CN1737192B - 用于汽相淀积系统的磁锁闩 - Google Patents

用于汽相淀积系统的磁锁闩 Download PDF

Info

Publication number
CN1737192B
CN1737192B CN2005100928266A CN200510092826A CN1737192B CN 1737192 B CN1737192 B CN 1737192B CN 2005100928266 A CN2005100928266 A CN 2005100928266A CN 200510092826 A CN200510092826 A CN 200510092826A CN 1737192 B CN1737192 B CN 1737192B
Authority
CN
China
Prior art keywords
substrate holder
stator
substrate
permanent magnet
door bolt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100928266A
Other languages
English (en)
Other versions
CN1737192A (zh
Inventor
理查德·I.·塞登
马库斯·K.·帝尔什
杰里米·贺氏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Only Yahweh Communication Technology Co Ltd
Original Assignee
Flex Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/968,642 external-priority patent/US7785456B2/en
Application filed by Flex Products Inc filed Critical Flex Products Inc
Publication of CN1737192A publication Critical patent/CN1737192A/zh
Application granted granted Critical
Publication of CN1737192B publication Critical patent/CN1737192B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0231—Magnetic circuits with PM for power or force generation
    • H01F7/0252—PM holding devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/04—Means for releasing the attractive force
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
  • Supporting Of Heads In Record-Carrier Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明涉及一种用于在行星式旋转平台上固定衬底的磁锁闩，所述行星式旋转平台悬挂在汽相淀积系统，如化学汽相淀积(CVD)系统或物理汽相淀积(PVD)系统的真空腔中的涂料源之上。所述磁锁闩包括永磁体，所述永磁体可在锁定位置与解锁位置之间移动，所述永磁体在所述锁定位置将所述锁闩磁化以吸引衬底托架，所述永磁体在所述解锁位置连接在旁路中，从而将所述锁闩消磁以释放所述衬底托架。

