JP5057248B2 - 測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置 - Google Patents

測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置 Download PDF

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Publication number
JP5057248B2
JP5057248B2 JP2008513187A JP2008513187A JP5057248B2 JP 5057248 B2 JP5057248 B2 JP 5057248B2 JP 2008513187 A JP2008513187 A JP 2008513187A JP 2008513187 A JP2008513187 A JP 2008513187A JP 5057248 B2 JP5057248 B2 JP 5057248B2
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pattern
measurement
exposure
inspection
mask
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Expired - Fee Related
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JPWO2007125853A1 (ja
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晋一 沖田
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2008513187A 2006-04-27 2007-04-23 測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置 Expired - Fee Related JP5057248B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008513187A JP5057248B2 (ja) 2006-04-27 2007-04-23 測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006123123 2006-04-27
JP2006123123 2006-04-27
PCT/JP2007/058716 WO2007125853A1 (ja) 2006-04-27 2007-04-23 測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置
JP2008513187A JP5057248B2 (ja) 2006-04-27 2007-04-23 測定検査方法、測定検査装置、露光方法、デバイス製造方法及びデバイス製造装置

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JPWO2007125853A1 JPWO2007125853A1 (ja) 2009-09-10
JP5057248B2 true JP5057248B2 (ja) 2012-10-24

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Country Status (5)

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US (1) US7688436B2 (enExample)
JP (1) JP5057248B2 (enExample)
KR (1) KR101357960B1 (enExample)
TW (1) TW200746259A (enExample)
WO (1) WO2007125853A1 (enExample)

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JP5252249B2 (ja) * 2006-02-17 2013-07-31 株式会社ニコン デバイス製造処理方法
US8023102B2 (en) * 2008-04-18 2011-09-20 International Business Machines Corporation Test method for determining reticle transmission stability
KR101292570B1 (ko) * 2008-12-31 2013-08-12 엘지디스플레이 주식회사 액정표시장치의 변형 검사시스템
TWI488245B (zh) * 2009-05-19 2015-06-11 United Microelectronics Corp 檢測光阻圖案的方法
JP5296260B2 (ja) 2010-03-30 2013-09-25 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法
JP5742370B2 (ja) * 2011-03-29 2015-07-01 凸版印刷株式会社 マスク基板の製造方法
NL2009853A (en) 2011-12-23 2013-06-26 Asml Netherlands Bv Methods and apparatus for measuring a property of a substrate.
JP5797582B2 (ja) * 2012-02-24 2015-10-21 株式会社アドテックエンジニアリング 露光描画装置、プログラム及び露光描画方法
JP6200224B2 (ja) * 2012-09-13 2017-09-20 日本メクトロン株式会社 フォトマスク、フォトマスク組、露光装置および露光方法
JP6310263B2 (ja) * 2014-01-30 2018-04-11 株式会社ニューフレアテクノロジー 検査装置
JP6942634B2 (ja) * 2015-03-03 2021-09-29 レブストック，ルッツ 点検システム
US9548274B1 (en) * 2015-11-20 2017-01-17 Taiwan Semiconductor Manufacturing Company Ltd. Reticle for non-rectangular die
US10877381B2 (en) * 2016-10-21 2020-12-29 Asml Netherlands B.V. Methods of determining corrections for a patterning process
JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
JP2020076609A (ja) * 2018-11-06 2020-05-21 キヤノン株式会社 異物検査装置、処理装置および物品製造方法
KR102160170B1 (ko) * 2018-11-21 2020-09-25 에스케이실트론 주식회사 웨이퍼 표면의 파티클 측정 장치 및 방법
JP7578531B2 (ja) * 2021-04-05 2024-11-06 信越化学工業株式会社 欠陥検査装置、欠陥検査方法及びフォトマスクブランクの製造方法
CN118732420B (zh) * 2024-08-30 2024-11-26 温州职业技术学院 一种曝光机的双面对位装置
CN119738419A (zh) * 2024-12-26 2025-04-01 合光光掩模科技(安徽)有限公司 光掩模版缺陷检测方法、系统及计算机可读介质

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JP2001174977A (ja) * 1999-12-20 2001-06-29 Nec Corp 露光パターン及び露光原版の検査方法
JP2001250756A (ja) * 2000-03-03 2001-09-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004191297A (ja) * 2002-12-13 2004-07-08 Sony Corp マスク検査方法および検査装置

Also Published As

Publication number Publication date
WO2007125853A1 (ja) 2007-11-08
US7688436B2 (en) 2010-03-30
KR20090009773A (ko) 2009-01-23
TWI342038B (enExample) 2011-05-11
JPWO2007125853A1 (ja) 2009-09-10
KR101357960B1 (ko) 2014-02-03
TW200746259A (en) 2007-12-16
US20070259290A1 (en) 2007-11-08

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