP6708707B2 (ja) 2010-02-05 2018-07-25 半導体装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2014186068A Active JP5913495B2 (ja) 2010-02-05 2014-09-12 半導体装置
JP2016063175A Active JP6114427B2 (ja) 2010-02-05 2016-03-28 半導体装置
JP2017050857A Expired - Fee Related JP6377792B2 (ja) 2010-02-05 2017-03-16 記憶装置
JP2018139235A Expired - Fee Related JP6708707B2 (ja) 2010-02-05 2018-07-25 半導体装置

Country Status (6)

Country Link
US (2) US8385105B2 (OSRAM)
JP (5) JP5616808B2 (OSRAM)
KR (2) KR101926336B1 (OSRAM)
CN (2) CN102742001B (OSRAM)
TW (1) TWI525637B (OSRAM)
WO (1) WO2011096262A1 (OSRAM)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102275522B1 (ko) 2009-12-18 2021-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US8922236B2 (en) 2010-09-10 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI536502B (zh) * 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
JP6091083B2 (ja) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 記憶装置
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
KR20130092843A (ko) * 2012-02-13 2013-08-21 삼성전자주식회사 빛의 인텐시티를 컨트롤할 수 있는 컨트롤 모듈 미러를 갖는 반사형 포토리소그래피 설비
US8923048B2 (en) 2012-04-13 2014-12-30 Sandisk Technologies Inc. 3D non-volatile storage with transistor decoding structure
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
KR102107591B1 (ko) * 2012-07-18 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자 및 프로그래머블 로직 디바이스
KR20140056986A (ko) 2012-11-02 2014-05-12 삼성전자주식회사 모션 센서 어레이 장치, 상기 모선 센서 어레이를 이용한 거리 센싱 시스템, 및 거리 센싱 방법
JP6223198B2 (ja) * 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
US9318484B2 (en) * 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9612795B2 (en) 2013-03-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Data processing device, data processing method, and computer program
US9299855B2 (en) * 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9240420B2 (en) * 2013-09-06 2016-01-19 Sandisk Technologies Inc. 3D non-volatile storage with wide band gap transistor decoder
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
US10008502B2 (en) 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP2018026421A (ja) 2016-08-09 2018-02-15 株式会社東芝 磁気記憶装置
US10658395B2 (en) 2017-03-24 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP3766102B1 (en) * 2018-03-14 2022-08-31 Emberion Oy Surface mesfet