Description

用于汽相淀积系统的磁锁闩 
交叉引用的相关申请
[01]本发明主张于2004年8月20日提交的美国临时专利申请No.60/603,211和于2004年10月19日提交的美国专利申请No.10/968,642的优先权，上述专利申请通过参考合并到本发明中。 
技术领域
[02]本发明涉及一种用于汽相淀积系统的磁锁闩，尤其涉及一种软性接合磁锁闩，所述软性接合磁锁闩用于悬挂物理汽相淀积系统(PVD)或化学汽相淀积系统(CVD)的真空腔中的衬底托架。 
背景技术
[03]从PVD或CVD系统中的源流出的涂料流是相对稳定的；不过，它们具有一种空间分布，所述空间分布在衬底保持静止的情况下会导致淀积的膜具有不均匀的厚度。为了提高均匀度，所述源与所述衬底之间的几何关系必须进行适当的选择。在将所述衬底绕着垂直于要进行涂覆的表面的轴旋转时，尤其是在将多个衬底安装在行星结构中的多个心轴(spindle)上时，已观察到了良好的效果。 
[04]常规的行星齿轮涂膜系统，如在1992年4月21日发表的、专利权人为Stefan Locher等人的美国专利No.5,106,346中所公开的行星齿轮涂膜系统，包括带有几个单独心轴(行星)的大的旋转平台，这些单独的心轴可在所述旋转平台上旋转并放置在密封的真空腔内。可令人遗憾的是，每个衬底托架必须连接到每个心轴上的安装盘上，这种安装利用机械固件进行，如螺栓，并要求手工置换。这些机械系统不仅要求额外的手工劳动，而且还更容易受到由温度和压力中的变化所导致的未对准的影响。 
[05]为了将尽可能多的轴承和齿轮结构与所述真空腔隔离，Hurwitt等人在1998年8月18日发表的美国专利No.5,795,448中公开了一种行星齿轮涂膜系统，这种系统在每个心轴的轴中包括一种磁性连接。所述衬底托架并不悬挂在所述阴极上方，但仍需要使用机械固件来附着在所述心轴的安装盘上。 
[06]在2002年10月15日发表的专利权人为Shinozaki的美国专利No.6,464,825中所公开的涂膜系统中，包括机器臂，所述机器臂在增压装载/卸载腔与所述主真空腔之间 移动，以将进入所述主真空腔中的尘埃降到最低。所述Shinozaki系统还包括磁旋转驱动器和磁浮力构件，以将相互作用的机械元件所导致的微粒生成降到最小。不过，Shinozaki的专利公开了一种单独的旋转平台，所述旋转平台带有完全环绕所述衬底托架的复杂的浮力平台和电磁体。可令人遗憾的是，这种方法在行星齿轮涂膜系统中不可能实现，因为在真空和升高的温度条件下运行时难以将动力单独输送到行星系统中的个别的旋转衬底托架。 
本发明的一个目的在于通过提供一种磁锁闩来克服现有技术中的缺陷，这种磁锁闩用于将衬底托架附在悬挂在行星涂膜系统中的阴极上方的心轴上，而不产生对所述衬底的震动和不产生微粒物质。 
发明内容
因此，本发明涉及一种用于安装在涂膜系统的处理腔中的类型的行星式衬底支撑件，所述涂膜系统用于对安装在衬底托架上的衬底进行涂覆，所述行星式衬底支撑件包括： 
可围绕第一轴旋转的主支撑件； 
多个心轴，所述多个心轴从所述主支撑件伸出并可围绕各自的心轴的轴旋转；和 
位于每个心轴的末端的磁锁闩，所述磁锁闩包括永磁体和用于接收衬底托架的安装表面； 
其中每个磁锁闩包括定子和转子，所述定子包括所述安装表面和定子柱，所述定子柱用于与所述永磁体准直，所述转子包括所述永磁体，所述永磁体可相对于所述定子在第一位置和第二位置之间移动，所述永磁体在所述第一位置将所述安装表面磁化以吸引衬底托架，所述安装表面在所述第二位置没有磁性。 
本发明的另一方面涉及一种用于涂覆安装在衬底托架上的衬底的涂膜系统，所述系统包括： 
处理腔； 
