TWI342038B - - Google Patents
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- Publication number
- TWI342038B TWI342038B TW096113599A TW96113599A TWI342038B TW I342038 B TWI342038 B TW I342038B TW 096113599 A TW096113599 A TW 096113599A TW 96113599 A TW96113599 A TW 96113599A TW I342038 B TWI342038 B TW I342038B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- pattern
- light
- mask
- reticle
- Prior art date
Links
- 238000007689 inspection Methods 0.000 claims description 165
- 238000000034 method Methods 0.000 claims description 114
- 238000005259 measurement Methods 0.000 claims description 111
- 238000004519 manufacturing process Methods 0.000 claims description 73
- 230000008569 process Effects 0.000 claims description 64
- 238000012545 processing Methods 0.000 claims description 51
- 238000001514 detection method Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000035945 sensitivity Effects 0.000 claims description 16
- 238000005286 illumination Methods 0.000 claims description 15
- 238000012360 testing method Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 241001377038 Dipturus trachyderma Species 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 100
- 230000007547 defect Effects 0.000 description 78
- 238000004458 analytical method Methods 0.000 description 20
- 238000004891 communication Methods 0.000 description 12
- 238000007726 management method Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 101100452002 Arabidopsis thaliana IAR1 gene Proteins 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000003467 diminishing effect Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101100041257 Chlorobaculum tepidum (strain ATCC 49652 / DSM 12025 / NBRC 103806 / TLS) rub2 gene Proteins 0.000 description 1
- 240000008620 Fagopyrum esculentum Species 0.000 description 1
- 235000009419 Fagopyrum esculentum Nutrition 0.000 description 1
- 208000001613 Gambling Diseases 0.000 description 1
- -1 Ion ions Chemical class 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 101100448377 Oryza sativa subsp. japonica GH3.3 gene Proteins 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 244000007853 Sarothamnus scoparius Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 101150069431 rbr-2 gene Proteins 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003307 slaughter Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Environmental & Geological Engineering (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006123123 | 2006-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200746259A TW200746259A (en) | 2007-12-16 |
| TWI342038B true TWI342038B (enExample) | 2011-05-11 |
Family
ID=38655378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096113599A TW200746259A (en) | 2006-04-27 | 2007-04-18 | Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7688436B2 (enExample) |
| JP (1) | JP5057248B2 (enExample) |
| KR (1) | KR101357960B1 (enExample) |
| TW (1) | TW200746259A (enExample) |
| WO (1) | WO2007125853A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5252249B2 (ja) * | 2006-02-17 | 2013-07-31 | 株式会社ニコン | デバイス製造処理方法 |
| US8023102B2 (en) * | 2008-04-18 | 2011-09-20 | International Business Machines Corporation | Test method for determining reticle transmission stability |
| KR101292570B1 (ko) * | 2008-12-31 | 2013-08-12 | 엘지디스플레이 주식회사 | 액정표시장치의 변형 검사시스템 |
| TWI488245B (zh) * | 2009-05-19 | 2015-06-11 | United Microelectronics Corp | 檢測光阻圖案的方法 |
| JP5296260B2 (ja) | 2010-03-30 | 2013-09-25 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP5742370B2 (ja) * | 2011-03-29 | 2015-07-01 | 凸版印刷株式会社 | マスク基板の製造方法 |
| NL2009853A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Methods and apparatus for measuring a property of a substrate. |
| JP5797582B2 (ja) * | 2012-02-24 | 2015-10-21 | 株式会社アドテックエンジニアリング | 露光描画装置、プログラム及び露光描画方法 |
| JP6200224B2 (ja) * | 2012-09-13 | 2017-09-20 | 日本メクトロン株式会社 | フォトマスク、フォトマスク組、露光装置および露光方法 |
| JP6310263B2 (ja) * | 2014-01-30 | 2018-04-11 | 株式会社ニューフレアテクノロジー | 検査装置 |
| JP6942634B2 (ja) * | 2015-03-03 | 2021-09-29 | レブストック，ルッツ | 点検システム |
| US9548274B1 (en) * | 2015-11-20 | 2017-01-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Reticle for non-rectangular die |
| US10877381B2 (en) * | 2016-10-21 | 2020-12-29 | Asml Netherlands B.V. | Methods of determining corrections for a patterning process |
| JP7262939B2 (ja) * | 2018-07-20 | 2023-04-24 | キヤノン株式会社 | クリーニング装置、インプリント装置、リソグラフィ装置、および、クリーニング方法 |
| JP2020076609A (ja) * | 2018-11-06 | 2020-05-21 | キヤノン株式会社 | 異物検査装置、処理装置および物品製造方法 |
| KR102160170B1 (ko) * | 2018-11-21 | 2020-09-25 | 에스케이실트론 주식회사 | 웨이퍼 표면의 파티클 측정 장치 및 방법 |
| JP7578531B2 (ja) * | 2021-04-05 | 2024-11-06 | 信越化学工業株式会社 | 欠陥検査装置、欠陥検査方法及びフォトマスクブランクの製造方法 |
| CN118732420B (zh) * | 2024-08-30 | 2024-11-26 | 温州职业技术学院 | 一种曝光机的双面对位装置 |
| CN119738419A (zh) * | 2024-12-26 | 2025-04-01 | 合光光掩模科技(安徽)有限公司 | 光掩模版缺陷检测方法、系统及计算机可读介质 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615463A (en) * | 1968-11-19 | 1971-10-26 | Ibm | Process of producing an array of integrated circuits on semiconductor substrate |
| DE2837590A1 (de) * | 1978-08-29 | 1980-03-13 | Ibm Deutschland | Verfahren zur schattenwurfbelichtung |
| JPH0648380B2 (ja) * | 1985-06-13 | 1994-06-22 | 株式会社東芝 | マスク検査方法 |
| NL8600639A (nl) * | 1986-03-12 | 1987-10-01 | Asm Lithography Bv | Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze. |
| JPH0528273A (ja) * | 1991-05-13 | 1993-02-05 | Nikon Corp | 画像処理方法および装置 |
| EP0553543B1 (en) | 1992-01-31 | 1997-12-29 | Mitsubishi Denki Kabushiki Kaisha | Phase shift mask and method for forming resist pattern using said mask |
| US5370975A (en) * | 1992-01-31 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Method for forming resist pattern |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP3409493B2 (ja) * | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
| US5838433A (en) * | 1995-04-19 | 1998-11-17 | Nikon Corporation | Apparatus for detecting defects on a mask |
| KR100206594B1 (ko) * | 1995-09-27 | 1999-07-01 | 김주용 | 반도체 소자의 공정 결함 검사방법 |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| JPH10209039A (ja) * | 1997-01-27 | 1998-08-07 | Nikon Corp | 投影露光方法及び投影露光装置 |
| JPH10223512A (ja) * | 1997-02-10 | 1998-08-21 | Nikon Corp | 電子ビーム投影露光装置 |
| US6262796B1 (en) | 1997-03-10 | 2001-07-17 | Asm Lithography B.V. | Positioning device having two object holders |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| US6757645B2 (en) * | 1997-09-17 | 2004-06-29 | Numerical Technologies, Inc. | Visual inspection and verification system |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| JP4264676B2 (ja) | 1998-11-30 | 2009-05-20 | 株式会社ニコン | 露光装置及び露光方法 |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2001047600A (ja) * | 1999-08-10 | 2001-02-20 | Fuji Mach Mfg Co Ltd | マスク印刷方法およびマスク印刷装置 |
| JP2001174977A (ja) | 1999-12-20 | 2001-06-29 | Nec Corp | 露光パターン及び露光原版の検査方法 |
| US6701004B1 (en) * | 1999-12-22 | 2004-03-02 | Intel Corporation | Detecting defects on photomasks |
| JP2001250756A (ja) | 2000-03-03 | 2001-09-14 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6404481B1 (en) * | 2000-05-25 | 2002-06-11 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Adaptive lithography membrane masks |
| DE10103958C1 (de) * | 2001-01-30 | 2002-05-29 | Infineon Technologies Ag | Verfahren zur Inspektion von Defekten auf einer Maske |
| JP4104840B2 (ja) * | 2001-08-23 | 2008-06-18 | 株式会社東芝 | マスクパターン評価システム及びその方法 |
| JP2004012779A (ja) * | 2002-06-06 | 2004-01-15 | Sony Corp | マスクの検査方法およびマスク欠陥検査装置 |
| JP2004191297A (ja) | 2002-12-13 | 2004-07-08 | Sony Corp | マスク検査方法および検査装置 |
-
2007
- 2007-04-18 TW TW096113599A patent/TW200746259A/zh not_active IP Right Cessation
- 2007-04-20 US US11/785,865 patent/US7688436B2/en not_active Expired - Fee Related
- 2007-04-23 WO PCT/JP2007/058716 patent/WO2007125853A1/ja not_active Ceased
- 2007-04-23 JP JP2008513187A patent/JP5057248B2/ja not_active Expired - Fee Related
- 2007-04-23 KR KR1020087017940A patent/KR101357960B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5057248B2 (ja) | 2012-10-24 |
| WO2007125853A1 (ja) | 2007-11-08 |
| US7688436B2 (en) | 2010-03-30 |
| KR20090009773A (ko) | 2009-01-23 |
| JPWO2007125853A1 (ja) | 2009-09-10 |
| KR101357960B1 (ko) | 2014-02-03 |
| TW200746259A (en) | 2007-12-16 |
| US20070259290A1 (en) | 2007-11-08 |
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