WO2015096222A1 - 阵列基板及用该阵列基板的液晶显示面板 - Google Patents

阵列基板及用该阵列基板的液晶显示面板 Download PDF

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Publication number
WO2015096222A1
WO2015096222A1 PCT/CN2014/070425 CN2014070425W WO2015096222A1 WO 2015096222 A1 WO2015096222 A1 WO 2015096222A1 CN 2014070425 W CN2014070425 W CN 2014070425W WO 2015096222 A1 WO2015096222 A1 WO 2015096222A1
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Prior art keywords
layer
source
oxide semiconductor
drain
liquid crystal
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PCT/CN2014/070425
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English (en)
French (fr)
Inventor
曾志远
连水池
罗长诚
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深圳市华星光电技术有限公司
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Priority to US14/379,285 priority Critical patent/US20160238872A1/en
Publication of WO2015096222A1 publication Critical patent/WO2015096222A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1339—Gaskets; Spacers; Sealing of cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
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    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor

Definitions

  • the present invention relates to the field of flat display, and more particularly to an array substrate and a liquid crystal display panel using the same.
  • Liquid Crystal Display has many advantages, such as mobile phone, personal digital assistant (PDA), digital camera, computer screen or laptop screen. Wait.
  • liquid crystal display devices which include a casing, a liquid crystal display panel disposed in the casing, and a backlight module (Backlight module) disposed in the casing.
  • the structure of the conventional liquid crystal display panel is composed of a color filter substrate (Color Filter), a thin film transistor Array Substrate (TFT Array Substrate), and a substrate between the two substrates.
  • the liquid crystal layer is formed by applying a driving voltage on two glass substrates to control the rotation of the liquid crystal molecules of the liquid crystal layer, and refracting the light of the backlight module to produce a picture toast due to the liquid crystal display panel
  • the light source itself does not emit light, and the light source provided by the backlight module is required to display the image normally. Therefore, the backlight module becomes one of the key components of the liquid crystal display device.
  • the backlight module is divided into a side-lit backlight module and a direct-lit backlight module according to different light source injection positions.
  • a light source such as a cathode fluorescent lamp (CCFL) or a light emitting diode (LED) is disposed behind the liquid crystal display panel, and a surface light source is directly formed and supplied to the liquid crystal display panel.
  • the side-lit backlight module has a backlight LED strip (Light bar) disposed at the edge of the back panel behind the liquid crystal display panel, and the light emitted by the LED strip is from the side of the light guide plate (LGP).
  • the light-incident surface enters the light guide plate, is reflected and diffused, and is emitted from the light-emitting surface of the light guide plate, and then passes through the optical film group to form a surface light source to be provided to: the night crystal display surface.
  • FIG. 1 is a schematic structural diagram of a conventional liquid crystal display panel, which comprises an Array substrate. 100, a color film (CF) substrate disposed on the array substrate 100, 300, and A liquid crystal (LC) layer 500 between the array substrate 100 and the color filter substrate 300, wherein a pixel structure is formed on the color filter substrate 300 to realize color display.
  • CF color film
  • LC liquid crystal
  • liquid crystal display panel which integrates a pixel structure on an array substrate, which is called a COA (color filter on array) technology.
  • COA color filter on array
  • coplanar liquid crystal display panel shown in FIG. 2 , which includes: an array substrate 100 ′, a color filter substrate 300 ′ disposed on the array substrate 100 ′, and an array substrate 100 ′ and a color filter substrate 300 .
  • the thin film transistor array includes: a gate electrode 102, a gate insulating layer 104 formed on the bridge 102, and formed On the gate insulating layer 104, an oxide semiconductor layer 106 and a source/drain 108 formed on the gate insulating layer 104 and the oxide semiconductor layer 106, the oxide semiconductor layer 106 is generally made of indium gallium zinc oxide (IGZO).
  • IGZO indium gallium zinc oxide
  • a second metal (M2) layer needs to be formed on the oxide semiconductor layer 106 and the gate insulating layer 104, and then etched, however, in the second When the metal layer is formed, damage to the surface of the oxide semiconductor layer 106 is liable to occur, so that the surface of the oxide semiconductor layer 106 is rough, which may result in poor characteristics of the thin film transistor.
