DE69622438T2 - Phasenverschiebungsmaske und Verfahren zur Herstellung einer solchen Maske - Google Patents

Phasenverschiebungsmaske und Verfahren zur Herstellung einer solchen Maske

Info

Publication number
DE69622438T2
DE69622438T2 DE69622438T DE69622438T DE69622438T2 DE 69622438 T2 DE69622438 T2 DE 69622438T2 DE 69622438 T DE69622438 T DE 69622438T DE 69622438 T DE69622438 T DE 69622438T DE 69622438 T2 DE69622438 T2 DE 69622438T2
Authority
DE
Germany
Prior art keywords
mask
making
phase shift
shift mask
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69622438T
Other languages
English (en)
Other versions
DE69622438D1 (de
Inventor
Shuji Nakao
Kouichirou Tsujita
Tatsunori Kaneoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69622438D1 publication Critical patent/DE69622438D1/de
Application granted granted Critical
Publication of DE69622438T2 publication Critical patent/DE69622438T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Elements Other Than Lenses (AREA)
DE69622438T 1996-05-15 1996-10-23 Phasenverschiebungsmaske und Verfahren zur Herstellung einer solchen Maske Expired - Fee Related DE69622438T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12005296A JPH09304912A (ja) 1996-05-15 1996-05-15 位相シフトマスク、位相シフトマスク用ブランクスおよび位相シフトマスクの製造方法

Publications (2)

Publication Number Publication Date
DE69622438D1 DE69622438D1 (de) 2002-08-22
DE69622438T2 true DE69622438T2 (de) 2003-02-20

Family

ID=14776707

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69622438T Expired - Fee Related DE69622438T2 (de) 1996-05-15 1996-10-23 Phasenverschiebungsmaske und Verfahren zur Herstellung einer solchen Maske
DE69606979T Expired - Fee Related DE69606979T2 (de) 1996-05-15 1996-10-23 Phasenverschiebungsmaske, Rohteil für eine solche Maske und Verfahren zur Herstellung einer solchen Maske

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69606979T Expired - Fee Related DE69606979T2 (de) 1996-05-15 1996-10-23 Phasenverschiebungsmaske, Rohteil für eine solche Maske und Verfahren zur Herstellung einer solchen Maske

Country Status (6)

Country Link
US (1) US5902702A (de)
EP (2) EP0807851B1 (de)
JP (1) JPH09304912A (de)
KR (1) KR100230714B1 (de)
DE (2) DE69622438T2 (de)
TW (1) TW337556B (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365654B (en) * 1997-07-01 1999-08-01 Matsushita Electronics Corp Electronic device phase shift mask and method using the same
EP1025711A1 (de) * 1997-10-31 2000-08-09 Daewoo Electronics Co., Ltd Verfahren zur herstellung einer dünnfilmbestätigten spiegelmatrix in einem optischen projektionssystem
US6045954A (en) * 1998-06-12 2000-04-04 Industrial Technology Research Institute Formation of silicon nitride film for a phase shift mask at 193 nm
KR100278996B1 (ko) * 1998-12-18 2001-02-01 김영환 반도체장치의 콘택 형성방법
KR100322537B1 (ko) 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
JP2001201842A (ja) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
JP2002009056A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 微細パターン形成方法およびその方法により製造した装置
US6395435B1 (en) 2000-06-27 2002-05-28 The United States Of America As Represented By The Secretary Of The Navy Photo-lithographic mask having total internal reflective surfaces
US6651313B1 (en) * 2000-10-06 2003-11-25 International Business Machines Corporation Method for manufacturing a magnetic head
AU2002220196A1 (en) * 2000-12-06 2002-06-18 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical-cavity surface-emitting laser (vcsel) arrays
US6724796B2 (en) 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
US6636544B2 (en) 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6649531B2 (en) 2001-11-26 2003-11-18 International Business Machines Corporation Process for forming a damascene structure
EP1857876A1 (de) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG Methode zur Herstellung einer Phasenschiebermaske
KR102115564B1 (ko) 2013-09-24 2020-05-27 삼성디스플레이 주식회사 표시기판 및 이를 포함하는 표시패널
JP6716629B2 (ja) * 2017-05-18 2020-07-01 エスアンドエス テック カンパニー リミテッド 位相反転ブランクマスク及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
DE59010548D1 (de) * 1990-04-09 1996-11-28 Siemens Ag Phasenmaske für die Projektionsphotolithographie und Verfahren zu deren Herstellung
JPH0468352A (ja) * 1990-07-10 1992-03-04 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスク及びその製造方法
JPH04147142A (ja) * 1990-10-09 1992-05-20 Mitsubishi Electric Corp フォトマスクおよびその製造方法
JP3036085B2 (ja) * 1990-12-28 2000-04-24 富士通株式会社 光学マスクとその欠陥修正方法
JPH04365044A (ja) * 1991-06-11 1992-12-17 Toppan Printing Co Ltd 位相シフト用マスクブランクおよび位相シフトマスクの製造方法
US5272024A (en) * 1992-04-08 1993-12-21 International Business Machines Corporation Mask-structure and process to repair missing or unwanted phase-shifting elements
JP3228354B2 (ja) * 1992-09-11 2001-11-12 凸版印刷株式会社 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクブランクの製造方法
JP3322284B2 (ja) 1993-08-31 2002-09-09 凸版印刷株式会社 位相シフトマスク及びその製造方法
JPH0792655A (ja) * 1993-09-28 1995-04-07 Toppan Printing Co Ltd 光学マスクとマスクブランクおよびそれらの製造方法
JPH07159971A (ja) 1993-12-06 1995-06-23 Toppan Printing Co Ltd 光学マスクブランクと光学マスクおよびそれらの製造方法

Also Published As

Publication number Publication date
EP0922997A1 (de) 1999-06-16
DE69606979T2 (de) 2000-07-20
DE69606979D1 (de) 2000-04-13
DE69622438D1 (de) 2002-08-22
KR100230714B1 (ko) 1999-11-15
EP0807851B1 (de) 2000-03-08
KR970076063A (ko) 1997-12-10
US5902702A (en) 1999-05-11
JPH09304912A (ja) 1997-11-28
TW337556B (en) 1998-08-01
EP0807851A1 (de) 1997-11-19
EP0922997B1 (de) 2002-07-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee