DE69130518D1 - Maske mit Phasenschiebern und Verfahren zur Herstellung - Google Patents

Maske mit Phasenschiebern und Verfahren zur Herstellung

Info

Publication number
DE69130518D1
DE69130518D1 DE69130518T DE69130518T DE69130518D1 DE 69130518 D1 DE69130518 D1 DE 69130518D1 DE 69130518 T DE69130518 T DE 69130518T DE 69130518 T DE69130518 T DE 69130518T DE 69130518 D1 DE69130518 D1 DE 69130518D1
Authority
DE
Germany
Prior art keywords
manufacturing
phase shifter
shifter mask
mask
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69130518T
Other languages
English (en)
Other versions
DE69130518T2 (de
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69130518D1 publication Critical patent/DE69130518D1/de
Publication of DE69130518T2 publication Critical patent/DE69130518T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69130518T 1990-06-20 1991-06-18 Maske mit Phasenschiebern und Verfahren zur Herstellung Expired - Fee Related DE69130518T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16343490 1990-06-20

Publications (2)

Publication Number Publication Date
DE69130518D1 true DE69130518D1 (de) 1999-01-07
DE69130518T2 DE69130518T2 (de) 1999-04-22

Family

ID=15773821

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69130518T Expired - Fee Related DE69130518T2 (de) 1990-06-20 1991-06-18 Maske mit Phasenschiebern und Verfahren zur Herstellung

Country Status (4)

Country Link
US (2) US5276551A (de)
EP (1) EP0462560B1 (de)
KR (1) KR950000091B1 (de)
DE (1) DE69130518T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578402A (en) * 1990-06-21 1996-11-26 Matsushita Electronics Corporation Photomask used by photolithography and a process of producing same
DE69131497T2 (de) * 1990-06-21 2000-03-30 Matsushita Electronics Corp Photomaske, die in der Photolithographie benutzt wird und ein Herstellungsverfahren derselben
US5362940A (en) * 1990-11-09 1994-11-08 Litel Instruments Use of Fresnel zone plates for material processing
US6020950A (en) * 1992-02-24 2000-02-01 Nikon Corporation Exposure method and projection exposure apparatus
JP3333886B2 (ja) * 1992-09-17 2002-10-15 ミノルタ株式会社 ホログラフィ素子
US5403685A (en) * 1992-09-29 1995-04-04 Sharp Kabushiki Kaisha Lithographic process for producing small mask apertures and products thereof
US5300786A (en) * 1992-10-28 1994-04-05 International Business Machines Corporation Optical focus phase shift test pattern, monitoring system and process
US5403682A (en) * 1992-10-30 1995-04-04 International Business Machines Corporation Alternating rim phase-shifting mask
EP0637393B1 (de) * 1993-02-23 1999-04-21 Interuniversitair Micro-Elektronica Centrum Vzw Phasenstruktur um die optische aufloesung fuer ein beleuchtungssystem durch projektion zu erhoehen
JP3351485B2 (ja) * 1993-12-10 2002-11-25 富士通株式会社 位相シフトマスクの製造方法
US5532089A (en) * 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
KR0128827B1 (ko) * 1993-12-31 1998-04-07 김주용 위상반전마스크 제조방법
KR970005675B1 (en) * 1994-01-19 1997-04-18 Hyundai Electronics Ind Fabrication method of phase shift mask
KR0137977B1 (ko) * 1994-10-12 1998-06-15 김주용 위상반전마스크 및 그 제조방법
JPH08314116A (ja) * 1995-03-15 1996-11-29 Toshiba Corp 露光用マスク及びその製造方法
PT847757E (pt) * 1995-08-29 2005-06-30 Anges Mg Inc Medicamento que compreende o gene de hgf
JP3290861B2 (ja) * 1995-09-18 2002-06-10 株式会社東芝 露光用マスクとパターン形成方法
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5789117A (en) * 1996-12-02 1998-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transfer method for non-critical photoresist patterns
US6348288B1 (en) * 2000-04-17 2002-02-19 Taiwan Semiconductor Manufacturing Company Resolution enhancement method for deep quarter micron technology
US6395435B1 (en) 2000-06-27 2002-05-28 The United States Of America As Represented By The Secretary Of The Navy Photo-lithographic mask having total internal reflective surfaces
KR100374552B1 (ko) * 2000-08-16 2003-03-04 주식회사 하이닉스반도체 엘리베이티드 소스/드레인을 갖는 반도체 소자 제조방법
JP4149676B2 (ja) * 2001-02-05 2008-09-10 株式会社東芝 フォトマスクの修正方法
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7147974B2 (en) * 2003-10-14 2006-12-12 Micron Technology, Inc. Methods for converting reticle configurations
TWI259935B (en) * 2004-01-08 2006-08-11 Samsung Electronics Co Ltd Method of adjusting deviation of critical dimension of patterns
US7838178B2 (en) 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
US7970328B2 (en) * 2007-11-16 2011-06-28 Xerox Corporation System and method for preparing magnetic ink character recognition readable documents

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547546A (en) * 1966-05-04 1970-12-15 Sprague Electric Co Multiple image forming device
US4530736A (en) * 1983-11-03 1985-07-23 International Business Machines Corporation Method for manufacturing Fresnel phase reversal plate lenses
JPS60103308A (ja) * 1983-11-11 1985-06-07 Pioneer Electronic Corp マイクロフレネルレンズの製造方法
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
EP0395425B1 (de) * 1989-04-28 1996-10-16 Fujitsu Limited Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske

Also Published As

Publication number Publication date
KR920001633A (ko) 1992-01-30
EP0462560A1 (de) 1991-12-27
US5514498A (en) 1996-05-07
US5276551A (en) 1994-01-04
KR950000091B1 (ko) 1995-01-09
DE69130518T2 (de) 1999-04-22
EP0462560B1 (de) 1998-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee