JP5383024B2 - 多層半導体パッケージ - Google Patents
多層半導体パッケージ Download PDFInfo
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- JP5383024B2 JP5383024B2 JP2007270800A JP2007270800A JP5383024B2 JP 5383024 B2 JP5383024 B2 JP 5383024B2 JP 2007270800 A JP2007270800 A JP 2007270800A JP 2007270800 A JP2007270800 A JP 2007270800A JP 5383024 B2 JP5383024 B2 JP 5383024B2
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
いくつかのさらなる実施形態では、半導体パッケージは、第1の外周によって画定される第1および第2の主要平坦表面を有する第1の基板であって、第2の主要平坦表面が、そこに結合された半導体ダイを有する第1の基板と、第2の外周によって画定される第1および第2の主要平坦表面からなる第2の基板であって、この第2の基板の第1の主要平坦表面が、1つまたは複数の垂直コネクタによって、第1の基板の第2の主要平坦表面に効果的に結合される第2の基板とを備え、垂直コネクタは、第1の外周および第2の外周内に実質的に配置され、第1の基板は第1の基板縁部を有し、ダイは第1の基板縁部を有し、第1のダイ縁部と、第1の基板縁部との間の水平距離は、約0.25mmから約1.5mmの間である。
(半導体パッケージの例示的実施形態)
図1は、半導体パッケージ100の一実施形態の平面図である。パッケージ100は、半導体ダイ120に対して、ダイ120(この図では点線で示される)およびベース基板130の上部などに効果的に配置されたインターポーザ基板110を備えることができる。いくつかの実施形態では、基板110と130とは、ほぼ同じ水平面積を有する。他の実施形態では、これらの基板は、かなり異なる水平面積を有してもよい。図1の実施形態は、基板110は、基板130よりも僅かに小さいものとして示す。インターポーザ基板110は、ダイ120またはベース基板130に電気的に結合させるための1つまたは複数のI/O端子140を備えることができ、これらの端子140は所望のように配置されることができる。
図5および6に示される垂直コネクタを用いたパッケージは、図7に示される垂直コネクタを用いたパッケージよりもコンパクトに構成されることができる。図5および6の垂直コネクタの実施形態は、図7の垂直コネクタの実施形態によって使用される対応するトレース(例えば、トレース756、758)よりも小さいトレース(例えば、図5のトレース556、558、および図6のトレース656、658)を使用するように構成されることができる。したがって、図5および6の垂直コネクタでは、所与の基板空間においてルーティング効率を改善し、それと同時に、ダイの縁部と、最も大きい基板(図5〜7の実施形態では、それぞれベース基板530、630、730である)の縁部との間の距離dをより短くすることが可能となる。距離dは、図5、6、および7では、それぞれd5、d6、およびd7によって示される。図示の実施形態では、d7>d5、およびd7>d6である。距離dは、垂直コネクタの幅とほぼ同じとすることができる。このため、パッケージングされたダイの水平方向寸法に近い寸法のパッケージが可能となる。
(開示の方法の例示的実施形態)
図8は、半導体パッケージの製造方法800の例示的な実施形態の流れ図である。ステップ810で、パッケージ部品が設けられる。これらの部品は、ベース基板、インターポーザ基板、半導体ダイ、および1つまたは複数の垂直コネクタを含み得る。ベース基板およびインターポーザ基板はどちらとも、上部表面と底部表面とを有する。いくつかの実施形態では、1つまたは複数の部品は、同時に、またはほぼ同時に設けられることができる。例えば、垂直コネクタとインターポーザ基板とは、同時に設けられることができる。ステップ820で、ダイは、インターポーザ基板の上部表面に電気的に結合される。
110、510、610、710 インターポーザ基板
112、132 上部表面
114、134 底部表面
120、420、520、620、720 半導体ダイ
122、170、522、622、722、750 はんだボール
124、136 縁部
130、430、530、630、730 ベース基板
140、142 I/O端子
150、152、154、156、550、650 垂直コネクタ
160 材料
180 電子部品
182 ボールグリッドアレイ(BGA)
190 領域
444、446 ボンドワイヤ
524、624、724 取付け層
552、652 導電ビード
554 リード
556、558、656、658、756、758 導電トレース
560、660、760 封入樹脂
654 スタッドバンプ
Claims (18)
- 第1の外周によって画定される第1および第2の主要平坦表面を有する第1の基板と、
前記第1の基板の前記第2の主要平坦表面に電気的に結合された第1の半導体ダイと、
第2の外周によって画定される第1および第2の主要平坦表面を有する第2の基板と、
前記第2の基板の前記第1の主要平坦表面を、前記第1の基板の前記第2の主要表面に電気的に結合させるように構成された第1の複数の垂直コネクタと、
前記第1の半導体ダイと、前記第1の基板の前記第2の主要表面との間に位置し、かつ、前記垂直コネクタの少なくともいくつかの少なくとも一部分を包含する第1の封入樹脂とを備え、
前記垂直コネクタが、前記第1の外周および第2の外周内に実質的に配置され、前記第2の基板の前記第2の主要平坦表面が、1つまたは複数の電子部品を受けるように実質的に利用可能であり、前記垂直コネクタと前記第2の基板の第2の外周との間の間隔が、前記垂直コネクタの幅より小さくなるように前記第2の外周の付近に前記垂直コネクタを配置し、