Family Cites Families (197)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
US3893146A (en) * 1973-12-26 1975-07-01 Teletype Corp Semiconductor capacitor structure and memory cell, and method of making
US3955181A (en) * 1974-11-19 1976-05-04 Texas Instruments Incorporated Self-refreshing random access memory cell
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
US4256974A (en) * 1978-09-29 1981-03-17 Rockwell International Corporation Metal oxide semiconductor (MOS) input circuit with hysteresis
JPS5931155B2 (ja) * 1979-10-11 1984-07-31 インターナシヨナルビジネス マシーンズ コーポレーシヨン 感知増幅回路
EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6034199B2 (ja) 1980-12-20 1985-08-07 株式会社東芝 半導体記憶装置
US4401897A (en) * 1981-03-17 1983-08-30 Motorola, Inc. Substrate bias voltage regulator
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPS62274773A (ja) 1986-05-23 1987-11-28 Hitachi Ltd 半導体記憶装置
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63268184A (ja) 1987-04-24 1988-11-04 Sony Corp 半導体メモリ装置
JPH025290A (ja) * 1988-06-22 1990-01-10 Nec Corp 半導体メモリ
EP0469215B1 (en) * 1990-07-31 1995-11-22 International Business Machines Corporation Method of forming stacked tungsten gate PFET devices and structures resulting therefrom
KR940002859B1 (ko) * 1991-03-14 1994-04-04 삼성전자 주식회사 반도체 메모리장치에서의 워드라인 구동회로
JP2775040B2 (ja) 1991-10-29 1998-07-09 株式会社 半導体エネルギー研究所 電気光学表示装置およびその駆動方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP2894964B2 (ja) 1995-01-18 1999-05-24 日本電気株式会社 半導体集積回路
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JPH11505377A (ja) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JPH10228773A (ja) * 1997-02-14 1998-08-25 Hitachi Ltd ダイナミック型ｒａｍ
US6674112B1 (en) 1997-06-27 2004-01-06 Hitachi, Ltd. Semiconductor integrated circuit device
JPH11176153A (ja) 1997-12-11 1999-07-02 Seiko Epson Corp 半導体集積回路
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000113683A (ja) * 1998-10-02 2000-04-21 Hitachi Ltd 半導体装置
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3936830B2 (ja) * 1999-05-13 2007-06-27 株式会社日立製作所 半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3437132B2 (ja) * 1999-09-14 2003-08-18 シャープ株式会社 半導体装置
US6545935B1 (en) * 2000-08-29 2003-04-08 Ibm Corporation Dual-port DRAM architecture system
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004213722A (ja) * 2002-12-27 2004-07-29 Matsushita Electric Ind Co Ltd 半導体記憶装置及び半導体集積回路装置
JP2004265944A (ja) 2003-02-21 2004-09-24 Handotai Rikougaku Kenkyu Center:Kk 半導体記憶装置
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7221580B1 (en) * 2003-08-27 2007-05-22 Analog Devices, Inc. Memory gain cell
KR100615085B1 (ko) * 2004-01-12 2006-08-22 삼성전자주식회사 노드 콘택 구조체들, 이를 채택하는 반도체소자들, 이를채택하는 에스램 셀들 및 이를 제조하는 방법들
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
CN102176237B (zh) 2004-04-09 2015-09-30 株式会社半导体能源研究所 限幅器以及采用限幅器的半导体器件
WO2005105849A1 (en) 2004-04-30 2005-11-10 Innate Pharma Compositions and methods for treating proliferative disorders such as nk-type ldgl
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
KR100534216B1 (ko) * 2004-06-18 2005-12-08 삼성전자주식회사 반도체 메모리에서의 워드라인 드라이버 회로 및 그에따른 구동방법
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
JP2005094025A (ja) * 2004-10-15 2005-04-07 Renesas Technology Corp 半導体装置及びトランジスタ
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
KR100998527B1 (ko) 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 비정질 산화물 및 전계 효과 트랜지스터
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
WO2006051995A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
EP1810335B1 (en) 2004-11-10 2020-05-27 Canon Kabushiki Kaisha Light-emitting device
JP4114659B2 (ja) 2004-11-26 2008-07-09 セイコーエプソン株式会社 強誘電体メモリ及びその駆動方法
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI562380B (en) 2005-01-28 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP4295253B2 (ja) * 2005-07-06 2009-07-15 富士通マイクロエレクトロニクス株式会社 強誘電体記憶装置
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP2007122758A (ja) * 2005-10-24 2007-05-17 Sony Corp 半導体メモリ装置およびその読み出し方法
KR101103374B1 (ko) 2005-11-15 2012-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101027178B1 (ko) * 2005-12-28 2011-04-05 인터내셔널 비지네스 머신즈 코포레이션 전류 소비 감소를 위한 메모리 시스템 및 관련 방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP4252078B2 (ja) * 2006-09-28 2009-04-08 三洋電機株式会社 光検出装置
KR101240655B1 (ko) * 2006-09-29 2013-03-08 삼성디스플레이 주식회사 표시 장치의 구동 장치
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
JP5099739B2 (ja) * 2006-10-12 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR20080061274A (ko) * 2006-12-27 2008-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안테나 및 그 안테나를 가지는 반도체 장치
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8558278B2 (en) * 2007-01-16 2013-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Strained transistor with optimized drive current and method of forming
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
US7612605B2 (en) * 2007-02-12 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Bootstrap voltage generating circuits
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
JP2008270313A (ja) * 2007-04-17 2008-11-06 Matsushita Electric Ind Co Ltd 半導体記憶素子
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US7666730B2 (en) * 2007-06-29 2010-02-23 Freescale Semiconductor, Inc. Method for forming a dual metal gate structure
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP2009076879A (ja) * 2007-08-24 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置
US7602168B2 (en) * 2007-08-31 2009-10-13 Freescale Semiconductor, Inc. Voltage regulator for integrated circuits
JPWO2009034953A1 (ja) 2007-09-10 2010-12-24 出光興産株式会社 薄膜トランジスタ
JP5430846B2 (ja) 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5121478B2 (ja) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
JP2009206508A (ja) 2008-01-31 2009-09-10 Canon Inc 薄膜トランジスタ及び表示装置
JP5125569B2 (ja) 2008-02-08 2013-01-23 ソニー株式会社 ブートストラップ回路
JP2010021182A (ja) * 2008-07-08 2010-01-28 Konica Minolta Holdings Inc 薄膜の変換方法及びそれを用いた薄膜トランジスタとその製造方法
JP2010021170A (ja) 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法
JP5096250B2 (ja) * 2008-07-18 2012-12-12 出光興産株式会社 酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ−ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR101670695B1 (ko) * 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8384439B2 (en) * 2008-11-28 2013-02-26 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
TW201044660A (en) * 2008-12-05 2010-12-16 Du Pont Backplane structures for solution processed electronic devices
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5518409B2 (ja) * 2009-09-15 2014-06-11 ピーエスフォー ルクスコ エスエイアールエル 半導体装置、半導体記憶装置、及び半導体装置を含む情報処理システム
JP5451281B2 (ja) * 2009-09-16 2014-03-26 ピーエスフォー ルクスコ エスエイアールエル センスアンプ回路及びそれを備えた半導体装置
US8410783B2 (en) * 2009-09-30 2013-04-02 Apple Inc. Detecting an end of life for a battery using a difference between an unloaded battery voltage and a loaded battery voltage
SG10201910510UA (en) 2009-10-29 2020-01-30 Semiconductor Energy Lab Semiconductor device
CN102612749B (zh) 2009-11-06 2015-04-01 株式会社半导体能源研究所 半导体器件
KR101448908B1 (ko) * 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
MY166309A (en) 2009-11-20 2018-06-25 Semiconductor Energy Lab Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065183A1 (en) 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR101911382B1 (ko) 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8362557B2 (en) * 2009-12-02 2013-01-29 Fairchild Semiconductor Corporation Stepped-source LDMOS architecture
CN102714180B (zh) 2009-12-11 2015-03-25 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
CN102668377B (zh) 2009-12-18 2015-04-08 株式会社半导体能源研究所 非易失性锁存电路和逻辑电路以及使用它们的半导体器件
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789204B (zh) 2009-12-25 2021-11-02 株式会社半导体能源研究所 半导体装置
CN103985760B (zh) 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
CN102714184B (zh) 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
KR102198144B1 (ko) 2009-12-28 2021-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
KR101842413B1 (ko) 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086871A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011086847A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011086846A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
CN102725841B (zh) 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
KR101787734B1 (ko) 2010-01-20 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
IN2012DN05920A (OSRAM) 2010-01-20 2015-09-18 Semiconductor Energy Lab
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR101722420B1 (ko) 2010-01-20 2017-04-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 휴대 전자 기기
WO2011089852A1 (en) 2010-01-22 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
KR101893904B1 (ko) 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011096270A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013009285A (ja) * 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd 信号処理回路及びその駆動方法
KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
US9208849B2 (en) * 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP2014199709A (ja) * 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 記憶装置、半導体装置

