JP5459904B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5459904B2
JP5459904B2 JP2009207130A JP2009207130A JP5459904B2 JP 5459904 B2 JP5459904 B2 JP 5459904B2 JP 2009207130 A JP2009207130 A JP 2009207130A JP 2009207130 A JP2009207130 A JP 2009207130A JP 5459904 B2 JP5459904 B2 JP 5459904B2
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Japan
Prior art keywords
layer
thin film
film transistor
light
wiring
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Japanese (ja)
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JP2010093240A (ja
JP2010093240A5 (enExample
Inventor
舜平 山崎
健吾 秋元
茂樹 小森
秀貴 魚地
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009207130A priority Critical patent/JP5459904B2/ja
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Publication of JP2010093240A5 publication Critical patent/JP2010093240A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2009207130A 2008-09-12 2009-09-08 半導体装置 Active JP5459904B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009207130A JP5459904B2 (ja) 2008-09-12 2009-09-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008235111 2008-09-12
JP2008235111 2008-09-12
JP2009207130A JP5459904B2 (ja) 2008-09-12 2009-09-08 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2013243041A Division JP5478770B1 (ja) 2008-09-12 2013-11-25 半導体装置
JP2014003824A Division JP5723463B2 (ja) 2008-09-12 2014-01-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2010093240A JP2010093240A (ja) 2010-04-22
JP2010093240A5 JP2010093240A5 (enExample) 2012-10-25
JP5459904B2 true JP5459904B2 (ja) 2014-04-02

Family

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Family Applications (8)

Application Number Title Priority Date Filing Date
JP2009207130A Active JP5459904B2 (ja) 2008-09-12 2009-09-08 半導体装置
JP2013243041A Active JP5478770B1 (ja) 2008-09-12 2013-11-25 半導体装置
JP2014003824A Active JP5723463B2 (ja) 2008-09-12 2014-01-13 半導体装置
JP2015065898A Expired - Fee Related JP6051251B2 (ja) 2008-09-12 2015-03-27 半導体装置
JP2016229815A Active JP6351694B2 (ja) 2008-09-12 2016-11-28 半導体装置
JP2018107566A Withdrawn JP2018142736A (ja) 2008-09-12 2018-06-05 半導体装置
JP2020025969A Withdrawn JP2020095278A (ja) 2008-09-12 2020-02-19 半導体装置
JP2021163638A Active JP7323586B2 (ja) 2008-09-12 2021-10-04 半導体装置

Family Applications After (7)

Application Number Title Priority Date Filing Date
JP2013243041A Active JP5478770B1 (ja) 2008-09-12 2013-11-25 半導体装置
JP2014003824A Active JP5723463B2 (ja) 2008-09-12 2014-01-13 半導体装置
JP2015065898A Expired - Fee Related JP6051251B2 (ja) 2008-09-12 2015-03-27 半導体装置
JP2016229815A Active JP6351694B2 (ja) 2008-09-12 2016-11-28 半導体装置
JP2018107566A Withdrawn JP2018142736A (ja) 2008-09-12 2018-06-05 半導体装置
JP2020025969A Withdrawn JP2020095278A (ja) 2008-09-12 2020-02-19 半導体装置
JP2021163638A Active JP7323586B2 (ja) 2008-09-12 2021-10-04 半導体装置

Country Status (5)

Country Link
US (1) US8501555B2 (enExample)
JP (8) JP5459904B2 (enExample)
KR (3) KR101545460B1 (enExample)
TW (1) TWI550859B (enExample)
WO (1) WO2010029885A1 (enExample)

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KR101507324B1 (ko) * 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
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