CN1737191A - 用于汽相淀积系统的衬底托架 - Google Patents
用于汽相淀积系统的衬底托架 Download PDFInfo
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Abstract
本发明涉及用于磁锁闩的部分地可用完即弃的衬底托架,以将衬底固定在行星式旋转平台上,所述行星式旋转平台悬挂在汽相淀积系统的真空腔中的涂料源上方,如化学汽相淀积(CVD)系统或物理汽相淀积(PVD)系统。所述衬底托架包括可以再度使用的底座和用完即弃的盖,所述底座至少部分地用铁磁材料形成并被吸引到所述磁锁闩,所述盖由相对便宜的铁磁性易于形成的材料形成、促使涂层材料的附着并具有在涂覆温度下的低汽相压力。
Description
交叉引用的相关申请
[01]本发明主张于2004年8月20日提交的美国专利申请No.60/603,211的优先权,并且是于2004年10月19日提交的美国专利申请No.10/968,642的部分延续,为了所有目的,这些专利申请都通过参考合并到本发明中。
技术领域
[02]本发明涉及一种用于汽相淀积系统的衬底托架,尤其涉及一种与磁锁闩一起使用的可部分用完即弃的衬底托架,所述磁锁闩将所述衬底托架悬挂在物理汽相淀积(PVD)系统或化学汽相淀积(CVD)系统的真空腔中。
背景技术
[03]多层精密涂层,如用于小型光学系统的多层精密涂层,一般在PVD或CVD系统中产生。许多这些涂层被涂覆在用薄的平盘形成的衬底上,然后将这些衬底切割成适当的尺寸。
[04]从PVD或CVD系统中的源流出的涂料流是相对稳定的;不过,它们具有一种空间分布,所述空间分布在衬底保持静止的情况下会导致淀积的膜具有不均匀的厚度。为了提高均匀度,所述源与所述衬底之间的几何关系必须进行适当的选择。在将所述衬底绕着垂直于要进行涂覆的表面的轴旋转时,尤其是在将多个衬底安装在行星结构中的多个心轴(spindle)上时,已观察到了良好的效果。
[05]为了实现可重复的厚度控制和低的缺陷数量,所述衬底托架必须将所述衬底相对于其它移动元件的位置进行精确定位,并将所述衬底牢固保持以免滑动,这种滑动可能会在加速或温度变化时产生颗粒污染。而且,支撑所述衬底的设备(所述夹具唇边)的表面必须抛光且必须非常地薄,以避免涂料流的阴影以非垂直的入射角到达。所述衬底的后表面必须得到屏蔽以免杂散涂层材料淀积在它的上面。
[06]为了满足这些苛刻的要求,用于大规模生产的衬底托架典型地用不锈钢甚至是硬化不锈钢制成,但不锈钢相对较贵且难以维护。邻接于所述衬底的表面与所述衬底一样暴露给相同的涂料流,如多层硬金属氧化物。可令人遗憾的是,所述衬底托架上的涂层随着每次涂层操作而聚积,而且,如果不清除,就会剥落成磨损微粒,这些磨损微粒能够导致对其后产品的损伤。清洁所述衬底托架通常要求喷钢砂处理或非常强烈的化学浸蚀,这些都需要在每次的涂层操作中重复,或者,如果要求非常少的缺陷,在每次涂层操作之后进行这样的处理。即便是硬化钢衬底托架也会快速磨损,从而导致所述衬底托架及其维护在所述涂层处理中占很高的成本,并且成为微粒导致的缺陷的主要来源。
[07]常规的行星齿轮涂膜系统,如在1992年4月21日发表的、专利权人为StefanLocher等人的美国专利No.5,106,346中所公开的行星齿轮涂膜系统,包括带有几个单独心轴(行星)的大的旋转平台,这些单独的心轴可在所述旋转平台上旋转并放置在密封的真空腔内。可令人遗憾的是,每个衬底托架必须连接到每个心轴上的安装盘上,这种安装利用机械固件进行,如螺栓,并要求手工置换。这些机械系统不仅要求额外的手工劳动,而且还更容易受到由温度和压力中的变化所导致的未对准的影响。
[08]为了将尽可能多的轴承和齿轮结构与所述真空腔隔离,Hurwitt等人在1998年8月18日发表的美国专利No.5,795,448中公开了一种行星齿轮涂膜系统,这种系统在每个心轴的轴中包括一种磁性连接。所述衬底托架并不悬挂在所述阴极上方,但仍需要使用机械固件来附着在所述心轴的安装盘上。
[09]在2002年10月15日发表的专利权人为Shinozaki的美国专利No.6,464,825中所公开的涂膜系统中,包括机器臂,所述机器臂在增压装载/卸载腔与所述主真空腔之间移动,以将进入所述主真空腔中的尘埃降到最低。所述Shinozaki系统还包括磁旋转驱动器和磁浮力构件,以将相互作用的机械元件所导致的微粒生成降到最小。不过,Shinozaki的专利公开了一种单独的旋转平台,所述旋转平台带有完全环绕所述衬底托架的复杂的浮力平台和电磁体。可令人遗憾的是,这种方法在行星齿轮涂膜系统中不可能实现,因为在真空和升高的温度条件下运行时难以将动力单独输送到行星系统中的个别的旋转衬底托架。
[10]本发明的一个目的在于通过提供一种衬底托架来克服现有技术中的缺陷,这种衬底托架具有可用完即弃的盖,所述盖可容易地从底座移开,并容易地拆去,以从所述衬底托架中将所述衬底取出。
发明简述
[11]相应地,本发明涉及一种用于安装在涂膜系统的处理腔中的衬底支撑,包括:
[12]至少一个心轴,所述心轴可围绕各自心轴的轴旋转;
[13]位于每个心轴的一端上的锁闩,所述锁闩包括安装表面;和
[14]用于安装在所述锁闩的安装表面上的可松开的衬底托架,所述衬底托架包括底座和安装在所述底座的一个端面上的用于支撑衬底的盖;
[15]其中所述盖包括暴露所述衬底的开口、包围所述开口以将所述衬底的边缘保持在所述底座的唇边、和覆盖所述底座的端面以保护所述底座不受杂散涂层材料的影响的保护区域;
[16]其中所述盖用片状金属制成;和
[17]其中所述盖可松开地附着于所述底座,从而可以从所述底座中移去。
附图简述
[18]在此将结合附图对本发明进行更详细的描述,这些附图表示本发明的优选实施例,在这些附图中:
[19]图1是根据本发明的涂膜系统的等轴测视图;
[20]图2是图1中的涂膜系统的等轴测视图,其中将某些外壁删去;
[21]图3是根据本发明的带有磁锁闩的行星式衬底托架的示意图;
[22]图4a到4c是根据本发明的磁锁闩的基本原理示意图;
[23]图5是根据本发明的磁锁闩的等轴测视图;
[24]图6a是图5中磁锁闩的定子的俯视图;
[25]图6b是图6a中定子的截面图;
[26]图7是图5中的磁锁闩在解锁位置的俯视图;
[27]图8a到8d是根据本发明的衬底托架的截面图;
[28]图9a是一种可供选择的衬底托架的截面侧视图;
