Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70605—Workpiece metrology
  • G03F7/70616—Monitoring the printed patterns
  • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/956—Inspecting patterns on the surface of objects
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
  • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
  • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
  • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
  • G03F1/84—Inspecting
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70216—Mask projection systems
  • G03F7/70283—Mask effects on the imaging process
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
  • G03F7/70605—Workpiece metrology
  • G03F7/70616—Monitoring the printed patterns
  • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
  • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/84—Systems specially adapted for particular applications
  • G01N21/88—Investigating the presence of flaws or contamination
  • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
  • G01N21/956—Inspecting patterns on the surface of objects
  • G01N2021/95676—Masks, reticles, shadow masks

Definitions

• Measurement inspection method Measurement inspection method, measurement inspection apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
• the present invention relates to a measurement / inspection method, a measurement / inspection apparatus, an exposure method, a device manufacturing method, and a device manufacturing apparatus. More specifically, the present invention relates to a plurality of exposures that irradiate the same region of an exposed region on a substrate.
• Measurement / inspection method for measuring and inspecting at least one of a plurality of masks arranged on the optical path of each light, measurement / inspection apparatus using the measurement / inspection method, and exposure for irradiating an exposure area on a substrate with a plurality of exposure lights
• the present invention relates to a method, a device manufacturing method including an exposure step of irradiating a region to be exposed with a plurality of exposure lights, and a device manufacturing apparatus using the device manufacturing method.
• a defect inspection of a pattern formation surface of a reticle has been performed from the viewpoint of throughput, not just before exposure but after reticle manufacture, or at regular inspection.
• multiple exposure in which multiple patterns are superimposed and transferred onto the same area on the exposed surface of the substrate.
• the method has been used (see, for example, Patent Document 1).
• the effective area of the pattern irradiated with the exposure light is larger than that in the normal exposure method, so that the necessity for defect inspection of the pattern forming surface on the reticle immediately before the exposure is increasing.
• the exposure result on the substrate is a result of overlay transfer of patterns on a plurality of reticles, so that there is no defect directly related to the yield of device production on the pattern formation surface. It is extremely difficult to identify a defect as compared with a normal exposure method.
• Patent Document 1 Japanese Patent Laid-Open No. 10-209039
• the present invention has been made in view of the above circumstances. From the first viewpoint, the present invention is arranged on the optical path of each of a plurality of exposure lights irradiated on the same region of the exposure region on the substrate.
• the processing contents of the measurement / inspection processing of each of the plurality of masks used for exposure to the same region on the substrate are changed according to information on other masks. This makes it possible to measure and inspect masks that are directly linked to the yield of device production, taking into account the overall exposure state in the same exposed area on the substrate as well as the exposure state of each mask. .
• At least one of a plurality of masks arranged on each optical path of each of a plurality of exposure lights irradiated on the same region of the exposure region on the substrate is measured.
• a measurement / inspection method for performing a regular inspection the method including a step of obtaining a total light amount of the plurality of exposure lights irradiated on the same region of the exposed region.
• an exposure method for irradiating a region to be exposed on a substrate with a plurality of exposure lights wherein the plurality of exposure lights are arranged on an optical path of each of the plurality of exposure lights.
• a second mask different from the first mask is measured and inspected according to information on the first pattern formed on the first mask of the mask, and the substrate is determined based on the result of the measurement and inspection process.
• This exposure method controls the exposure process.
• the measurement inspection result of the second mask using information on the first pattern formed on the first mask among the plurality of masks arranged on the respective optical paths of the plurality of exposure lights. That is, it is possible to control the exposure processing of the substrate based on the comprehensive measurement inspection result over a plurality of masks. This makes it possible to use a mask that has passed comprehensive measurement inspections. High-precision exposure is possible.
• a device manufacturing method including an exposure step of irradiating an exposed area of a substrate with a plurality of exposure lights, which are arranged on an optical path of each of the plurality of exposure lights.
• a device manufacturing method including a step of measuring and inspecting a second mask different from the first mask according to information on the first pattern formed on the first mask among the plurality of masks.
• a device manufacturing method including an exposure step of irradiating a region to be exposed on a substrate with a plurality of exposure lights, wherein each of the plurality of exposure lights is provided on an optical path.
• a predetermined process is performed on the mask based on a total light amount of the plurality of exposure light beams that are irradiated to a predetermined position of the exposure area through each of the plurality of masks arranged.
• an exposure method for exposing an object by forming images of a plurality of patterns simultaneously or sequentially in the same area on the object, the same or different masks Measurement and inspection processing of an area formed with one of the plurality of patterns formed above is executed in consideration of information regarding at least one of the plurality of patterns. And an exposure method for controlling an exposure condition of the object based on a result of the measurement / inspection process.
• a measurement inspection result of an area in which one pattern is formed on the same or different masks, taking into consideration information of another pattern among the plurality of patterns, that is, The exposure condition of the object can be controlled based on the comprehensive measurement / inspection result over a plurality of patterns. This enables high-precision exposure using multiple patterns that have passed comprehensive measurement and inspection.
• FIG. 1 is a schematic diagram showing a configuration of a device manufacturing system according to an embodiment.
• FIG. 2 is a schematic view showing the arrangement of an exposure apparatus according to an embodiment.
• FIG. 3 is a schematic configuration diagram of a reticle measurement / inspection instrument.
• FIG. 4 is a flowchart of a device manufacturing process.
• FIG. 5 is a flowchart of reticle optimization.
• FIG. 6 (A) to FIG. 6 (E) are diagrams for explaining pattern region classification.
• FIG. 7 A table that summarizes the criteria for creating an inspection condition map.
• FIG. 1 shows a schematic configuration of a device manufacturing system according to an embodiment.
• the device manufacturing system 1000 is a system built in a device manufacturing factory to process semiconductor wafers and manufacture micro devices. As shown in FIG. 1, the device manufacturing system 1000 includes an exposure apparatus 100, a track 200 arranged adjacent to the exposure apparatus 100, a management controller 160, an analysis apparatus 500, a host system 600, Device manufacturing equipment group 900.
