CN106226965B - 一种基于igzo-tft的boa液晶面板的结构及制作方法 - Google Patents

一种基于igzo-tft的boa液晶面板的结构及制作方法 Download PDF

Info

Publication number
CN106226965B
CN106226965B CN201610796745.2A CN201610796745A CN106226965B CN 106226965 B CN106226965 B CN 106226965B CN 201610796745 A CN201610796745 A CN 201610796745A CN 106226965 B CN106226965 B CN 106226965B
Authority
CN
China
Prior art keywords
igzo
film
tft
source
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610796745.2A
Other languages
English (en)
Other versions
CN106226965A (zh
Inventor
石龙强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201610796745.2A priority Critical patent/CN106226965B/zh
Publication of CN106226965A publication Critical patent/CN106226965A/zh
Priority to US15/328,920 priority patent/US10191339B2/en
Priority to PCT/CN2017/070280 priority patent/WO2018040464A1/zh
Application granted granted Critical
Publication of CN106226965B publication Critical patent/CN106226965B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
    • H01L21/47635—After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/437—Superconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种基于IGZO‑TFT的BOA液晶面板的结构及制作方法，其中方法具有如下步骤：(1)制作黑色矩阵；(2)制作栅；(3)制作GI；(4)制作源漏极；(5)制作IGZO；(6)制作PV；(7)制作R/G/B；(8)制作ITO。本发明提出了用氧化铜做黑色矩阵的共平面结构的IGZO‑TFT的BOA器件，有效地避免IGZO被刻蚀的风险。

Description

一种基于IGZO-TFT的BOA液晶面板的结构及制作方法
技术领域
本发明涉及液晶领域，特别涉及一种基于IGZO-TFT的BOA液晶面板的结构及制作方法。
背景技术
首先，解释两个名词，IGZO(indium gallium zinc oxide，铟镓锌氧化物)为一种金属氧化物，而TFT(Thin Film Transistor)为薄膜晶体管。BOA(Black Martix On Array，黑色矩阵做在阵列基板上)是目前一种流行的LCD做法。该工艺省去了CF(color filter，彩色滤光片)基板，这样做不仅减去了CF工艺，降低成本，而且提高了制程的对位精度，有利于高开口率和高分辨率显示器的制作。
传统BOA的BM(Black Martix黑色矩阵)为有机光阻，是做完R、G、B后再做图案化处理。由于黑色矩阵对光学密度(OD)要求高，而现有的针对BOA结构的黑色矩阵(BM)的对光学密度值低，所以黑色矩阵(BM)涂布很厚，然而这样会导致遮挡阵列基板上的对位标记(mark)，不利于制程中的曝光对位，而且，过高的黑色矩阵的tapper角度难控制，比较陡，容易造成像素(pixel)ITO(ITO是一种N型氧化物半导体-氧化铟锡，ITO薄膜即铟锡氧化物半导体透明导电膜)搭接上去会断线的问题。
金属氧化物的绝缘性比较好，然而许多金属氧化物，特别是容易工业化应用的材料，大多数透光性能好，如三氧化二铝(Al2O3)，不适合做黑色矩阵(BM)材料，然而，本发明的发明人发现氧化铜(CuO)是一种黑色的氧化物，而且极易用于工业化生产，可以用来做BM材料。
IGZO由于高迁移率，成膜均匀性好，易于大尺寸化制作，并且和砷(As)有相同的制程，是很好的TFT有源层材料。近年来得到广泛发展。IGZO由于和ITO的性质相似，容易被铝(Al)酸刻蚀，所以一般而言，不适合做BCE(BackChannel Etched，背沟道刻蚀型)结构的器件。因为BCE结构在刻蚀源漏极的同时，会将IGZO层刻蚀掉，导致TFT器件制作失败。
鉴于此，本发明的发明人设计出一种基于IGZO-TFT的BOA液晶面板的结构和制作方法，以克服上述缺陷。
发明内容
本发明的目的是提供一种基于IGZO-TFT的BOA液晶面板的结构及制作方法，其提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效地避免IGZO被刻蚀的风险。
为达上述目的，本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧化处理得到氧化铜，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
(2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
(3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
(4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
(5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
(6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
(7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
(8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(1)中，是通过物理气相沉积进行铜成膜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(2)中，是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
所述的基于IGZO-TFT的BOA液晶面板的制作方法，其中，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，其包括基板，所述基板上具有黑色矩阵图形，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
所述的基于IGZO-TFT的BOA液晶面板的结构，其中，所述黑色矩阵图形由氧化铜形成。
本发明的有益效果是：本发明针对现有BOA结构黑色矩阵(BM)难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用氧化铜做黑色矩阵的共平面结构的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是制作BM图形的示意图；
图2是制作Gate图形的示意图；
图3是制作GI薄膜的示意图；
图4是制作源漏极的示意图；
图5是制作IGZO图形的示意图；
图6是制作PV薄膜的示意图；
图7是制作R/G/B的示意图；
图8是制作ITO图形的示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
本发明提供一种基于IGZO-TFT的BOA液晶面板的制作方法，其具有如下步骤：
(1)制作黑色矩阵(BM)：
如图1所示，首先，在基板1上通过物理气相沉积(Physical Vapor Deposition，PVD)进行铜(Cu)成膜，然后进行氧等离子体(O2plasma)处理，得到氧化铜(CuO)，即利用氧化铜(CuO)做BM的遮挡层，进行图案化处理，并且裸露出开口区域3。然后进行曝光，湿法刻蚀得到BM图形2。需要强调的是，BM图形仅仅裸露出开口区域3。
(2)制作栅(Gate)：
如图2所示，在BM图形2上通过物理气相沉积(PVD)进行Gate成膜，然后曝光，干法刻蚀得到Gate图形4。优选地，Gate图形4的材料优选为铜(Cu)。
(3)制作GI：
如图3所示，在整体上通过化学气相沉积(Chemical Vapor Deposition，CVD)进行GI成膜。优选地，GI薄膜5的材料优选为二氧化硅(SiO2)。
(4)制作源漏极：
如图4所示，在由GI薄膜5覆盖的Gate图形4上通过物理气相沉积(PVD)进行源漏极成膜，然后曝光，湿法刻蚀得到源漏极图形。优选地，源漏极6的材料优选为铜(Cu)。
(5)制作金属氧化物：
如图5所示，在由GI薄膜5覆盖的Gate图形4上、源漏极之间通过物理气相沉积(PVD)进行金属氧化物(IGZO)成膜，然后曝光，湿法刻蚀得到金属氧化物(IGZO)图形7。
(6)制作PV：
如图6所示，在整体上通过化学气相沉积(CVD)进行PV成膜，穿过PV薄膜8在源漏极6上通过干刻蚀得到像素(Pixel)的接触孔9。优选地，PV材料优选为SiO2。
(7)制作R/G/B：
如图7所示，在整体上进行R/G/B 10涂布，留出所述接触孔9，并曝光得到所需图形。
(8)制作ITO：
如图8所示，覆盖接触孔9以及所述开口区域3、通过物理气相沉积(PVD)进行ITO成膜，然后曝光，湿法刻蚀得到ITO图形11。
此外，本发明还提供一种基于IGZO-TFT的BOA液晶面板的结构，如图8所示，其主要包括基板1，基板1上具有BM图形2，并且所述BM图形2将开口区域3裸露出来，所述BM图形2上具有Gate图形4，所述基板1、BM图形2以及Gate图形4上具有GI薄膜5，在由GI薄膜5覆盖的Gate图形4上具有源漏极6，在由GI薄膜5覆盖的Gate图形4上、源漏极6之间具有IGZO薄膜7，在整体上具有PV薄膜8，并且PV薄膜8在对应源漏极6处具有接触孔9，在整体上进行R/G/B10涂布，留出所述接触孔9，覆盖接触孔9以及所述开口区域3具有ITO图形11。
综上所述，本发明的有益效果是：
本发明针对现有BOA结构BM难制作和IGZO-TFT中BCE结构中IGZO被刻蚀的难点，提出了用CuO做BM的共平面结构(Coplanar Structrue)的IGZO-TFT的BOA器件，有效的解决了问题。此外，本发明采用底栅底接触的结构(coplanar)，制作即先做源漏极，再做IGZO，这样有效的避免IGZO被刻蚀的风险。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (9)

