CN103744225A - 阵列基板及用该阵列基板的液晶显示面板 - Google Patents

阵列基板及用该阵列基板的液晶显示面板 Download PDF

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CN103744225A
CN103744225A CN201310739608.1A CN201310739608A CN103744225A CN 103744225 A CN103744225 A CN 103744225A CN 201310739608 A CN201310739608 A CN 201310739608A CN 103744225 A CN103744225 A CN 103744225A
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oxide semiconductor
source
semiconductor layer
array base
base palte
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CN103744225B (zh
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曾志远
连水池
罗长诚
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/379,285 priority patent/US20160238872A1/en
Priority to PCT/CN2014/070425 priority patent/WO2015096222A1/zh
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明提供一种阵列基板及用该阵列基板的液晶显示面板，该阵列基板包括玻璃基板（20）、形成于玻璃基板（20）上的栅极（22）、形成于栅极（22）上的栅极绝缘层（23）、形成于栅极绝缘层（23）上的氧化物半导体层（24）、形成于氧化物半导体层（24）与栅极绝缘层（23）上的源/漏极（25）、形成于氧化物半导体层（24）、源/漏极（25）与栅极绝缘层（23）上的保护层（26）、形成于保护层（26）上的彩膜滤光片（27）、形成于彩膜滤光片（27）与保护层（26）上的平坦化层（28）及形成于平坦化层（28）上的像素电极（29），所述像素电极（29）电性连接于所述源/漏极（25），且该像素电极（29）线状排布，并围成一以“十”字结构为中心的发射状结构。

Description

阵列基板及用该阵列基板的液晶显示面板
技术领域
本发明涉及平面显示领域，尤其涉及一种阵列基板及用该阵列基板的液晶显示面板。
背景技术
液晶显示装置（Liquid Crystal Display，LCD）具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如移动电话、个人数字助理（PDA）、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组（Backlight module）。传统的液晶显示面板的结构是由一彩色滤光片基板（Color Filter）、一薄膜晶体管阵列基板（Thin Film Transistor Array Substrate，TFT Array Substrate）以及一配置于两基板间的液晶层（Liquid Crystal Layer）所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。由于液晶显示面板本身不发光，需要借由背光模组提供的光源来正常显示影像，因此，背光模组成为液晶显示装置的关键组件之一。背光模组依照光源入射位置的不同分成侧入式背光模组与直下式背光模组两种。直下式背光模组是将发光光源例如阴极萤光灯管(ColdCathode Fluorescent Lamp，CCFL)或发光二极管(Light Emitting Diode，LED)设置在液晶显示面板后方，直接形成面光源提供给液晶显示面板。而侧入式背光模组是将背光源LED灯条（Light bar）设于液晶显示面板侧后方的背板边缘处，LED灯条发出的光线从导光板（Light Guide Plate，LGP）一侧的入光面进入导光板，经反射和扩散后从导光板出光面射出，再经由光学膜片组，以形成面光源提供给液晶显示面板。