  • the pixel electrode 109 of the pixel structure of the liquid crystal display panel (shown in FIG. 3) is an overall planar structure, which causes the aperture ratio of the liquid crystal display panel to be small, thereby causing the display effect of the liquid crystal display panel not to be good.
  • An object of the present invention is to provide an array substrate which is simple in structure and has good electrical characteristics.
  • Another object of the present invention is to provide a liquid crystal display panel which has a simple structure, a large aperture ratio, and a display effect: ⁇ .
  • the present invention provides an array substrate comprising: a glass substrate, a gate formed on the glass substrate, a gate insulating layer formed on the gate and the glass substrate, and an oxide formed on the gate insulating layer a semiconductor layer, a source/drain formed on the oxide semiconductor layer and the gate insulating layer, a protective layer formed on the oxide semiconductor layer, the source/drain and the gate insulating layer, and a color formed on the protective layer a film filter, a planarization layer formed on the color filter and the protective layer, and a pixel electrode formed on the planarization layer, the pixel electrode is electrically connected to the source/drain, and the pixel electrode It is arranged in a line and encloses an emission structure centered on the "ten" structure.
  • the oxide semiconductor layer is provided with a recess between the source/drain electrodes, and the protective layer is formed on the source/drain, the gate insulating layer and the recess.
  • the oxide semiconductor layer is an indium gallium zinc oxide layer
  • the pixel electrode is formed of a nano indium tin metal oxide.
  • the present invention also provides a liquid crystal display panel, comprising: an array substrate, a color film substrate disposed adjacent to the array substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate, wherein the array substrate comprises: a glass substrate, forming a gate on the glass substrate, formed on the gate and the glass substrate a gate insulating layer, an oxide semiconductor layer formed on the *polar insulating layer, a source Z drain formed on the oxide semiconductor layer and the gate insulating layer, formed on the oxide semiconductor layer, source/drain and gate a protective layer on the insulating layer, and a color filter formed on the protective layer.
  • a planarization layer formed on the color filter and the protective layer, and a pixel electrode formed on the planarization layer, wherein the pixel electrode is electrically connected to the source/drain, and the pixel electrode is arranged in a line. And it is surrounded by an emission structure centered on the "ten" structure.
  • the oxide semiconductor layer is provided with a recess between the source/drain electrodes, and the protective layer is formed on the source/drain, the gate insulating layer and the recess.
  • the oxide semiconductor layer is an indium gallium zinc oxide layer; and the pixel electrode is formed of a nano indium tin metal oxide.
  • a black matrix and a spacer disposed between the array substrate and the color filter substrate are further included.
  • the black matrix and the spacer are formed on the color filter substrate.
  • the black matrix and the spacer are formed on the array substrate.
  • the present invention also provides a liquid crystal display panel, comprising: an array substrate, a color film substrate disposed adjacent to the array substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate, wherein the array substrate comprises: a glass substrate, forming a gate electrode on the glass substrate, an oxide semiconductor layer formed on the gate insulating layer by a gate insulating layer formed on the electrode and the glass substrate, and source/drain formed on the oxide semiconductor layer and the *polar insulating layer a protective layer formed on the oxide semiconductor layer, the source/drain and the *polar insulating layer, a color filter formed on the protective layer, a planarization layer formed on the color filter and the protective layer, and a pixel electrode formed on the planarization layer, the pixel electrode is electrically connected to the source/drain, and the pixel electrode is arranged in a line shape and encloses an emission structure centered on a "ten" structure ;
  • the oxide semiconductor layer is provided with a groove between the source/drain, and the protective layer is formed on the source/drain, the gate insulating layer and the groove.
  • the oxide semiconductor layer is an indium gallium zinc oxide layer; and the pixel electrode is formed of a nano indium tin metal oxide.
  • a black matrix and a spacer disposed between the array substrate and the color filter substrate are further included.
  • the black matrix and the spacer are formed on the color filter substrate.
  • the black matrix and the spacer are formed on the array substrate.
  • the array substrate of the present invention and the liquid crystal display panel using the array substrate are provided with a color filter according to an array substrate, and the pixel electrodes are arranged in a line arrangement and surrounded by
  • the ten-characteristic structure is a center-like emission structure, which effectively increases the aperture ratio and improves the display effect.
