JP7037384B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 113
- 239000002184 metal Substances 0.000 claims description 113
- 238000000034 method Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 22
- 238000011282 treatment Methods 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 description 298
- 239000010408 film Substances 0.000 description 95
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Drying Of Semiconductors (AREA)
Description
図1~図3は、第1実施形態の半導体装置の製造方法を示す断面図である。本実施形態の半導体装置は、例えば3次元メモリである。
図5および図6は、第2実施形態の半導体装置の製造方法を示す断面図である。
6:フォトレジスト層、7:金属マスク層、8:金属マスク層、
11:第1ブロック絶縁膜、12:第2ブロック絶縁膜、13:電荷蓄積層、
14:トンネル絶縁膜、15:第1チャネル半導体層、16:下地マスク層、
17:金属マスク層、18:第2チャネル半導体層、19:コア絶縁膜
Claims (9)
- 基板上に第1膜を形成し、
前記第1膜上に第2膜を形成し、
前記第2膜に凹部を形成し、
前記第2膜上に、前記第2膜とともに前記凹部の側面を形成するように、金属元素を含有する第3膜を形成する第1処理と、前記第2および第3膜を用いて、前記凹部に露出した前記第1膜を加工する第2処理とを1回以上実行する、
ことを含み、
N回目(Nは1以上の整数)の第1処理では、前記第2膜上に前記第3膜を形成する前に、前記N回目の第1処理までに形成された前記凹部を加工することで、前記凹部の側面の上方に、前記凹部の側面に対して傾斜した面を形成する、半導体装置の製造方法。 - 前記第1処理と前記第2処理とを交互に繰り返し実行することで、前記凹部が前記第1膜を貫通するように前記第1膜を加工する、請求項1に記載の半導体装置の製造方法。
- 前記面は、前記凹部をドライエッチングにより加工することで形成される、請求項1または2に記載の半導体装置の製造方法。
- 前記第1膜は、前記基板上に交互に形成された複数の絶縁層と複数の電極層とを含み、
前記第3膜は、第1金属元素を含有し、前記絶縁層は、シリコンを含有し、前記電極層は、前記第1金属元素と異なる第2金属元素またはシリコンを含有する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。 - 前記第1膜は、前記基板上に交互に形成された複数の第1絶縁層と複数の第2絶縁層とを含み、
前記第3膜は、金属元素を含有し、前記第1絶縁層および前記第2絶縁層は、シリコンを含有する、請求項1から3のいずれか1項に記載の半導体装置の製造方法。 - 前記第3膜は、前記第2膜に形成された前記凹部の開口幅と同じ開口幅を有するように形成される、請求項1から5のいずれか1項に記載の半導体装置の製造方法。
- 基板上に第1膜を形成し、
前記第1膜に凹部を形成し、
前記凹部の側面および底面に第1層を形成し、
前記第1膜上に、前記第1層とともに前記凹部の側面を形成するように第2膜を形成し、
前記第2膜上に、前記第1層および前記第2膜とともに前記凹部の側面を形成するように第3膜を形成する第1処理と、前記第2および第3膜を用いて、前記凹部の底部の前記第1層を加工する第2処理とを1回以上実行する、
ことを含み、
N回目(Nは1以上の整数)の第1処理では、前記第2膜上に前記第3膜を形成する前に、前記N回目の第1処理までに形成された前記凹部を加工することで、前記凹部の側面の上方に、前記凹部の側面に対して傾斜した面を形成する、半導体装置の製造方法。 - 前記第1層の加工後に、前記凹部内に第2層を形成することを含む、請求項7に記載の半導体装置の製造方法。
- 前記第1層は少なくとも、電荷蓄積層と第1半導体層とを含み、
前記第2層は少なくとも、第2半導体層を含む、
請求項8に記載の半導体装置の製造方法。
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JP2018027170A JP7037384B2 (ja) | 2018-02-19 | 2018-02-19 | 半導体装置の製造方法 |
US16/031,535 US10515797B2 (en) | 2018-02-19 | 2018-07-10 | Method for producing semiconductor device |
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Citations (5)
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JP2007088169A (ja) | 2005-09-21 | 2007-04-05 | Sanyo Electric Co Ltd | 有機薄膜の製造方法並びにトランジスタ用またはダイオード用薄膜及び有機el用薄膜 |
JP2008060566A (ja) | 2006-08-22 | 2008-03-13 | Lam Res Corp | プラズマエッチング性能強化方法 |
JP2016105465A (ja) | 2014-11-14 | 2016-06-09 | ラム リサーチ コーポレーションLam Research Corporation | 垂直nandホールエッチングのためのめっき金属ハードマスク |
JP2017005178A (ja) | 2015-06-12 | 2017-01-05 | 株式会社東芝 | 半導体装置の製造方法 |
US20170186766A1 (en) | 2015-12-29 | 2017-06-29 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
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JP2002353195A (ja) | 2001-05-23 | 2002-12-06 | Sony Corp | 半導体装置の製造方法 |
JP5086851B2 (ja) | 2008-03-14 | 2012-11-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2016058456A (ja) | 2014-09-05 | 2016-04-21 | 株式会社東芝 | 半導体装置の製造方法 |
US10497567B2 (en) * | 2017-08-07 | 2019-12-03 | Applied Materials, Inc. | Method of enhanced selectivity of hard mask using plasma treatments |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007088169A (ja) | 2005-09-21 | 2007-04-05 | Sanyo Electric Co Ltd | 有機薄膜の製造方法並びにトランジスタ用またはダイオード用薄膜及び有機el用薄膜 |
JP2008060566A (ja) | 2006-08-22 | 2008-03-13 | Lam Res Corp | プラズマエッチング性能強化方法 |
JP2016105465A (ja) | 2014-11-14 | 2016-06-09 | ラム リサーチ コーポレーションLam Research Corporation | 垂直nandホールエッチングのためのめっき金属ハードマスク |
JP2017005178A (ja) | 2015-06-12 | 2017-01-05 | 株式会社東芝 | 半導体装置の製造方法 |
US20170186766A1 (en) | 2015-12-29 | 2017-06-29 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
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