JP5348874B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5348874B2
JP5348874B2 JP2007313006A JP2007313006A JP5348874B2 JP 5348874 B2 JP5348874 B2 JP 5348874B2 JP 2007313006 A JP2007313006 A JP 2007313006A JP 2007313006 A JP2007313006 A JP 2007313006A JP 5348874 B2 JP5348874 B2 JP 5348874B2
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Japan
Prior art keywords
insulating layer
layer
silicon layer
silicon
region
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Expired - Fee Related
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JP2007313006A
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English (en)
Japanese (ja)
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JP2008166744A5 (enExample
JP2008166744A (ja
Inventor
舜平 山崎
佳寿子 池田
慎也 笹川
英臣 須沢
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007313006A priority Critical patent/JP5348874B2/ja
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Publication of JP2008166744A5 publication Critical patent/JP2008166744A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007313006A 2006-12-05 2007-12-04 半導体装置及びその作製方法 Expired - Fee Related JP5348874B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007313006A JP5348874B2 (ja) 2006-12-05 2007-12-04 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006327921 2006-12-05
JP2006327921 2006-12-05
JP2007313006A JP5348874B2 (ja) 2006-12-05 2007-12-04 半導体装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013170390A Division JP5685297B2 (ja) 2006-12-05 2013-08-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2008166744A JP2008166744A (ja) 2008-07-17
JP2008166744A5 JP2008166744A5 (enExample) 2011-01-13
JP5348874B2 true JP5348874B2 (ja) 2013-11-20

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007313006A Expired - Fee Related JP5348874B2 (ja) 2006-12-05 2007-12-04 半導体装置及びその作製方法
JP2013170390A Active JP5685297B2 (ja) 2006-12-05 2013-08-20 半導体装置
JP2015006617A Expired - Fee Related JP5973598B2 (ja) 2006-12-05 2015-01-16 半導体装置の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013170390A Active JP5685297B2 (ja) 2006-12-05 2013-08-20 半導体装置
JP2015006617A Expired - Fee Related JP5973598B2 (ja) 2006-12-05 2015-01-16 半導体装置の作製方法

Country Status (4)

Country Link
US (2) US7968884B2 (enExample)
JP (3) JP5348874B2 (enExample)
KR (1) KR20080052428A (enExample)
CN (1) CN101197394B (enExample)

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JP5374805B2 (ja) * 2006-03-27 2013-12-25 株式会社Ｓｕｍｃｏ Ｓｉｍｏｘウェーハの製造方法
JP5500771B2 (ja) * 2006-12-05 2014-05-21 株式会社半導体エネルギー研究所 半導体装置及びマイクロプロセッサ
TWI418036B (zh) * 2006-12-05 2013-12-01 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5337380B2 (ja) * 2007-01-26 2013-11-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7947981B2 (en) * 2007-01-30 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US7936009B2 (en) * 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
WO2010029865A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102577885B1 (ko) 2009-10-16 2023-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952458B2 (en) * 2011-04-14 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer
KR101771726B1 (ko) * 2012-06-18 2017-08-25 삼성전기주식회사 정전기 방지 소자 및 이를 포함하는 복합 전자 부품
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US9356045B2 (en) * 2013-06-10 2016-05-31 Raytheon Company Semiconductor structure having column III-V isolation regions
WO2017149584A1 (ja) 2016-02-29 2017-09-08 川澄化学工業株式会社 癒着防止材
KR101925945B1 (ko) * 2017-02-28 2018-12-06 서울시립대학교 산학협력단 테이퍼 형상의 빔을 가진 릴레이 소자의 제조 방법 및 테이퍼 형상의 빔을 가진 릴레이 소자
CN110880520B (zh) * 2018-09-06 2024-11-29 松下知识产权经营株式会社 摄像装置
CN109860279B (zh) * 2019-01-24 2022-03-18 南京京东方显示技术有限公司 一种薄膜晶体管及其修复方法
CN114758366B (zh) * 2021-01-12 2025-12-09 群创光电股份有限公司 感测装置

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Also Published As

Publication number Publication date
JP5973598B2 (ja) 2016-08-23
CN101197394B (zh) 2012-07-04
JP5685297B2 (ja) 2015-03-18
JP2015073138A (ja) 2015-04-16
CN101197394A (zh) 2008-06-11
JP2008166744A (ja) 2008-07-17
JP2013254980A (ja) 2013-12-19
US20110254004A1 (en) 2011-10-20
US7968884B2 (en) 2011-06-28
KR20080052428A (ko) 2008-06-11
US20080128808A1 (en) 2008-06-05

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