  • a recess is formed on the oxide semiconductor layer interposed between the source/drain to remove the source/drain. Forming a part of the process that damages the surface of the oxide semiconductor layer, effectively improving the electrical Characteristics, which improve the quality of the LCD panel
  • FIG. 1 is a schematic cross-sectional structural view of a conventional liquid crystal display panel
  • FIG. 2 is a schematic structural view of a liquid crystal display panel of a conventional COA structure
  • FIG. 3 is a schematic diagram of a pixel structure of the liquid crystal display panel of FIG.
  • FIG. 5 is a schematic diagram of a pixel structure of an array substrate according to the present invention.
  • FIG. 6 is a schematic structural view of a liquid crystal display panel of the present invention. Specific travel mode
  • the present invention provides an array substrate, comprising: a glass substrate 20, a ⁇ -pole 22 formed on the glass substrate 20, and a gate insulating layer 23 formed on the gate 22 and the glass substrate 20.
  • An oxide semiconductor layer 24 formed on the gate insulating layer 23, a source Z drain 25 formed on the oxide semiconductor layer 24 and the gate insulating layer 23, an oxide semiconductor layer 24, and a source/drain 25 are formed.
  • the cabinet electrode 22, the cabinet insulating layer 23, the oxide semiconductor layer 24, and the source/drain electrodes 25 constitute a thin film transistor for driving control, and the color filter 27 is used for color display.
  • the oxide semiconductor layer 24 is provided with a recess 242 corresponding to the source/drain 25, and the protective layer 26 is formed on the source/drain 25, the drain insulating layer 23 and the recess 242;
  • the specific process may be: after forming the oxide semiconductor layer 24 on the shed-polar insulating layer 23, in the oxide A second metal (M2) layer is formed on the semiconductor layer 24 and the gate insulating layer 23, and the second metal layer is etched to form a source/drain 25, at which time oxidation between the source Z drain 25 is performed.
  • M2 second metal
  • the semiconductor layer 24 is exposed, but since the surface of the exposed portion is damaged by the bombardment of the second metal layer, which may result in poor characteristics of the thin film transistor, the exposed portion of the oxide semiconductor layer 24 is again subjected to an exclusive process. , the damaged part is etched away to ensure the characteristics of the thin film transistor.
  • the oxide semiconductor layer 24 is an indium gallium zinc oxide (IGZO) layer.
  • the pixel electrode 29 is formed of nano indium tin metal oxide (ITO).
  • the present invention further provides a liquid crystal display panel, comprising: an array substrate 40 , a color film substrate 60 disposed on the array substrate 40 , and the array substrate 40 and the color filter substrate
  • the liquid crystal layer 80 between the 60, the array substrate 40 includes: a glass substrate 20, a gate electrode 22 formed on the glass substrate 20, and a gate insulating layer 23 formed on the ⁇ -pole 22 and the glass substrate 20, formed on The oxide semiconductor layer 24 on the gate-electrode insulating layer 23, the source/drain electrodes 25 formed on the oxide semiconductor layer 24 and the gate insulating layer 23, the oxide semiconductor layer 24, the source/drain electrodes 25 and * a protective layer 26 on the pole insulating layer 23, a color filter 27 formed on the protective layer 26, a planarization layer 28 formed on the color filter 27 and the protective layer 26, and a planarization layer 28 formed on the planarization layer 28.
  • the pixel electrode 29 is electrically connected to the source/drain 25, and the
  • the cabinet pole 22 is.
  • the gate insulating layer 23, the oxide semiconductor layer 24 and the source Z drain 25 constitute a thin film transistor for driving the deflection of the liquid crystal molecules in the liquid crystal layer 80, thereby realizing the selection of light and realizing display; the color filter 27 is used to achieve color display.
  • a recess 242 is formed between the source/drain electrodes 25 of the oxide semiconductor layer 24, and the protective layer 26 is formed on the source/drain electrodes 25, the gate insulating layer 23 and the recess 242;
  • the specific process may be: after the oxide semiconductor layer 24 is formed on the gate insulating layer 23, a second metal layer is formed on the oxide semiconductor layer 24 and the gate insulating layer 23, and the second metal layer is etched to The source/drain 25 is formed, at this time, the oxide semiconductor layer 24 between the source/drain electrodes 25 is exposed, but the surface of the exposed portion is damaged by bombardment of the second metal layer, which causes characteristics of the thin film transistor. If the exposed portion of the oxide semiconductor layer 24 is etched again and the damaged portion is etched away, the characteristics of the thin film transistor can be ensured.
