TWI399794B - 用於含金屬層之加強成核的半導體表面電漿處理 - Google Patents

用於含金屬層之加強成核的半導體表面電漿處理 Download PDF

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TWI399794B
TWI399794B TW095141533A TW95141533A TWI399794B TW I399794 B TWI399794 B TW I399794B TW 095141533 A TW095141533 A TW 095141533A TW 95141533 A TW95141533 A TW 95141533A TW I399794 B TWI399794 B TW I399794B
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plasma
metal
layer
oxide
semiconductor substrate
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TW095141533A
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TW200739689A (en
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Dina H Triyoso
Olubunmi O Adetutu
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Freescale Semiconductor Inc
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Description

用於含金屬層之加強成核的半導體表面電漿處理
本發明一般係與半導體處理有關；更明確地說，係與用於含金屬層之加強成核的半導體表面電漿處理有關。
半導體裝置愈來愈需要用到以氧化矽為基礎之薄閘極介電膜。然而，以SiOn 為基礎之薄閘極介電膜會導致閘極洩漏增加。如今已有考慮以高介電常數(K)的薄膜取代以SiOn 為基礎的閘極介電質。傳統上，高介電常數(K)膜是利用原子層沉積法(ALD)之已知製程形成，然而，該薄膜會導致該高介電常數介電質在含矽表面上的成核狀況很差。先前試圖解決此問題的方法包括了運用標準清潔程序(例如，SC-2清潔程序)。然而，此步驟使用ALD製程成核沉積該閘極介電材料，沉積化學氧化物之一薄層。因此，該化學氧化物就成為該閘極介電質的一整體部分，其影響該閘極介電質的整合性以及比例。此外，該化學氧化物會減少該閘極介電薄膜的總體介電常數。
因此，需要用於含金屬層之加強成核的半導體表面電漿處理方法。
一方面，本發明提供一種用於形成一介電層之方法。該方法可包括提供一半導體表面，並蝕刻該半導體基板之一薄層以便曝露該半導體表面，其中經曝露之該表面是疏水性。該方法可進一步包括將利用電漿處理該半導體基板之經曝露之 該表面，以中和與經曝露之該表面相關聯的疏水性。該方法可進一步包括運用一原子層沉積製程在經電漿處理之該表面的一頂部表面上形成一含金屬層。
另一方面，本發明提供一種用於形成一高常數介電層的方法。此方法可包括蝕刻一半導體基板之一薄層以便曝露該半導體基板之一表面，其中經曝露之該表面是疏水性。該方法可進一步包括利用電漿處理該半導體基板之經曝露之該表面，以中和與經曝露之該表面相關聯的疏水性並將該半導體基板的一頂層轉變成一非晶形式。該方法可進一步包括運用一原子層沉積製程在經電漿處理之該表面的一頂部表面上形成一含金屬層。
圖1係於處理期間一半導體裝置的斷面圖，此處理與本發明之一具體實施例相符。半導體裝置(100)可包括一基板(10)。就一形式來說，基板(10)可以是一塊半導體，例如矽、鍺化矽，或鍺，或任何適當的半導體材料。或者，基板(10)可植入為一絕緣體上矽(SOI)基板。如第一步驟之部分，該基板(10)的頂部表面(12)可經蝕刻以移除任何氧化物，例如，在基板(10)頂部表面(12)上所形成的原生氧化物。舉例來說，厚度可能係10到20埃的薄層(14)可被蝕刻除去。任何適當的蝕刻技術(例如乾式蝕刻或溼式蝕刻)均可採用。舉例來說，可用氟氫酸蝕刻層(14)。雖然圖1顯示一被蝕刻之底部層基板(10)，一類似於半導體裝置(100)的其他級之層亦可同樣蝕刻。
接下來，如圖2所示，半導體裝置(100)的頂部表面(16)可經受一電漿處理(18)。使用氫氟酸可使基板(10)的頂部表面(16)成為疏水性。舉例來說，可執行一原位電漿處理以中和疏水性的表面(例如，半導體(100)的頂部表面(16))。電漿處理(18)可運用功率範圍100瓦到1000瓦來執行。執行電漿處理(18)的持續時間係1秒到60秒。在電漿點火階段之後可用任何鈍性氣體，例如氬、氮、氦、氙，或以上之一組合作為該電漿處理的一部分。如圖3所示，電漿處理可導致一電漿改質層(20)。利用電漿處理該半導體基板的經曝露之該表面可改進電漿改質層(20)之頂部表面(22)上含金屬層的成核。如電漿處理的結果，電漿改質層(20)可被改變成更為非晶性形式。舉例來說，電漿改質層(20)之深度可為10到100埃。為進一步協助將電漿改質層(20)轉變成一非晶形式的製程，可使用額外的氣體，例如，氟化物(例如，NF3 、F2 或B3 F6 )、氯化物(例如，Cl2 )，及/或氮化物(N2 或NH3 )。
接著，如圖4所示，使用一原子層沉積製程，可在電漿改質層(20)的一頂部表面(22)上沉積一薄的閘極介電質，例如金屬氧化物。薄閘極介電層(例如，一含金屬層)可使用多次原子層沉積製程循環形成。每一循環可導致至少一部分金屬氧化物層可形成在電漿改質層(20)之頂部表面(22)上。運用多次原子層沉積循環沉積前緣(24、26和28)可導致一含金屬層(30)之形成。舉例來說，含金屬層(30)可為任何金屬氧化物層，例如：二氧化鉿、氧化鑭、氧化釔、氧化鈦、氧化鉭或具有其他稀土金屬或過渡金屬的氧化物。該金屬氧化物也可包括任意數目的金屬，例如，氧化鋁鉿、其他金屬鋁酸鹽等等。或者，含金屬層(30)可為任何金屬矽酸鹽，例如，矽酸鉿、矽酸鑭，以及具有其他稀土金屬或過渡金屬的任何其他矽酸鹽類。額外地和/或可替換地，含金屬層(30)也可包括金屬－矽－氧氮化合物，例如HfSix Oy Nz .
在前述規格書中，已參考特定具體實施例來說明本發明。然而，習知此項技術者應瞭解可進行各種修改及變化而不脫離如以下申請專利範圍所提出之本發明之範疇。因此，本說明書及附圖應視為說明性，而非限制性，且希望所有此類修改均包括於本發明之範疇內。
以上已針對特定具體實施例而說明好處、其他優點及問題解決方案。然而，好處、優點、問題解決方案、及引起任何利益、優點、或解決方案發生或變得突出之(多個)元件，均不應視為任一或所有申請專利之一關鍵、必須或本質特徵或元件。本文中所使用的術語"包括"、"包含"或其任何其他變化均意欲涵蓋非專有內含項，使得包含一元件清單的製程、方法、物品或裝置不僅包括這等元件，而且還包括未明確列出或此類製程、方法、物品或裝置固有的其他元件。
10．．．基板
12．．．頂部表面
14．．．薄層
16．．．頂部表面
18．．．電漿處理
20．．．薄層
22．．．頂部表面
24．．．沉積前緣
26．．．沉積前緣
28．．．沉積前緣
30．．．薄層
100．．．半導體裝置
本發明以範例方式而加以說明，並不受限於該等附圖，其中相同參考指示相同元件，且其中：圖1係於處理期間一半導體裝置的斷面圖，此處理與本發明之一具體實施例相符；圖2係利用電漿處理一半導體裝置的斷面圖，此電漿處理與本發明之一具體實施例相符；圖3係一具有電漿改質層之半導體裝置的斷面圖，此電漿改質層與本發明之一具體實施例相符；以及圖4係一具有閘極介電質之半導體裝置的斷面圖，此閘極介電質與本發明之一具體實施例相符。
習知此項技術者應瞭解，出於簡單及清楚起見而說明圖示中的元件且不必比例縮放。例如，該等圖示中的某些元件可能相對於其他元件而加以放大以促進理解本發明之具體實施例。
10．．．基板
20．．．電漿改質層
22．．．頂部表面
24．．．沉積前緣
26．．．沉積前緣
28．．．沉積前緣
30．．．含金屬層
100．．．半導體裝置

Claims (20)

  1. 一種用於形成介電層的方法，其包括：提供一半導體基板；蝕刻該半導體基板之一薄層以便曝露該半導體基板之一表面，其中經曝露之該表面係疏水性；利用電漿處理該半導體基板之經曝露之該表面以中和與經曝露之該表面相關聯之疏水性並在深度10至100埃之間形成一非晶態形式之一電漿改質層；以及運用一原子層沉積製程在經電漿處理之該表面的一頂部表面上形成作為介電質之一含金屬層。
  2. 如請求項1之方法，其中蝕刻包括運用氫氟酸以蝕刻該薄層。
  3. 如請求項1之方法，其中該電漿係原地實施。
  4. 如請求項1之方法，其中該含金屬層包括至少金屬氧化物。
  5. 如請求項4之方法，其中該金屬氧化物係下列至少一項：二氧化鉿、氧化鑭、氧化釔、氧化鈦、氧化鉭、氧化鋯，或一具有其他稀土金屬或過渡金屬的氧化物，或以上任何組合。
  6. 如請求項1之方法，其中該含金屬層包括金屬矽酸鹽和金屬-矽-氧氮化合物之至少一項。
  7. 如請求項6之方法，其中該金屬矽酸鹽係下列至少一項：矽酸鉿、矽酸鑭，以及一具有其他稀土金屬或過渡金屬之任何其他矽酸鹽，或以上任何組合。
  8. 如請求項1之方法，其中利用電漿處理該半導體基板之經曝露之該表面用以產生一電漿改質層。
  9. 如請求項8之方法，其中利用電漿處理該半導體基板之經曝露之該表面以改進該電漿改質層之頂部表面上的該含金屬層之成核。
  10. 如請求項1之方法，其中經曝露之該表面係利用功率範圍為100瓦到500瓦的電漿處理，而且持續時間範圍是1到60秒。
  11. 一種用於形成一高介電常數層的方法，其包括：蝕刻該半導體基板之一薄層以曝露該半導體基板之一表面；利用電漿處理該半導體基板之經曝露之該表面以將該半導體基板一頂層改變成一非晶形式；以及運用一原子層沉積製程在經電漿處理之該表面一頂部表面之上形成一含金屬層。
  12. 如請求項11之方法，其中蝕刻包括運用氫氟酸以蝕刻該薄層。
  13. 如請求項11之方法，其中該電漿係原地實施。
  14. 如請求項11之方法，其中該含金屬層包括至少金屬氧化物。
  15. 如請求項14之方法，其中該金屬氧化物係下列至少一項：二氧化鉿、氧化鑭、氧化釔、氧化鈦、氧化鉭、氧化鋯，或一具有其他稀土金屬或過渡金屬之氧化物，或以上任何組合。
  16. 如請求項11之方法，其中該含金屬層包括至少金屬矽酸鹽。
  17. 如請求項16之方法，其中該金屬矽酸鹽係下列至少一項：矽酸鉿、矽酸鑭，以及其他任何具有其他稀土金屬或過渡金屬的矽酸鹽，或以上任何組合。
  18. 如請求項11之方法，其中利用電漿處理該半導體基板之經曝露之該表面以產生一電漿改質層。
  19. 如請求項18之方法，其中利用電漿處理該半導體基板之經曝露之該表面以改進該電漿改質層之頂部表面上的該含金屬層之成核。
  20. 如請求項11之方法，其中該含金屬層包括至少金屬-矽-氧氮化物。
TW095141533A 2005-11-30 2006-11-09 用於含金屬層之加強成核的半導體表面電漿處理 TWI399794B (zh)

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