放置在所述处理腔中的用于在所述衬底上淀积涂料的涂料源；和 
安装在所述处理腔中的行星式衬底支撑件。 
所述行星式衬底支撑件包括： 
可围绕第一轴旋转的主支撑件； 
至少一个心轴，所述心轴从所述主支撑件伸出并可围绕各自的心轴的轴旋转；和 
位于每个心轴上的用于接收所述衬底托架的磁锁闩； 
每个磁锁闩包括： 
定子，所述定子包括用于接收所述衬底托架的安装表面和定子柱；和 
转子，所述转子包括永磁体，所述永磁体用于在第一位置和第二位置之间移动，在所述第一位置，所述安装表面被磁化以吸引衬底托架，在所述第二位置，所述安装表面没有磁性。 
附图说明
在此将结合附图对本发明进行更详细的描述，这些附图表示本发明的优选实施例，在这些附图中： 
图1是根据本发明的涂膜系统的等轴测视图； 
图2是图1中的涂膜系统的等轴测视图，其中将一些外壁移去； 
图3是根据本发明的带有磁锁闩的行星式衬底托架的示意图； 
图4a到4c是根据本发明的磁锁闩的基本原理示意图； 
图5是根据本发明的磁锁闩的等轴测视图； 
图6a是图5中磁锁闩的定子的俯视图； 
图6b是图6a中的定子的截面图； 
图7是图5中的磁锁闩在解锁位置的俯视图；和 
图8a到8d是根据本发明的衬底托架的示意图。 
具体实施方式
参看图1到图3，根据本发明的汽相淀积真空系统，如物理汽相淀积(PVD)或化学汽相淀积(CVD)，包括一般用1表示的预真空锁(load lock)腔和带有闸式阀3的处理腔2，所述闸式阀3位于所述预真空锁腔1与所述处理腔2之间。所述闸式阀3能够使所述预真空锁腔1中的压力达到大气压力以装载或卸载所述衬底，或者使所述预真空锁腔1中的压力重新恢复到所述处理腔2的压力以进行衬底的转移，而独立于所述处理腔2中的压力。所述预真空锁腔1包括在其内部带有盒式升降器5的装载容器4和在其内部带有机械臂7的转移通道6。所述机械臂7的控制装置安装在圆柱形罐8中，所述圆柱形罐8从所述转移通道6中伸出。 
阴极12和行星式衬底支撑件14安装在所述处理腔2中。所述行星式衬底支撑件14包括主圆柱形平台16，所述主圆柱形平台16可围绕第一轴旋转，所述心轴有多个，如六个心轴17，所述这些心轴17从所述支撑件伸出，每个心轴17可围绕各自的轴旋转，优选这些轴平行于所述第一轴，但也可以以其它的角度。在使用时，由于将所述主平台16旋转，所以每个单独的心轴17也被旋转，以保证在每个衬底的所有部分上的均匀涂覆。每个心轴17包括在其外自由端的磁锁闩18，以将衬底悬挂在所述阴极12上方，这一点将在下面进行描述。 
[36]至少有一个阴极12，优选低电弧阴极，被安装在所述处理腔2内。可提供更多的阴极12，以在出现故障或一个阴极12中的涂料供应耗尽的情况下备用。作为选择，可提供几个不同的阴极12，以使不同的涂料能够连续地淀积而并不将所述处理腔2打开而暴露在大气中。优选可通过手动或遥控装置移动安装盘(未示出)来将所述阴极12的位置进行微调。 
[37]通过泵口22使所述处理腔2形成真空，同时通过质量流量控制器(mass flowcontrollers)(未示出)将处理气体提供给所述处理腔2。 
[38]虽然在此对溅射淀积真空系统进行了描述，但根据本发明的行星式衬底支撑件可以同其它任何适当的涂膜系统一起使用，如蒸发系统或CVD系统。所述涂覆过程可通过另外的设备，如模板、掩模、离子轰击装置，以及先进的阳极概念或等离子激活系统进行改进。 
[39]虽然此处所示出的涂膜系统是以向上溅射结构，但根据本发明的磁锁闩可以用其它的方向来使用，如向下涂覆和向侧面涂覆。 