请参阅图1，其为现有的一种液晶显示面板的结构示意图，其包括阵列（Array）基板100、与阵列基板100贴合设置的彩膜（CF）基板300，及设于阵列基板100与彩膜基板300之间的液晶（LC）层500，其中，彩膜基板300上形成有像素结构以实现彩色显示。
随着技术的发展，现有一种液晶显示面板，其将像素结构整合于阵列基板上，其称为COA（color filter on array）技术。在该技术的基础上，现有一种共平面液晶显示面板（如图2所示），其包括：阵列基板100’、与阵列基板100’贴合设置的彩膜基板300’、及设于阵列基板100’与彩膜基板300’之间的液晶层500’，其中阵列基板100’上形成有薄膜晶体管阵列（TFT）与像素结构，薄膜晶体管阵列包括：栅极102、形成于栅极102上的栅极绝缘层104、形成于栅极绝缘层104上氧化物半导体层106及形成于栅极绝缘层104与氧化物半导体层106上的源/漏极108，氧化物半导体层106一般由铟镓锌氧化物（IGZO）形成，而在其形成制程中，形成氧化物半导体层106后，在氧化物半导体层106及栅极绝缘层104上需要先形成第二金属（M2）层，再进行蚀刻，然而，在第二金属层形成时，容易对氧化物半导体层106的表面造成损坏，使得该氧化物半导体层106的表面较为粗糙，会导致薄膜晶体管特性不佳的状况。
且，该种液晶显示面板的像素结构（如图3所示）的像素电极109为一整体平面结构，该种结构会导致液晶显示面板的开口率较小，进而导致液晶显示面板的显示效果不佳。
发明内容
本发明的目的在于提供一种阵列基板，其结构简单，且具有良好的电学特性。
本发明的另一目的在于提供一种液晶显示面板，其结构简单，开口率大，显示效果好。
为实现上述目的，本发明提供一种阵列基板，包括：玻璃基板、形成于玻璃基板上的栅极、形成于栅极与玻璃基板上的栅极绝缘层、形成于栅极绝缘层上的氧化物半导体层、形成于氧化物半导体层与栅极绝缘层上的源/漏极、形成于氧化物半导体层、源/漏极与栅极绝缘层上的保护层、形成于保护层上的彩膜滤光片、形成于彩膜滤光片与保护层上的平坦化层及形成于平坦化层上的像素电极，所述像素电极电性连接于所述源/漏极，且该像素电极线状排布，并围成一以“十”字结构为中心的发射状结构。
所述氧化物半导体层对应源/漏极之间设有凹槽，所述保护层形成于源/漏极、栅极绝缘层与凹槽上。
所述氧化物半导体层为铟镓锌氧化物层。
所述像素电极由纳米铟锡金属氧化物形成。
本发明还提供一种液晶显示面板，包括：阵列基板、与阵列基板贴合设置的彩膜基板及设于阵列基板与彩膜基板之间的液晶层，所述阵列基板包括：玻璃基板、形成于玻璃基板上的栅极、形成于栅极与玻璃基板上的栅极绝缘层、形成于栅极绝缘层上的氧化物半导体层、形成于氧化物半导体层与栅极绝缘层上的源/漏极、形成于氧化物半导体层、源/漏极与栅极绝缘层上的保护层、形成于保护层上的彩膜滤光片、形成于彩膜滤光片与保护层上的平坦化层及形成于平坦化层上的像素电极，所述像素电极电性连接于所述源/漏极，且该像素电极线状排布，并围成一以“十”字结构为中心的发射状结构。
所述氧化物半导体层对应源/漏极之间设有凹槽，所述保护层形成于源/漏极、栅极绝缘层与凹槽上。
所述氧化物半导体层为铟镓锌氧化物层；所述像素电极由纳米铟锡金属氧化物形成。
还包括设于阵列基板与彩膜基板之间的黑色矩阵及间隔物。
所述黑色矩阵及间隔物形成于彩膜基板上。
所述黑色矩阵及间隔物形成于阵列基板上。
本发明的有益效果：本发明的阵列基板及用该阵列基板的液晶显示面板，通过将彩膜滤光片设置于阵列基板上，并将像素电极设置成线状排布，并围成以“十”字结构为中心的发射状结构，有效增大了开口率，提高了显示效果，同时，在置于源/漏极之间的氧化物半导体层上形成凹槽，以去除源/漏极形成制程对氧化物半导体层表面损坏的部分，有效提升电学特性，而提升了液晶显示面板的品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的液晶显示面板的剖面结构示意图；
图2为现有的一种COA结构的液晶显示面板的结构示意图；
图3为图2中液晶显示面板的像素结构示意图；
图4为本发明阵列基板的结构示意图；
图5为本发明阵列基板的像素结构示意图；
图6为本发明液晶显示面板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4及图5，本发明提供一种阵列基板，包括：玻璃基板20、形成于玻璃基板20上的栅极22、形成于栅极22与玻璃基板20上的栅极绝缘层23、形成于栅极绝缘层23上的氧化物半导体层24、形成于氧化物半导体层24与栅极绝缘层23上的源/漏极25、形成于氧化物半导体层24、源/漏极25与栅极绝缘层23上的保护层26、形成于保护层26上的彩膜滤光片27、形成于彩膜滤光片27与保护层26上的平坦化层28及形成于平坦化层28上的像素电极29，所述像素电极29电性连接于所述源/漏极25，且该像素电极29线状排布，并围成一以“十”字结构为中心的发射状结构，有效增大了开口率，提高了显示效果。
其中，所述栅极22、栅极绝缘层23、氧化物半导体层24及源/漏极25组成薄膜晶体管，以实现驱动控制，所述彩膜滤光片27用于实现彩色显示。
进一步地，所述氧化物半导体层24对应源/漏极25之间设有凹槽242，所述保护层26形成于源/漏极25、栅极绝缘层23与凹槽242上；其具体工艺可为：在栅极绝缘层23上形成氧化物半导体层24后，在氧化物半导体层24与栅极绝缘层23上形成第二金属（M2）层，并对该第二金属层进行蚀刻，以形成源/漏极25，这时，在源/漏极25之间的氧化物半导体层24外露，但由于该外露部分的表面受到第二金属层的轰击而受损，会导致薄膜晶体管的特性不佳，那么，对该外露部分的氧化物半导体层24再进行一次蚀刻，把受损的部分蚀刻掉，即可保证薄膜晶体管的特性。
在本实施例中，所述氧化物半导体层24为铟镓锌氧化物（IGZO）层。所述像素电极29由纳米铟锡金属氧化物（ITO）形成。
请参阅图6，并参考图4及图5，本发明还提供一种液晶显示面板，包括：阵列基板40、与阵列基板40贴合设置的彩膜基板60及设于阵列基板40与彩膜基板60之间的液晶层80，所述阵列基板40包括：玻璃基板20、形成于玻璃基板20上的栅极22、形成于栅极22与玻璃基板20上的栅极绝缘层23、形成于栅极绝缘层23上的氧化物半导体层24、形成于氧化物半导体层24与栅极绝缘层23上的源/漏极25、形成于氧化物半导体层24、源/漏极25与栅极绝缘层23上的保护层26、形成于保护层26上的彩膜滤光片27、形成于彩膜滤光片27与保护层26上的平坦化层28及形成于平坦化层28上的像素电极29，所述像素电极29电性连接于所述源/漏极25，且该像素电极29线状排布，并围成一以“十”字结构为中心的发射状结构，有效增大了开口率，提高了显示效果。
其中，所述栅极22、栅极绝缘层23、氧化物半导体层24及源/漏极25组成薄膜晶体管，以驱动液晶层80中的液晶分子的偏转，进而实现对光线的选择，实现显示；所述彩膜滤光片27用于实现彩色显示。
进一步地，所述氧化物半导体层24对应源/漏极25之间设有凹槽242，所述保护层26形成于源/漏极25、栅极绝缘层23与凹槽242上；其具体工艺可为：在栅极绝缘层23上形成氧化物半导体层24后，在氧化物半导体层24与栅极绝缘层23上形成第二金属层，并对该第二金属层进行蚀刻，以形成源/漏极25，这时，在源/漏极25之间的氧化物半导体层24外露，但由于该外露部分的表面受到第二金属层的轰击而受损，会导致薄膜晶体管的特性不佳，那么，对该外露部分的氧化物半导体层24再进行一次蚀刻，把受损的部分蚀刻掉，即可保证薄膜晶体管的特性。
