JP2006114604A - 半導体装置及びその組立方法 - Google Patents
半導体装置及びその組立方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 186
- 239000011347 resin Substances 0.000 claims abstract description 118
- 229920005989 resin Polymers 0.000 claims abstract description 118
- 238000007789 sealing Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 16
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims 2
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- 239000010410 layer Substances 0.000 description 89
- 239000004593 Epoxy Substances 0.000 description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000004382 potting Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
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- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
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- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
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- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
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- H01L2924/151—Die mounting substrate
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- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
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Abstract
【課題】 複数の半導体装置同士の位置ズレを制御でき、高精度で容易に組立可能な半導体装置及びその組立方法を提供する。
【解決手段】 ベース基板1と、ベース基板1上の第1固定樹脂層8と、前記第1固定樹脂層8上の第1半導体チップ14と、前記第1半導体チップ14の上方の第1基板10と、前記第1半導体チップ14から離間し、前記第1基板10と前記ベース基板1とを電気的に接続する複数の第1接続ボール5c,5m,6c,6m,7c,7mと、前記第1接続ボール5c,5m,6c,6m,7c,7mの周囲の第1基板封止樹脂層9とを備える。
【選択図】 図1
Description
本発明の第1の実施の形態に係る半導体装置は、図1(a)に示すように、ベース基板1と、ベース基板1上の第1固定樹脂層8と、第1固定樹脂層8上の第1半導体チップ14と、第1半導体チップ14の上方の第1基板10と、第1半導体チップ14から離間し、第1基板10とベース基板1とを電気的に接続する複数の第1接続ボール(第1下部接続ボール5c,5m、第1中間接続ボール6c,6m、第1上部接続ボール7c,7m)と、第1接続ボールの周囲の第1基板封止樹脂層9とを備える。
ベース基板1の上方に積層する第1基板10として、上下面を貫通するビアプラグ11c,11mが形成された第1基板10を準備する。第1基板10の下面には、第1チップ接続電極13a,13b,13c,13dを介して第1半導体チップ14を搭載する。第1チップ接続電極13a,13b,13c,13dの周囲には、エポキシ系又はアクリル系の有機樹脂からなる第1チップ封止樹脂層12を配置する。
第1の実施の形態の第1の変形例に係る半導体装置は、図4に示すように、ベース基板1と第1基板10とを接続する端子として、第1下部接続バンプ105c,105m、第1中間接続バンプ106c,106m、第1上部接続バンプ107c,107mが配置される点が、図1に示す半導体装置と異なる。第1下部接続バンプ105c,105m、第1中間接続バンプ106c,106m、第1上部接続バンプ107c,107mとしては、金(Au)等の金属製の突起電極(スタッドバンプ)が好適である。ベース基板1と第1基板10の導通は、第1下部接続バンプ105c,105m、第1中間接続バンプ106c,106m、第1上部接続バンプ107c,107mに超音波振動等の物理的振動を与えることにより行うことができる。
本発明の第2の実施の形態に係る半導体装置は、図5に示すように、第1基板10上に複数の半導体チップ(第2半導体チップ24,・・・,第k半導体チップ54)が積層される点が、図1に示す半導体装置と異なる。
上記のように、本発明は第1及び第2の実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
5c,5m…第1下部接続ボール
6c,6m…第1中間接続ボール
7c,7m…第1上部接続ボール
8…第1固定樹脂層
9…第1基板封止樹脂層
10…第1基板
12…第1チップ封止樹脂層
14…第1半導体チップ
15c,15m…第2下部接続ボール
16c,16m…第2中間接続ボール
17c,17m…第2上部接続ボール
20…第2基板
22…第2チップ封止樹脂層
23a…第2チップ接続電極
24…第2半導体チップ
28…第2固定樹脂層
29…第2基板封止樹脂層
40…第k−1基板
45c,45m…第k下部接続ボール
46c,46m…第k中間接続ボール
47c,47m…第k上部接続ボール
48…第k固定樹脂層
50…第k基板
52…第kチップ封止樹脂層
54…第k半導体チップ
58…第k固定樹脂層
59…第k基板封止樹脂層
Claims (5)
- ベース基板と、
前記ベース基板上の第1固定樹脂層と、
前記第1固定樹脂層上の第1半導体チップと、
前記第1半導体チップの上方の第1基板と、
前記第1半導体チップから離間し、前記第1基板と前記ベース基板とを電気的に接続する複数の第1接続ボールと、
前記第1接続ボールの周囲の第1基板封止樹脂層
とを備えることを特徴とする半導体装置。 - 前記第1基板上の第2固定樹脂層と、
前記第2固定樹脂層上の第2半導体チップと、
前記第2半導体チップの上方の第2基板と、
前記第2半導体チップから離間し、前記第2基板と前記第1基板とを電気的に接続する複数の第2接続ボールと、
前記第2接続ボールの周囲の第2基板封止樹脂層
とを更に有することを特徴とする請求項1に記載の半導体装置。 - 前記第1固定樹脂層及び前記第1基板封止樹脂層は、エポキシ系樹脂及びアクリル系樹脂のいずれかから選ばれる材料を含むことを特徴とする請求項1に記載の半導体装置。
- ベース基板上に第1固定樹脂層を配置するステップと、
前記ベース基板上に半導体チップを下面に有する第1基板を対向させ、前記第1固定樹脂層上に前記半導体チップを固定するステップと、
前記第1基板と前記ベース基板との間に、前記第1基板と前記ベース基板とを電気的に接続する複数の第1接続ボールを配置するステップと、
前記第1接続ボールの周囲に第1基板封止樹脂層を配置するステップ
とを含むことを特徴とする半導体装置の組立方法。 - 前記第1固定樹脂層及び前記第1基板封止樹脂層は、エポキシ系樹脂及びアクリル系樹脂のいずれかから選ばれる材料を含むことを特徴とする請求項4に記載の半導体装置の組立方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2004298740A JP2006114604A (ja) | 2004-10-13 | 2004-10-13 | 半導体装置及びその組立方法 |
TW094134980A TWI294657B (en) | 2004-10-13 | 2005-10-06 | Semiconductor device and method of assembling semiconductor device |
US11/246,150 US7276784B2 (en) | 2004-10-13 | 2005-10-11 | Semiconductor device and a method of assembling a semiconductor device |
KR1020050095935A KR100730255B1 (ko) | 2004-10-13 | 2005-10-12 | 반도체 장치 및 반도체 장치의 조립 방법 |
CNA2005101083905A CN1763942A (zh) | 2004-10-13 | 2005-10-13 | 半导体器件及半导体器件的组装方法 |
US11/826,858 US20070292989A1 (en) | 2004-10-13 | 2007-07-19 | Semiconductor device and a method of assembling a semiconductor device |
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Application Number | Priority Date | Filing Date | Title |
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JP2004298740A JP2006114604A (ja) | 2004-10-13 | 2004-10-13 | 半導体装置及びその組立方法 |
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JP2006114604A true JP2006114604A (ja) | 2006-04-27 |
Family
ID=36145871
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Application Number | Title | Priority Date | Filing Date |
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JP2004298740A Pending JP2006114604A (ja) | 2004-10-13 | 2004-10-13 | 半導体装置及びその組立方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7276784B2 (ja) |
JP (1) | JP2006114604A (ja) |
KR (1) | KR100730255B1 (ja) |
CN (1) | CN1763942A (ja) |
TW (1) | TWI294657B (ja) |
Cited By (4)
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JP2008147628A (ja) * | 2006-12-07 | 2008-06-26 | Stats Chippac Inc | 多層半導体パッケージ |
JP2009004650A (ja) * | 2007-06-22 | 2009-01-08 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2012134572A (ja) * | 2012-04-12 | 2012-07-12 | Lapis Semiconductor Co Ltd | 半導体装置 |
JP2016529703A (ja) * | 2013-07-15 | 2016-09-23 | インヴェンサス・コーポレイション | 封止を貫いて延在する接続子によって結合された積重端子を有する超小型電子組立体 |
Families Citing this family (14)
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JP2006114604A (ja) * | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体装置及びその組立方法 |
WO2006109857A1 (ja) * | 2005-04-11 | 2006-10-19 | Elpida Memory, Inc. | 半導体装置 |
US7545031B2 (en) * | 2005-04-11 | 2009-06-09 | Stats Chippac Ltd. | Multipackage module having stacked packages with asymmetrically arranged die and molding |
US7768113B2 (en) * | 2005-05-26 | 2010-08-03 | Volkan Ozguz | Stackable tier structure comprising prefabricated high density feedthrough |
US7919844B2 (en) | 2005-05-26 | 2011-04-05 | Aprolase Development Co., Llc | Tier structure with tier frame having a feedthrough structure |
JP5116268B2 (ja) * | 2005-08-31 | 2013-01-09 | キヤノン株式会社 | 積層型半導体装置およびその製造方法 |
KR100652440B1 (ko) * | 2005-10-27 | 2006-12-01 | 삼성전자주식회사 | 반도체 패키지, 그 패키지를 이용한 스택 패키지 및 그스택 패키지 형성 방법 |
JP4528715B2 (ja) * | 2005-11-25 | 2010-08-18 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20070202680A1 (en) * | 2006-02-28 | 2007-08-30 | Aminuddin Ismail | Semiconductor packaging method |
DE102006037538B4 (de) * | 2006-08-10 | 2016-03-10 | Infineon Technologies Ag | Elektronisches Bauteil, elektronischer Bauteilstapel und Verfahren zu deren Herstellung sowie Verwendung einer Kügelchenplatziermaschine zur Durchführung eines Verfahrens zum Herstellen eines elektronischen Bauteils bzw. Bauteilstapels |
FR2939963B1 (fr) * | 2008-12-11 | 2011-08-05 | St Microelectronics Grenoble | Procede de fabrication d'un support de composant semi-conducteur, support et dispositif semi-conducteur |
JP5789431B2 (ja) * | 2011-06-30 | 2015-10-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9455353B2 (en) * | 2012-07-31 | 2016-09-27 | Robert Bosch Gmbh | Substrate with multiple encapsulated devices |
JP2020145351A (ja) * | 2019-03-07 | 2020-09-10 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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JPH10294423A (ja) * | 1997-04-17 | 1998-11-04 | Nec Corp | 半導体装置 |
JPH11103158A (ja) | 1997-09-26 | 1999-04-13 | Olympus Optical Co Ltd | プリント配線板へのフリップチップ実装方法および実装構造 |
US6451624B1 (en) * | 1998-06-05 | 2002-09-17 | Micron Technology, Inc. | Stackable semiconductor package having conductive layer and insulating layers and method of fabrication |
US6313522B1 (en) * | 1998-08-28 | 2001-11-06 | Micron Technology, Inc. | Semiconductor structure having stacked semiconductor devices |
JP2000286380A (ja) | 1999-03-30 | 2000-10-13 | Nec Corp | 半導体の実装構造および製造方法 |
TW472330B (en) * | 1999-08-26 | 2002-01-11 | Toshiba Corp | Semiconductor device and the manufacturing method thereof |
JP3999945B2 (ja) * | 2001-05-18 | 2007-10-31 | 株式会社東芝 | 半導体装置の製造方法 |
JP2003007972A (ja) | 2001-06-27 | 2003-01-10 | Toshiba Corp | 積層型半導体装置及びその製造方法 |
JP2004047702A (ja) | 2002-07-11 | 2004-02-12 | Toshiba Corp | 半導体装置積層モジュール |
JP2006114604A (ja) * | 2004-10-13 | 2006-04-27 | Toshiba Corp | 半導体装置及びその組立方法 |
-
2004
- 2004-10-13 JP JP2004298740A patent/JP2006114604A/ja active Pending
-
2005
- 2005-10-06 TW TW094134980A patent/TWI294657B/zh not_active IP Right Cessation
- 2005-10-11 US US11/246,150 patent/US7276784B2/en not_active Expired - Fee Related
- 2005-10-12 KR KR1020050095935A patent/KR100730255B1/ko not_active IP Right Cessation
- 2005-10-13 CN CNA2005101083905A patent/CN1763942A/zh active Pending
-
2007
- 2007-07-19 US US11/826,858 patent/US20070292989A1/en not_active Abandoned
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008147628A (ja) * | 2006-12-07 | 2008-06-26 | Stats Chippac Inc | 多層半導体パッケージ |
JP2012235170A (ja) * | 2006-12-07 | 2012-11-29 | Stats Chippac Inc | 多層半導体パッケージ |
JP2009004650A (ja) * | 2007-06-22 | 2009-01-08 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US8659151B2 (en) | 2007-06-22 | 2014-02-25 | Lapis Semiconductor Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2012134572A (ja) * | 2012-04-12 | 2012-07-12 | Lapis Semiconductor Co Ltd | 半導体装置 |
JP2016529703A (ja) * | 2013-07-15 | 2016-09-23 | インヴェンサス・コーポレイション | 封止を貫いて延在する接続子によって結合された積重端子を有する超小型電子組立体 |
Also Published As
Publication number | Publication date |
---|---|
TW200620511A (en) | 2006-06-16 |
KR20060052210A (ko) | 2006-05-19 |
CN1763942A (zh) | 2006-04-26 |
US20060079020A1 (en) | 2006-04-13 |
US20070292989A1 (en) | 2007-12-20 |
KR100730255B1 (ko) | 2007-06-20 |
US7276784B2 (en) | 2007-10-02 |
TWI294657B (en) | 2008-03-11 |
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