JP2006057183A - 蒸着システム用の磁気ラッチ - Google Patents
蒸着システム用の磁気ラッチ Download PDFInfo
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- JP2006057183A JP2006057183A JP2005238257A JP2005238257A JP2006057183A JP 2006057183 A JP2006057183 A JP 2006057183A JP 2005238257 A JP2005238257 A JP 2005238257A JP 2005238257 A JP2005238257 A JP 2005238257A JP 2006057183 A JP2006057183 A JP 2006057183A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0231—Magnetic circuits with PM for power or force generation
- H01F7/0252—PM holding devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/04—Means for releasing the attractive force
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】この磁気ラッチは永久磁石を含み、この永久磁石は、基板ホルダを引きつけるために永久磁石がラッチを磁化するラッチ位置と、永久磁石がバイパス回路内で接続されてラッチの磁化が解除され、そのため、基板ホルダが解放される非ラッチ位置との間で移動可能である。
【選択図】図1
Description
関連出願のクロスリファレンス
本発明は優先権を主張しない。
第1軸の回りで回転可能な主支持体と、
主支持体から延び、それぞれのスピンドル軸の回りで回転可能な複数のスピンドルと、
各スピンドルの端部上の磁気ラッチとを備え、前記磁気ラッチは、永久磁石と、基板ホルダを受ける装着表面とを含み、
各磁気ラッチは、第1部分および第2部分を含み、第2部分は、基板ホルダを引きつけるために永久磁石が装着表面を磁化する第1位置と、装着表面が磁化されない第2位置との間で、第1部分に対して相対的に移動可能である。
プロセス・チャンバと、
このプロセス・チャンバ内に配設された、基板にコーティングを被着させるためのコーティング源と、
プロセス・チャンバ内に装着された遊星式基板支持体とを備える。
この遊星式基板支持体は、
第1軸の回りで回転可能な主支持体と、
主支持体から延び、それぞれのスピンドル軸の回りで回転可能な少なくとも1つのスピンドルと、
各スピンドル上にあり、基板ホルダを受ける磁気ラッチとを含む。
各磁気ラッチは、
基板ホルダを受ける装着表面を含む第1部分と、
永久磁石を含む第2部分とを備え、第1部分または第2部分の一方は、基板ホルダを引きつけるために装着表面が一時的な磁石を形成する第1位置と、装着表面が磁化されない第2位置との間で、他方の部分に対して相対的に移動可能である。
Claims (10)
- 基板ホルダに装着された基板をコーティングするコーティング・システムのプロセス・チャンバ内に装着するタイプの遊星式基板支持体であって、
第1軸の回りで回転可能な主支持体と、
前記主支持体から延び、それぞれのスピンドル軸の回りで回転可能な複数のスピンドルと、
各スピンドルの端部上の磁気ラッチとを備え、前記磁気ラッチは、永久磁石と、基板ホルダを受ける装着表面とを含み、
各磁気ラッチは、第1部分および第2部分を含み、前記第2部分は、基板ホルダを引きつけるために前記永久磁石が前記装着表面を磁化する第1位置と、前記装着表面が磁化されない第2位置との間で、前記第1部分に対して相対的に移動可能である、遊星式基板支持体。 - 前記第1部分はそれぞれ、前記装着表面と、前記永久磁石と整列する極とを備えるステータを含み、
前記第2部分はそれぞれ、前記永久磁石を備えるロータを含み、前記永久磁石が前記ステータの前記極と整列する前記第1位置と、前記永久磁石が前記ステータの前記極と整列せず、そのため前記ステータが磁化されない前記第2位置との間で回転する、請求項1に記載の遊星式基板支持体。 - 各磁気ラッチはさらに、各ロータを回転させるための、前記主支持体および前記スピンドルを通って延びるアクチュエータを備える、請求項1に記載の遊星式基板支持体。
- 各ロータは、複数の永久磁石を含み、各ステータは、前記複数の永久磁石と整列する複数の極を含む、請求項2に記載の遊星式基板支持体。
- 各ロータは、各永久磁石の両側にロータ極を含み、前記ロータ極は、前記第1位置にあるときに、それぞれのステータ極と整列して前記装着表面を通る磁気回路を形成し、前記第2位置にあるときに、1つのステータ極と係合して前記永久磁石を短絡する、請求項4に記載の遊星式基板支持体。
- 前記基板を支持する基板ホルダをさらに備え、前記基板ホルダは、前記磁気ラッチによって引きつけられる強磁性部分を含む、請求項1に記載の遊星式基板支持体。
- 前記基板ホルダは、第1位置合わせ形状を含み、各磁気ラッチは、前記第1位置合わせ形状と係合する第2位置合わせ形状を含む、請求項6に記載の遊星式基板支持体。
- 前記第1および第2の位置合わせ形状はそれぞれ、前記基板ホルダおよび各磁気ラッチの中心にある、請求項7に記載の遊星式基板支持体。
- 前記基板ホルダは、前記基板を取り囲む環状リングを含む、請求項6に記載の遊星式基板支持体。
- 各磁気ラッチは、コーティング源の上で基板ホルダをつり下げるためのものである、請求項1に記載の遊星式基板支持体。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60321104P | 2004-08-20 | 2004-08-20 | |
US60/603,211 | 2004-08-20 | ||
US10/968,642 | 2004-10-19 | ||
US10/968,642 US7785456B2 (en) | 2004-10-19 | 2004-10-19 | Magnetic latch for a vapour deposition system |
Publications (2)
Publication Number | Publication Date |
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JP2006057183A true JP2006057183A (ja) | 2006-03-02 |
JP4790344B2 JP4790344B2 (ja) | 2011-10-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005238257A Expired - Fee Related JP4790344B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の磁気ラッチ |
JP2005238271A Expired - Fee Related JP4907125B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の基板ホルダ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005238271A Expired - Fee Related JP4907125B2 (ja) | 2004-08-20 | 2005-08-19 | 蒸着システム用の基板ホルダ |