[40]在所述闸式阀3关闭的情况下将安装在衬底托架23中的未经涂覆的衬底装载到所述盒式升降器5上，这样就能够保持所述处理腔2中的压力。在将所述预真空锁腔1形成真空时，通往所述处理腔2的闸式阀打开，且所述机械臂7穿过所述转移通道6和通往所述处理腔2的打开的闸式阀3转移每个衬底托架23，以在所述磁锁闩18的帮助下，将所述衬底托架安装在所述心轴17上。 
[41]所述磁锁闩18的基本原理在图4a到4c中示出，在这些图中，永磁体31置于解锁位置(图4a和4b)或锁定位置(图4c)。在图4a中，用箭头32表示的磁路通过旁路部分33来完成，而留下柱34a和34b未被磁化。在图4b中，将所述衬底托架23处于与所述柱34a和34b接触的位置，因此提供一种可供选择的磁路。为了完成在图4c中由箭头36表示的可供选择的磁路，使所述永磁体31旋转并与所述柱34a和34b成一直线，从而确保所述衬底托架23被所述柱34a和34b磁性吸引。作为选择，所述永磁体31可以保持不动，而将所述旁路部分33和所述柱34a和34b移动来与之对准和不对准。 
[42]图5、图6a、图6b和图7所示的磁锁闩18的优选实施例包括圆柱形定子41，所述圆柱形定子41具有可在其上面旋转的圆柱形转子42。所述定子41包括三套定子柱43a和43b，所述定子柱43a和43b由多个机械固件，如六角螺栓固定到基座44，以保证良好接触。所述转子42包括三个径向延伸的永磁体47，所述永磁体47夹在转子柱48a和48b之间。所述永磁体的北磁极和南磁极沿着所述永磁体的长边延伸并分别邻接于所述转子柱48a和48b。每个磁锁闩18包括伸长的致动器49，所述伸长的致动器49向下延伸并穿过所述主平台16和每个心轴17，以从所述处理腔2的外部使转子42在所述锁定位置(图5)与所述解锁位置(图7)之间旋转。所述致动器49在其上端包括舌片或其它可接合结构，以接合位于所述行星式衬底支撑件之上的另一个机械装置，如轴50(图3)。在所述解锁位置，将两个转子柱48a和48b旋转并邻接于所述定子柱中的一个43b，从而使所述永磁体47短路，断开了穿过所述定子41的磁路，并释放了所述衬底托架23。 
[43]为了便于所述衬底托架23与所述定子41的准直，提供从所述基座44的中心伸出的锥形销51。在所述基座44的中心的单独的锥形销51提供一种准直装置，所述准直装置确保所述衬底托架23的正确准直而并不要求精确的角度方向。多个锥形销可位于沿所述定子的圆周的其它位置或其它径向位置。 
[44]衬底托架23的例子在图8a到图8d中示出。图8a中的衬底托架23a包括固定在环盖54上的基座53，所述环盖54包括环肩56，以支撑单独的衬底57。在所述基座53中提供圆柱形凹槽55以接收所述锥形销51，这样就为所述锥形销提供了配合准直装置。所述基座53完全或至少部分地用由所述磁锁闩18所吸引的材料形成，如包括铁、钴和镍之中的一种或多种的铁磁材料。所述基座53还为所述衬底57的未经涂覆的侧面提供保护性覆盖，这样就避免了无意的和并不希望得到的反向涂覆。衬底托架23b(图8b)包括固定在所述基座53的多盘环盖58。所述多盘环盖58包括多个环肩59，以支撑多个较小的衬底61。对于异形衬底，如棱柱62，提供多棱柱盖63，以安装在所述基座53上，见图8c。 
[45]作为所述基座53的另一种选择，用于吸引到所述定子41的铁磁环71围绕衬底72(图8d)。所述环71的好处在于，可以用相同的或不同的涂料在衬底的相对侧面进行涂覆，而并不将其从所述环71取下。而且，在处理不同涂料时，所述衬底72和环71并不需要从处理腔2取下，如简单地由所述机械臂7翻转。 
[46]典型的衬底将会是直径为200mm、厚度为0.7到1.4mm的玻璃片；不过，其它的衬底形式也是可能的，如厚度可达32mm、重量可达2kg。 