• the exposure apparatus 100 is an apparatus that transfers a device pattern onto a wafer coated with a photoresist.
• FIG. 2 shows a schematic configuration of the exposure apparatus 100.
• the exposure apparatus 100 includes an illumination system 10 that emits exposure light IL1 and IL2, a reticle R1 on which a device pattern illuminated by the exposure light IL1, and a device pattern illuminated by the exposure light IL2 are formed.
• a part of the device pattern formed on each of reticles Rl and R2 illuminated by reticle stage RST and exposure light IL1 and IL2 is held on the surface to be exposed on wafer W.
• a projection optical system PL on both sides that projects onto the wafer, a wafer W that holds the wafer W to be exposed via the wafer holder WH, a stage WST, and a main controller 20 that controls these in an integrated manner.
• Illumination lights IL1 and IL2 from the illumination system 10 are applied to part of the pattern forming surfaces of the reticles Rl and R2. These irradiation areas are designated as illumination areas IAR1 and IAR2.
• Illumination light IL1 and IL2 that have passed through illumination areas IAR1 and IAR2, respectively, are supplied to projection optical system PL. Then, the light is incident on a part of the exposed surface (wafer surface) of the wafer w held on the wafer stage WST, and the projection images of the device patterns of the illumination regions IAR1 and IAR2 are formed so as to overlap therewith. An area where this projection image is formed is defined as an exposure area IA.
• the exposed surface of the wafer W is coated with a photoresist, and the projected image pattern is transferred to the portion corresponding to the exposure area IA.
• Wafer stage WST can move in the XY plane, and the exposed surface of wafer W can be shifted in the Z-axis direction, in the 0 x (rotation around the X axis) direction, and in the 0 y (rotation around the Y axis) direction. It is possible to adjust.
• reticle stage RST holding reticles Rl and R2 can move in the XY plane in synchronization with wafer stage WST holding wafer W.
• the device pattern on the reticles Rl and R2 is synchronized to pass through the illumination areas IAR1 and IAR 2.
• the exposed surface force of the wafer W passes through the exposure area IA.
• the entire device pattern on the pattern forming surface on the reticles Rl and R2 is transferred to a partial region (shot region) on the exposed surface of the wafer W.
• the exposure apparatus 100 repeats the above-described relative synchronous scanning of the reticle stage RST and the wafer stage WST with respect to the exposure light IL1 and IL2, and the step of the wafer stage WST holding the wafer W, thereby causing the reticles Rl and R2 to repeat.
• the upper device pattern is transferred to multiple shot areas on wafer W. That is, the exposure apparatus 100 is a scanning exposure (step 'and' scan) type exposure apparatus that performs so-called multiple exposure (double exposure).
• reticle holder RH is not integrated with reticle stage RST, and can be detached. Of course, this detachment is possible even when the reticles Rl and R2 are not held, and can be exchanged by a reticle holder exchange machine (not shown).
• Main controller 20 is a computer system that controls each component of exposure apparatus 100.
• the main controller 20 is connected to a communication network built in the device manufacturing system 1000, and data can be transmitted / received to / from the outside via the communication network.
• the exposure apparatus 100 includes reticles Rl and R2 used for exposure.
• Reticle measuring and inspecting instrument 130 to be inspected before loading to stage RST is connected in-line.
• Reticle measurement / inspection instrument 130 performs various measurements and inspections of reticles Rl and R2.
• the pattern forming surface of Reticunore Rl and R2 is a glass surface. Basically, a metal film such as chromium is deposited on the glass surface to form a metal film, and the metal film is patterned. Thus, the pattern region is formed on the non-turn forming surface.
• the pattern formed in this pattern region is also referred to as a chrome pattern.
• Reticle measurement / inspection device 130 detects defects on the pattern formation surface by visual inspection of the pattern formation surfaces of reticles Rl and R2. This defect is classified into a hard defect and a soft defect. Hard defects include missing chrome patterns, residual unwanted chrome patterns, and glass scratches. Soft defects include dust, dirt, and foreign matter. Hard defects cannot be removed by chemical and mechanical cleaning processes, but soft defects can be removed by those processes. In the visual inspection, hard and soft defects on the pattern formation surface are detected.
• the pattern forming surfaces of the reticles Rl and R2 can be divided into a light transmitting part and a light shielding part.
• the defect on the translucent part illuminates the pattern forming surface, images its back side force, and detects the defect based on the imaging result.
• Reticle measurement / inspection instrument 130 compares the pattern of images captured with transmitted light by chip comparison (die-to-die comparison) or data comparison (die-to-DB (da tabase) comparison). Differences in the results are detected as defects in the translucent part.
• the defect detection sensitivity in the reticle measuring and inspecting instrument 130 is set to about 1Z3 of the design pattern rule as a standard. For example, when the design pattern rule is 0.3 ⁇ m, a detection sensitivity of about 0.1 m is required as a standard.
• Such defect inspection sensitivity and the number of pixels of image data can be adjusted to some extent at various points in the pattern formation surface.
• the reticle measurement / inspection instrument 130 includes a stage (not shown) corresponding to the reticle stage RST in the exposure apparatus 100, a light source 801, a vibrating mirror 802, a scanning lens 803, and a light receiver 808. 809 810 and including.
• the stage is configured to hold the reticle holder RH holding the reticle R1 by vacuum suction.
• This stage is loaded with the reticle holder RH by the reticle holder exchange described above, and the reticle holder RH is held by suction on the stage.
• reticle R1 On reticle holder RH, reticle R1 is held by suction with the pattern formation surface facing upward (that is, in the direction opposite to the front and back of reticle stage RST). It is assumed that a circuit pattern is formed on the pattern formation surface (test surface 804) of reticle R1, and that foreign matter 806 is attached to a part of the circuit pattern.
• a reticle holder capable of holding the reticle R2 is also provided on a stage (not shown).