在本实施例中，所述氧化物半导体层24为铟镓锌氧化物层。所述像素电极29由纳米铟锡金属氧化物形成。
值得一提的是，本发明的液晶显示面板还包括设于阵列基板40与彩膜基板60之间的黑色矩阵50及间隔物70。该黑色矩阵50及间隔物70可形成于彩膜基板60上或阵列基板40上。在本实施例中，所述黑色矩阵50及间隔物70形成于彩膜基板60上，且位于形成于彩膜基板60上的公共电极72的下方。
综上所述，本发明的阵列基板及用该阵列基板的液晶显示面板，通过将彩膜滤光片设置于阵列基板上，并将像素电极设置成线状排布，并围成以“十”字结构为中心的发射状结构，有效增大了开口率，提高了显示效果，同时，在置于源/漏极之间的氧化物半导体层上形成凹槽，以去除源/漏极形成对氧化物半导体层表面损坏的部分，有效提升电学特性，而提升了液晶显示面板的品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种阵列基板，其特征在于，包括：玻璃基板（20）、形成于玻璃基板（20）上的栅极（22）、形成于栅极（22）与玻璃基板（20）上的栅极绝缘层（23）、形成于栅极绝缘层（23）上的氧化物半导体层（24）、形成于氧化物半导体层（24）与栅极绝缘层（23）上的源/漏极（25）、形成于氧化物半导体层（24）、源/漏极（25）与栅极绝缘层（23）上的保护层（26）、形成于保护层（26）上的彩膜滤光片（27）、形成于彩膜滤光片（27）与保护层（26）上的平坦化层（28）及形成于平坦化层（28）上的像素电极（29），所述像素电极（29）电性连接于所述源/漏极（25），且该像素电极（29）线状排布，并围成一以“十”字结构为中心的发射状结构。
2.如权利要求1所述的阵列基板，其特征在于，所述氧化物半导体层（24）对应源/漏极（25）之间设有凹槽（242），所述保护层（26）形成于源/漏极（25）、栅极绝缘层（23）与凹槽（242）上。
3.如权利要求1所述的阵列基板，其特征在于，所述氧化物半导体层（24）为铟镓锌氧化物层。
4.如权利要求1所述的阵列基板，其特征在于，所述像素电极（29）由纳米铟锡金属氧化物形成。
5.一种液晶显示面板，其特征在于，包括：阵列基板（40）、与阵列基板（40）贴合设置的彩膜基板（60）及设于阵列基板（40）与彩膜基板（60）之间的液晶层（80），所述阵列基板（40）包括：玻璃基板（20）、形成于玻璃基板（20）上的栅极（22）、形成于栅极（22）与玻璃基板（20）上的栅极绝缘层（23）、形成于栅极绝缘层（23）上的氧化物半导体层（24）、形成于氧化物半导体层（24）与栅极绝缘层（23）上的源/漏极（25）、形成于氧化物半导体层（24）、源/漏极（25）与栅极绝缘层（23）上的保护层（26）、形成于保护层（26）上的彩膜滤光片（27）、形成于彩膜滤光片（27）与保护层（26）上的平坦化层（28）及形成于平坦化层（28）上的像素电极（29），所述像素电极（29）电性连接于所述源/漏极（25），且该像素电极（29）线状排布，并围成一以“十”字结构为中心的发射状结构。
6.如权利要求5所述的液晶显示面板，其特征在于，所述氧化物半导体层（24）对应源/漏极（25）之间设有凹槽（242），所述保护层（26）形成于源/漏极（25）、栅极绝缘层（23）与凹槽（242）上。
7.如权利要求5所述的液晶显示面板，其特征在于，所述氧化物半导体层（24）为铟镓锌氧化物层；所述像素电极（29）由纳米铟锡金属氧化物形成。
8.如权利要求5所述的液晶显示面板，其特征在于，还包括设于阵列基板（40）与彩膜基板（60）之间的黑色矩阵（50）及间隔物（70）。
9.如权利要求8所述的液晶显示面板，其特征在于，所述黑色矩阵（50）及间隔物（70）形成于彩膜基板（60）上。
10.如权利要求8所述的液晶显示面板，其特征在于，所述黑色矩阵（50）及间隔物（70）形成于阵列基板（40）上。
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