Claims (9)

1.一种用于安装在涂膜系统的处理腔中的类型的行星式衬底支撑件，所述涂膜系统用于对安装在衬底托架上的衬底进行涂覆，所述行星式衬底支撑件包括：
可围绕第一轴旋转的主支撑件；
多个心轴，所述多个心轴从所述主支撑件伸出并可围绕各自的心轴的轴旋转；和
位于每个心轴的末端的磁锁闩，所述磁锁闩包括永磁体和用于接收衬底托架的安装表面；
其中每个磁锁闩包括：
定子，所述定子包括所述安装表面和定子柱，所述定子柱用于与所述永磁体准直；和
转子，所述转子包括所述永磁体，所述永磁体可相对于所述定子在第一位置和第二位置之间移动，在所述第一位置时，所述转子上的所述永磁体和在所述定子上的定子柱形成磁路，并在所述第一位置将所述安装表面磁化以吸引衬底托架，在所述第二位置时，所述磁路被断开，所述安装表面在所述第二位置没有磁性，从而将所述衬底托架从所述磁锁闩释放。
2.如权利要求1所述的行星式衬底支撑件，其特征在于，每个磁锁闩还包括穿过所述主支撑件和所述心轴延伸的致动器，所述致动器用于从处理腔外部旋转每个转子。
3.如权利要求1所述的行星式衬底支撑件，其特征在于，每个转子包括多个永磁体；且每个定子包括多个定子柱，用于与所述多个永磁体准直。
4.如权利要求3所述的行星式衬底支撑件，其特征在于，每个转子包括位于每个永磁体的每个侧面上的转子柱，以与各自的定子柱准直，当位于所述第一位置时，所述转子柱形成穿过所述安装表面的磁路，当位于所述第二位置时，所述转子柱用于接合单个的定子柱，使所述永磁体短路。
5.如权利要求1所述的行星式衬底支撑件，还包括用于支撑所述衬底的衬底托架，所述衬底托架包括铁磁部分，以由所述磁锁闩所吸引。
6.如权利要求5所述的行星式衬底支撑件，其特征在于，所述衬底托架包括第一准直装置，且其中每个磁锁闩包括第二准直装置，以接合所述第一准直装置。
7.如权利要求6所述的行星式衬底支撑件，其特征在于，所述第一和第二准直装置分别位于所述衬底托架的中心和每个磁锁闩的中心。
8.如权利要求5所述的行星式衬底支撑件，其特征在于，所述衬底托架包括围绕所述衬底的环。
9.如权利要求1所述的行星式衬底支撑件，其特征在于，每个磁锁闩用于将衬底托架悬挂在涂料源之上。
CN2005100928266A 2004-08-20 2005-08-22 用于汽相淀积系统的磁锁闩 Expired - Fee Related CN1737192B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US60321104P 2004-08-20 2004-08-20
US60/603,211 2004-08-20
US10/968,642 2004-10-19
US10/968,642 US7785456B2 (en) 2004-10-19 2004-10-19 Magnetic latch for a vapour deposition system

Publications (2)

Publication Number Publication Date
CN1737192A CN1737192A (zh) 2006-02-22
CN1737192B true CN1737192B (zh) 2010-12-01

Family

ID=35457340

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2005100928247A Expired - Fee Related CN1737191B (zh) 2004-08-20 2005-08-22 用于汽相淀积系统的衬底托架
CN2005100928266A Expired - Fee Related CN1737192B (zh) 2004-08-20 2005-08-22 用于汽相淀积系统的磁锁闩

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2005100928247A Expired - Fee Related CN1737191B (zh) 2004-08-20 2005-08-22 用于汽相淀积系统的衬底托架

Country Status (8)

Country Link
US (1) US7790004B2 (zh)
EP (2) EP1630260B1 (zh)
JP (2) JP4790344B2 (zh)
CN (2) CN1737191B (zh)
AT (1) ATE516390T1 (zh)
DK (1) DK1630260T3 (zh)
PL (1) PL1630260T3 (zh)
PT (1) PT1630260E (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7954219B2 (en) * 2004-08-20 2011-06-07 Jds Uniphase Corporation Substrate holder assembly device
DK1630260T3 (da) * 2004-08-20 2011-10-31 Jds Uniphase Inc Magnetisk holdemekanisme til et dampudfældningssystem
JP2006199998A (ja) * 2005-01-20 2006-08-03 Seiko Epson Corp 成膜装置、成膜方法
DE102006032959B3 (de) * 2006-07-17 2007-12-27 JOH. WINKLHOFER & SÖHNE GMBH & Co. KG Werkstückträger für Vakuumbeschichtungsanlagen mit magnetischen Aufnahmekörpern
DE102006041137B4 (de) * 2006-09-01 2015-02-12 Carl Zeiss Vision Gmbh Vorrichtung zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage, Verfahren zum Wenden eines Gegenstands in einer Vakuumbeschichtungsanlage sowie deren Verwendung
JP4941197B2 (ja) * 2007-09-25 2012-05-30 三菱電機株式会社 半導体デバイスの成膜用ホルダ及び成膜用装置
US7853475B2 (en) * 2007-11-09 2010-12-14 Motorola Mobility, Inc. Intelligent advertising based on mobile content
US8563407B2 (en) * 2009-04-08 2013-10-22 Varian Semiconductor Equipment Associates, Inc. Dual sided workpiece handling
US10550474B1 (en) 2010-02-26 2020-02-04 Quantum Innovations, Inc. Vapor deposition system
US10808319B1 (en) 2010-02-26 2020-10-20 Quantum Innovations, Inc. System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms
JP5619666B2 (ja) * 2010-04-16 2014-11-05 ジェイディーエス ユニフェイズ コーポレーションＪＤＳ Ｕｎｉｐｈａｓｅ Ｃｏｒｐｏｒａｔｉｏｎ マグネトロン・スパッタリング・デバイスで使用するためのリング・カソード
CN101974733B (zh) * 2010-10-21 2012-07-04 湖南玉丰真空科学技术有限公司 用于真空连续镀膜生产线的回转机构
CN101956177B (zh) * 2010-10-21 2012-08-22 湖南玉丰真空科学技术有限公司 用于真空连续镀膜生产线的回转仓
US9109289B2 (en) 2011-06-27 2015-08-18 United Technologies Corporation Manipulator for coating application
US9659706B2 (en) * 2011-09-22 2017-05-23 The Trustees Of Dartmouth College Methods for making radially anisotropic thin-film magnetic torroidal cores
CN104302589B (zh) 2011-11-30 2017-11-28 康宁股份有限公司 光学涂覆方法、设备和产品
US10077207B2 (en) 2011-11-30 2018-09-18 Corning Incorporated Optical coating method, apparatus and product
US9957609B2 (en) 2011-11-30 2018-05-01 Corning Incorporated Process for making of glass articles with optical and easy-to-clean coatings
US9144816B2 (en) * 2011-12-16 2015-09-29 Ppg Industries Ohio, Inc. Carrier systems for coating panels
JP5994089B2 (ja) * 2011-12-29 2016-09-21 株式会社ブイ・テクノロジー 蒸着装置
WO2013094707A1 (ja) * 2011-12-22 2013-06-27 株式会社ブイ・テクノロジー 蒸着装置
JP5994088B2 (ja) * 2011-12-22 2016-09-21 株式会社ブイ・テクノロジー 蒸着装置
CA2879971A1 (en) * 2012-03-20 2013-09-26 Quantum Innovations, Inc. Vapor deposition system and method
EP2650135A1 (en) * 2012-04-12 2013-10-16 KBA-NotaSys SA Intaglio printing plate coating apparatus
JP6244103B2 (ja) 2012-05-04 2017-12-06 ヴァイアヴィ・ソリューションズ・インコーポレイテッドＶｉａｖｉ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム
CN103074610A (zh) * 2012-08-28 2013-05-01 光达光电设备科技（嘉兴）有限公司 衬底支撑结构、含有上述衬底支撑结构的反应腔室
WO2014055134A1 (en) * 2012-10-04 2014-04-10 Corning Incorporated Optical coating method, appartus and product
CN105143500B (zh) * 2012-10-04 2017-10-10 康宁股份有限公司 光学涂覆方法、设备和产品
CN104342758B (zh) * 2013-07-24 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 压环及等离子体加工设备
CN106233161B (zh) 2014-04-28 2019-10-22 爱克发有限公司 具有铁磁性层的放射照相平板检测器及其产生方法
CN104329332B (zh) * 2014-08-28 2020-04-03 北京可以科技有限公司 旋转连接单元及模块化机器人单体
EP3279364B1 (en) * 2016-08-03 2021-10-06 IHI Hauzer Techno Coating B.V. Apparatus for coating substrates
RU2625698C1 (ru) * 2016-08-29 2017-07-18 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") Способ нанесения защитных покрытий и устройство для его осуществления
CN106521446B (zh) * 2016-10-09 2019-01-11 深圳市万普拉斯科技有限公司 真空镀膜方法和真空镀膜治具
CN106637140B (zh) * 2016-11-30 2018-08-10 江苏菲沃泰纳米科技有限公司 一种纳米镀膜设备行星回转货架装置
KR20210005072A (ko) * 2018-05-04 2021-01-13 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 전기 디바이스에 대한 나노-코팅 보호 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795448A (en) * 1995-12-08 1998-08-18 Sony Corporation Magnetic device for rotating a substrate
CN1239063A (zh) * 1998-04-02 1999-12-22 莱博德系统股份有限公司 用于夹紧并抓住一个平基片的装置
US6464825B1 (en) * 1999-06-15 2002-10-15 Ebara Corporation Substrate processing apparatus including a magnetically levitated and rotated substrate holder