1.一种基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，具有如下步骤：
(1)制作黑色矩阵：在基板上进行铜成膜，然后经过氧等离子体处理得到氧化铜作为遮挡层，再进行图案化处理并裸露出开口区域，得到黑色矩阵图形；
(2)制作栅：在所述黑色矩阵图形进行栅成膜，然后曝光，得到栅图形；
(3)制作GI：在步骤(2)的成品上进行GI成膜，形成GI薄膜；
(4)制作源漏极：在由GI薄膜覆盖的栅图形上进行源漏极成膜，然后曝光，得到源漏极图形；
(5)制作IGZO：在由GI薄膜覆盖的栅图形上并且在源漏极之间进行IGZO成膜，得到IGZO图形；
(6)制作PV：在步骤(5)的成品上进行PV成膜，穿过PV薄膜在源漏极上制作接触孔；
(7)制作R/G/B：在步骤(6)的成品上进行R/G/B涂布，留出所述接触孔，并曝光得到所需图形；
(8)制作ITO：覆盖接触孔以及所述开口区域进行ITO成膜，然后曝光，得到ITO图形。
2.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(1)中，是通过物理气相沉积进行铜成膜。
3.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(2)中，是通过物理气相沉积进行栅成膜，然后曝光，再通过干法刻蚀得到栅图形，所述栅图形的材料为铜。
4.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(3)中，是通过化学气相沉积进行GI成膜，所述GI薄膜的材料为二氧化硅。
5.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(4)中，是通过物理气相沉积进行源漏极成膜，然后曝光，再通过湿法刻蚀得到源漏极图形，所述源漏极图形的材料为铜。
6.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(5)中，是通过物理气相沉积进行金属氧化物IGZO成膜，然后曝光，再通过湿法刻蚀得到IGZO图形。
7.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(6)中，是通过化学气相沉积进行PV成膜，PV的材料为SiO2。
8.根据权利要求1所述的基于IGZO-TFT的BOA液晶面板的制作方法，其特征在于，在步骤(8)中，是通过物理气相沉积进行ITO成膜，然后曝光，再通过湿法刻蚀得到ITO图形。
9.一种基于IGZO-TFT的BOA液晶面板的结构，其特征在于，包括基板，所述基板上具有黑色矩阵图形，所述黑色矩阵图形由铜膜进行氧等离子体处理得到的氧化铜形成，所述黑色矩阵图形作为遮挡层，并且所述黑色矩阵图形将开口区域裸露出来，所述黑色矩阵图形上具有栅图形，所述基板、黑色矩阵图形以及栅图形上具有GI薄膜，在由GI薄膜覆盖的栅图形上具有源漏极，并且在由GI薄膜覆盖的栅图形上以及源漏极之间具有IGZO薄膜，在所述源漏极、IGZO薄膜以及GI薄膜上具有PV薄膜，并且PV薄膜在对应源漏极处具有接触孔，在PV薄膜上除接触孔外具有R/G/B涂布层，覆盖接触孔以及所述开口区域具有ITO图形。
CN201610796745.2A 2016-08-31 2016-08-31 一种基于igzo-tft的boa液晶面板的结构及制作方法 Active CN106226965B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610796745.2A CN106226965B (zh) 2016-08-31 2016-08-31 一种基于igzo-tft的boa液晶面板的结构及制作方法
US15/328,920 US10191339B2 (en) 2016-08-31 2017-01-05 BOA liquid crystal panel based on IGZO-TFT and method for manufacturing the same
PCT/CN2017/070280 WO2018040464A1 (zh) 2016-08-31 2017-01-05 一种基于igzo-tft的boa液晶面板的结构及制作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610796745.2A CN106226965B (zh) 2016-08-31 2016-08-31 一种基于igzo-tft的boa液晶面板的结构及制作方法

Publications (2)

Publication Number Publication Date
CN106226965A CN106226965A (zh) 2016-12-14
CN106226965B true CN106226965B (zh) 2019-01-25

