JP4907125B2 - 蒸着システム用の基板ホルダ - Google Patents
蒸着システム用の基板ホルダ Download PDFInfo
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- JP4907125B2 JP4907125B2 JP2005238271A JP2005238271A JP4907125B2 JP 4907125 B2 JP4907125 B2 JP 4907125B2 JP 2005238271 A JP2005238271 A JP 2005238271A JP 2005238271 A JP2005238271 A JP 2005238271A JP 4907125 B2 JP4907125 B2 JP 4907125B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0231—Magnetic circuits with PM for power or force generation
- H01F7/0252—PM holding devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/04—Means for releasing the attractive force
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
関連出願のクロスリファレンス
本発明は、2004年8月20日出願の米国特許出願第60/603211号の優先権を主張する。本発明は、2004年10月19日出願の米国特許出願第10/968642号の一部継続出願である。事実上、これらを参照により本明細書に組み込む。
それぞれのスピンドル軸の回りで回転可能な少なくとも1つのスピンドルと、
各スピンドルの端部上の、装着表面を含むラッチと、
前記ラッチの装着表面に装着する解放可能な基板ホルダとを備え、前記基板ホルダは、ベースと、基板を支持するベースの端面に装着されたカバーとを含み、
このカバーは、基板を露出させるための開口と、ベースに押し付けて基板の縁部を保持するための、この開口を取り囲むリップと、漂遊コーティング材料からベースを保護するための、ベースの端面を覆う保護領域とを含み、
このカバーは、シート・メタルでできており、
このカバーは、前記ベースから取り外すために、前記ベースに解放可能に取り付けられる。
Claims (18)
- コーティング・システムのプロセス・チャンバ内に装着する基板支持体であって、
それぞれのスピンドル軸の回りで回転可能な少なくとも1つのスピンドルと、
各スピンドルの端部上にあり、磁気的に引きつけられるラッチ位置と磁化されない非ラッチ位置とを有する装着表面を含む磁気ラッチと、
前記ラッチが前記ラッチ位置にあるときに前記ラッチの前記装着表面に装着され、前記ラッチが前記非ラッチ位置にあるときに前記装着表面から解放できる解放可能な基板ホルダとを備え、前記基板ホルダは、ベースと、基板を支持する前記ベースの端面に装着されたカバーとを含み、
前記カバーは、前記基板を露出させるための開口と、前記ベースに押し付けて前記基板の縁部を保持するための、前記開口を取り囲むリップと、漂遊コーティング材料から前記ベースを保護するための、前記ベースの前記端面を覆う保護領域とを含み、
前記カバーは、シート・メタルでできており、
前記カバーは、前記ベースから取り外すために、前記ベースに解放可能に取り付けられている、基板支持体。 - 前記カバーは、漂遊コーティング材料から前記ベースを保護する前記中間領域からほぼ直角に延びる環状フランジをさらに備える、請求項1に記載の基板支持体。
- 前記環状フランジは、前記ベースの側壁に隣接して延びて、漂遊コーティング材料から前記側壁を保護する、請求項2に記載の基板支持体。
- 前記カバーを前記ベースに解放可能に取り付けるための、前記環状フランジから延びるクリップをさらに備える、請求項3に記載の基板支持体。
- 前記クリップと係合する第1位置と、前記クリップが解放される第2位置との間で移動可能な、前記ベース上を前後に移動するラッチ表面をさらに備える、請求項4に記載の基板支持体。
- 前記ラッチ表面は、ばねで偏倚されて前記第1位置に入る、請求項5に記載の基板支持体。
- 前記環状フランジは、前記基板ホルダを掴むのを容易にするために、前記カバーから離れるように外向きに延びる、請求項2に記載の基板支持体。
- 前記ベースは、リップ、中間領域、並びに、前記カバーの、前記リップの反対側の環状フランジ、前記中間領域および前記環状フランジを備え、前記ベースの前記リップおよび前記カバーの前記リップは、前記基板を受けるための環状スロットを形成し、前記ベースの前記環状フランジは、前記ラッチの側壁に隣接して延びて、漂遊コーティング材料から前記側壁を保護する、請求項7に記載の基板支持体。
- 前記ベースおよび前記カバーは実質的に同じ構造であり、そのため、前記基板ホルダをひっくり返して前記基板の両面をコーティングすることができる、請求項8に記載の基板支持体。
- 前記ベースの前記中間領域は、前記カバーの前記中間領域にスポット結合され、そのため、前記カバーを手動で取り外すことができる、請求項9に記載の基板支持体。
- 前記磁気ラッチは、前記ベースの前記中間領域を引きつける環状リムを備え、前記ベースの前記環状フランジは、前記環状リムの側壁に隣接して延びて、漂遊コーティング材料から前記環状リムの前記側壁を保護する、請求項1に記載の基板支持体。
- 各磁気ラッチは、第1部分および第2部分を含み、前記第2部分は、基板ホルダを引きつけるために永久磁石が前記装着表面を磁化する第1位置と、前記装着表面の磁化が解除される第2位置との間で前記第1部分に対して相対的に移動可能である、請求項1に記載の基板支持体。
- 前記第1部分はそれぞれ、前記装着表面と、前記永久磁石と整列する極とを備えるステータを含み、
前記第2部分はそれぞれ、前記永久磁石を備えるロータを含み、前記永久磁石が前記ステータの前記極と整列する前記第1位置と、前記永久磁石が前記ステータの前記極と整列せず、そのため前記ステータの磁化が解除される前記第2位置との間で回転する、請求項12に記載の基板支持体。 - 各磁気ラッチはさらに、各ロータを回転させるための、前記スピンドルを通って延びるアクチュエータを備える、請求項13に記載の基板支持体。
- 各ロータは、複数の永久磁石を含み、各ステータは、前記複数の永久磁石と整列する複数の極を含む、請求項13に記載の基板支持体。
- 各ロータは、各永久磁石の両側にロータ極を含み、前記ロータ極は、前記第1位置にあるときに、それぞれのステータ極と整列して前記装着表面を通る磁気回路を形成し、前記第2位置にあるときに、1つのステータ極と係合して前記永久磁石を短絡する、請求項15に記載の基板支持体。
- 前記カバーは、前記カバーへの漂遊コーティング材料の付着が促進されるように、スズ・メッキされた鋼を打ち抜いたシート・メタルからなる、請求項1に記載の基板支持体。
- 前記カバーの厚さは、最大0.015インチである、請求項1に記載の基板支持体。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60321104P | 2004-08-20 | 2004-08-20 | |
US60/603,211 | 2004-08-20 | ||
US10/968,642 | 2004-10-19 | ||
US10/968,642 US7785456B2 (en) | 2004-10-19 | 2004-10-19 | Magnetic latch for a vapour deposition system |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006057185A JP2006057185A (ja) | 2006-03-02 |
JP4907125B2 true JP4907125B2 (ja) | 2012-03-28 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005238257A Expired - Fee Related JP4790344B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の磁気ラッチ |
JP2005238271A Expired - Fee Related JP4907125B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の基板ホルダ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005238257A Expired - Fee Related JP4790344B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の磁気ラッチ |
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Country | Link |
---|---|
US (1) | US7790004B2 (ja) |
EP (2) | EP1630260B1 (ja) |
JP (2) | JP4790344B2 (ja) |
CN (2) | CN1737191B (ja) |
AT (1) | ATE516390T1 (ja) |
DK (1) | DK1630260T3 (ja) |
PL (1) | PL1630260T3 (ja) |
PT (1) | PT1630260E (ja) |
Families Citing this family (36)
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US7954219B2 (en) * | 2004-08-20 | 2011-06-07 | Jds Uniphase Corporation | Substrate holder assembly device |
DK1630260T3 (da) * | 2004-08-20 | 2011-10-31 | Jds Uniphase Inc | Magnetisk holdemekanisme til et dampudfældningssystem |
JP2006199998A (ja) * | 2005-01-20 | 2006-08-03 | Seiko Epson Corp | 成膜装置、成膜方法 |
DE102006032959B3 (de) * | 2006-07-17 | 2007-12-27 | JOH. WINKLHOFER & SÖHNE GMBH & Co. KG | Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern |
DE102006041137B4 (de) * | 2006-09-01 | 2015-02-12 | Carl Zeiss Vision Gmbh | Vorrichtung zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage, Verfahren zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage sowie deren Verwendung |
JP4941197B2 (ja) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
US7853475B2 (en) * | 2007-11-09 | 2010-12-14 | Motorola Mobility, Inc. | Intelligent advertising based on mobile content |
US8563407B2 (en) * | 2009-04-08 | 2013-10-22 | Varian Semiconductor Equipment Associates, Inc. | Dual sided workpiece handling |
US10550474B1 (en) | 2010-02-26 | 2020-02-04 | Quantum Innovations, Inc. | Vapor deposition system |
US10808319B1 (en) | 2010-02-26 | 2020-10-20 | Quantum Innovations, Inc. | System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms |
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2005
- 2005-08-11 DK DK05255001.9T patent/DK1630260T3/da active
- 2005-08-11 AT AT05255001T patent/ATE516390T1/de active
- 2005-08-11 EP EP05255001A patent/EP1630260B1/en not_active Not-in-force
- 2005-08-11 PT PT05255001T patent/PT1630260E/pt unknown
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- 2005-08-17 EP EP05255095A patent/EP1630261B1/en not_active Not-in-force
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- 2005-08-19 JP JP2005238271A patent/JP4907125B2/ja not_active Expired - Fee Related
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JP2006057185A (ja) | 2006-03-02 |
CN1737192B (zh) | 2010-12-01 |
JP2006057183A (ja) | 2006-03-02 |
EP1630260B1 (en) | 2011-07-13 |
CN1737192A (zh) | 2006-02-22 |
DK1630260T3 (da) | 2011-10-31 |
EP1630260A2 (en) | 2006-03-01 |
US7790004B2 (en) | 2010-09-07 |
EP1630260A3 (en) | 2008-11-05 |
EP1630261A2 (en) | 2006-03-01 |
JP4790344B2 (ja) | 2011-10-12 |
CN1737191B (zh) | 2011-12-14 |
US20060049044A1 (en) | 2006-03-09 |
ATE516390T1 (de) | 2011-07-15 |
PL1630260T3 (pl) | 2011-12-30 |
CN1737191A (zh) | 2006-02-22 |
EP1630261B1 (en) | 2012-09-19 |
PT1630260E (pt) | 2011-10-19 |
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