• the light beam L1 emitted from the light source 801 is deflected by a vibrating mirror (galvano scanner mirror or polygon scanner mirror) 802, enters the scanning lens 803, and the light beam L2 emitted from the scanning lens 803 Scans the scanning line 805 on the surface 804 to be examined.
• a vibrating mirror galvano scanner mirror or polygon scanner mirror
• the entire surface on the test surface 804 can be scanned by the light beam L2. It ’s like this.
• scattered light L3 is generated.
• the diffracted light L4 is emitted from the pattern 807. appear.
• the light receivers 808, 809, and 810 are arranged to face the scanning line 805 from different directions.
• the scattered light L3 generated from the foreign object 806 is isotropically scattered light generated in almost all directions, whereas the diffracted light L4 generated from the pattern 807 is generated by diffraction, so that it is spatially discrete.
• the light is emitted in the direction with strong directivity. If light is detected by all of the receivers 808, 809, and 810 using the difference in properties between the scattered light L3 and the diffracted light L4, it is determined that the light is scattered light from the defect.
• the reticle measuring and inspecting instrument 130 can detect the foreign matter 806 on the light shielding portion. It becomes possible.
• the scanning speed of the light beam and the feed speed for sending reticle R1 can be changed during scanning. In this way, it is possible to set the light scanning speed and the feeding speed for sending the reticle R1 to be slower at V and the place where the defect inspection is performed precisely.
• the detection sensitivity of scattered light can be changed during scanning. As a result, it is possible to increase the detection sensitivity at a place where a minute defect is to be detected (for example, a place where the pattern is fine).
• reticle measurement / inspection instrument 130 includes a Fizeau interferometer (not shown).
• the reticle measuring and inspecting instrument 130 can measure the surface shape of the pattern forming surfaces of the reticles Rl and R2 while being attracted and held by the reticle holder RH using a Fizeau interferometer or the like.
• Raw measurement data such as defect inspection data on the pattern forming surface and measurement data on the surface shape is stored in a storage device (not shown).
• the reticle measurement / inspection instrument 130 is connected to an external communication network, and can transmit / receive data to / from an external device, and transmits these measurement raw data to the outside as necessary.
• a plurality of reticles on which the same pattern is formed are prepared. That is, a plurality of reticles that can be used as the reticle R1 and a plurality of reticles that can be used as the reticle R2 are prepared.
• the exposure apparatus 100 performs exposure by selecting a reticle having good compatibility between the pattern forming surfaces from among these reticles.
• the track 200 is disposed in contact with a chamber (not shown) surrounding the exposure apparatus 100.
• the track 200 mainly carries in and out the wafer W with respect to the exposure apparatus 100 by a transfer line provided inside.
• the track 200 is provided with a coater / developer (CZD) 110 for applying and developing a resist.
• the CZD 110 can adjust the processing state to some extent by setting the device parameters. As a result, it is possible to adjust the thickness of the resist applied on the wafer W and the development time.
• the CZD 110 can operate independently of the exposure apparatus 100 and the wafer measurement / inspection instrument 120.
• the CZD 110 is disposed along the transport line of the truck 200. Therefore, this transfer line enables transfer of wafer W between exposure apparatus 100 and CZD 110.
• the C / D 110 is connected to a communication network in the device manufacturing system 1000, and can send and receive data to and from the outside. For example, the CZD 110 can output information about the process (information such as the trace data).
• a combined wafer measuring and inspecting instrument 120 capable of performing various measurement inspections on the wafer W and W before and after the exposure of the wafer W by the exposure apparatus 100 (that is, before and after).
• Wafer measurement / inspection instrument 120 can operate independently of exposure apparatus 100 and CZD 110.
• the wafer measurement / inspection instrument 120 performs a pre-exposure inspection process before exposure and a post-exposure measurement / inspection process after exposure.
• the surface shape of the exposed surface of the wafer W is measured, the foreign matter on the wafer W is inspected, and the resist film on the wafer W is detected. And so on.
• the post-measurement inspection process the line width and overlay error of the resist pattern and the like on the wafer W after exposure (post-exposure) transferred by the exposure apparatus 100 and developed by the CZD110, and wafer defect / foreign particle inspection are performed.
• the wafer measurement / inspection instrument 120 can output the results of the pre-measurement inspection to the outside via a communication network in the system.
• the wafer measurement / inspection instrument 120 is disposed along the transport line of the track 200. Therefore, the wafer W can be transferred between the exposure apparatus 100, the CZD 110, and the wafer measurement / inspection instrument 120 by this transfer line. That is, the exposure apparatus 100, the track 200, and the wafer measurement / inspection instrument 120 are connected in-line to each other.
• the in-line connection means that the apparatuses and the processing units in each apparatus are connected via a conveying device for automatically conveying the Weno and W such as a robot arm or a slider. With this inline connection, the wafer W transfer time between the exposure apparatus 100, the CZD 110, and the wafer measurement / inspection instrument 120 can be remarkably shortened.
• the measurement measuring and inspecting instrument 130 can be regarded as one substrate processing apparatus (100, 110, 120, 130) as a whole.
• the measurement and inspection process for the reticles R1 and R2 the coating process for applying a photosensitizer such as photoresist to Weno and W, and the photosensitizer were applied.
• An image of the reticle Rl, R2 pattern is projected onto the wafer W and exposed to light, and a developing process for developing the wafer W after the exposure process is performed. Details of these steps will be described later.
• the exposure apparatus 100, the CZD 110, the wafer measurement / inspection instrument 120, and the reticle measurement / inspection instrument 130 include a plurality of units. Is provided. Each substrate processing apparatus (100, 110, 120, 130) and device manufacturing apparatus group 900 is installed in a clean room in which temperature and humidity are controlled.
• data communication can be performed between devices via a predetermined communication network (for example, LAN: Local Area Network).
• LAN Local Area Network
• a plurality of wafers W are processed as one unit (referred to as a lot).