Country Status (8)
Country | Link |
---|---|
US (1) | US7790004B2 (ja) |
EP (2) | EP1630260B1 (ja) |
JP (2) | JP4790344B2 (ja) |
CN (2) | CN1737192B (ja) |
AT (1) | ATE516390T1 (ja) |
DK (1) | DK1630260T3 (ja) |
PL (1) | PL1630260T3 (ja) |
PT (1) | PT1630260E (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009076818A (ja) * | 2007-09-25 | 2009-04-09 | Mitsubishi Electric Corp | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
WO2013094707A1 (ja) * | 2011-12-22 | 2013-06-27 | 株式会社ブイ・テクノロジー | 蒸着装置 |
JP2013129898A (ja) * | 2011-12-22 | 2013-07-04 | V Technology Co Ltd | 蒸着装置 |
JP2013139600A (ja) * | 2011-12-29 | 2013-07-18 | V Technology Co Ltd | 蒸着装置 |
Families Citing this family (32)
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ATE516390T1 (de) * | 2004-08-20 | 2011-07-15 | Jds Uniphase Inc | Magnetverschluss für eine dampfabscheidungsvorrichtung |
US7954219B2 (en) * | 2004-08-20 | 2011-06-07 | Jds Uniphase Corporation | Substrate holder assembly device |
JP2006199998A (ja) * | 2005-01-20 | 2006-08-03 | Seiko Epson Corp | 成膜装置、成膜方法 |
DE102006032959B3 (de) * | 2006-07-17 | 2007-12-27 | JOH. WINKLHOFER & SÖHNE GMBH & Co. KG | Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern |
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US10808319B1 (en) | 2010-02-26 | 2020-10-20 | Quantum Innovations, Inc. | System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms |
JP5619666B2 (ja) * | 2010-04-16 | 2014-11-05 | ジェイディーエス ユニフェイズ コーポレーションJDS Uniphase Corporation | マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード |
CN101974733B (zh) * | 2010-10-21 | 2012-07-04 | 湖南玉丰真空科学技术有限公司 | 用于真空连续镀膜生产线的回转机构 |
CN101956177B (zh) * | 2010-10-21 | 2012-08-22 | 湖南玉丰真空科学技术有限公司 | 用于真空连续镀膜生产线的回转仓 |
US9109289B2 (en) | 2011-06-27 | 2015-08-18 | United Technologies Corporation | Manipulator for coating application |
US9659706B2 (en) * | 2011-09-22 | 2017-05-23 | The Trustees Of Dartmouth College | Methods for making radially anisotropic thin-film magnetic torroidal cores |
US9957609B2 (en) | 2011-11-30 | 2018-05-01 | Corning Incorporated | Process for making of glass articles with optical and easy-to-clean coatings |
KR20180105248A (ko) * | 2011-11-30 | 2018-09-27 | 코닝 인코포레이티드 | 광학 코팅 방법, 기기 및 제품 |
US10077207B2 (en) | 2011-11-30 | 2018-09-18 | Corning Incorporated | Optical coating method, apparatus and product |
US9144816B2 (en) * | 2011-12-16 | 2015-09-29 | Ppg Industries Ohio, Inc. | Carrier systems for coating panels |
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Also Published As
Publication number | Publication date |
---|---|
PL1630260T3 (pl) | 2011-12-30 |
EP1630260A3 (en) | 2008-11-05 |
EP1630261A2 (en) | 2006-03-01 |
PT1630260E (pt) | 2011-10-19 |
CN1737192B (zh) | 2010-12-01 |
EP1630260B1 (en) | 2011-07-13 |
ATE516390T1 (de) | 2011-07-15 |
CN1737192A (zh) | 2006-02-22 |
DK1630260T3 (da) | 2011-10-31 |
JP4907125B2 (ja) | 2012-03-28 |
EP1630261B1 (en) | 2012-09-19 |
EP1630260A2 (en) | 2006-03-01 |
CN1737191A (zh) | 2006-02-22 |
JP4790344B2 (ja) | 2011-10-12 |
CN1737191B (zh) | 2011-12-14 |
US7790004B2 (en) | 2010-09-07 |
US20060049044A1 (en) | 2006-03-09 |
JP2006057185A (ja) | 2006-03-02 |
EP1630261A3 (en) | 2008-12-10 |
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