JP5504235B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5504235B2 JP5504235B2 JP2011215726A JP2011215726A JP5504235B2 JP 5504235 B2 JP5504235 B2 JP 5504235B2 JP 2011215726 A JP2011215726 A JP 2011215726A JP 2011215726 A JP2011215726 A JP 2011215726A JP 5504235 B2 JP5504235 B2 JP 5504235B2
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- 239000004065 semiconductor Substances 0.000 title claims description 153
- 239000012535 impurity Substances 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 9
- 238000013459 approach Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 157
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 32
- 238000000034 method Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 10
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- 230000009467 reduction Effects 0.000 description 7
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- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 230000005684 electric field Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Description
基板の一方の表面側から深さ方向に延在し、かつ互いに間隔をおいて前記半導体基板内に
設けられた複数の第2導電型の第2半導体層と、前記半導体基板の一方の表面側において
一部の前記第2半導体層と接するように設けられた複数の第2導電型の第3半導体層と、
前記第3半導体層の表面に選択的に形成された第1導電型の第4半導体層と、前記第1半
導体層、前記第3半導体層及び前記第4半導体層の表面側に絶縁膜を介して設けられた制
御電極と、前記第3半導体層と前記第4半導体層に接続された第1主電極と、前記第1半
導体層の他方の表面に設けられた第1導電型の第6半導体層と、前記第6半導体層に電気
的に接続された第2主電極を有するMOSと、前記第1主電極の一部に設けられた、前記
制御電極の外部への引き出し電極と、前記半導体基板の一方の表面側において一部の前記
第2半導体層と接するように設けられた第2導電型の第5半導体層と、前記第1半導体層
と、前記第2半導体層と、前記第6半導体層を含んで構成され、前記第5半導体層に接続
するクランプ電極に接続され、且つ前記引き出し電極下に設けられた第1ダイオードと、
前記制御電極に接続された第7半導体層を含んで構成され、前記第1ダイオードと逆直列
になるように前記クランプ電極に接続され、且つ前記引き出し電極下に設けられた第2ダ
イオードとを有する。
図1は第1の実施形態を示す半導体装置1の要部断面図を示しており、図2はその半導体装置1の等価回路図を示している。
図4は、第2の実施形態を示す半導体装置1の要部断面図を示している。この第2の実施形態の各部について、図1に示す第1の実施形態の半導体装置1の各部と同一部分は同一符号で示す。
図5は第3の実施形態を示す半導体装置1の要部平面図、図6は図5のX‐A‐X’線における断面を示す要部断面図、図7は第3の実施形態の変形例を示す半導体装置1の要部断面図をそれぞれ示している。この第3の実施形態及び第3の実施形態の変形例の各部について、図1に示す第1の実施形態の半導体装置1の各部と同一部分は同一符号で示す。
図8の(a)は第4の実施形態を示す半導体装置1の要部断面図であり、(b)は(a)に示す部分の縦方向(深さ方向)の不純物濃度プロファイルを示すグラフを示している。図8(b)において長鎖線はn−型ドリフト層20の濃度プロファイルを示すグラフ、実線はp型ベース層22下におけるp型ピラー層21の濃度プロファイルを示すグラフ、破線はp型クランプ層30下におけるp型ピラー層21の濃度プロファイルを示すグラフをそれぞれ示している。
図11は第5の実施形態を示す半導体装置1の要部断面図、図12は第5の実施形態の変形例を示す半導体装置1の要部断面図をそれぞれ示している。この第5の実施形態及び第5の実施形態の変形例の各部について、図1に示す第1の実施形態の半導体装置1の各部と同一部分は同一符号で示す。
Claims (9)
- 第1導電型の第1半導体層を含む半導体基板と、前記半導体基板の一方の表面側から深
さ方向に延在し、かつ互いに間隔をおいて前記半導体基板内に設けられた複数の第2導電
型の第2半導体層と、前記半導体基板の一方の表面側において一部の前記第2半導体層と
接するように設けられた複数の第2導電型の第3半導体層と、前記第3半導体層の表面に
選択的に形成された第1導電型の第4半導体層と、前記第1半導体層、前記第3半導体層
及び前記第4半導体層の表面側に絶縁膜を介して設けられた制御電極と、前記第3半導体