• Ueno and W are processed and commercialized using 1 lot as a basic unit. Therefore, the wafer process in the device manufacturing system 1000 is also called lot processing.
• the wafer measurement / inspection instrument 120 is placed in the track 200 and is in-line connected to the exposure apparatus 100 and the CZD 110. 100 and CZD110 may be configured offline. Further, the reticle measurement / inspection instrument 130 may be placed in the exposure apparatus 100 or the track 200. That is, the measurement and inspection of the reticles Rl and R2 may be performed in the exposure apparatus 100. In short, the reticle measuring and inspecting instrument 130 may be placed on the transport path of the reticles Rl and R2.
• a personal computer (hereinafter also referred to as a PC) can be employed as hardware for realizing the information processing in the wafer measurement / inspection instrument 120 and the reticle measurement / inspection instrument 130 described above.
• a PC personal computer
• it is executed by the CPU (not shown) of this information processing device.
• This is realized by executing the program to be executed.
• the analysis program is supplied by media (information recording medium) such as CD-ROM and is executed in the state installed in the PC.
• the analysis apparatus 500 is an apparatus that operates independently of the exposure apparatus 100 and the track 200.
• the analysis device 500 is connected to a communication network in the device manufacturing system 1000, and can send and receive data to and from the outside.
• the analysis apparatus 500 collects various data (for example, processing contents of the apparatus) from various apparatuses via the communication network, and analyzes data related to the process on the wafer.
• a personal computer can be employed as hardware for realizing such an analysis apparatus 500.
• the analysis processing is realized by executing an analysis program executed by a CPU (not shown) of the analysis apparatus 500.
• This analysis program is supplied by a medium (information recording medium) such as a CD-ROM and is executed in a state installed in a PC.
• the analysis apparatus 500 optimizes the processing conditions of the reticles Rl and R2 based on the measurement / inspection result of the reticle measurement / inspection instrument 130.
• the function of the analysis apparatus 500 itself may be included in the reticle measurement / inspection instrument 130 or in the exposure apparatus 100.
• the device manufacturing apparatus group 900 includes a CVD (Chemical Vapor Deposition) apparatus 910, an etching apparatus 920, a CMP (Chemical Mechanical Polishing) apparatus 930, and an oxide ion implantation apparatus 940.
• the CVD system 910 is an apparatus for forming a thin film on a wafer
• the etching apparatus 920 is an apparatus for etching a developed wafer.
• the CMP apparatus 930 is a polishing apparatus that flattens the surface of the wafer by chemical mechanical polishing
• the oxide ion implantation apparatus 940 forms an oxide film on the surface of the wafer W, or a predetermined position on the wafer W. Is an apparatus for implanting impurities.
• the device manufacturing apparatus group 900 includes apparatuses that perform probing processing, repair processing, dicing processing, packaging processing, and bonding processing.
• the management controller 160 centrally manages the exposure process performed by the exposure apparatus 100, and also manages the C / D 110 and the wafer measurement / inspection instrument 120 in the track 200 and controls their cooperative operation.
• a controller for example, a personal computer can be employed.
• the management controller 160 receives information indicating the progress status of processing and operation, and information indicating the processing result and measurement 'inspection result' from each apparatus through the communication network in the device manufacturing system 1000. Understand the situation of the entire production line, and manage and control each device so that the exposure process etc. is performed appropriately.
• a host system (hereinafter referred to as “host”) 600 manages and manages the entire device manufacturing system 1000, and includes an exposure apparatus 100, a track 200, a wafer measurement / inspection instrument 120, a reticle measurement / inspection instrument 130, and a device manufacturing apparatus group 900.
• This is the main host computer that performs overall control.
• a personal computer can be employed.
• the host 600 and other devices are connected through a wired or wireless communication network, and can perform data communication with each other. Through this data communication, the host 600 realizes overall control of this system.
• Figure 4 shows a flowchart of this process.
• a series of processes of the device manufacturing system 1 000 is scheduled and managed by the host 600 and the management controller 160.
• the reticles Rl and R2 are loaded into the reticle measurement / inspection instrument 130.
• Two reticle holders RH are adsorbed and held on the stage of reticle measuring and inspecting instrument 130, and reticles Rl and R2 are adsorbed and held in reticle holder RH in the direction described above.
• the surface shapes of the pattern formation surfaces of the reticles Rl and R2 are measured. This surface shape data is sent to the analysis device 500.
• the reticle R1 is optimized. Here, the defect inspection of the pattern formation surface of reticle R1 in measurement / inspection instrument 120 and the optimization of reticle R1 in analysis apparatus 500 using the inspection result are performed.
• FIG. 5 shows a flowchart of the optimization of reticle R 1 performed in step 203.
• the host 600 issues a processing start command to the analysis device 500.
• the analysis device 500 is in a command reception waiting state, and upon receiving this command, the process proceeds to step 302.
• the analysis apparatus 500 creates an inspection condition map for inspecting the reticle R1 of the reticle measurement inspection device 130 for defects.
• the inspection conditions can be changed for each region of the pattern forming surface of reticle R1.
• the inspection condition map shows the inspection conditions for detecting only defects that directly affect the yield of device production in the defect inspection of reticle R1 in association with the locations on the pattern surface.
• the standard for creating the inspection condition map is mainly based on the attribute of the pattern formed at that location.
• the inspection condition of the reticle R1 can be changed depending on whether it is a certain point force transmitting part or a light shielding part in the pattern region of the reticle R1.
• the defect in the light transmitting part is more likely to affect the transfer result of the wafer W than the defect in the light shielding part. Therefore, the inspection condition is set so that the defect in the light transmitting part is detected more strictly. It is desirable to change.
• the analysis device 500 extracts an arbitrary point in the pattern region (PA1) of the reticle R1, and determines whether the point is a translucent part or a force shielding part (the pattern region Classified as the first attribute of PA1).
• the inspection condition of pattern area PA1 of reticle R1 can be changed according to the pattern area (referred to as PA2) of counterpart reticle R2.
• the analysis device 500 corresponds to the point, the point force of the pattern area PA2 of the reticle R2, the force that is the light transmitting part, the attribute of the area (this is the first attribute of the pattern area PA2) ), The attribute of whether the point is the adjacent area of the pattern (this is the second attribute of the pattern area PA2), the attribute of the type of the adjacent pattern (this is the second attribute of the pattern area PA2)
• the non-turn area PA1 is further divided by classifying it with 3 attributes) [0061] Rules applied in this classification will be described.
• the attribute (first attribute) of the pattern area PA1 of the reticle R1 is the translucent part
• the first attribute of the pattern area PA2 of the reticle R2 is the translucent part
• the second attribute is the proximity area
• the area that is outside is shown in Figure 6 (A).
• Figure 6 (A) For such an area, even if a minute foreign object (see Fig. 6 (A)) is attached to that area of reticle R1, the partial force that was not exposed due to the presence of the foreign object, etc.
• the exposure is performed by the exposure light transmitted through the light transmitting portion of the reticle R2), the influence of the foreign matter on the actual exposure result on the wafer W is considered to be relatively small. Therefore, for such a part, for example, it is desirable to set the allowable size of the foreign matter to be detected larger than the standard.
• the exposure amounts of the exposure lights IL1 and IL2 are set on the assumption that both of the reticles Rl and R2 are light-transmitting portions. If the total amount of exposure falls to a level that cannot be ignored, some measure must be taken against foreign matter. In terms of its semantic power, the allowable size of foreign matter needs to be set appropriately in consideration of the overall exposure.
• the first attribute of pattern area PA1 of reticle R1 is a translucent part
• the first attribute of pattern area PA2 of partial force reticle R2 is the translucent part
• the second attribute is a pattern.
• the third attribute is a part corresponding to the part where the third attribute is a normal pattern
• region B is classified as region B.
• FIG. 6B shows a state corresponding to the proximity area of the normal pattern Ml on the foreign substance force pattern area PA2 attached on the pattern area PA1. In this area B, foreign objects are detected with high sensitivity.
• the first attribute of pattern area PA1 of reticle R1 is the translucent part
• the first attribute of pattern area PA2 of reticle R2 is the translucent part
• the second attribute is the proximity of the pattern.
• a region whose third attribute is a contact hole pattern is classified as region C.
• Fig. 6 (C) Shows the state corresponding to the proximity area (indicated by the broken line) of the contact hole pattern M2 on the pattern area PA1 of the foreign substance force adhering to the pattern area PA1. Even in such a region C, it is desirable to set a high detection sensitivity.
• the first attribute of pattern area PA1 of reticle R1 is the translucent part
• the first attribute of pattern area PA2 of reticle R2 is the translucent part
• the second attribute is the proximity of the pattern.
• the region (the region on the right side of the broken line) whose third attribute is the phase shift pattern is classified as region D.
• FIG. 6 (D) shows that the foreign matter adhering to the noturn region PA1 exists in the region corresponding to the proximity region of the phase shift pattern M3 on the noturn region PA2, that is, the region D. Even in such a region D, it is desirable to set the detection sensitivity to high sensitivity.
• the first attribute of pattern area PA1 of reticle R1 is the translucent part
• the first attribute of pattern area PA2 of reticle R2 is the translucent part
• the second attribute is the proximity of the pattern. If it is a region and the third attribute is a portion corresponding to an OPC (Optical Proximity Correction) pattern, that region is classified as region E.
• Fig. 6 (E) shows that foreign matter attached to the pattern area PA1 is present in the area corresponding to the proximity area (the area to the right of the broken line) of the OPC pattern M4 on the pattern area PA2. Yes. It is desirable to set such a region E to be detected with high sensitivity.
• FIG. 7 shows a table summarizing the rules (1) to (7). Note that the detection sensitivity of the regions B to E and the allowable sizes of the regions A, F, and G can be set independently, and can be individually changed depending on the size of the proximity pattern.
• analysis apparatus 500 calculates the flatness difference between pattern area PA1 and pattern area PA2 based on the surface shape data of reticles Rl and R2 obtained in step 202. Then, in the region where the flatness difference exceeds a predetermined value, the inspection data sampling resolution is set high so that the inspection can be performed.
• the inspection data sampling resolution can be adjusted by changing the setting of the number of pixels (imaging magnification), etc., in the case of inspection by imaging, and in the case of inspection by laser scanning, the laser can be adjusted. It can be adjusted according to the scanning speed of light and the feed speed of Z or reticle.
• Analysis apparatus 500 sends a processing start command including data relating to this inspection condition map to reticle measurement / inspection instrument 130 (step 303).
• Reticle measurement / inspection instrument 130 is waiting to receive a command, and upon receiving this command, the process proceeds to step 304.
• step 304 reticle measurement / inspection instrument 130 inspects the pattern forming surface of reticle R1.
• defect inspection is performed under inspection conditions according to the inspection condition map created in step 302.
• the inspection condition map the pattern area PA1 of the reticle R1 is classified into the areas A to G, and the inspection conditions, that is, the inspection sensitivity, the inspection data sampling resolution, and the foreign matter are classified for each area. Inspect the pattern area PA1 while changing the allowable size.
• the inspection data of the light shielding portion in the pattern region PA1 of the reticle R1 and the pattern region PA2 of the reticle R2 is acquired, and the pattern region PA1 of the reticle R1 and Acquire inspection data of translucent part in pattern area PA2 of reticle R2.
• reticle measurement / inspection instrument 130 sends defect inspection result data to analysis apparatus 500.
• the analysis apparatus 500 waits for reception of defect inspection data, and when this data is received, the process proceeds to step 307.
• the analysis apparatus 500 analyzes the inspection result.
• the analyzer 500 solves the defect inspection result data. Pray and analyze the presence of hard and soft defects in the pattern formation surface of reticle Rl, position coordinates, etc. Then, analysis apparatus 500 sets a mode for changing the reticle if a hard defect exists, and sets a mode for cleaning reticle R1 if a soft defect exists.