[29]图9b是图9a中的衬底托架的俯视图;和
[30]图10是一种可供选择的衬底托架的截面侧视图。
发明详述
[31]参看图1到图3,根据本发明的汽相淀积真空系统,如物理汽相淀积(PVD)或化学汽相淀积(CVD),包括一般用1表示的预真空锁(load lock)腔和带有闸式阀3的处理腔2,所述闸式阀3位于所述预真空锁腔1与所述处理腔2之间。所述闸式阀3能够使所述预真空锁腔1中的压力达到大气压力以装载或卸载所述衬底,或者使所述预真空锁腔1中的压力重新恢复到所述处理腔2的压力以进行衬底的转移,而独立于所述处理腔2中的压力。所述预真空锁腔1包括在其内部带有盒式升降器5的装载容器4和在其内部带有机械臂7的转移通道6。所述机械臂7的控制装置安装在圆柱形罐8中,所述圆柱形罐8从所述转移通道6中伸出。
[32]阴极12和行星式衬底支撑件14安装在所述处理腔2中。所述行星式衬底支撑件14包括主圆柱形平台16,所述主圆柱形平台16可围绕第一轴旋转,所述心轴有多个,如六个心轴17,所述这些心轴17从所述支撑件伸出,每个心轴17可围绕各自的轴旋转,优选这些轴平行于所述第一轴,但也可以以其它的角度。在使用时,由于将所述主平台16旋转,所以每个单独的心轴17也被旋转,以保证在每个衬底的所有部分上的均匀涂覆。每个心轴17包括在其外自由端的磁锁闩18,以将衬底悬挂在所述阴极12上方,这一点将在下面进行描述。
[33]至少有一个阴极12,优选低电弧阴极,被安装在所述处理腔2内。可提供更多的阴极12,以在出现故障或一个阴极12中的涂料供应耗尽的情况下备用。作为选择,可提供儿个不同的阴极12,以使不同的涂料能够连续地淀积而并不将所述处理腔2打开而暴露在大气中。优选可通过手动或遥控装置移动安装盘(未示出)来将所述阴极12的位置进行微调。
[34]通过泵口22使所述处理腔2形成真空,同时通过质量流量控制器(mass flowcontrollers)(未示出)将处理气体提供给所述处理腔2。
[35]虽然在此对溅射淀积真空系统进行了描述,但根据本发明的行星式衬底支撑件可以同其它任何适当的涂膜系统一起使用,如蒸发系统或CVD系统。所述涂覆过程可通过另外的设备,如模板、掩模、离子轰击装置,以及先进的阳极概念或等离子激活系统进行改进。
[36]虽然此处所示出的涂膜系统是以向上溅射结构,但根据本发明的磁锁闩可以用其它的方向来使用,如向下涂覆和向侧面涂覆。
[37]在所述闸式阀3关闭的情况下将安装在衬底托架23中的未经涂覆的衬底装载到所述盒式升降器5上,这样就能够保持所述处理腔2中的压力。在将所述预真空锁腔1形成真空时,通往所述处理腔2的闸式阀打开,且所述机械臂7穿过所述转移通道6和通往所述处理腔2的打开的闸式阀3转移每个衬底托架23,以在所述磁锁闩18的帮助下,将所述衬底托架安装在所述心轴17上。
[38]所述磁锁闩18的基本原理在图4a到4c中示出,在这些图中,永磁体31置于解锁位置(图4a和4b)或锁定位置(图4c)。在图4a中,用箭头32表示的磁路通过旁路部分33来完成,而留下柱34a和34b未被磁化。在图4b中,将所述衬底托架23处于与所述柱34a和34b接触的位置,因此提供一种可供选择的磁路。为了完成在图4c中由箭头36表示的可供选择的磁路,使所述永磁体31旋转并与所述柱34a和34b成一直线,从而确保所述衬底托架23被所述柱34a和34b磁性吸引。作为选择,所述永磁体31可以保持不动,而将所述旁路部分33和所述柱34a和34b移动来与之对准和不对准。
[39]图5、图6a、图6b和图7所示的磁锁闩18的优选实施例包括圆柱形定子41,所述圆柱形定子41具有可在其上面旋转的圆柱形转子42。所述定子41包括三套定子柱43a和43b,所述定子柱43a和43b由多个机械固件,如六角螺栓固定到基座44,以保证良好接触。所述转子42包括三个径向延伸的永磁体47,所述永磁体47夹在转子柱48a和48b之间。所述永磁体的北磁极和南磁极沿着所述永磁体的长边延伸并分别邻接于所述转子柱48a和48b。每个磁锁闩18包括伸长的致动器49,所述伸长的致动器49向下延伸并穿过所述主平台16和每个心轴17,以从所述处理腔2的外部使转子42在所述锁定位置(图5)与所述解锁位置(图7)之间旋转。所述致动器49在其上端包括舌片或其它可接合结构,以接合位于所述行星式衬底支撑件之上的另一个机械装置,如轴50(图3)。在所述解锁位置,将两个转子柱48a和48b旋转并邻接于所述定子柱中的一个43b,从而使所述永磁体47短路,断开了穿过所述定子41的磁路,进而使所述定子41去磁并释放了所述衬底托架23。
[40]为了便于所述衬底托架23与所述定子41的准直,提供从所述基座44的中心伸出的锥形销51。在所述基座44的中心的单独的锥形销51提供一种准直装置,所述准直装置确保所述衬底托架23的正确准直而并不要求精确的角度方向。多个锥形销可位于沿所述定子的圆周的其它位置或其它径向位置。
[41]衬底托架23的例子在图8a到图8d中示出。图8a中的衬底托架23a包括固定在环盖54上的基座53,所述环盖54包括环肩56,以支撑单独的衬底57。在所述基座53中提供圆柱形凹槽55以接收所述锥形销51,这样就为所述锥形销提供了配合准直装置。所述基座53完全或至少部分地用由所述磁锁闩18所吸引的材料形成,如包括铁、钴和镍之中的一种或多种的铁磁材料。所述基座53还为所述衬底57的未经涂覆的侧面提供保护性覆盖,这样就避免了无意的和并不希望得到的反向涂覆。衬底托架23b(图8b)包括固定在所述基座53的多盘环盖58。所述多盘环盖58包括多个环肩59,以支撑多个较小的衬底61。对于异形衬底,如棱柱62,提供多棱柱盖63,以安装在所述基座53上,见图8c。
[42]作为所述基座53的另一种选择,用于吸引到所述定子41的铁磁环71围绕衬底72(图8d)。所述环71的好处在于,可以用相同的或不同的涂料在衬底的相对侧面进行涂覆,而并不将其从所述环71取下。而且,在处理不同涂料时,所述衬底72和环71并不需要从处理腔2取下,如简单地由所述机械臂7翻转。
[43]典型的衬底将会是直径为200mm、厚度为0.7到1.4mm的玻璃片;不过,其它的衬底形式也是可能的,如厚度可达32mm、重量可达2kg。