Family

ID=58073901

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610796745.2A Active CN106226965B (zh) 2016-08-31 2016-08-31 一种基于igzo-tft的boa液晶面板的结构及制作方法

Country Status (3)

Country Link
US (1) US10191339B2 (zh)
CN (1) CN106226965B (zh)
WO (1) WO2018040464A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106226965B (zh) * 2016-08-31 2019-01-25 深圳市华星光电技术有限公司 一种基于igzo-tft的boa液晶面板的结构及制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473571A (zh) * 2009-07-24 2012-05-23 佳能株式会社 发光屏和图像显示装置
CN103744225A (zh) * 2013-12-27 2014-04-23 深圳市华星光电技术有限公司 阵列基板及用该阵列基板的液晶显示面板
CN104503127A (zh) * 2014-12-01 2015-04-08 深圳市华星光电技术有限公司 阵列基板及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940627A (en) * 1987-02-04 1990-07-10 Andus Corporation Thin film artwork compounds
KR970062775A (ko) * 1996-02-03 1997-09-12 구자홍 액정표시소자의 블랙매트릭스 및 그 제조방법
KR100928494B1 (ko) * 2005-04-15 2009-11-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
JP2011142044A (ja) 2010-01-08 2011-07-21 Canon Inc 画像表示装置
KR20130027188A (ko) * 2011-09-07 2013-03-15 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US9853164B2 (en) * 2012-10-03 2017-12-26 Sharp Kabushiki Kaisha Semiconductor device and display device
CN103744224A (zh) 2013-12-27 2014-04-23 深圳市华星光电技术有限公司 阵列基板及用该阵列基板的液晶显示面板
CN106226965B (zh) 2016-08-31 2019-01-25 深圳市华星光电技术有限公司 一种基于igzo-tft的boa液晶面板的结构及制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473571A (zh) * 2009-07-24 2012-05-23 佳能株式会社 发光屏和图像显示装置
CN103744225A (zh) * 2013-12-27 2014-04-23 深圳市华星光电技术有限公司 阵列基板及用该阵列基板的液晶显示面板
CN104503127A (zh) * 2014-12-01 2015-04-08 深圳市华星光电技术有限公司 阵列基板及其制作方法

Also Published As

Publication number Publication date
CN106226965A (zh) 2016-12-14
US20180210298A1 (en) 2018-07-26
US10191339B2 (en) 2019-01-29
WO2018040464A1 (zh) 2018-03-08

Similar Documents

Publication Publication Date Title
US20180212043A1 (en) Method for manufacturing thin film transistor
US9761616B2 (en) Manufacturing method of array substrate with reduced number of patterning processes array substrate and display device
US9620646B2 (en) Array substrate, manufacturing method thereof and display device
US10566458B2 (en) Array substrate and method for manufacturing the same
US9455282B2 (en) Manufacturing method of an array substrate
CN102646632A (zh) 阵列基板及其制作方法和显示装置
WO2017219438A1 (zh) Tft基板的制造方法
US9484360B2 (en) Method for manufacturing oxide thin film transistor (TFT) array substrate
US20150340455A1 (en) Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, and display device
WO2017008497A1 (zh) 氧化物薄膜晶体管的制备方法
US9606393B2 (en) Fabrication method of substrate
US10020301B2 (en) Array substrate and manufacturing method for the same
CN105226015A (zh) 一种tft阵列基板及其制作方法
US10833107B2 (en) Thin film transistor, manufacturing method therefor, array substrate and display device
CN105374749B (zh) 一种薄膜晶体管及其制造方法
US20180188618A1 (en) Manufacturing method of fringe field switching array substrate
CN111180471A (zh) 阵列基板及其制造方法
US9053988B2 (en) TFT array substrate, manufacturing method of the same and display device
EP3151279B1 (en) Array substrate and manufacturing method therefor, and display device
US10177180B2 (en) Method for forming pixel structure
US9893096B2 (en) LTPS array substrate and method for producing the same
CN106033760B (zh) 像素结构的制作方法
CN106226965B (zh) 一种基于igzo-tft的boa液晶面板的结构及制作方法
CN102637634A (zh) 一种阵列基板及其制作方法、显示装置
US9893097B2 (en) LTPS array substrate and method for producing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant