JP5208099B2 - 流量センサとその製造方法、及び流量センサモジュール - Google Patents

流量センサとその製造方法、及び流量センサモジュール Download PDF

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Publication number
JP5208099B2
JP5208099B2 JP2009282085A JP2009282085A JP5208099B2 JP 5208099 B2 JP5208099 B2 JP 5208099B2 JP 2009282085 A JP2009282085 A JP 2009282085A JP 2009282085 A JP2009282085 A JP 2009282085A JP 5208099 B2 JP5208099 B2 JP 5208099B2
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semiconductor element
lead frame
flow rate
air flow
mold
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JP2009282085A
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Japanese (ja)
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JP2011122984A (ja
JP2011122984A5 (enExample
Inventor
務 河野
裕樹 岡本
毅 森野
恵二 半沢
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Priority to JP2009282085A priority Critical patent/JP5208099B2/ja
Priority to CN201010589428.6A priority patent/CN102162744B/zh
Priority to CN201310729123.4A priority patent/CN103791956B/zh
Priority to EP19209512.3A priority patent/EP3660470B1/en
Priority to EP10252092A priority patent/EP2339302A3/en
Priority to US12/964,935 priority patent/US8969977B2/en
Publication of JP2011122984A publication Critical patent/JP2011122984A/ja
Publication of JP2011122984A5 publication Critical patent/JP2011122984A5/ja
Application granted granted Critical
Publication of JP5208099B2 publication Critical patent/JP5208099B2/ja
Priority to US14/604,792 priority patent/US9846067B2/en
Priority to US15/814,036 priority patent/US10921169B2/en
Priority to US17/130,247 priority patent/US11629988B2/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F15/00Details of, or accessories for, apparatus of groups G01F1/00 - G01F13/00 insofar as such details or appliances are not adapted to particular types of such apparatus
    • G01F15/16Diaphragms; Bellows; Mountings therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6842Structural arrangements; Mounting of elements, e.g. in relation to fluid flow with means for influencing the fluid flow
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/688Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
    • G01F1/69Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
    • G01F1/692Thin-film arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50Devices controlled by mechanical forces, e.g. pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Measuring Volume Flow (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
JP2009282085A 2009-12-11 2009-12-11 流量センサとその製造方法、及び流量センサモジュール Active JP5208099B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2009282085A JP5208099B2 (ja) 2009-12-11 2009-12-11 流量センサとその製造方法、及び流量センサモジュール
CN201010589428.6A CN102162744B (zh) 2009-12-11 2010-12-09 流量传感器及其制造方法以及流量传感器组件
CN201310729123.4A CN103791956B (zh) 2009-12-11 2010-12-09 流量传感器及其制造方法以及流量传感器组件
EP19209512.3A EP3660470B1 (en) 2009-12-11 2010-12-10 Flow sensor and method for manufacturing flow sensor
EP10252092A EP2339302A3 (en) 2009-12-11 2010-12-10 Flow sensor, method for manufacturing flow sensor and flow sensor module
US12/964,935 US8969977B2 (en) 2009-12-11 2010-12-10 Flow sensor, method for manufacturing flow sensor and flow sensor module
US14/604,792 US9846067B2 (en) 2009-12-11 2015-01-26 Flow sensor, method for manufacturing flow sensor and flow sensor module
US15/814,036 US10921169B2 (en) 2009-12-11 2017-11-15 Flow sensor, method for manufacturing flow sensor and flow sensor module
US17/130,247 US11629988B2 (en) 2009-12-11 2020-12-22 Flow sensor, method for manufacturing flow sensor and flow sensor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009282085A JP5208099B2 (ja) 2009-12-11 2009-12-11 流量センサとその製造方法、及び流量センサモジュール

Related Child Applications (1)

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JP2012230955A Division JP2013050458A (ja) 2012-10-18 2012-10-18 流量センサとその製造方法、及び流量センサモジュール

Publications (3)

Publication Number Publication Date
JP2011122984A JP2011122984A (ja) 2011-06-23
JP2011122984A5 JP2011122984A5 (enExample) 2012-02-02
JP5208099B2 true JP5208099B2 (ja) 2013-06-12

