DE69223759T2 - Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske - Google Patents

Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske

Info

Publication number
DE69223759T2
DE69223759T2 DE69223759T DE69223759T DE69223759T2 DE 69223759 T2 DE69223759 T2 DE 69223759T2 DE 69223759 T DE69223759 T DE 69223759T DE 69223759 T DE69223759 T DE 69223759T DE 69223759 T2 DE69223759 T2 DE 69223759T2
Authority
DE
Germany
Prior art keywords
mask
creating
phase shift
resist pattern
shift mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223759T
Other languages
English (en)
Other versions
DE69223759D1 (de
Inventor
Mitsunori Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69223759D1 publication Critical patent/DE69223759D1/de
Application granted granted Critical
Publication of DE69223759T2 publication Critical patent/DE69223759T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69223759T 1992-01-31 1992-10-12 Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske Expired - Fee Related DE69223759T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4623792 1992-01-31

Publications (2)

Publication Number Publication Date
DE69223759D1 DE69223759D1 (de) 1998-02-05
DE69223759T2 true DE69223759T2 (de) 1998-04-23

Family

ID=12741522

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223759T Expired - Fee Related DE69223759T2 (de) 1992-01-31 1992-10-12 Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske

Country Status (3)

Country Link
EP (1) EP0553543B1 (de)
JP (1) JPH05273739A (de)
DE (1) DE69223759T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2968674B2 (ja) * 1993-11-22 1999-10-25 日本電気株式会社 位相シフト方式フォトマスク
US5523580A (en) * 1993-12-23 1996-06-04 International Business Machines Corporation Reticle having a number of subfields
JP2001183806A (ja) 1999-12-24 2001-07-06 Nec Corp 露光方法および位相シフトマスク
TW200746259A (en) * 2006-04-27 2007-12-16 Nikon Corp Measuring and/or inspecting method, measuring and/or inspecting apparatus, exposure method, device manufacturing method, and device manufacturing apparatus
CN102468209B (zh) * 2010-11-19 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt的埋层形成方法
CN103345118A (zh) * 2013-07-05 2013-10-09 深圳市华星光电技术有限公司 光罩、玻璃基板及其制造方法
JP6315033B2 (ja) * 2016-07-09 2018-04-25 大日本印刷株式会社 フォトマスク
CN114137792A (zh) * 2021-10-29 2022-03-04 中国科学院微电子研究所 一种掩模参数优化方法及装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2862183B2 (ja) * 1989-04-28 1999-02-24 富士通株式会社 マスクの製造方法
EP0401795A3 (de) * 1989-06-08 1991-03-27 Oki Electric Industry Company, Limited Phasenverschiebungs-Photomaske für negative Lacke und Verfahren zur Herstellung von isolierten negativen Resistbildern mit dieser Phasenverschiebungsmaske
EP0730200A3 (de) * 1990-01-12 1997-01-22 Sony Corp Phasenverschiebungsmaske und Verfahren zur Herstellung
JP2566048B2 (ja) * 1990-04-19 1996-12-25 シャープ株式会社 光露光用マスク及びその製造方法
JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
TW198129B (de) * 1990-06-21 1993-01-11 Matsushita Electron Co Ltd
JP3036085B2 (ja) * 1990-12-28 2000-04-24 富士通株式会社 光学マスクとその欠陥修正方法
KR940005606B1 (ko) * 1991-05-09 1994-06-21 금성일렉트론 주식회사 측벽 식각을 이용한 위상 반전 마스크 제조방법

Also Published As

Publication number Publication date
DE69223759D1 (de) 1998-02-05
EP0553543A1 (de) 1993-08-04
JPH05273739A (ja) 1993-10-22
EP0553543B1 (de) 1997-12-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee