JP5085997B2 - プラズマエッチング性能強化方法及び装置 - Google Patents

プラズマエッチング性能強化方法及び装置 Download PDF

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JP5085997B2
JP5085997B2 JP2007214211A JP2007214211A JP5085997B2 JP 5085997 B2 JP5085997 B2 JP 5085997B2 JP 2007214211 A JP2007214211 A JP 2007214211A JP 2007214211 A JP2007214211 A JP 2007214211A JP 5085997 B2 JP5085997 B2 JP 5085997B2
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etching
gas
silicon
feature
forming
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JP2008060566A (ja
JP2008060566A5 (https=
Inventor
ビン・ジ
エリック・エー．・エデルバーグ
匠 柳川
ジソング・フアン
ルーミン・リ
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Lam Research Corp
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Lam Research Corp
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Priority claimed from US11/508,725 external-priority patent/US7977390B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Drying Of Semiconductors (AREA)
JP2007214211A 2006-08-22 2007-08-21 プラズマエッチング性能強化方法及び装置 Active JP5085997B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/508,725 US7977390B2 (en) 2002-10-11 2006-08-22 Method for plasma etching performance enhancement
US11/508,725 2006-08-22

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JP2008060566A JP2008060566A (ja) 2008-03-13
JP2008060566A5 JP2008060566A5 (https=) 2010-09-24
JP5085997B2 true JP5085997B2 (ja) 2012-11-28

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JP2007214211A Active JP5085997B2 (ja) 2006-08-22 2007-08-21 プラズマエッチング性能強化方法及び装置

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JP (1) JP5085997B2 (https=)
KR (1) KR101468213B1 (https=)
CN (1) CN101131927A (https=)
MY (1) MY148830A (https=)
SG (1) SG140538A1 (https=)
TW (1) TWI453814B (https=)

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JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
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JP6001940B2 (ja) * 2012-07-11 2016-10-05 東京エレクトロン株式会社 パターン形成方法及び基板処理システム
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
JP2014225501A (ja) 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN104616956B (zh) * 2013-11-05 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀设备及方法
JP6331452B2 (ja) * 2014-02-19 2018-05-30 愛知製鋼株式会社 有機膜のエッチング方法
JP6549765B2 (ja) * 2014-06-16 2019-07-24 東京エレクトロン株式会社 処理方法
JP6373150B2 (ja) 2014-06-16 2018-08-15 東京エレクトロン株式会社 基板処理システム及び基板処理方法
CN105336665B (zh) * 2014-06-19 2019-01-29 中芯国际集成电路制造(上海)有限公司 基于超低k电介质的互连结构的制造方法及制造的产品
JP2017098478A (ja) 2015-11-27 2017-06-01 東京エレクトロン株式会社 エッチング方法
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JP6584339B2 (ja) * 2016-02-10 2019-10-02 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法
JP6784530B2 (ja) * 2016-03-29 2020-11-11 東京エレクトロン株式会社 被処理体を処理する方法
WO2017170411A1 (ja) 2016-03-29 2017-10-05 東京エレクトロン株式会社 被処理体を処理する方法
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
KR102362462B1 (ko) 2016-03-29 2022-02-14 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
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CN106856163A (zh) * 2016-11-22 2017-06-16 上海华力微电子有限公司 一种高深宽比图形结构的形成方法
KR102312245B1 (ko) * 2016-12-02 2021-10-13 에이에스엠엘 네델란즈 비.브이. 에치 파라미터를 변화시키는 방법
JP6415636B2 (ja) * 2017-05-25 2018-10-31 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP7037384B2 (ja) * 2018-02-19 2022-03-16 キオクシア株式会社 半導体装置の製造方法
JP2020064924A (ja) * 2018-10-16 2020-04-23 東京エレクトロン株式会社 窒化膜の成膜方法および半導体装置の製造方法
US11640909B2 (en) * 2018-12-14 2023-05-02 Applied Materials, Inc. Techniques and apparatus for unidirectional hole elongation using angled ion beams
JP7174634B2 (ja) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 膜をエッチングする方法
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
JP7235864B2 (ja) * 2019-02-11 2023-03-08 長江存儲科技有限責任公司 保護層のｉｎ－ｓｉｔｕ形成を伴う新規のエッチング処理
KR102904323B1 (ko) 2019-02-27 2025-12-24 램 리써치 코포레이션 희생 층을 사용한 반도체 마스크 재성형
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
US11043394B1 (en) 2019-12-18 2021-06-22 Applied Materials, Inc. Techniques and apparatus for selective shaping of mask features using angled beams
JP7390199B2 (ja) * 2020-01-29 2023-12-01 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
JP7577012B2 (ja) 2021-03-26 2024-11-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7320554B2 (ja) * 2021-04-27 2023-08-03 株式会社アルバック エッチング方法
WO2023166613A1 (ja) * 2022-03-02 2023-09-07 株式会社日立ハイテク プラズマ処理方法
TW202431406A (zh) 2022-09-22 2024-08-01 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
CN115513051B (zh) * 2022-11-04 2023-02-10 合肥晶合集成电路股份有限公司 硬掩模层返工方法及dmos形成方法

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US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
JPH08195380A (ja) * 1995-01-13 1996-07-30 Sony Corp コンタクトホールの形成方法
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US7169701B2 (en) * 2004-06-30 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene trench formation to avoid low-K dielectric damage
TWI255502B (en) * 2005-01-19 2006-05-21 Promos Technologies Inc Method for preparing structure with high aspect ratio

Also Published As

Publication number Publication date
TW200818313A (en) 2008-04-16
TWI453814B (zh) 2014-09-21
KR20080018110A (ko) 2008-02-27
SG140538A1 (en) 2008-03-28
JP2008060566A (ja) 2008-03-13
CN101131927A (zh) 2008-02-27
KR101468213B1 (ko) 2014-12-03
MY148830A (en) 2013-06-14

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