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Country Status (4)

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US (4) US8969977B2 (enExample)
EP (2) EP2339302A3 (enExample)
JP (1) JP5208099B2 (enExample)
CN (2) CN103791956B (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014001992A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014001959A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014001956A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014001990A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014001929A (ja) * 2012-06-15 2014-01-09 Hitachi Automotive Systems Ltd 熱式流量計
JP2014185865A (ja) * 2013-03-21 2014-10-02 Hitachi Automotive Systems Ltd 熱式流量計
JP2015042991A (ja) * 2014-11-04 2015-03-05 日立オートモティブシステムズ株式会社 熱式流量計
JP2015180896A (ja) * 2015-06-24 2015-10-15 日立オートモティブシステムズ株式会社 流量計
JP2017102133A (ja) * 2017-03-14 2017-06-08 日立オートモティブシステムズ株式会社 流量センサとその製造方法、及び流量センサモジュール
JP2017181521A (ja) * 2017-06-07 2017-10-05 株式会社デンソー 流量センサ
JP2018119990A (ja) * 2018-05-09 2018-08-02 日立オートモティブシステムズ株式会社 熱式流量計
JP2019039935A (ja) * 2018-12-14 2019-03-14 日立オートモティブシステムズ株式会社 熱式流量計
JP2019174490A (ja) * 2019-07-19 2019-10-10 日立オートモティブシステムズ株式会社 熱式流量計

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WO2013084259A1 (ja) 2011-12-07 2013-06-13 日立オートモティブシステムズ株式会社 空気流量測定装置
JP5743871B2 (ja) * 2011-12-07 2015-07-01 日立オートモティブシステムズ株式会社 熱式流量計
US9599496B2 (en) * 2012-01-10 2017-03-21 Hitachi Automotive Systems, Ltd. Flow rate measuring device with first temperature sensor in a main passage and second temperature sensor in a sub-passage
JP5743922B2 (ja) * 2012-02-21 2015-07-01 日立オートモティブシステムズ株式会社 熱式空気流量測定装置
JP5763575B2 (ja) * 2012-03-19 2015-08-12 日立オートモティブシステムズ株式会社 流量センサおよびその製造方法
JP5710538B2 (ja) * 2012-04-06 2015-04-30 日立オートモティブシステムズ株式会社 流量センサ
JP5965706B2 (ja) 2012-04-12 2016-08-10 日立オートモティブシステムズ株式会社 流量センサの製造方法
JP5675706B2 (ja) 2012-06-15 2015-02-25 日立オートモティブシステムズ株式会社 熱式流量計
US9778086B2 (en) * 2012-06-15 2017-10-03 Hitachi Automotive Systems, Ltd. Flow sensor with a housing that accommodates an auxiliary channel having an opening into which a fluid to be measured is taken
JP5759942B2 (ja) * 2012-06-15 2015-08-05 日立オートモティブシステムズ株式会社 熱式流量計
MX339283B (es) 2012-06-15 2016-05-10 Hitachi Automotive Systems Ltd Medidor de flujo térmico.
JP5632881B2 (ja) * 2012-06-15 2014-11-26 日立オートモティブシステムズ株式会社 熱式流量計
JP5932508B2 (ja) 2012-06-15 2016-06-08 日立オートモティブシステムズ株式会社 熱式流量計およびその製造方法
JP5648021B2 (ja) 2012-06-29 2015-01-07 日立オートモティブシステムズ株式会社 熱式空気流量センサ
JP5675716B2 (ja) * 2012-06-29 2015-02-25 日立オートモティブシステムズ株式会社 熱式空気流量センサ
JP5974774B2 (ja) * 2012-09-25 2016-08-23 株式会社デンソー センサ装置の製造方法
JP6102263B2 (ja) * 2013-01-08 2017-03-29 株式会社デンソー 半導体装置の製造方法
JP5916637B2 (ja) 2013-01-11 2016-05-11 日立オートモティブシステムズ株式会社 流量センサおよびその製造方法
JP6011373B2 (ja) * 2013-01-31 2016-10-19 株式会社デンソー 半導体装置の製造方法
JP5904959B2 (ja) * 2013-03-08 2016-04-20 日立オートモティブシステムズ株式会社 熱式空気流量計
JP6118150B2 (ja) * 2013-03-21 2017-04-19 日立オートモティブシステムズ株式会社 熱式流量計
JP6032096B2 (ja) * 2013-03-28 2016-11-24 株式会社デンソー 電子制御ユニット及びその製造方法
JP6096070B2 (ja) 2013-06-20 2017-03-15 日立オートモティブシステムズ株式会社 熱式流量計の製造方法
EP3064906A4 (en) * 2013-10-31 2017-03-08 Hitachi Automotive Systems, Ltd. Airflow measurement device
CN103954306B (zh) * 2014-04-15 2016-03-23 无锡市星翼仪表科技有限公司 小型化高精度微量程传感器及流量计
EP3176543B1 (en) * 2014-07-30 2020-11-18 Hitachi Automotive Systems, Ltd. Circuit board mounting structure and sensor using same
JP2016090413A (ja) * 2014-11-06 2016-05-23 日立オートモティブシステムズ株式会社 熱式空気流量計
WO2016084664A1 (ja) * 2014-11-28 2016-06-02 日立オートモティブシステムズ株式会社 熱式流量センサ
JP2016194465A (ja) * 2015-04-01 2016-11-17 日立オートモティブシステムズ株式会社 物理量検出素子
JP6043833B2 (ja) * 2015-04-27 2016-12-14 日立オートモティブシステムズ株式会社 熱式流量計
JP6045644B2 (ja) * 2015-06-11 2016-12-14 日立オートモティブシステムズ株式会社 流量センサおよびその製造方法
CN107615015B (zh) * 2015-09-30 2020-01-03 日立汽车系统株式会社 树脂成形体及传感器装置
DE102015225358B4 (de) * 2015-12-16 2020-04-02 Continental Automotive Gmbh Luftmassenmesser
WO2019021766A1 (ja) * 2017-07-24 2019-01-31 株式会社デンソー 半導体装置及び半導体装置の製造方法
JP6780675B2 (ja) * 2017-07-24 2020-11-04 株式会社デンソー 半導体装置及び半導体装置の製造方法
JP6458104B2 (ja) * 2017-09-11 2019-01-23 日立オートモティブシステムズ株式会社 熱式流量計
DE102017218893A1 (de) * 2017-10-23 2019-04-25 Robert Bosch Gmbh Sensoranordnung zur Bestimmung wenigstens eines Parameters eines durch einen Messkanal strömenden fluiden Mediums
JP6793107B2 (ja) * 2017-11-27 2020-12-02 日立オートモティブシステムズ株式会社 流量計
JP6838227B2 (ja) * 2018-03-09 2021-03-03 日立Astemo株式会社 物理量測定装置
JP2020016465A (ja) * 2018-07-23 2020-01-30 ミネベアミツミ株式会社 流体センサ
DE112019004779B4 (de) * 2018-11-05 2025-10-09 Hitachi Astemo, Ltd. Positionierungs- und befestigungsaufbau für ein chipmodul
CN113490836B (zh) * 2019-03-04 2024-12-17 日立安斯泰莫株式会社 物理量检测装置
JP7162961B2 (ja) * 2019-03-04 2022-10-31 日立Astemo株式会社 流量測定装置
JP7317103B2 (ja) * 2019-03-29 2023-07-28 日立Astemo株式会社 物理量測定装置
JP6775629B2 (ja) * 2019-04-23 2020-10-28 日立オートモティブシステムズ株式会社 物理量検出素子
JP7112001B2 (ja) * 2020-10-15 2022-08-03 ダイキン工業株式会社 熱式流速・流量センサ、及び空気調和機
US11879790B2 (en) 2021-10-28 2024-01-23 Texas Instruments Incorporated Isolated temperature sensor package with embedded spacer in dielectric opening

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