JP4621182B2 - 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子 - Google Patents
電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims description 34
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8086—Thin film JFET's
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
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- General Physics & Mathematics (AREA)
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- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Description
ESDは、集積電気回路(integrated circuit, IC)にとって、永久的な脅威である。ESD現象では、短い電気的放電パルスが生じる。短い電気的放電パルスでは、大きい電流が流れ、または、高い電圧が生じる。この大きい電流または高い電圧は、電気回路の1つまたは複数の電気的な電子部品を損傷する可能性がある。したがって、上記電気回路では、ESDまたはESD現象に対する保護が必要である。
101 シリコン基板
102 シリコンフィン
103 ソース/ドレイン領域
104 ゲート
105 埋め込まれた酸化物層
150 プレーナ型FDSOI電界効果トランジスタ
151 シリコン基板
152 埋め込まれた二酸化シリコン層
153 絶縁領域
154 拡散領域
155 ウェル領域
156 隆起したソース/ドレイン領域
157 ゲート領域
200 ESDから保護するための保護装置
201 ゲート制御されたフィン型抵抗素子
202 第1端子領域
203 第2端子領域
204 チャネル領域
204a 側面
204b 上部被覆面
204c 下部被覆面
205 ゲート領域
205a ゲート絶縁層
205b 導電性ゲート層
206 基板
207 電気的絶縁層
208 ゲート制御部
209 空間電荷領域
400 電気回路
401 接触パッド
402 ESD保護素子
403 ゲート酸化物キャパシタ
450 電流電圧特性
451 曲線
452 臨界電圧領域
500 ESDから保護するための保護装置
501 ゲート制御されたフィン型抵抗素子
502 第1端子領域
503 第2端子領域
504 チャネル領域
504a 第1サブ領域
504b 第2サブ領域
505 ゲート領域
505a ゲート絶縁層
505b 導電性ゲート層
506 基板
507 電気的絶縁層
508 ゲート制御部
509 空間電荷領域
551 トランジスタ指状部
553 ソース領域
554 チャネル領域
555 ゲート
555a ゲート絶縁層
555b 導電性ゲート層
1000 ESDから保護するための保護装置
1001 プレーナ型PDトランジスタ
1005 ゲート
Claims (21)
- 電気回路において静電気放電保護素子として使用するためのゲート制御されたフィン型抵抗素子であって、
第1端子領域、第2端子領域、および、上記第1端子領域と上記第2端子領域との間に形成されたチャネル領域を備えるフィン構造体と、
上記チャネル領域の上面の一部上に少なくとも形成されたゲート領域とを備え、
上記ゲート領域は、上記第2端子領域に電気的に結合されており、その結果、
上記電気回路が第1動作状態である間、上記ゲート制御されたフィン型抵抗素子は、低い電気抵抗を有し、
上記電気回路が静電気放電現象の開始によって特徴付けられている第2動作状態である間、上記ゲート制御されたフィン型抵抗素子は、上記第1動作状態のときより高い電気抵抗を有する、ゲート制御されたフィン型抵抗素子。 - 上記ゲート領域に電気的に結合されたゲート制御部をさらに備え、
上記ゲート制御部を用いて、
上記電気回路が上記第1動作状態である間は、上記ゲート制御されたフィン型抵抗素子の上記電気抵抗をさらに低減し、および/または、
上記電気回路が上記第2動作状態である間は、上記電気抵抗の上昇を増幅する、請求項1に記載のフィン型抵抗素子。 - 上記各端子領域は、nドープされており、上記チャネル領域は、nドープされた領域として、または、実質的な導電性を有する領域として形成されている、請求項1または2に記載のフィン型抵抗素子。
- 上記各端子領域は、pドープされており、上記チャネル領域は、pドープされた領域として、または、実質的な導電性を有する領域として形成されている、請求項1または2に記載のフィン型抵抗素子。
- 上記各端子領域は、nドープされており、
上記チャネル領域は、複数の各第1サブ領域と複数の各第2サブ領域とを備え、上記各第1サブ領域と上記各第2サブ領域とは交互に連続して形成されており、
上記各第1サブ領域は、実質的な導電性を有しているか、またはpドープされており、
上記各第2サブ領域は、nドープされており、
上記各第1サブ領域の数は、上記各第2サブ領域の数よりも多い、請求項1または2に記載のフィン型抵抗素子。 - 上記各端子領域は、pドープされており、
上記チャネル領域は、複数の各第1サブ領域と複数の各第2サブ領域とを備え、上記各第1サブ領域と上記各第2サブ領域とは交互に連続して形成されており、
上記各第1サブ領域は、実質的な導電性を有しているか、またはnドープされており、
上記各第2サブ領域は、pドープされており、
上記各第1サブ領域の数は、上記各第2サブ領域の数よりも多い、請求項1または2に記載のフィン型抵抗素子。 - 上記ゲート領域は、上記チャネル領域の上記第1サブ領域上に少なくとも形成されている、請求項5または6に記載のフィン型抵抗素子。
- 上記ゲート領域は、導電性ゲート層を備え、上記導電性ゲート層は、上記チャネル領域の上面の一部上に少なくとも形成されている、請求項1〜7のいずれか1項に記載のフィン型抵抗素子。
- 上記ゲート領域が、
上記チャネル領域の上面の一部上に少なくとも形成されているゲート絶縁層と、
上記ゲート絶縁層上に少なくとも形成されている導電性ゲート層とを備えている、請求項1〜8のいずれか1項に記載のフィン型抵抗素子。 - 上記導電性ゲート層が、窒化チタン、ケイ化物、炭素、ポリシリコン、および適切な仕事関数を有する金属化合物のグループから選択された、少なくとも1つを含む、請求項8または9に記載のフィン型抵抗素子。
- 上記導電性ゲート層が、pドープされたポリシリコン材料を含む、請求項10に記載のフィン型抵抗素子。
- 上記ゲート絶縁層が、二酸化シリコン、または、高い誘電定数を有する材料を含む、請求項9〜11のいずれか1項に記載のフィン型抵抗素子。
- 上記ゲート絶縁層が、少なくとも2nmの厚みを有している、請求項9〜12のいずれか1項に記載のフィン型抵抗素子。
- 上記第1端子領域、上記第2端子領域、および上記チャネル領域の少なくとも一つは、シリコン材料を含む、請求項1〜13のいずれか1項に記載のフィン型抵抗素子。