層と前記第4半導体層に接続された第1主電極と、前記第1半導体層の他方の表面に設け
られた第1導電型の第6半導体層と、前記第6半導体層に電気的に接続された第2主電極
を有するMOSと、
前記第1主電極の一部に設けられた、前記制御電極の外部への引き出し電極と、
前記半導体基板の一方の表面側において一部の前記第2半導体層と接するように設けら
れた第2導電型の第5半導体層と、前記第1半導体層と、前記第2半導体層と、前記第6
半導体層を含んで構成され、前記第5半導体層に接続するクランプ電極に接続され、且つ
前記引き出し電極下に設けられた第1ダイオードと、
前記制御電極に接続された第7半導体層を含んで構成され、前記第1ダイオードと逆直
列になるように前記クランプ電極に接続され、且つ前記引き出し電極下に設けられた第2
ダイオードと、
を有する半導体装置。 - 前記第1ダイオードの耐圧は、前記MOSの耐圧よりも低い請求項1に記載の半導体装
置。 - 前記第5半導体層同士の間隔は、前記第3半導体層同士の間隔よりも広い請求項1また
は2に記載の半導体装置。 - 前記第2半導体層同士の間隔は、前記MOS側よりも前記第1ダイオード側で広い請求
項1乃至3のいずれか一に記載の半導体装置。 - 前記第2半導体層の不純物濃度は、前記第2主電極側から前記第1主電極側へ近づくに
つれて高くなっている請求項1乃至4のいずれか一に記載の半導体装置。 - 前記第2主電極側から前記第1主電極側へ近づく際の前記第2半導体層の不純物濃度の
変化は、前記MOS側よりも前記第1ダイオード側で大きい請求項1乃至5のいずれか一
に記載の半導体装置。 - 前記第1ダイオード側では前記第1半導体層よりも前記第2半導体層の不純物濃度が高
く、前記MOS側では前記第1半導体層よりも前記第2半導体層の不純物濃度が低い請求
項1乃至6のいずれか一に記載の半導体装置。 - 前記第1半導体層と前記第2半導体層の不純物濃度は、前記MOS側よりも前記第1ダ
イオード側で高い請求項1乃至7のいずれか一に記載の半導体装置。 - 前記第1主電極と前記第2主電極間に電圧を印加した際に、前記MOSよりも前記第1
ダイオードで先にアバランシェ降伏が生じ、ゲート抵抗で生じる電圧降下により前記制御
電極に印加される電圧が閾値電圧以上となった際に、前記第2主電極から前記第1主電極
に電流が流れて動作する請求項1乃至8のいずれか一に記載の半導体装置。
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CN201210313561.8A CN103035641B (zh) | 2011-09-29 | 2012-08-29 | 半导体装置 |
US13/612,200 US20130082261A1 (en) | 2011-09-29 | 2012-09-12 | Semiconductor device |
US14/246,437 US9349721B2 (en) | 2011-09-29 | 2014-04-07 | Semiconductor device |
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JP2012074441A (ja) * | 2010-09-28 | 2012-04-12 | Toshiba Corp | 電力用半導体装置 |
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US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
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CN105355666B (zh) * | 2015-12-01 | 2018-06-26 | 成都九十度工业产品设计有限公司 | 一种高压肖特基二极管 |
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JP6862381B2 (ja) * | 2018-03-02 | 2021-04-21 | 株式会社東芝 | 半導体装置 |
US11579645B2 (en) * | 2019-06-21 | 2023-02-14 | Wolfspeed, Inc. | Device design for short-circuitry protection circuitry within transistors |
CN114744042A (zh) * | 2022-03-24 | 2022-07-12 | 苏州迈志微半导体有限公司 | 功率晶体管 |
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2012
- 2012-08-29 CN CN201210313561.8A patent/CN103035641B/zh not_active Expired - Fee Related
- 2012-09-12 US US13/612,200 patent/US20130082261A1/en not_active Abandoned
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US9349721B2 (en) | 2016-05-24 |
US20140284704A1 (en) | 2014-09-25 |
JP2013077656A (ja) | 2013-04-25 |
CN103035641B (zh) | 2015-11-11 |
CN103035641A (zh) | 2013-04-10 |
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