[44]参看图9a和9b,可用完即弃的盖75安装在底座76上,所述底座76像上面所述的那样完全或至少部分地用由所述磁锁闩18所吸引的材料形成,如包括铁、钴和镍之中的一种或多种的铁磁材料。所述底座76包括用于所述锥形销51的圆柱形凹槽77,且为所述衬底未被涂覆的侧面提供保护性覆盖,这样就避免了无意的和并不希望得到的反向涂覆。所述盖75包括用于衬底的一个或多个开口78,并限定了在每个开口78周围延伸的唇边79。每个唇边79将衬底的边缘保持在狭缝81中,所述狭缝81在所述底座76的上部面形成。所述这些开口78一般是圆形的,但根据所述衬底的形状,也可以是任何形状,如正方形或椭圆形。所述盖75还包括环形中间区域82,以确保所述底座76的上部面被覆盖,进而被保护而不受杂散涂层材料的影响。环状盘83从所述中间区域82垂直伸出并邻接于所述底座76的侧壁,以保护所述底座76的所述侧壁不受杂散涂层材料的影响。所述环状盘83的外自由端84向内向后弯曲并与所述环状盘83的其余部分平行,这样就形成接合闭锁表面88与所述底座76的夹片。作为选择,一个或多个分离的夹片可从所述盖75垂直伸出并与所述底座82上的闭锁表面88接合。优选所述这些夹片用弹性材料制成,如与所述盖75相同的片状金属,以使这些夹片和所述盖75能够相对容易地用手工松开,即,不需要使用工具。可提供各种各样的机械装置以便于这些夹片的分离,包括杠杆、按钮和从所述夹片伸出的旋钮。
[45]不过,在所示出的便于将所述盖75从所述底座76取下的实施例中,所述闭锁表面88放置在可移动的楔89上,在所述楔89上施加足够的力时,所述楔89就朝向所述底座76的中心往复移动,如径向移动,即朝向圆柱形凹槽77。螺纹固件91延伸并穿过所述楔82中的狭缝92而进入所述底座76中,以在所述往复移动期间引导所述楔89。弹簧93将所述楔89向外偏置并使其与所述环状盘83的外自由端84(夹片)接触,这样就提供一种设定的力,这种设定的力必须由手动来克服,以将所述盖75从所述底座76松开。
[46]图10所示的实施例包括改进的定子部分100,所述定子部分100由倒置杯形铁板所限定,所述铁板具有在边缘101周围的一连串交替的北磁极和南磁极。所述改进的定子部分100可以安装在现有的定子41上,或替代现有的定子41。转子142与致动器149一起提供,如在前面所描述的那样。可用完即弃的衬底托架103限定实质上呈圆形的开口104,在所述开口104中放置有一个衬底。所述衬底托架103由第一(底座)环105a和第二(盖)环105b形成,所述第一环和第二环分别在环状中间连接区域106a和106b处连接在一起。
[47]所述第一环和第二环105a和105b可用金属或塑料带、折叠拉环或其它的装置连接在一起。一种优选的方法是将所述第一环和第二环105a和105b在适当数量的点处进行“点粘合”,这些点位于在所述连接区域106a和106b中的所述第一环和第二环105a和105b的圆周附近。采用具有非常低的电流的点焊设备和技术的点粘合就可以提供足够的强度。粘合范围可以从仅熔化锡以制成“焊接”点到对所述母钢的完全点焊而连续变化。所述点焊设备的电流可以进行调节,以能够将所述第一环和第二环105a和105b牢固地保持在一起以便于操作,但也可以容易而轻柔地分开以将所述衬底取下,而并不需要重型工具或过多的力量。
[48]所述第一环和第二环104a和104b中的每一个分别包括环状唇边107a和107b,所述环状唇边107a和107b分别从所述连接区域106a和106b向内延伸,并限定环状狭缝108,所述环状狭缝108用于接收和夹持衬底的边缘。所述第一环和第二环105a和105b的外端弯曲并垂直于所述连接区域,这样就分别形成了法兰盘109a和109b。由于所述连接区域106a和106b覆盖所述边缘101的外部面,所以所述法兰盘109a沿着所述边缘101的侧面延伸,以屏蔽边缘101的所述侧面不受杂散涂层材料的影响,并避免杂散涂层材料在所述衬底托架103与所述边缘101之间移动而达到所述衬底的后表面。而且,所述法兰盘109a安装在所述边缘100的周围,以将所述衬底托架103置于所述磁锁闩18上的中心位置。所述法兰盘109b从所述连接区域106b向外延伸以便于抓紧,即通过机器或手工抓紧,以将所述衬底托架103从所述边缘101取下,并保护所述底座不受杂散涂层材料的影响。在一个优选实施例中,所述机械臂7包括环状接收表面,所述环状接收表面安装在所述法兰盘109b内,以在所述衬底托架103从所述磁锁闩18释放时接收所述衬底托架103。
[49]为了将成本降到最低并便于储存,所述第一环和第二环105a和105b相互之间是相同的;不过,所述第一环和第二环105a和105b也可以是不同的,例如是不对称的,以适合于具体的要求,如可在所述唇边107a和/或107b内形成特制的摩擦拉环以支撑不同的衬底。而且,所述环中的一个可以是平的环,即没有所述环状法兰盘或所述唇边。不过,若所述第一环和第二环105a和105b是相同的,那么就可容易地翻转所述衬底托架103以对所述衬底的相对侧面进行涂覆。打算进行翻转的所述第一环和第二环105a和105b必须都完全或至少部分地用由所述磁锁闩18所吸引的材料形成,如包括铁、钴和镍之中的一种或多种的铁磁材料。
[50]在图9和图10中所示出的衬底托架利用可用完即弃的盖75以及105b,这些盖75以及105b由并不昂贵的片状金属冲压制成,而且在使用一两次后可以不再使用。在加速度、振动和温度周期变化期间,这些盖75以及105b分别将所述衬底相对于所述底座76以及105a牢固而精确地保持。而且,这些盖75以及105b屏蔽所述底座76以及105a不受杂散涂料流的影响,否则,这些涂料流会淀积在所述底座76以及105a上,从而在剥落时导致对所述衬底的损伤。
[51]这些可用完即弃的盖75以及105b理想地是铁磁性的,以使它们能够由所述定子41或改进的定子部分100通过所述底座76和105b被磁性吸引,但盖75不必是铁磁性的,因为它被机械性地附在所述底座76上。而且,这些盖75以及105b应包括表面材料或表面特征,这些表面材料或表面特征促进杂散涂层材料的附着。所述这些盖75以及105b应并不昂贵、易于形成并具有足够的弹性,以在适当的时候提供弹力,且在涂料温度下具有低的汽相压力,并具有最低的有毒废物排出。在实践中,所述这些盖75以及105b的厚度可达0.030英寸,但优选可达0.025英寸或甚至可达仅仅0.020英寸。对于很小的衬底有可能有更薄的盖,即,优选在0.005英寸到0.015英寸之间。优选所述这些盖75以及105b用电镀锡钢(镀锡钢板)制成,这种材料相对便宜、具有磁性且易于制造。所述镀锡钢板在涂覆温度下具有低的汽相压力(在232.06℃时为5.78E-21Pa),这种低的汽相压力将从所述这些盖75以及105b所释放的任何材料降到最少,以免污染所述衬底,并为大多数金属和金属氧化物提供较好的附着力,从而杂散涂层材料就会附着在所述这些盖75以及105b上而不是偏离到所述衬底上。对高于锡的熔点(232℃)的涂覆应用来讲,其它的片状金属也可以使用,如铝和不锈钢。可能需要表面处理来提高铝和不锈钢的附着性能。
Claims (20)
1.一种用于安装在涂膜系统的处理腔中的衬底支撑,包括:
至少一个心轴,所述心轴可围绕各自心轴的轴旋转;
位于每个心轴的一端上的锁闩,所述锁闩包括安装表面;和
用于安装在所述锁闩的安装表面上的可松开的衬底托架,所述衬底托架包括底座和安装在所述底座的一个端面上的用于支撑衬底的盖;
其中所述盖包括暴露所述衬底的开口、包围所述开口以将所述衬底的边缘保持在所述底座的唇边,和覆盖所述底座的端面以保护所述底座不受杂散涂层材料的影响的保护区域;
其中所述盖用片状金属制成;和
其中所述盖可松开地附着于所述底座,从而可以从所述底座中移去。
2.如权利要求1所述的衬底支撑,其特征在于,所述盖还包括环状盘,所述环状盘从所述中间区域实质上垂直伸出,以保护所述底座不受杂散涂层材料的影响。
3.如权利要求2所述的衬底支撑,其特征在于,所述环状盘伸出并邻接于所述底座的侧壁,以保护所述侧壁不受杂散涂层材料的影响。
4.如权利要求3所述的衬底支撑,还包括从所述环状盘伸出的夹片,所述夹片用于将所述盖可松开地附着于所述底座。
5.如权利要求4所述的衬底支撑,还包括位于所述底座上的往复移动的闭锁表面,所述往复移动的闭锁表面可在第一位置和第二位置之间移动,所述第一位置接合所述夹片,且所述夹片在所述第二位置松开。
6.如权利要求5所述的衬底支撑,其特征在于,所述闭锁表面被弹簧偏置到所述第一位置。
7.如权利要求1所述的衬底支撑,其特征在于,所述环状盘向外伸出而离开所述盖,以便于将所述衬底托架抓紧。
8.如权利要求7所述的衬底支撑,其特征在于,所述底座包括包括唇边、中间区域和环状盘,与所述盖的唇边、所述中间区域和所述环状盘分别相对;其中所述底座的唇边和所述盖的唇边形成接收所述衬底的环状狭缝;且所述底座的环状盘伸出并邻接于所述锁闩的侧壁,以保护所述侧壁不受杂散涂层材料的影响。
9.如权利要求8所述的衬底支撑,其特征在于,所述底座和所述盖具有实质上相同的结构,以使所述衬底托架能够被翻转,以涂覆所述衬底的两面。
10.如权利要求9所述的衬底支撑,其特征在于,所述底座的中间区域被点粘合到所述盖的中间区域,以使能够通过手工将它们分离。
11.如权利要求10所述的衬底支撑,其特征在于,每个锁闩都是磁锁闩,以将所述底座吸引到所述心轴。
12.如权利要求11所述的衬底支撑,其特征在于,所述磁锁闩包括环形边缘,以吸引所述底座的中间区域;其中所述底座的环状盘伸出并邻接于所述环形边缘的侧壁,以保护所述环形边缘的侧壁不受杂散涂层材料的影响。
13.如权利要求1所述的衬底支撑,其特征在于,每个锁闩都是磁锁闩,以将所述底座吸引到所述心轴。
14.如权利要求13所述的衬底支撑,其特征在于,每个磁锁闩都包括第一部分和第二部分,所述第二部分可相对于所述第一部分在第一位置与第二位置之间移动,所述永磁体在所述第一位置将所述安装表面磁化以吸引衬底托架,所述安装表面在所述第二位置是不被磁化的。
15.如权利要求14所述的衬底支撑,其特征在于,所述第一部分中的每一个都包括定子和与所述永磁体对准的柱,所述定子包括所述安装表面;且
所述第二部分中的每一个都包括转子,所述转子包括用于在第一位置与第二位置之间的旋转的永磁体,所述永磁体在所述第一位置与所述定子的柱对准,所述永磁体在所述第二位置与所述定子的柱不对准,因此使得所述定子不被磁化。
16.如权利要求15所述的衬底支撑,其特征在于,每个磁锁闩还包括延伸穿过所述心轴的致动器,以旋转每个转子。
17.如权利要求15所述的衬底支撑,其特征在于,每个转子包括多个永磁体;且每个定子包括用于与所述多个永磁体对准的多个柱。
18.如权利要求17所述的衬底支撑,其特征在于,每个转子包括转子柱,所述转子柱位于每个永磁体的每个侧面上,以与各自的定子柱对准,所述转子柱在位于所述第一位置时形成穿过所述安装表面的磁路,且在位于所述第二位置时用于接合单个的定子柱,所述单个的定子柱使所述永磁体短路。
19.如权利要求1所述的衬底支撑,其特征在于,所述盖包括片状金属,所述片状金属用镀锡钢冲压而成,以促进杂散涂层材料在所述盖上的附着。
20.如权利要求1所述的衬底支撑,其特征在于,所述盖可达0.015英寸。
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US10/968,642 US7785456B2 (en) | 2004-10-19 | 2004-10-19 | Magnetic latch for a vapour deposition system |
US10/968,642 | 2004-10-19 |
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CN2005100928247A Expired - Fee Related CN1737191B (zh) | 2004-08-20 | 2005-08-22 | 用于汽相淀积系统的衬底托架 |
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EP (2) | EP1630260B1 (zh) |
JP (2) | JP4907125B2 (zh) |
CN (2) | CN1737192B (zh) |
AT (1) | ATE516390T1 (zh) |
DK (1) | DK1630260T3 (zh) |
PL (1) | PL1630260T3 (zh) |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104321200A (zh) * | 2012-04-12 | 2015-01-28 | 卡巴-诺塔赛斯有限公司 | 凹版印刷板涂覆设备 |
CN104342758A (zh) * | 2013-07-24 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 压环及等离子体加工设备 |