  • the oxide semiconductor layer 24 is an indium gallium zinc oxide layer.
  • the pixel electrode 29 is formed of a nano indium tin metal oxide.
  • the liquid crystal display panel of the present invention further includes a black matrix 50 and a spacer 70 disposed between the array substrate 40 and the color filter substrate 60.
  • the black matrix 50 and the spacer 70 may be formed on the color filter substrate 60 or on the array substrate 40.
  • the black matrix 50 And a spacer 70 is formed on the color filter substrate 60 and located under the common bakelite £72 formed on the color filter substrate 60.
  • the array substrate of the present invention and the liquid crystal display panel using the array substrate are disposed on the array substrate by the color filter, and the pixel electrodes are arranged in a line arrangement, and are surrounded by "The structure of the word-centered emission structure effectively increases the aperture ratio and improves the display effect.
  • a recess is formed on the oxide semiconductor layer placed between the source/drain to remove the source Z drain. The part of the surface of the oxide semiconductor layer is damaged, and the electrical characteristics are effectively improved, and the quality of the display panel is improved.

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Abstract

一种阵列基板，包括玻璃基板（20），形成于玻璃基板（20）上的栅极（22），形成于栅极（22）上的栅极绝缘层（23），形成于栅极绝缘层（23）上的氧化物半导体层（24），形成于氧化物半导体层（24）与栅极绝缘层（23）上的源/漏极（25），形成于氧化物半导体层（24），源/漏极（25）与栅极绝缘层（23）上的保护层（26），形成于保护层（26）上的彩膜滤光片（27），形成于彩膜滤光片（27）与保护层（26）上的平坦化层（28）及形成于平坦化层（28）上的像素电极（29），像素电极（29）电性连接于源/漏极（25），且该像素电极（29）线状排布，并围成一以"十"字结构为中心的发射状结构。还提供一种使用该阵列基板的液晶显示面板。该阵列基板及液晶显示面板有效增大了开口率，提高了显示效果。

Description

本发明涉及平面显示领域， 尤其涉及一种阵列基板及用该阵列基板的 液晶显示面板。
