TWI342038B - - Google Patents

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Publication number
TWI342038B
TWI342038B TW096113599A TW96113599A TWI342038B TW I342038 B TWI342038 B TW I342038B TW 096113599 A TW096113599 A TW 096113599A TW 96113599 A TW96113599 A TW 96113599A TW I342038 B TWI342038 B TW I342038B
Authority
TW
Taiwan
Prior art keywords
exposure
pattern
light
mask
reticle
Prior art date
Application number
TW096113599A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746259A (en
Inventor
Shinichi Okita
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200746259A publication Critical patent/TW200746259A/zh
Application granted granted Critical
Publication of TWI342038B publication Critical patent/TWI342038B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H10P72/0616—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW096113599A 2006-04-27 2007-04-18 Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus TW200746259A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006123123 2006-04-27

Publications (2)

Publication Number Publication Date
TW200746259A TW200746259A (en) 2007-12-16
TWI342038B true TWI342038B (enExample) 2011-05-11

Family

ID=38655378

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113599A TW200746259A (en) 2006-04-27 2007-04-18 Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus

Country Status (5)

Country Link
US (1) US7688436B2 (enExample)
JP (1) JP5057248B2 (enExample)
KR (1) KR101357960B1 (enExample)
TW (1) TW200746259A (enExample)
WO (1) WO2007125853A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5252249B2 (ja) * 2006-02-17 2013-07-31 株式会社ニコン デバイス製造処理方法
US8023102B2 (en) * 2008-04-18 2011-09-20 International Business Machines Corporation Test method for determining reticle transmission stability
KR101292570B1 (ko) * 2008-12-31 2013-08-12 엘지디스플레이 주식회사 액정표시장치의 변형 검사시스템
TWI488245B (zh) * 2009-05-19 2015-06-11 United Microelectronics Corp 檢測光阻圖案的方法
US8785085B2 (en) 2010-03-30 2014-07-22 Hoya Corporation Method of manufacturing a mask blank substrate, method of manufacturing a mask blank, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device
JP5742370B2 (ja) * 2011-03-29 2015-07-01 凸版印刷株式会社 マスク基板の製造方法
NL2009853A (en) 2011-12-23 2013-06-26 Asml Netherlands Bv Methods and apparatus for measuring a property of a substrate.
JP5797582B2 (ja) * 2012-02-24 2015-10-21 株式会社アドテックエンジニアリング 露光描画装置、プログラム及び露光描画方法
JP6200224B2 (ja) * 2012-09-13 2017-09-20 日本メクトロン株式会社 フォトマスク、フォトマスク組、露光装置および露光方法
JP6310263B2 (ja) * 2014-01-30 2018-04-11 株式会社ニューフレアテクノロジー 検査装置
WO2016139249A1 (en) * 2015-03-03 2016-09-09 Lutz Rebstock Inspection system
US9548274B1 (en) * 2015-11-20 2017-01-17 Taiwan Semiconductor Manufacturing Company Ltd. Reticle for non-rectangular die
EP3879345B1 (en) * 2016-10-21 2023-08-09 ASML Netherlands B.V. Methods of determining corrections for a patterning process
JP7262939B2 (ja) * 2018-07-20 2023-04-24 キヤノン株式会社 クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法
JP2020076609A (ja) * 2018-11-06 2020-05-21 キヤノン株式会社 異物検査装置、処理装置および物品製造方法
KR102160170B1 (ko) * 2018-11-21 2020-09-25 에스케이실트론 주식회사 웨이퍼 표면의 파티클 측정 장치 및 방법
JP7578531B2 (ja) * 2021-04-05 2024-11-06 信越化学工業株式会社 欠陥検査装置、欠陥検査方法及びフォトマスクブランクの製造方法
CN118732420B (zh) * 2024-08-30 2024-11-26 温州职业技术学院 一种曝光机的双面对位装置
CN119738419A (zh) * 2024-12-26 2025-04-01 合光光掩模科技(安徽)有限公司 光掩模版缺陷检测方法、系统及计算机可读介质

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NL8600639A (nl) * 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
JPH0528273A (ja) * 1991-05-13 1993-02-05 Nikon Corp 画像処理方法および装置
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Also Published As

Publication number Publication date
WO2007125853A1 (ja) 2007-11-08
KR101357960B1 (ko) 2014-02-03
KR20090009773A (ko) 2009-01-23
JPWO2007125853A1 (ja) 2009-09-10
US20070259290A1 (en) 2007-11-08
US7688436B2 (en) 2010-03-30
TW200746259A (en) 2007-12-16
JP5057248B2 (ja) 2012-10-24

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MM4A Annulment or lapse of patent due to non-payment of fees