CN105143500A (zh) * | 2012-10-04 | 2015-12-09 | 康宁股份有限公司 | 光学涂覆方法、设备和产品 |
CN106521446A (zh) * | 2016-10-09 | 2017-03-22 | 深圳市万普拉斯科技有限公司 | 真空镀膜方法和真空镀膜治具 |
CN108359945A (zh) * | 2012-05-04 | 2018-08-03 | Viavi科技有限公司 | 电介质薄膜的反应溅射沉积 |
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Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE516390T1 (de) * | 2004-08-20 | 2011-07-15 | Jds Uniphase Inc | Magnetverschluss für eine dampfabscheidungsvorrichtung |
US7954219B2 (en) * | 2004-08-20 | 2011-06-07 | Jds Uniphase Corporation | Substrate holder assembly device |
JP2006199998A (ja) * | 2005-01-20 | 2006-08-03 | Seiko Epson Corp | 成膜装置、成膜方法 |
DE102006032959B3 (de) * | 2006-07-17 | 2007-12-27 | JOH. WINKLHOFER & SÖHNE GMBH & Co. KG | Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern |
DE102006041137B4 (de) * | 2006-09-01 | 2015-02-12 | Carl Zeiss Vision Gmbh | Vorrichtung zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage, Verfahren zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage sowie deren Verwendung |
JP4941197B2 (ja) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
US7853475B2 (en) * | 2007-11-09 | 2010-12-14 | Motorola Mobility, Inc. | Intelligent advertising based on mobile content |
US8563407B2 (en) * | 2009-04-08 | 2013-10-22 | Varian Semiconductor Equipment Associates, Inc. | Dual sided workpiece handling |
US10808319B1 (en) | 2010-02-26 | 2020-10-20 | Quantum Innovations, Inc. | System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms |
US10550474B1 (en) | 2010-02-26 | 2020-02-04 | Quantum Innovations, Inc. | Vapor deposition system |
JP5619666B2 (ja) * | 2010-04-16 | 2014-11-05 | ジェイディーエス ユニフェイズ コーポレーションJDS Uniphase Corporation | マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード |
CN101956177B (zh) * | 2010-10-21 | 2012-08-22 | 湖南玉丰真空科学技术有限公司 | 用于真空连续镀膜生产线的回转仓 |
CN101974733B (zh) * | 2010-10-21 | 2012-07-04 | 湖南玉丰真空科学技术有限公司 | 用于真空连续镀膜生产线的回转机构 |
US9109289B2 (en) | 2011-06-27 | 2015-08-18 | United Technologies Corporation | Manipulator for coating application |
WO2013044233A2 (en) * | 2011-09-22 | 2013-03-28 | The Trustees Of Dartmouth College | Systems and methods for making radially anisotropic thin-film magnetic torroidal cores, and radially anisotropic cores having radial anisotropy, and inductors having radially aniosotropic cores |
EP3696293A1 (en) * | 2011-11-30 | 2020-08-19 | Corning Incorporated | Optical coating method, apparatus and product |
US9957609B2 (en) | 2011-11-30 | 2018-05-01 | Corning Incorporated | Process for making of glass articles with optical and easy-to-clean coatings |
US9144816B2 (en) * | 2011-12-16 | 2015-09-29 | Ppg Industries Ohio, Inc. | Carrier systems for coating panels |
JP5994089B2 (ja) * | 2011-12-29 | 2016-09-21 | 株式会社ブイ・テクノロジー | 蒸着装置 |