前記第1の基板が基板縁部を有し、前記第1の半導体ダイがダイ縁部を有し、前記ダイ縁部と、前記基板縁部との間の水平距離が、垂直コネクタの幅にほぼ等しい、半導体パッケージ。 - 前記第1の半導体ダイが、フリップチップ構成で、前記第1の基板の前記第2の主要平坦表面に電気的に結合される、請求項1に記載の半導体パッケージ。
- 前記第1の基板の前記第2の主要表面と、前記第2の基板の前記第1の主要表面との間に位置する第2の封入樹脂をさらに備える、請求項1に記載の半導体パッケージ。
- 前記第1の封入樹脂と、前記第2の封入樹脂とが、連続した樹脂材料を備える、請求項3に記載の半導体パッケージ。
- 前記第1の複数の垂直コネクタの少なくとも1つが、ボンド・オン・リード(BOL)接続を備える、請求項1に記載の半導体パッケージ。
- 前記第1の複数の垂直コネクタの1つの少なくとも一部分が、スタッドバンプを備える、請求項1に記載の半導体パッケージ。
- 前記第2の基板の前記第2の主要平坦表面が、電子部品を受けるように構成される、請求項1に記載の半導体パッケージ。
- 前記第2の基板の前記第2の主要平坦表面が、ボールグリッドアレイを受けるようにさらに構成され、前記ボールグリッドアレイの少なくとも一部分が、0.25mmから1.0mmの間のボールピッチを有する、請求項7に記載の半導体パッケージ。
- 前記第1の外周が、複数の外周側部を備え、前記第1の複数の垂直コネクタの少なくともいくつかが、前記外周側部の2つ以上に位置する、請求項1に記載の半導体パッケージ。
- 前記第1の複数の垂直コネクタの少なくともいくつかが、前記第1および第2の外周の少なくとも1つに沿って、概ね直径方向に対向する、請求項1に記載の半導体パッケージ。
- 前記ダイ縁部と前記基板縁部との間の水平距離が、0.25mmから1.5mmの間である、請求項1に記載の半導体パッケージ。
- 前記ダイ縁部と、前記基板縁部との間の前記水平距離が、0.25mmから1.0mmの間である、請求項11に記載の半導体パッケージ。
- 前記第1の基板に面した前記第1の半導体ダイの表面と、前記第2の基板の前記第1の主要平坦表面との間の垂直距離が、0.2mm未満である、請求項1に記載の半導体パッケージ。
- 第3の外周によって画定される第1および第2の主要平坦表面を有する第3の基板と、
前記第3の基板の前記第2の主要平坦表面に電気的に結合された第2の半導体ダイと、
前記第1の基板の前記第1の主要平坦表面を、前記第3の基板の前記第2の主要平坦表面に電気的に結合させるように構成された第2の複数の垂直コネクタとをさらに備える、
請求項1に記載の半導体パッケージ。 - 水平方向に所定の大きさを有する半導体ダイのための半導体パッケージであって、前記半導体パッケージは前記半導体ダイの水平方向の大きさと同等の水平方向の大きさを有し、
第1の外周によって画定される第1および第2の主要平坦表面を有する第1の基板であって、前記第2の主要平坦表面が、そこに結合された半導体ダイを有する第1の基板と、
第2の外周によって画定される第1および第2の主要平坦表面を有する第2の基板であって、前記第2の基板の前記第1の主要平坦表面が、1つまたは複数の垂直コネクタによって、前記第1の基板の前記第2の主要平坦表面に効果的に結合される第2の基板とを備え、
前記垂直コネクタが、前記第1の外周および前記第2の外周内に実質的に配置され、
前記第1の基板が基板縁部を有し、前記ダイがダイ縁部を有し、前記ダイ縁部と前記基板縁部との間の水平距離が、0.25mmから1.5mmの間であり、前記垂直コネクタと前記第2の基板の第2の外周との間の間隔が、前記垂直コネクタの幅より小さくなるように前記第2の外周の付近に前記垂直コネクタを配置した、半導体パッケージ。 - 第1の外周によって画定される第1および第2の主要平坦表面を有する第1の基板と、
前記第1の基板の前記第2の主要平坦表面に電気的に結合された半導体ダイと、
第2の外周によって画定される第1および第2の主要平坦表面を有し、前記第2の主要平坦表面が前記第1の主要平坦表面上の端子に電気的に結合される端子を有する第2の基板と、
前記第2の基板の前記第1の主要平坦表面を前記第1の基板の前記第2の主要平坦表面に電気的に結合するように構成される複数の垂直コネクタと、
前記半導体ダイと、前記第1の基板の前記第2の主要平坦表面との間に位置し、前記垂直コネクタの少なくともいくつかの少なくとも一部分を包含する封入樹脂とを備え、
前記垂直コネクタは、前記第1の外周および前記第2の外周内に実質的に配置され、前記第2の基板の前記第2の主要平坦表面が、1つまたは複数の電子部品を受けるように実質的に利用可能であり、前記垂直コネクタと前記第2の基板の第2の外周との間の間隔が、前記垂直コネクタの幅より小さくなるように前記第2の外周の付近に前記垂直コネクタを配置した、半導体パッケージ。 - 前記第2の基板の前記第2の主要平坦表面の端子は、個別の部品を受けるように構成される、請求項16に記載の半導体パッケージ。
- 前記第1の基板が基板縁部を有し、前記半導体ダイがダイ縁部を有し、前記ダイ縁部と前記基板縁部との間の水平距離が、0.25mmから1.5mmの間である、請求項16に記載の半導体パッケージ。
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US7994626B2 (en) | 2011-08-09 |
JP5620956B2 (ja) | 2014-11-05 |
KR101517541B1 (ko) | 2015-05-04 |
TWI366910B (en) | 2012-06-21 |
TW200828563A (en) | 2008-07-01 |
US20100007002A1 (en) | 2010-01-14 |
US7608921B2 (en) | 2009-10-27 |
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