JP5512292B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5512292B2
JP5512292B2 JP2010002957A JP2010002957A JP5512292B2 JP 5512292 B2 JP5512292 B2 JP 5512292B2 JP 2010002957 A JP2010002957 A JP 2010002957A JP 2010002957 A JP2010002957 A JP 2010002957A JP 5512292 B2 JP5512292 B2 JP 5512292B2
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JP
Japan
Prior art keywords
chip
semiconductor chip
semiconductor
bonding pads
bonding
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Active
Application number
JP2010002957A
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English (en)
Japanese (ja)
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JP2011142264A (ja
JP2011142264A5 (https=
Inventor
修康 武藤
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Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2010002957A priority Critical patent/JP5512292B2/ja
Priority to TW099143837A priority patent/TWI493610B/zh
Priority to CN201410547244.1A priority patent/CN104362101B/zh
Priority to CN201110002450.0A priority patent/CN102142398B/zh
Priority to US12/987,090 priority patent/US8283210B2/en
Publication of JP2011142264A publication Critical patent/JP2011142264A/ja
Priority to US13/611,222 priority patent/US8796074B2/en
Publication of JP2011142264A5 publication Critical patent/JP2011142264A5/ja
Priority to US14/150,972 priority patent/US9177936B2/en
Application granted granted Critical
Publication of JP5512292B2 publication Critical patent/JP5512292B2/ja
Priority to HK15103686.6A priority patent/HK1203244B/xx
Priority to US14/929,326 priority patent/US9397072B2/en
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Anticipated expiration legal-status Critical

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402Wafer tapes, e.g. grinding or dicing support tapes
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    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
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    • H10W72/019Manufacture or treatment of bond pads
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    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
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    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
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    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H10W72/01331Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01336Manufacture or treatment of die-attach connectors using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
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    • H10W72/07502Connecting or disconnecting of bond wires using an auxiliary member
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    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
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    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2010002957A 2010-01-08 2010-01-08 半導体装置の製造方法 Active JP5512292B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2010002957A JP5512292B2 (ja) 2010-01-08 2010-01-08 半導体装置の製造方法
TW099143837A TWI493610B (zh) 2010-01-08 2010-12-14 Manufacturing method of semiconductor device
CN201410547244.1A CN104362101B (zh) 2010-01-08 2011-01-07 制造半导体器件的方法
CN201110002450.0A CN102142398B (zh) 2010-01-08 2011-01-07 制造半导体器件的方法
US12/987,090 US8283210B2 (en) 2010-01-08 2011-01-08 Method of manufacturing semiconductor device
US13/611,222 US8796074B2 (en) 2010-01-08 2012-09-12 Method of manufacturing semiconductor device
US14/150,972 US9177936B2 (en) 2010-01-08 2014-01-09 Method of manufacturing semiconductor device
HK15103686.6A HK1203244B (en) 2010-01-08 2015-04-15 Method of manufacturing semiconductor device
US14/929,326 US9397072B2 (en) 2010-01-08 2015-10-31 Method of manufacturing semiconductor device

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Application Number Priority Date Filing Date Title
JP2010002957A JP5512292B2 (ja) 2010-01-08 2010-01-08 半導体装置の製造方法

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JP2011142264A JP2011142264A (ja) 2011-07-21
JP2011142264A5 JP2011142264A5 (https=) 2012-10-04
JP5512292B2 true JP5512292B2 (ja) 2014-06-04

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US (4) US8283210B2 (https=)
JP (1) JP5512292B2 (https=)
CN (2) CN102142398B (https=)
TW (1) TWI493610B (https=)

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