液晶显示装置 ( Liquid Crystal Display, LCD )具有机身薄、 省电、 无 辐射等众多优点， 得到了广泛的应用， 如移动电话、 个人数字助理 ( PDA ) 、 数字相机、 计算机屏幕或笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示装置， 其包括壳 体、 设于壳体内的液晶显示面板及设于壳体内的背光模组 （ Backlight module ) 。 传统的液晶显示面板的结构是由一彩色滤光片基板 （ Color Filter ) ■' 一— 月莫晶 4 ' 「车歹 基 ( Thin Film Transistor Array Substrate , TFT Array Substrate ) 以及一配置于两基板间的液晶层 ( Liquid Crystal Layer )所构成， 其工作原理是通过在两片玻璃基板上施加驱动电压来控制 液晶层的液晶分子的旋转， 将背光模组的光线折射出来产生画面„ 由于液 晶显示面板本身不发光， 需要借由背光模组提供的光源来正常显示影像， 因此， 背光模组成为液晶显示装置的关键组件之一。 背光模组依照光源入 射位置的不同分成侧入式背光模组与直下式背光模组两种。 直下式背光模 组是将发光光源例如阴极萤光灯管 （Cold Cathode Fluorescent Lamp, CCFL) 或发光二极管（Light Emitting Diode, LED)设置在液晶显示面板后方， 直接 形成面光源提供给液晶显示面板。 而侧入式背光模组是将背光源 LED 灯 条 ( Light bar )设于液晶显示面板侧后方的背板边缘处 , LED 灯条发出的 光线从导光板 ( Light Guide Plate, LGP )一侧的入光面进.入导光板， 经反 射和扩散后从导光板出光面射出， 再经由光学膜片组， 以形成面光源提供 给:夜晶显示面 £。
请参阅图 1， 其为现有的一种液晶显示面板的结构示意图， 其包括阵 列 （Array )基板. 100、 与阵列基板. 100贴合设置的彩膜（ CF )基板. 300， 及设于阵列基板 100与彩膜基板 300之间的液晶 （LC )层 500, 其中， 彩 膜基板 300上形成有像素结构以实现彩色显示。
随着技术的发展， 现有一种液晶显示面板， 其将像素结构整合于阵列 基板上， 其称为 COA ( color filter on array )技术。 在该技术的基础上， 现 有一种共平面液晶显示面板（如图 2所示） ， 其包括： 阵列基板 100'、 与 阵列基板 100'贴合设置的彩膜基板 300'、 及设于阵列基板 100'与彩膜基板 300，之间的液晶层 500'， 其中阵列基板 100，上形成有薄膜晶体管阵列 ( TFT ) 与像素结构， 薄膜晶体管阵列包括： 柵极 102、 形成于橋极 102 上的柵极绝缘层 104、 形成于柵极绝缘层 104上氧化物半导体层 106及形 成于柵极绝缘层 104与氧化物半导体层 106上的源 /漏极 108, 氧化物半导 体层 106—般由铟镓锌氧化物 （IGZO )形成， 而在其形成制程中， 形成氧 化物半导体层 106后， 在氧化物半导体层 106及栅极绝缘层 104上需要先 形成第二金属 ( M2 )层， 再进行蚀刻， 然而， 在第二金属层形成时， 容易 对氧化物半导体层 106的表面造成损坏， 使得该氧化物半导体层 106的表 面较为粗糙， 会导致薄膜晶体管特性不佳的状 ¾。
且， 该种液晶显示面板的像素结构 （如图 3所示） 的像素电极 109为 一整体平面结构， 该种结构会导致液晶显示面板的开口率较小， 进而导致 液晶显示面板的显示效果不佳。 发明内容
本发明的目的在于提供一种阵列基板， 其结构简单， 且具有良好的电 学特性。
本发明的另一目的在于提供一种液晶显示面板， 其结构简单， 开口率 大， 显示效果：^。
为实现上述目的， 本发明提供一种阵列基板， 包括： 玻璃基板、 形成 于玻璃基板上的柵极、 形成于柵极与玻璃基板上的柵极绝缘层、 形成于柵 极绝缘层上的氧化物半导体层、 形成于氧化物半导体层与柵极绝缘层上的 源 /漏极、 形成于氧化物半导体层、 源 /漏极与栅极绝缘层上的保护层、 形 成于保护层上的彩膜滤光片、 形成于彩膜滤光片与保护层上的平坦化层及 形成于平坦化层上的像素电极， 所述像素电极电性连接于所述源 /漏极， 且 该像素电极线状排布， 并围成一以 "十" 字结构为中心的发射状结构。
所述氧化物半导体层对应源 /漏极之间设有凹槽， 所述保护层形成于源 /漏极、 栅极绝缘层与凹槽上。
所述氧化物半导体层为铟镓锌氧化物层„
所述像素电极由纳米铟锡金属氧化物形成。
本发明还提供一种液晶显示面板， 包括： 阵列基板、 与阵列基板贴合 设置的彩膜基板及设于阵列基板与彩膜基板之间的液晶层， 所述阵列基板 包括： 玻璃基板、 形成于玻璃基板上的栅极、 形成于柵极与玻璃基板上的 栅极绝缘层、 形成于 *极绝缘层上的氧化物半导体层、 形成于氧化物半导 体层与栅极绝缘层上的源 Z漏极、 形成于氧化物半导体层、 源 /漏极与栅极 绝缘层上的保护层、 形成于保护层上的彩膜滤光片。 形成于彩膜滤光片与 保护层上的平坦化层及形成于平坦化层上的像素电极， 所述像素电极电性 连接于所述源 /漏极， 且该像素电极线状排布， 并围成一以 "十" 字结构为 中心的发射状结构。
所述氧化物半导体层对应源 /漏极之间设有凹槽， 所述保护层形成于源 /漏极、 栅极绝缘层与凹槽上。
所述氧化物半导体层为铟镓锌氧化物层； 所述像素电极由纳米铟锡金 属氧化物形成。
还包括设于阵列基板与彩膜基板之间的黑色矩阵及间隔物。
所述黑色矩阵及间隔物形成于彩膜基板上。
所述黑色矩阵及间隔物形成于阵列基板上。
本发明还提供一种液晶显示面板， 包括： 阵列基板、 与阵列基板贴合 设置的彩膜基板及设于阵列基板与彩膜基板之间的液晶层， 所述阵列基板 包括： 玻璃基板、 形成于玻璃基板上的栅极、 形成于 极与玻璃基板上的 柵极绝缘层 形成于栅极绝缘层上的氧化物半导体层、 形成于氧化物半导 体层与 *极绝缘层上的源 /漏极、 形成于氧化物半导体层、 源 /漏极与 *极 绝缘层上的保护层、 形成于保护层上的彩膜滤光片、 形成于彩膜滤光片与 保护层上的平坦化层及形成于平坦化层上的像素电极， 所述像素电极电性 连接于所述源 /漏极， 且该像素电极线状排布， 并围成一以 "十" 字结构为 中心的发射状结构；
其中， 所述氧化物半导体层对应源 /漏极之间设有凹槽， 所述保护层形 成于源 /漏极、 柵极绝缘层与凹槽上。
所述氧化物半导体层为铟镓锌氧化物层； 所述像素电极由纳米铟锡金 属氧化物形成。
还包括设于阵列基板与彩膜基板之间的黑色矩阵及间隔物。
所述黑色矩阵及间隔物形成于彩膜基板上。
所述黑色矩阵及间隔物形成于阵列基板上。
本发明的有益效果： 本发明的阵列基板及用该阵列基板的液晶显示面 板， 通过将彩膜滤光片设置于阵列基板上， 并将像素电极设置成线状排 布， 并围成以 "十" 字结构为中心的发射状结构， 有效增大了开口率， 提 高了显示效果， 同时， 在置于源 /漏极之间的氧化物半导体层上形成凹槽， 以去除源 /漏极形成制程对氧化物半导体层表面损坏的部分， 有效提升电学 特性， 而提升了液晶显示面板的品质„
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与附图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。
' 下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见
附图中，
图 1为现有的液晶显示面板的剖面结构示意图；
图 2为现有的一种 COA结构的液晶显示面板的结构示意图； 图 3为图 2中液晶显示面板的像素结构示意图；
图 4为本发明阵列基板的结构示意图；
图 5为本发明阵列基板的像素结构示意图；
图 6为本发明液晶显示面板的结构示意图。 具体实旅方式
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 4及图 5， 本发明提供一种阵列基板， 包括： 玻璃基板 20、 形成于玻璃基板 20上的楣 -极 22、 形成于栅极 22与玻璃基板 20上的栅极 绝缘层 23、 形成于柵极绝缘层 23上的氧化物半导体层 24、 形成于氧化物 半导体层 24 与栅极绝缘层 23 上的源 Z漏极 25、 形成于氧化物半导体层 24、 源 /漏极 25与栅极绝缘层 23上的保护层 26、 形成于保护层 26上的彩 膜滤光片 27、 形成于彩膜滤光片 27与保护层 26上的平坦化层 28及形成 于平坦化层 28上的像素电极 29， 所述像素电极 29 电性连接于所述源 /漏 极 25 , 且该像素电极 29线状排布， 并围成一以 "十" 字结构为中心的发 射状结构， 有效增大了开口率， 提高了显示效果。