Also Published As

Publication number Publication date
JP2017118144A (ja) 2017-06-29
JP2015028837A (ja) 2015-02-12
CN106847816A (zh) 2017-06-13
KR20120123524A (ko) 2012-11-08
TW201205593A (en) 2012-02-01
WO2011096262A1 (en) 2011-08-11
US20110194332A1 (en) 2011-08-11
JP2016154059A (ja) 2016-08-25
KR101926336B1 (ko) 2019-03-07
US9659653B2 (en) 2017-05-23
JP6708707B2 (ja) 2020-06-10
TWI525637B (zh) 2016-03-11
KR102094131B1 (ko) 2020-03-30
CN102742001B (zh) 2017-03-22
JP2018174353A (ja) 2018-11-08
US20130161714A1 (en) 2013-06-27
KR20180132161A (ko) 2018-12-11
JP6377792B2 (ja) 2018-08-22
JP2011181905A (ja) 2011-09-15
JP5913495B2 (ja) 2016-04-27
JP6114427B2 (ja) 2017-04-12
US8385105B2 (en) 2013-02-26
CN102742001A (zh) 2012-10-17

Similar Documents

Publication Publication Date Title
JP5616808B2 (ja) 半導体装置
JP5727892B2 (ja) 半導体装置
TWI569373B (zh) 半導體儲存裝置
JP5102870B2 (ja) 半導体装置
JP5923248B2 (ja) 半導体装置
JP5745254B2 (ja) 半導体装置
JP2011129891A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140717

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140722

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140728

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140819

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140912

R150 Certificate of patent or registration of utility model

Ref document number: 5616808

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250