JP5994088B2 (ja) * | 2011-12-22 | 2016-09-21 | 株式会社ブイ・テクノロジー | 蒸着装置 |
WO2013094707A1 (ja) * | 2011-12-22 | 2013-06-27 | 株式会社ブイ・テクノロジー | 蒸着装置 |
CA2879971A1 (en) * | 2012-03-20 | 2013-09-26 | Quantum Innovations, Inc. | Vapor deposition system and method |
CN103074610A (zh) * | 2012-08-28 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | 衬底支撑结构、含有上述衬底支撑结构的反应腔室 |
WO2014055134A1 (en) * | 2012-10-04 | 2014-04-10 | Corning Incorporated | Optical coating method, appartus and product |
US9831007B2 (en) | 2014-04-28 | 2017-11-28 | Agfa Healthcare Nv | Radiographic flat panel detector having a ferromagnetic layer and the method of production thereof |
CN104329332B (zh) * | 2014-08-28 | 2020-04-03 | 北京可以科技有限公司 | 旋转连接单元及模块化机器人单体 |
EP3279364B1 (en) * | 2016-08-03 | 2021-10-06 | IHI Hauzer Techno Coating B.V. | Apparatus for coating substrates |
RU2625698C1 (ru) * | 2016-08-29 | 2017-07-18 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") | Способ нанесения защитных покрытий и устройство для его осуществления |
CN106637140B (zh) * | 2016-11-30 | 2018-08-10 | 江苏菲沃泰纳米科技有限公司 | 一种纳米镀膜设备行星回转货架装置 |
TW202336271A (zh) * | 2018-05-04 | 2023-09-16 | 大陸商江蘇菲沃泰納米科技股份有限公司 | 用於電性連接器之奈米塗層保護方法 |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US14368A (en) * | 1856-03-04 | Method | ||
US189228A (en) * | 1877-04-03 | Improvement in spark-arresters | ||
FR1534917A (fr) * | 1967-06-22 | 1968-08-02 | Alcatel Sa | Perfectionnements à l'obtention de dépôts par pulvérisation cathodique |
US3858547A (en) * | 1973-12-14 | 1975-01-07 | Nils H Bergfelt | Coating machine having an adjustable rotation system |
CH599982A5 (zh) * | 1975-09-02 | 1978-06-15 | Balzers Patent Beteilig Ag | |
US4226208A (en) * | 1977-08-04 | 1980-10-07 | Canon Kabushiki Kaisha | Vapor deposition apparatus |
US4222345A (en) * | 1978-11-30 | 1980-09-16 | Optical Coating Laboratory, Inc. | Vacuum coating apparatus with rotary motion assembly |
US4250009A (en) * | 1979-05-18 | 1981-02-10 | International Business Machines Corporation | Energetic particle beam deposition system |
JPS5914640A (ja) * | 1982-07-15 | 1984-01-25 | Sanyo Electric Co Ltd | 高周波スパツタリング法 |
US4485759A (en) * | 1983-01-19 | 1984-12-04 | Multi-Arc Vacuum Systems Inc. | Planetary substrate support apparatus for vapor vacuum deposition coating |
JPS6110239A (ja) | 1984-06-25 | 1986-01-17 | Nec Kansai Ltd | 半導体製造装置 |
JPS61157682A (ja) * | 1984-12-28 | 1986-07-17 | Toa Nenryo Kogyo Kk | 蒸着用マスクの保持方法 |
JPH0348204Y2 (zh) * | 1985-03-20 | 1991-10-15 | ||
JPS6394424A (ja) * | 1986-10-08 | 1988-04-25 | Yamaha Corp | 薄膜磁気ヘツドの製造方法 |
JPS63257942A (ja) * | 1987-04-15 | 1988-10-25 | Oki Electric Ind Co Ltd | 光磁気記録用媒体の製造方法 |
JPH084105B2 (ja) * | 1987-06-19 | 1996-01-17 | 株式会社エンヤシステム | ウェハ接着方法 |