其中， 所述櫥极 22、 櫥极绝缘层 23、 氧化物半导体层 24及源 /漏极 25组成薄膜晶体管， 以实现驱动控制， 所述彩膜滤光片 27用于实现彩色 显示。
进一步地， 所述氧化物半导体层 24 对应源 /漏极 25 之闾设有凹槽 242 , 所述保护层 26形成于源 /漏极 25、 楣-极绝缘层 23与凹槽 242上； 其 具体工艺可为： 在棚 _极绝缘层 23上形成氧化物半导体层 24后， 在氧化物 半导体层 24与櫥极绝缘层 23上形成第二金属 （ M2 )层， 并对该第二金属 层进行蚀刻， 以形成源 /漏极 25， 这时， 在源 Z漏极 25之间的氧化物半导体 层 24 外露， 但由于该外露部分的表面受到第二金属层的轰击而受损， 会 导致薄膜晶体管的特性不佳， 那么， 对该外露部分的氧化物半导体层 24 再进行一次独刻， 把受损的部分蚀刻掉， 即可保证薄膜晶体管的特性。
在本实施例中， 所述氧化物半导体层 24 为铟镓锌氧化物 （IGZO ) 层。 所述像素电极 29由纳米铟锡金属氧化物 （ITO )形成。
请参阅图 6, 并参考图 4及图 5 , 本发明还提供一种液晶显示面板， 包括： 阵列基板 40、 与阵列基板 40贴合设置的彩膜基板 60及 于阵列基 板 40与彩膜基板 60之间的液晶层 80， 所述阵列基板 40包括： 玻璃基板 20、 形成于玻璃基板 20上的栅极 22、 形成于楣-极 22与玻璃基板 20上的 柵极绝缘层 23、 形成于棚-极绝缘层 23上的氧化物半导体层 24、 形成于氧 化物半导体层 24与槲极绝缘层 23 上的源 /漏极 25、 形成于氧化物半导体 层 24、 源 /漏极 25与 *极绝缘层 23上的保护层 26、 形成于保护层 26上的 彩膜滤光片 27、 形成于彩膜滤光片 27与保护层 26上的平坦化层 28及形 成于平坦化层 28上的像素电极 29， 所述像素电极 29 电性连接于所述源 / 漏极 25， 且该像素电极 29 线状排布， 并围成一以 "十" 字结构为中心的 发射状结构， 有效增大了开口率， 提高了显示效果。
其中， 所述櫥极 22。 櫥极绝缘层 23、 氧化物半导体层 24及源 Z漏极 25组成薄膜晶体管， 以驱动液晶层 80 中的液晶分子的偏转， 进而实现对 光线的选择， 实现显示； 所述彩膜滤光片 27用于实现彩色显示。
进一步地， 所述氧化物半导体层 24 对应源 /漏极 25 之间设有凹槽 242 , 所述保护层 26形成于源 /漏极 25、 棚_极绝缘层 23与凹槽 242上； 其 具体工艺可为： 在栅^ 绝缘层 23上形成氧化物半导体层 24后， 在氧化物 半导体层 24与栅极绝缘层 23上形成第二金属层， 并对该第二金属层进行 蚀刻， 以形成源 /漏极 25， 这时， 在源 /漏极 25之间的氧化物半导体层 24 外露， 但由于该外露部分的表面受到第二金属层的轰击而受损， 会导致薄 膜晶体管的特性不佳， 那么， 对该外露部分的氧化物半导体层 24 再进行 一次蚀刻， 把受损的部分蚀刻掉， 即可保证薄膜晶体管的特性。
在本实施例中， 所述氧化物半导体层 24 为铟镓锌氧化物层„ 所述像 素电极 29由纳米铟锡金属氧化物形成。
值得一提的是， 本发明的液晶显示面板还包括设于阵列基板 40 与彩 膜基板 60之间的黑色矩阵 50及间隔物 70。 该黑色矩阵 50及间隔物 70可 形成于彩膜基板 60上或阵列基板 40上。 在本实施例中， 所述黑色矩阵 50 及间隔物 70形成于彩膜基板 60上， 且位于形成于彩膜基板 60上的公共 电木 £ 72的下方。
综上所述， 本发明的阵列基板及用该阵列基板的液晶显示面板， 通过 将彩膜滤光片设置于阵列基板上， 并将像素电极设置成线状排布， 并围成 以 "十" 字结构为中心的发射状结构， 有效增大了开口率， 提高了显示效 果， 同时， 在置于源 /漏极之间的氧化物半导体层上形成凹槽， 以去除源 Z 漏极形成对氧化物半导体层表面损坏的部分， 有效提升电学特性， 而提升 了 ^良晶显示面板的品质。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形， 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

权 利 要 求 一种阵列基板， 包括： 玻璃基板、 形成于玻璃基板上的柵极、 形 成于栅极与玻璃基板上的橋极绝缘层、 形成于柵极绝缘层上的氧化物半导 体层、 形成于氧化物半导体层与柵极绝缘层上的源 /漏极、 形成于氧化物半 导体层、 源 /漏极与柵极绝缘层上的保护层、 形成于保护层上的彩膜滤光 片 > 形成于彩膜滤光片与保护层上的平坦化层及形成于平坦化层上的像素 电极， 所述像素电极电性连接于所述源 Z漏极， 且该像素电极线状排布， 并 围成一以 "十" 字结构为中心的发射状结构。
2、 如权利要求 1 所述的阵列基板， 其中， 所述氧化物半导体层对应 源 Z漏极之间设有凹槽， 所述保护层形成于源 /漏极， 柵极绝缘层与凹槽
3、 如权利要求 1 所述的阵列基板， 其中， 所述氧化物半导体层为铟 4、 如权利要求 1 所述的阵列基板， 其中， 所述像素电极由纳米铟锡
" 5 , 一种液晶显示面板， 包括： 阵列基板、 与阵列基板贴合设置的彩 膜基板及设于阵列基板与彩膜基板之间的液晶层， 所述阵列基板包括： 玻 璃基板、 形成于玻璃基 上的栅极、 形成于栅极与玻璃基板上的栅极绝缘 层、 形成于柵极绝缘层上的氧化物半导体层、 形成于氧化物半导体层与棚- 极绝缘层上的源 /漏极、 形成于氧化物半导体层、 源 /漏极与栅极绝缘层上 的保护层、 形成于保护层上的彩膜滤光片、 形成于彩膜滤光片与保护层上 的平坦化层及形成于平坦化层上的像素电极， 所述像素电极电性连接于所 述源 /漏极， 且该像素电极线状排布， 并围成一以 "十" 字结构为中心的发 射状结构。
6、 如权利要求 5 所述的液晶显示面板， 其中， 所述氧化物半导体层 对应源 /漏极之间设有凹槽， 所述保护层形成于源 /漏极、 栅极绝缘层与凹 構 V
7、 如权利要求 5 所述的液晶显示面板， 其中， 所述氧化物半导体层 为铟镓锌氧化物层； 所述像素电极由纳米铟锡金属氧化物形成。
8、 如权利要求 5 所述的液晶显示面板， 还包括设于阵列基板与彩膜 基板之间的黑色矩阵及间隔物。
9、 如权利要求 8 所述的液晶显示面板， 其中， 所述黑色矩阵及间隔 物形成于彩膜基板上》
10 , 如权利要求 8所述的液晶显示面板， 其中， 所述黑色矩阵及间隔
' : 1 一种液晶显示面板， 包括： 阵列基板、 与阵列基板贴合设置的彩 膜基板及设于阵列基板与彩膜基板之间的液晶层， 所述阵列基板包括： 玻 璃基板、 形成于玻璃基板上的柵极、 形成于柵极与玻璃基板上的柵极绝缘 层、 形成于 *极绝缘层上的氧化物半导体层、 形成于氧化物半导体层与柵 极绝缘层上的源 /漏极、 形成于氧化物半导体层、 源 /漏极与 *极绝缘层上 的保护层、 形成于保护层上的彩膜滤光片。 形成于彩膜滤光片与保护层上 的平坦化层及形成于平坦化层上的像素电极， 所述像素电极电性连接于所 述源 /漏极， 且该像素电极线状排布， 并围成一以 "十" 字结构为中心的发
' 其中， 所述氧化物半导体层对应源 /漏极之间设有凹槽， 所述保护层形 成于源 /漏极、 柵极绝缘层与凹槽上。
12、 如权利要求 11 所述的液晶显示面板， 其中， 所述氧化物半导体 层为铟镓锌氧化物层； 所述像素电极由纳米铟锡金属氧化物形成。
13、 如权利要求 11 所述的液晶显示面板， 还包括设于阵列基板与彩 膜基板之间的黑色矩阵及间隔物。
14, 如权利要求 13 所述的液晶显示面板， 其中， 所述黑色矩阵及间 隔物形成于彩膜基板上。
】5、 如权利要求 13 所述的液晶显示面板， 其中， 所述黑色矩阵及间 隔物形成于阵列基板上。
PCT/CN2014/070425 2013-12-27 2014-01-10 阵列基板及用该阵列基板的液晶显示面板 WO2015096222A1 (zh)

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