JP4789798B2 - 散乱計測を用いてオーバレイ誤差を検出する装置および方法 - Google Patents

散乱計測を用いてオーバレイ誤差を検出する装置および方法 Download PDF

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Publication number
JP4789798B2
JP4789798B2 JP2006503834A JP2006503834A JP4789798B2 JP 4789798 B2 JP4789798 B2 JP 4789798B2 JP 2006503834 A JP2006503834 A JP 2006503834A JP 2006503834 A JP2006503834 A JP 2006503834A JP 4789798 B2 JP4789798 B2 JP 4789798B2
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Japan
Prior art keywords
overlay
scatterometry
target
targets
layer
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Expired - Fee Related
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JP2006503834A
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English (en)
Japanese (ja)
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JP2006518942A5 (enExample
JP2006518942A (ja
Inventor
ミーハー・ウォルター・ディ．
レビー・アディ
ゴロヴァネブスキイ・ボリス
フリードマン・マイケル
スミス・イアン
アデル・マイケル
ファブリカント・アナトリー
ベヴィス・クリストファー・エフ．
フィールデン・ジョン
ベアケット・ノア
グロス・ケネス・ピー．
ザリッキ・ピオトル
ワック・ダン
デセッコ・パオラ
ギノブカー・マーク
バルーシュ・モシェ
ノール・ノーム
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measuring Arrangements Characterized By The Use Of Fluids (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
JP2006503834A 2003-02-22 2004-02-23 散乱計測を用いてオーバレイ誤差を検出する装置および方法 Expired - Fee Related JP4789798B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US44949603P 2003-02-22 2003-02-22
US60/449,496 2003-02-22
US49852403P 2003-08-27 2003-08-27
US60/498,524 2003-08-27
US50409303P 2003-09-19 2003-09-19
US60/504,093 2003-09-19
US10/729,838 US7317531B2 (en) 2002-12-05 2003-12-05 Apparatus and methods for detecting overlay errors using scatterometry
US10/729,838 2003-12-05
PCT/US2004/005419 WO2004076963A2 (en) 2003-02-22 2004-02-23 Apparatus and method for detecting overlay errors using scatterometry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011103027A Division JP4932949B2 (ja) 2003-02-22 2011-05-02 散乱計測を用いてオーバレイ誤差を検出する装置および方法

Publications (3)

Publication Number Publication Date
JP2006518942A JP2006518942A (ja) 2006-08-17
JP2006518942A5 JP2006518942A5 (enExample) 2007-07-26
JP4789798B2 true JP4789798B2 (ja) 2011-10-12

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JP2006503834A Expired - Fee Related JP4789798B2 (ja) 2003-02-22 2004-02-23 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2011103027A Expired - Lifetime JP4932949B2 (ja) 2003-02-22 2011-05-02 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2011245169A Expired - Lifetime JP5280507B2 (ja) 2003-02-22 2011-11-09 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2012023385A Expired - Fee Related JP5469688B2 (ja) 2003-02-22 2012-02-06 散乱計測マーク、ターゲット構造、計測用システム、およびオーバーレイ誤差等の決定方法
JP2013235636A Expired - Lifetime JP5675936B2 (ja) 2003-02-22 2013-11-14 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2014202945A Pending JP2015052602A (ja) 2003-02-22 2014-10-01 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2016038645A Pending JP2016106269A (ja) 2003-02-22 2016-03-01 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2017194325A Expired - Lifetime JP6553145B2 (ja) 2003-02-22 2017-10-04 オーバレイ誤差を決定する方法
JP2019043804A Expired - Lifetime JP6668533B2 (ja) 2003-02-22 2019-03-11 散乱計測を用いてオーバレイ誤差を検出する装置および方法

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2011103027A Expired - Lifetime JP4932949B2 (ja) 2003-02-22 2011-05-02 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2011245169A Expired - Lifetime JP5280507B2 (ja) 2003-02-22 2011-11-09 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2012023385A Expired - Fee Related JP5469688B2 (ja) 2003-02-22 2012-02-06 散乱計測マーク、ターゲット構造、計測用システム、およびオーバーレイ誤差等の決定方法
JP2013235636A Expired - Lifetime JP5675936B2 (ja) 2003-02-22 2013-11-14 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2014202945A Pending JP2015052602A (ja) 2003-02-22 2014-10-01 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2016038645A Pending JP2016106269A (ja) 2003-02-22 2016-03-01 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2017194325A Expired - Lifetime JP6553145B2 (ja) 2003-02-22 2017-10-04 オーバレイ誤差を決定する方法
JP2019043804A Expired - Lifetime JP6668533B2 (ja) 2003-02-22 2019-03-11 散乱計測を用いてオーバレイ誤差を検出する装置および方法

Country Status (6)

Country Link
US (13) US7317531B2 (enExample)
EP (1) EP1601931B1 (enExample)
JP (9) JP4789798B2 (enExample)
AT (1) ATE504862T1 (enExample)
DE (1) DE602004032117D1 (enExample)
WO (1) WO2004076963A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017227934A (ja) * 2003-02-22 2017-12-28 ケーエルエー−テンカー コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
CN110470618A (zh) * 2019-07-10 2019-11-19 中国科学院上海技术物理研究所 基于大气选择透过特性的单色仪光波长偏移量的检测方法

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