JPH01310512A (ja) * | 1988-06-08 | 1989-12-14 | Seiko Epson Corp | マグネットスタンド |
JPH0748667Y2 (ja) * | 1989-05-31 | 1995-11-08 | 株式会社島津製作所 | 成膜装置の基板回転機構 |
US4988424A (en) * | 1989-06-07 | 1991-01-29 | Ppg Industries, Inc. | Mask and method for making gradient sputtered coatings |
JP2959023B2 (ja) * | 1990-02-23 | 1999-10-06 | 日本電気株式会社 | イオンビームスパッタ装置 |
JPH0418655A (ja) * | 1990-05-11 | 1992-01-22 | Mitsubishi Electric Corp | データ処理装置 |
DE4025659A1 (de) * | 1990-08-14 | 1992-02-20 | Leybold Ag | Umlaufraedergetriebe mit einem raedersatz, insbesondere fuer vorrichtungen zum beschichten von substraten |
RU2008501C1 (ru) | 1990-10-09 | 1994-02-28 | Валерий Андреевич Попов | Воздухоочиститель для двигателя внутреннего сгорания |
JP2981682B2 (ja) * | 1990-11-30 | 1999-11-22 | 新明和工業株式会社 | 連続成膜方式の真空蒸着装置 |
JP3070158B2 (ja) * | 1991-07-04 | 2000-07-24 | 日新電機株式会社 | 薄膜気相成長装置のサセプタ回転支持構造 |
US5232569A (en) * | 1992-03-09 | 1993-08-03 | Tulip Memory Systems, Inc. | Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JPH0960310A (ja) * | 1995-08-21 | 1997-03-04 | Nippon Pneumatic Mfg Co Ltd | 圧砕機 |
US5795448A (en) * | 1995-12-08 | 1998-08-18 | Sony Corporation | Magnetic device for rotating a substrate |
US6054029A (en) * | 1996-02-23 | 2000-04-25 | Singulus Technologies Gmbh | Device for gripping, holdings and/or transporting substrates |
JPH09256159A (ja) * | 1996-03-15 | 1997-09-30 | Sony Corp | ワークの移動装置とワークの移動方法 |
JP2839003B2 (ja) * | 1996-04-05 | 1998-12-16 | 日本電気株式会社 | 真空蒸着装置 |
DE19614600C1 (de) * | 1996-04-13 | 1997-04-24 | Singulus Technologies Gmbh | Vorrichtung zum Maskieren und Abdecken von Substraten |
US5820329A (en) * | 1997-04-10 | 1998-10-13 | Tokyo Electron Limited | Vacuum processing apparatus with low particle generating wafer clamp |
US6575737B1 (en) * | 1997-06-04 | 2003-06-10 | Applied Materials, Inc. | Method and apparatus for improved substrate handling |
JPH11131212A (ja) * | 1997-10-28 | 1999-05-18 | Canon Inc | 枚葉式スパッタ装置、枚葉式スパッタ方法及びスパッタ膜 |
US6030513A (en) * | 1997-12-05 | 2000-02-29 | Applied Materials, Inc. | Full face mask for capacitance-voltage measurements |
US6096404A (en) * | 1997-12-05 | 2000-08-01 | Applied Materials, Inc. | Full face mask for capacitance-voltage measurements |
DE19814834A1 (de) * | 1998-04-02 | 1999-10-07 | Leybold Systems Gmbh | Vorrichtung zum Greifen und Halten eines flachen Substrats |
TW466576B (en) * | 1999-06-15 | 2001-12-01 | Ebara Corp | Substrate processing apparatus |
US6264804B1 (en) * | 2000-04-12 | 2001-07-24 | Ske Technology Corp. | System and method for handling and masking a substrate in a sputter deposition system |
WO2002019379A1 (en) | 2000-08-28 | 2002-03-07 | Institute For Plasma Research | Device and process for producing dc glow discharge |
