DE69423686D1 - Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske und Verfahren zur Herstellung der Blankomaske - Google Patents

Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske und Verfahren zur Herstellung der Blankomaske

Info

Publication number
DE69423686D1
DE69423686D1 DE69423686T DE69423686T DE69423686D1 DE 69423686 D1 DE69423686 D1 DE 69423686D1 DE 69423686 T DE69423686 T DE 69423686T DE 69423686 T DE69423686 T DE 69423686T DE 69423686 D1 DE69423686 D1 DE 69423686D1
Authority
DE
Germany
Prior art keywords
phase shift
blank
halftone phase
mask
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69423686T
Other languages
English (en)
Other versions
DE69423686T2 (de
Inventor
Hiroyuki Miyashita
Hiroshi Mohri
Masahiro Takahashi
Naoya Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Mitsubishi Electric Corp
Original Assignee
Dai Nippon Printing Co Ltd
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8948894A external-priority patent/JPH07295203A/ja
Priority claimed from JP10520994A external-priority patent/JP3262303B2/ja
Application filed by Dai Nippon Printing Co Ltd, Mitsubishi Electric Corp filed Critical Dai Nippon Printing Co Ltd
Publication of DE69423686D1 publication Critical patent/DE69423686D1/de
Application granted granted Critical
Publication of DE69423686T2 publication Critical patent/DE69423686T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69423686T 1993-08-17 1994-08-17 Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske und Verfahren zur Herstellung der Blankomaske Expired - Lifetime DE69423686T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20323493 1993-08-17
JP8948894A JPH07295203A (ja) 1994-04-27 1994-04-27 ハーフトーン位相シフトフォトマスク用ブランクスの製造方法
JP10520994A JP3262303B2 (ja) 1993-08-17 1994-05-19 ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス

Publications (2)

Publication Number Publication Date
DE69423686D1 true DE69423686D1 (de) 2000-05-04
DE69423686T2 DE69423686T2 (de) 2000-07-27

Family

ID=27306126

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423686T Expired - Lifetime DE69423686T2 (de) 1993-08-17 1994-08-17 Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske und Verfahren zur Herstellung der Blankomaske

Country Status (4)

Country Link
US (2) US5738959A (de)
EP (1) EP0643331B1 (de)
KR (1) KR100311704B1 (de)
DE (1) DE69423686T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW270219B (de) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
KR0147493B1 (ko) * 1995-10-25 1998-08-01 김주용 하프톤 위상반전마스크 제조방법
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US6899979B1 (en) * 1998-07-31 2005-05-31 Hoyo Corporation Photomask blank, photomask, methods of manufacturing the same, and method of forming micropattern
JP4197378B2 (ja) * 1999-08-18 2008-12-17 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法
JP4328922B2 (ja) 1999-09-21 2009-09-09 信越化学工業株式会社 位相シフト型フォトマスク
KR20010070403A (ko) 2000-01-05 2001-07-25 카나가와 치히로 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상시프트 마스크의 제조 방법
KR20010082981A (ko) * 2000-02-22 2001-08-31 윤종용 ＣｒＡＩＯ(Ｎ)Ｆ를 위상 쉬프터 물질로서 사용한 위상쉬프트 마스크 및 그 제조방법
JP2001235849A (ja) * 2000-02-24 2001-08-31 Shin Etsu Chem Co Ltd 位相シフトマスク及びその製造方法
JP2001290257A (ja) * 2000-04-04 2001-10-19 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法
JP2001305713A (ja) * 2000-04-25 2001-11-02 Shin Etsu Chem Co Ltd フォトマスク用ブランクス及びフォトマスク
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US6524431B1 (en) * 2000-11-10 2003-02-25 Helix Technology Inc. Apparatus for automatically cleaning mask
US7027226B2 (en) 2001-09-17 2006-04-11 Euv Llc Diffractive optical element for extreme ultraviolet wavefront control
JP3711063B2 (ja) * 2001-11-08 2005-10-26 大日本印刷株式会社 防塵装置付きフォトマスク及びこれを用いた露光方法
US7008730B2 (en) 2003-01-07 2006-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Application of high transmittance attenuating phase shifting mask with dark tone for sub-0.1 micrometer logic device contact hole pattern in 193 NM lithography
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
KR101143005B1 (ko) * 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
JP2006292840A (ja) * 2005-04-06 2006-10-26 Advanced Lcd Technologies Development Center Co Ltd 露光方法及びハーフトーン型位相シフトマスク
JP4516560B2 (ja) * 2005-12-26 2010-08-04 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク
US7985513B2 (en) * 2008-03-18 2011-07-26 Advanced Micro Devices, Inc. Fluorine-passivated reticles for use in lithography and methods for fabricating the same
KR100940271B1 (ko) * 2008-04-07 2010-02-04 주식회사 하이닉스반도체 하프톤 위상반전마스크의 제조방법
US20110265874A1 (en) * 2010-04-29 2011-11-03 Primestar Solar, Inc. Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture
JP5516184B2 (ja) * 2010-07-26 2014-06-11 信越化学工業株式会社 合成石英ガラス基板の製造方法
CN104937490B (zh) * 2013-04-17 2019-08-13 爱发科成膜株式会社 相移掩膜的制造方法及相移掩膜
JP6722421B2 (ja) * 2014-04-04 2020-07-15 大日本印刷株式会社 位相シフトマスクおよびその製造方法
CN108345171B (zh) * 2018-02-11 2020-01-21 京东方科技集团股份有限公司 一种相移掩膜板的制作方法及相移掩膜板

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381426A (ja) * 1986-09-26 1988-04-12 Hoya Corp フオトマスクブランクとフオトマスク
JP2765016B2 (ja) * 1989-03-15 1998-06-11 凸版印刷株式会社 フオトマスクブランクおよびフオトマスク
JP3105234B2 (ja) * 1990-09-28 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US5380608A (en) * 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
US5419988A (en) * 1992-08-07 1995-05-30 Dai Nippon Printing Co., Ltd. Photomask blank and phase shift photomask

Also Published As

Publication number Publication date
KR100311704B1 (ko) 2001-12-15
US5738959A (en) 1998-04-14
US5916712A (en) 1999-06-29
KR950006959A (ko) 1995-03-21
EP0643331A2 (de) 1995-03-15
DE69423686T2 (de) 2000-07-27
EP0643331B1 (de) 2000-03-29
EP0643331A3 (de) 1996-09-18

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