• step 309 analysis apparatus 500 notifies host 600 of the presence / absence of reticle change.
• the host 600 is waiting to receive this notification.
• step 311 it is determined whether a reticle change is required. If a hard defect exists and if this determination is affirmed, the process proceeds to step 313, where reticle Rl, Z, and Z or Store reticle R2 and reset the process for the replaced reticle. If this reset is performed, the processing is restarted from step 201 using two reticles newly selected as reticles Rl and R2. On the other hand, if it is determined in step 311 that no reticle change is necessary, the host 600 waits for reception again.
• analysis apparatus 500 proceeds from step 309 to step 317, and notifies reticle measurement / inspection instrument 130 of the presence / absence of adjustment of reticle R1.
• Reticle measurement / inspection instrument 130 is waiting to receive this notification, and upon receiving this notification, it proceeds to step 319.
• step 319 reticle measurement and inspection device 130 determines whether or not adjustment of reticle R1 is necessary. If it is determined that it is necessary, the determination is affirmed, and the process proceeds to step 321 to clean the reticle to remove the soft defect.
• analysis apparatus 500 proceeds to step 323 following step 317, and determines whether or not reticle change or reticle adjustment is performed. Only when this determination is denied, the process proceeds to step 325 to notify the host 600 of the normal end. After this notification or after affirmative determination in step 323, the process returns to the beginning and returns to the reception waiting state. On the other hand, the host 600 that has received the normal end notification proceeds to step 204 in FIG.
• step 204 reticle R2 is optimized in the same manner as in step 203 above.
• an inspection condition map of the pattern formation surface of the reticle R2 is created, and a defect inspection of the pattern formation surface of the reticle R2 directly connected to the yield is performed according to the inspection condition map. If there is a hard defect, the reticle is replaced, and if there is a soft defect, the reticle is cleaned.
• step 203 and 204 the transmittances of reticles Rl and R2 are also measured.
• the total exposure amount of the exposure light IL1 and IL2 reaching the wafer W is increased.
• the reticles Rl and R2 held on the stage of the reticle measuring and inspecting instrument 130 via the reticle holder RH are replaced with the reticle holder RH on the reticle stage RST.
• Load each of the above and prepare for measurement of reticle Rl, R2 alignment (reticle alignment) and baseline (distance between the alignment sensor (not shown) of OFAXIS and pattern center of reticle Rl, R2) Perform processing.
• the device pattern on the pattern forming surface of the reticles Rl and R2 can be superimposed on an arbitrary area on the wafer W aligned on the wafer stage WST.
• reticle measuring and inspecting instrument 130 When using reticle measuring and inspecting instrument 130 with reticle R1 and R2 held on reticle holder RH in the same orientation as on reticle stage RST, and capable of measuring and inspecting, as reticle measuring and inspecting instrument 130
• the reticle holder RH holding the reticle R1 and the reticle holder RH holding the reticle R2 can be loaded onto the reticle stage RST.
• processing for the wafer W is performed.
• a film is formed on the wafer in the CVD apparatus 910 (step 206)
• the wafer W is transferred to the CZD 110
• a resist is applied on the wafer in the CZD 110 (step 207).
• the resist applied on the wafer W is measured according to the total transmittance of the reticles Rl and R2 measured in advance in steps 203 and 204. It is possible to adjust the type and thickness of the dies.
• the wafer W is transferred to the wafer measurement / inspection instrument 120, and the wafer measurement / inspection instrument 120 performs pre-measurement / inspection processing such as measurement of the surface shape of the wafer W and inspection of foreign matter on the wafer (Ste 209).
• Measurement result of wafer measuring and inspecting instrument 120 i.e. Is sent to the exposure apparatus 100 and the analysis apparatus 500. This measurement result is used for focus control during scanning exposure in the exposure apparatus 100.
• the wafer is transferred to the exposure apparatus 100, and the exposure apparatus 100 performs an exposure process for transferring the circuit pattern on the reticles Rl and R2 onto the wafer W (step 211).
• exposure apparatus 100 patterns in illumination areas IAR1 and IAR2 with the exposure amount, synchronization accuracy, focus, and lens state following target values by exposure amount control system, stage control system, and lens control system. Force is projected onto the exposure area IA, and feedback control is performed such that the exposed surface of wafer W is positioned within the depth of focus of the projection optical system PL.
• the pattern power of reticles Rl and R2 is a multi-chip device pattern, the chip area corresponding to the abnormal part is blinded by the illumination system 10 and limited to the normal chip area. It may be possible to perform an exposure process.
• the wafer W is transferred to the CZD 110 and developed by the CZD 110 (Step 213).
• the development time of the wafer W can be adjusted according to the total amount of exposure expected from the transmittances of the reticles Rl and R2. That is, when the total exposure amount is less than the predetermined value, the development time may be set longer.
• post-measurement inspection processing such as measurement of the line width of the resist image, measurement of the line width of the device pattern transferred onto the wafer W, and pattern defect inspection is performed (step 215).
• the analysis device 500 analyzes the measurement inspection result. With reference to the measurement inspection result, it is confirmed whether or not the device pattern transferred and formed on the wafer W has a defect, and the correlation between the defect and the defect inspection of the reticles Rl and R2 is obtained. If it is confirmed, adjust the detection sensitivity set in advance to create an inspection condition map for detecting hard and soft defects on reticles Rl and R2, and the allowable size of foreign matter. .
• Wafer W is transferred from wafer measuring and inspecting instrument 120 to etching apparatus 920, etched in etching apparatus 920, impurity diffusion, wiring processing, film formation in CVD apparatus 910, and planarization in CMP apparatus 930 Then, ion implantation using the oxidation ion implantation apparatus 940 is performed as necessary (step 219). Even in etching, transmittance of reticles Rl and R2 The etching time of WENO and W can be adjusted according to the total amount.
• step 221 it is judged in the host 600 whether or not all the processes are completed and all the patterns are formed on the wafer (step 221). If this determination is denied, the process returns to step 206, and if affirmed, the process proceeds to step 223. In this way, a series of processes such as film formation 'resist application to etching' are repeatedly executed for the number of steps, whereby circuit patterns are stacked on the wafer W, and semiconductor devices are formed.
• the probing process (step 223) and the repair process (step 225) are executed in the device manufacturing apparatus group 900.
• step 223 when a memory failure is detected, in step 225, for example, a replacement process with a redundant circuit is performed.
• the portion where the line width abnormality on Weno and W occurs can be excluded from the processing target for the probing process and the repair process on a chip basis.
• dicing processing (step 227), packaging processing, and bonding processing (step 229) are executed, and the product chip is finally completed.
• the wafer post-measurement inspection process in step 215 may be performed after the etching in step 219.
• line width measurement is performed on the etching image on Ueno and W. It may be performed both after development and after etching. In this case, since the line width measurement is performed on both the resist image and the etching image, it is possible to detect the processing state of the etching process based on the difference between the measurement results. become able to.
• the defect inspection of one reticle used for exposure to the same region on the wafer W is performed in consideration of information related to the other reticle.
• the pattern transfer result on the actual wafer W is measured and inspected (step 215), and the inspection contents of the reticle measuring and inspecting instrument 130 are adjusted based on the measurement and inspection result. That is, the transfer result of the wafer W is correlated with the defect inspection of the reticles Rl and R2 performed in Step 202, Step 203, and Step 204, and the cause of the abnormality in the transfer result of the wafer W is determined by the reticle Rl and R2. If it is in the pattern, the defect inspection Adjust the inspection sensitivity and threshold (that is, the inspection conditions shown in the inspection condition map). This makes it possible to optimize the inspection conditions so that only defects that actually affect the yield are detected. In particular, the more complicated the pattern on the reticle, such as the presence of OPC patterns or phase shift patterns, in the pattern area of reticles Rl and R2, the more the exposure result will be reflected in those inspection conditions. Becomes more important.
• the defect of the light transmitting part has a larger influence on the device yield than the defect of the 1S light shielding part. Inspect for more precisely. This enables defect inspection so that only defects that affect device production yield are detected.
• the transmission of the noturn is made at the position on the other reticle corresponding to the specific position of the light transmitting portion in the pattern region.
• the processing contents of the defect inspection are changed, such as changing the detection sensitivity and the allowable size of the foreign matter. In this way, it becomes possible to more precisely inspect the portion of the wafer W that has a large influence on the exposure result, and it becomes possible to perform defect inspection that detects only defects that affect the yield of device production. .
• an inspection condition map is created in accordance with information related to the pattern on the other reticle, and defect detection sensitivity is controlled.
• defect detection sensitivity is set high. In this way, it is possible to inspect a portion having a large influence on the exposure result of the wafer W with higher sensitivity, and thereby it is possible to perform a defect inspection that detects only defects that affect the yield of device production.
• the inspection result data of the light transmitting part is output to the analysis apparatus 500 (step 305). Then, the relationship between the size of the detected foreign matter and its allowable size is changed according to the information on the pattern of the other reticle. In this way, the allowable size differs between the part where the influence of foreign matter on the exposure result of the wafer W is large and the part where the influence is small, thereby increasing the yield of device production. Only the affected foreign matter can be detected.
• the inspection data sampling resolution of the other pattern is changed according to the information related to one pattern. In this way, it becomes possible to more precisely inspect the portion of wafer W that has a large effect on the exposure results, and this enables defect inspection that detects only defects that have an impact on device production yield. Become.
• the foreign matter attached to the light transmitting portion of the pattern on the reticle is detected, and the foreign matter attached to the light shielding portion of the reticle is detected.
• the foreign matter adhering to the light shielding portion does not affect the exposure result of the wafer W as it is, but the foreign matter may move to the translucent portion during reticle transport. It is desirable to detect a foreign substance of a certain size.
• the inspection result data of the light shielding part that is not only the translucent part is also output to the analysis apparatus 500 (step 30 5 ).
• the output content is changed according to the size of the detected foreign matter. In this way, it is possible to detect defects that are directly related to the yield of device production by making the inspection contents (for example, allowable size) different between the part where the influence of the exposure on the exposure result of the wafer W is small and the part where the foreign substance is small. Become.
• the optical proximity correction pattern, the phase shift pattern, and the contact hole pattern are located in the vicinity of the position on the other reticle R2, R1 corresponding to the specific position in the pattern of the reticles Rl, R2.
• the processing contents of the defect inspection relating to a specific position in the pattern are changed. In this way, the influence of the foreign matter on the exposure result of the wafer W is great, as is the proximity of each pattern!
• the inspection content (inspection sensitivity) differs between the / area and defects that are directly related to the yield of device production can be detected.
• the inspection conditions are optimized in advance based on the information of the other party's reticle.
• the inspection is performed under uniform inspection conditions, and the detected defect is directly connected to the device. Whether the force is a defect or not may be determined using information on the reticle of the other party.
• the other corresponding to a specific position in the pattern of one reticle Depending on the difference in surface shape from the position on the reticle, the details of the defect inspection process for a specific position in the pattern are changed. In this way, the influence of the foreign matter on the exposure result of the wafer W is large! /, The difference in flatness is large! /, And the portion is small! /,
• the inspection content (for example, inspection data sampling resolution) This makes it possible to detect defects that are directly related to device production yield.
• the total amount of exposure light IL1 and IL2 total amount of light
• the output content of the measurement inspection result is changed according to the total light amount of the exposure light IL1 and IL2. In this way, the output of the measurement / inspection results can be made different according to the total amount of exposure light IL1 and IL2, and the measurement / inspection can be directly linked to the device production yield.
• another reticle R2 different from the reticle R1 is measured in accordance with the information about the pattern formed on the reticle R1 arranged on the optical path of each of the exposure light IL1 and IL2. Based on the result of the inspection processing, the exposure processing of the wafer W is controlled. In this way, exposure processing can be controlled based on information on all reticles used for exposure, which in turn enables high-precision and high-throughput exposure, improving device production yield. To do.