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US14368A (en) * 1856-03-04 Method
US189228A (en) * 1877-04-03 Improvement in spark-arresters
FR1534917A (fr) * 1967-06-22 1968-08-02 Alcatel Sa Perfectionnements à l'obtention de dépôts par pulvérisation cathodique
US3858547A (en) * 1973-12-14 1975-01-07 Nils H Bergfelt Coating machine having an adjustable rotation system
CH599982A5 (zh) * 1975-09-02 1978-06-15 Balzers Patent Beteilig Ag
US4226208A (en) * 1977-08-04 1980-10-07 Canon Kabushiki Kaisha Vapor deposition apparatus
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
US4250009A (en) * 1979-05-18 1981-02-10 International Business Machines Corporation Energetic particle beam deposition system
JPS5914640A (ja) * 1982-07-15 1984-01-25 Sanyo Electric Co Ltd 高周波スパツタリング法
US4485759A (en) * 1983-01-19 1984-12-04 Multi-Arc Vacuum Systems Inc. Planetary substrate support apparatus for vapor vacuum deposition coating
JPS6110239A (ja) 1984-06-25 1986-01-17 Nec Kansai Ltd 半導体製造装置
JPS61157682A (ja) * 1984-12-28 1986-07-17 Toa Nenryo Kogyo Kk 蒸着用マスクの保持方法
JPH0348204Y2 (zh) * 1985-03-20 1991-10-15
JPS6394424A (ja) * 1986-10-08 1988-04-25 Yamaha Corp 薄膜磁気ヘツドの製造方法
JPS63257942A (ja) * 1987-04-15 1988-10-25 Oki Electric Ind Co Ltd 光磁気記録用媒体の製造方法
JPH084105B2 (ja) * 1987-06-19 1996-01-17 株式会社エンヤシステム ウェハ接着方法
JPH01310512A (ja) * 1988-06-08 1989-12-14 Seiko Epson Corp マグネットスタンド
JPH0748667Y2 (ja) * 1989-05-31 1995-11-08 株式会社島津製作所 成膜装置の基板回転機構
US4988424A (en) * 1989-06-07 1991-01-29 Ppg Industries, Inc. Mask and method for making gradient sputtered coatings
JP2959023B2 (ja) * 1990-02-23 1999-10-06 日本電気株式会社 イオンビームスパッタ装置
JPH0418655A (ja) * 1990-05-11 1992-01-22 Mitsubishi Electric Corp データ処理装置
DE4025659A1 (de) 1990-08-14 1992-02-20 Leybold Ag Umlaufraedergetriebe mit einem raedersatz, insbesondere fuer vorrichtungen zum beschichten von substraten
RU2008501C1 (ru) 1990-10-09 1994-02-28 Валерий Андреевич Попов Воздухоочиститель для двигателя внутреннего сгорания
JP2981682B2 (ja) * 1990-11-30 1999-11-22 新明和工業株式会社 連続成膜方式の真空蒸着装置
JP3070158B2 (ja) * 1991-07-04 2000-07-24 日新電機株式会社 薄膜気相成長装置のサセプタ回転支持構造
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH0960310A (ja) * 1995-08-21 1997-03-04 Nippon Pneumatic Mfg Co Ltd 圧砕機
US6054029A (en) * 1996-02-23 2000-04-25 Singulus Technologies Gmbh Device for gripping, holdings and/or transporting substrates
JPH09256159A (ja) * 1996-03-15 1997-09-30 Sony Corp ワークの移動装置とワークの移動方法
JP2839003B2 (ja) * 1996-04-05 1998-12-16 日本電気株式会社 真空蒸着装置
DE19614600C1 (de) * 1996-04-13 1997-04-24 Singulus Technologies Gmbh Vorrichtung zum Maskieren und Abdecken von Substraten
US5820329A (en) * 1997-04-10 1998-10-13 Tokyo Electron Limited Vacuum processing apparatus with low particle generating wafer clamp
US6575737B1 (en) * 1997-06-04 2003-06-10 Applied Materials, Inc. Method and apparatus for improved substrate handling
JPH11131212A (ja) * 1997-10-28 1999-05-18 Canon Inc 枚葉式スパッタ装置、枚葉式スパッタ方法及びスパッタ膜
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6264804B1 (en) * 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
WO2002019379A1 (en) 2000-08-28 2002-03-07 Institute For Plasma Research Device and process for producing dc glow discharge
JP2001203231A (ja) * 2000-12-11 2001-07-27 Sony Corp フリップチップはんだバンプの製造方法
DE10150809B4 (de) * 2001-10-15 2005-06-16 Steag Hamatech Ag Substrathalter
US6800833B2 (en) * 2002-03-29 2004-10-05 Mariusch Gregor Electromagnetically levitated substrate support
CN100370578C (zh) 2002-06-21 2008-02-20 株式会社荏原制作所 基片保持装置和电镀设备
JP3827627B2 (ja) * 2002-08-13 2006-09-27 株式会社荏原製作所 めっき装置及びめっき方法
JP2004259919A (ja) * 2003-02-26 2004-09-16 Ulvac Japan Ltd 真空搬送装置及び真空処理装置
US20050189228A1 (en) 2004-02-27 2005-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating apparatus
DK1630260T3 (da) * 2004-08-20 2011-10-31 Jds Uniphase Inc Magnetisk holdemekanisme til et dampudfældningssystem

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5795448A (en) * 1995-12-08 1998-08-18 Sony Corporation Magnetic device for rotating a substrate
CN1239063A (zh) * 1998-04-02 1999-12-22 莱博德系统股份有限公司 用于夹紧并抓住一个平基片的装置
US6464825B1 (en) * 1999-06-15 2002-10-15 Ebara Corporation Substrate processing apparatus including a magnetically levitated and rotated substrate holder

Also Published As

Publication number Publication date
EP1630261A3 (en) 2008-12-10
JP2006057185A (ja) 2006-03-02
JP2006057183A (ja) 2006-03-02
EP1630260B1 (en) 2011-07-13
CN1737192A (zh) 2006-02-22
DK1630260T3 (da) 2011-10-31
EP1630260A2 (en) 2006-03-01
US7790004B2 (en) 2010-09-07
EP1630260A3 (en) 2008-11-05
EP1630261A2 (en) 2006-03-01
JP4790344B2 (ja) 2011-10-12
CN1737191B (zh) 2011-12-14
US20060049044A1 (en) 2006-03-09
ATE516390T1 (de) 2011-07-15
PL1630260T3 (pl) 2011-12-30
CN1737191A (zh) 2006-02-22
EP1630261B1 (en) 2012-09-19
JP4907125B2 (ja) 2012-03-28
PT1630260E (pt) 2011-10-19

Similar Documents

Publication Publication Date Title
CN1737192B (zh) 用于汽相淀积系统的磁锁闩
TWI679081B (zh) 載體、遮罩裝置、真空系統及操作一真空系統之方法
US9016234B2 (en) Mask holding device capable of changing magnetic means and deposition equipment using the same
TWI553765B (zh) 真空處理設備
WO2017074501A1 (en) Apparatus for loading a substrate, system for vacuum processing of a substrate, and method for loading a substrate
CN102171379A (zh) 溅射装置以及溅射方法
CN101790597A (zh) 真空处理设备、使用该真空处理设备制造图像显示设备的方法以及由该真空处理设备制造的电子装置
TWI687533B (zh) 用於一基板之真空處理之設備、用於具有有機材料之裝置之製造的系統、及用以密封連接二壓力區域之一開孔之方法
US7785456B2 (en) Magnetic latch for a vapour deposition system
KR20170000267U (ko) 2 개의 코팅 구역들에서의 회전식 타겟 어셈블리들에 의해 기판을 코팅하기위한 장치
WO2020020462A1 (en) Holding device for holding a carrier or a component in a vacuum chamber, use of a holding device for holding a carrier or a component in a vacuum chamber, apparatus for handling a carrier in a vacuum chamber, and vacuum deposition system
US20070138009A1 (en) Sputtering apparatus
KR102069665B1 (ko) 기판의 진공 프로세싱을 위한 장치, 유기 재료들을 갖는 디바이스들의 제조를 위한 시스템, 및 프로세싱 진공 챔버와 유지보수 진공 챔버를 서로 밀봉하기 위한 방법
US7806641B2 (en) Substrate processing system having improved substrate transport system
KR102195789B1 (ko) 정적 반응성 스퍼터 프로세스들을 위한 프로세스 가스 세그먼트화
KR20190077575A (ko) 기판 상으로의 층 증착을 위한 장치 및 방법
CN102373423A (zh) 溅镀装置
TW201910545A (zh) 用於處理基板的設備、用於處理基板的處理系統、以及用於保養用在處理基板的設備的方法
CN212084969U (zh) 用于在基板装载模块中支撑基板载体的设备、基板载体以及基板装载模块
WO2023160836A1 (en) Substrate support assembly, substrate processing apparatus method for fixing an edge support frame to a table frame, and method of manufacturing a portion of a display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: VIAVI TECHNOLOGY CO., LTD

Address before: California, USA

Patentee before: Flex Products Inc. A. JDS Unipha

CP01 Change in the name or title of a patent holder

Address after: California, USA

Patentee after: Only Yahweh Communication Technology Co Ltd

Address before: California, USA

Patentee before: VIAVI SOLUTIONS INC.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101201

Termination date: 20200822

CF01 Termination of patent right due to non-payment of annual fee