JP2001203231A (ja) * | 2000-12-11 | 2001-07-27 | Sony Corp | フリップチップはんだバンプの製造方法 |
DE10150809B4 (de) * | 2001-10-15 | 2005-06-16 | Steag Hamatech Ag | Substrathalter |
US6800833B2 (en) * | 2002-03-29 | 2004-10-05 | Mariusch Gregor | Electromagnetically levitated substrate support |
KR100980051B1 (ko) | 2002-06-21 | 2010-09-06 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판홀더 및 도금장치 |
JP3827627B2 (ja) * | 2002-08-13 | 2006-09-27 | 株式会社荏原製作所 | めっき装置及びめっき方法 |
JP2004259919A (ja) * | 2003-02-26 | 2004-09-16 | Ulvac Japan Ltd | 真空搬送装置及び真空処理装置 |
US20050189228A1 (en) | 2004-02-27 | 2005-09-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating apparatus |
ATE516390T1 (de) * | 2004-08-20 | 2011-07-15 | Jds Uniphase Inc | Magnetverschluss für eine dampfabscheidungsvorrichtung |
-
2005
- 2005-08-11 AT AT05255001T patent/ATE516390T1/de active
- 2005-08-11 PL PL05255001T patent/PL1630260T3/pl unknown
- 2005-08-11 PT PT05255001T patent/PT1630260E/pt unknown
- 2005-08-11 EP EP05255001A patent/EP1630260B1/en not_active Not-in-force
- 2005-08-11 DK DK05255001.9T patent/DK1630260T3/da active
- 2005-08-17 US US11/205,513 patent/US7790004B2/en active Active
- 2005-08-17 EP EP05255095A patent/EP1630261B1/en not_active Not-in-force
- 2005-08-19 JP JP2005238271A patent/JP4907125B2/ja not_active Expired - Fee Related
- 2005-08-19 JP JP2005238257A patent/JP4790344B2/ja not_active Expired - Fee Related
- 2005-08-22 CN CN2005100928266A patent/CN1737192B/zh not_active Expired - Fee Related
- 2005-08-22 CN CN2005100928247A patent/CN1737191B/zh not_active Expired - Fee Related
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US11584982B2 (en) | 2012-05-04 | 2023-02-21 | Viavi Solutions Inc. | Reactive sputter deposition of dielectric films |
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CN104342758B (zh) * | 2013-07-24 | 2017-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 压环及等离子体加工设备 |
CN106521446A (zh) * | 2016-10-09 | 2017-03-22 | 深圳市万普拉斯科技有限公司 | 真空镀膜方法和真空镀膜治具 |
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PL1630260T3 (pl) | 2011-12-30 |
PT1630260E (pt) | 2011-10-19 |
ATE516390T1 (de) | 2011-07-15 |
JP2006057185A (ja) | 2006-03-02 |
US7790004B2 (en) | 2010-09-07 |
CN1737192B (zh) | 2010-12-01 |
CN1737192A (zh) | 2006-02-22 |
EP1630260A3 (en) | 2008-11-05 |
EP1630260B1 (en) | 2011-07-13 |
JP2006057183A (ja) | 2006-03-02 |
JP4790344B2 (ja) | 2011-10-12 |
EP1630261B1 (en) | 2012-09-19 |
US20060049044A1 (en) | 2006-03-09 |
EP1630261A3 (en) | 2008-12-10 |
EP1630260A2 (en) | 2006-03-01 |
EP1630261A2 (en) | 2006-03-01 |
JP4907125B2 (ja) | 2012-03-28 |
DK1630260T3 (da) | 2011-10-31 |
CN1737191B (zh) | 2011-12-14 |
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