• the exposure surface of the wafer W is irradiated with a plurality of exposure lights IL1 and IL2, on the optical path of each of the plurality of exposure lights IL1 and IL2.
• the other reticle is inspected for defects according to the information about the pattern formed on one of the reticles R1 and R2 placed on the reticle. In this way, it is possible to perform reticle defect inspection that is directly related to the yield of device production, taking into consideration the overall exposure state on the actual wafer W that is exposed in the exposure state using individual reticles.
• the reticle when a defect of a reticle that affects the yield is detected in consideration of the combination with the reticle of the other party, if the defect is a soft defect, the reticle is detected. Clean or replace the reticle if the defect is a hard defect. In this way, appropriate measures can be taken against various reticle defects. It can be applied, and the yield of device production can be improved.
• the two reticles used for exposure are both glass reticles, but either one of reticle R1 and reticle R2 is a liquid crystal capable of changing the pattern formed thereon. If an electronic mask such as a plate is used, the yield of device production can be further improved.
• the light shielding part is changed to the light transmitting part. be able to.
• the point on the exposed surface of the wafer W corresponding to the point where the foreign substance exists is exposed by the exposure light through the electronic mask, and the reticle depends on the size of the foreign substance. This is advantageous in terms of throughput.
• the total exposure amount in which the transmittances of the reticles Rl and R2 are low as a whole is too weak, it is formed in the pattern region of the glass reticle.
• the same pattern as the pattern (for example, a contact hole pattern or a fine line pattern) may be formed on the electronic mask. In this way, even if the overall exposure amount is too weak, the pattern can be transferred and formed in a clear state on the exposed surface of the wafer W.
• the pattern area of one reticle and the pattern area of the other reticle are classified into several areas. Then, the defect inspection of the pattern area was performed for each classified area while changing the inspection conditions.
• the present invention is not limited to this.
• the detected event is considered in consideration of information related to the other pattern area. It may be determined whether it is considered abnormal or not abnormal.
• the analysis apparatus 500 and the reticle measurement / inspection instrument 130 are individually provided, but they may be integrated. That is, the function of the reticle measuring / inspecting instrument 130 force analyzing apparatus 500 may be provided.
• a force reflection type reticle using a transmission type reticle may be used.
• two reticles are used for one exposure process.
• Force One reticle having two pattern regions may be used.
• the exposure apparatus 100 that projects the pattern images of the two reticles Rl and R2 onto the wafer W via the same projection optical system PL is used.
• An exposure apparatus that projects two pattern images onto the wafer W via an optical system may be used.
• the exposure apparatus 100 is capable of simultaneous exposure of a device pattern to Ueno, force pattern transferred onto W by simultaneous double exposure of the pattern, simultaneous triple exposure, quadruple exposure, etc.
• an exposure apparatus may be used. In this case, it is desirable to consider information about all other reticles when performing defect inspection on one reticle.
• the exposure apparatus 100 uses an exposure apparatus that performs so-called multiple exposure in which a plurality of patterns are simultaneously exposed.
• the exposure apparatus 100 that performs multiple exposure by exchanging reticles as needed is also used.
• the invention can be adopted.
• the pattern in one pattern region may be a designed device pattern to be transferred and formed on the wafer W, and the pattern in the other pattern region may be an OPC pattern.
• the phase difference between the exposure light via the pattern in one pattern area and the exposure light via the pattern in the other pattern area is 180 °, and the phase difference between the exposure light via both reticles is set to 180 °. It is also possible to design such that the phase shift effect is realized.
• phase difference of light through each reticle must be as designed (for example, 180 °). It is desirable that the phase difference can be measured. In this case, it is sufficient to measure and inspect the phase difference between the shifters of individual patterns using a Matsuno, Zuender interferometer, etc., and confirm that the phase difference between the shifters is as designed.
• the present invention is not limited to the type of exposure apparatus.
• a wafer stage for holding a wafer W, a reference member on which a reference mark is formed, and Z or various photoelectric sensors The present invention can also be applied to an exposure apparatus provided with a measurement stage equipped with the above.
• the step 'and' scan type projection exposure apparatus has been described.
• the present invention includes a step 'and' repeat type and proximity type exposure apparatus. Needless to say, it can also be applied to other exposure apparatuses.
• the present invention can also be suitably applied to a step-and-stitch reduction projection exposure apparatus that combines a shot area and a shot area.
• the various devices are not limited to those types.
• the present invention can also be applied to a twin stage type exposure apparatus having two wafer stages as disclosed in, for example, pamphlet of International Publication No. W098Z24115 and pamphlet of International Publication No. WO98Z40791.
• the present invention can also be applied to an exposure apparatus using a liquid immersion method disclosed in, for example, International Publication No. WO99Z49504.
• a force that employs an exposure apparatus that locally fills the liquid between the projection optical system and the substrate is disclosed in JP-A-6-124873, JP-A-10-303114, US Pat.
• the present invention is also applicable to an immersion exposure apparatus that performs exposure in such a state that the entire exposed surface of a substrate to be exposed is immersed in a liquid as disclosed in the specification of US Pat. No. 5,825,043.
• the present invention is not limited to a semiconductor manufacturing process, and can be applied to a manufacturing process of a display including a liquid crystal display element.
• a manufacturing process of a display including a liquid crystal display element In addition to the process of transferring the device pattern onto the glass plate, the manufacturing process of the thin film magnetic head, and the manufacturing process of the imaging device (CCD, etc.), micromachine, organic EL, DNA chip, etc., the present invention is applied to all device manufacturing processes. Of course, can be applied.
• the measurement / inspection method, exposure method, device manufacturing method, measurement / inspection apparatus, exposure apparatus, and device manufacturing apparatus of the present invention include devices such as semiconductor devices such as IC and LSI, liquid crystal panels, CCDs, and thin film magnetic heads. Suitable for manufacturing.

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