- 上記フィン構造体は、10nm〜10μmの長さ、5nm〜50nmの幅、5nm〜200nmの高さを有する、請求項1〜14のいずれか1項に記載のフィン型抵抗素子。
- 上記第1端子領域は、電源電圧源に電気的に結合されている請求項1〜15のいずれか1項に記載のフィン型抵抗素子。
- 電気回路における静電気放電に対する保護のための保護装置であって、
請求項1〜16のいずれか1項に記載のゲート制御されたフィン型抵抗素子を少なくとも1つ備え、
上記ゲート制御されたフィン型抵抗素子が、静電気放電現象から保護される、上記電気回路の少なくとも1つの素子に対して直列に接続されている保護装置。 - ゲート制御された複数の各フィン型抵抗素子をさらに備え、
上記各フィン型抵抗素子が、1つの共通のゲート領域を備えている、請求項17に記載の保護装置。 - 基板と、
上記基板上に形成された電気的絶縁層とを備え、
上記電気的絶縁層上に形成されている請求項17〜18のいずれか1項に記載の保護装置。 - 上記基板が、シリコン基板として形成されている、請求項19に記載の保護装置。
- 上記電気的絶縁層は、酸化物層として形成されている、請求項19または20に記載の保護装置。
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DE102005039365.9A DE102005039365B4 (de) | 2005-08-19 | 2005-08-19 | Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis |
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JP2010209829A Division JP5473848B2 (ja) | 2005-08-19 | 2010-09-17 | 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子、および、電気回路内部を静電気放電から保護するための保護装置 |
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JP2007053387A JP2007053387A (ja) | 2007-03-01 |
JP4621182B2 true JP4621182B2 (ja) | 2011-01-26 |
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JP2010209829A Active JP5473848B2 (ja) | 2005-08-19 | 2010-09-17 | 電気回路中にて静電気放電保護素子として用いるためのゲート制御されたフィン型抵抗素子、および、電気回路内部を静電気放電から保護するための保護装置 |
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Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7791102B2 (en) * | 2006-10-16 | 2010-09-07 | Advanced Micro Devices, Inc. | Electrostatic discharge protection devices and methods for protecting semiconductor devices against electrostatic discharge events |
US7772619B2 (en) | 2007-05-03 | 2010-08-10 | Suvolta, Inc. | Semiconductor device having a fin structure and fabrication method thereof |
US7898040B2 (en) * | 2007-06-18 | 2011-03-01 | Infineon Technologies Ag | Dual gate FinFET |
US8013393B2 (en) * | 2007-06-29 | 2011-09-06 | Advanced Micro Devices, Inc. | Electrostatic discharge protection devices |
US8010927B2 (en) * | 2007-10-02 | 2011-08-30 | International Business Machines Corporation | Structure for a stacked power clamp having a BigFET gate pull-up circuit |
US7927938B2 (en) * | 2007-11-19 | 2011-04-19 | Micron Technology, Inc. | Fin-JFET |
US20090152589A1 (en) * | 2007-12-17 | 2009-06-18 | Titash Rakshit | Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors |
JP5086797B2 (ja) * | 2007-12-26 | 2012-11-28 | 株式会社東芝 | 半導体装置 |
US7817387B2 (en) * | 2008-01-09 | 2010-10-19 | Freescale Semiconductor, Inc. | MIGFET circuit with ESD protection |
EP2117045A1 (en) * | 2008-05-09 | 2009-11-11 | Imec | Design Methodology for MuGFET ESD Protection Devices |
EP2161755A1 (en) * | 2008-09-05 | 2010-03-10 | University College Cork-National University of Ireland, Cork | Junctionless Metal-Oxide-Semiconductor Transistor |
US8068321B2 (en) * | 2008-10-31 | 2011-11-29 | Monolithic Power Systems, Inc. | Input surge protection device using JFET |
US8278691B2 (en) * | 2008-12-11 | 2012-10-02 | Micron Technology, Inc. | Low power memory device with JFET device structures |
US8110467B2 (en) * | 2009-04-21 | 2012-02-07 | International Business Machines Corporation | Multiple Vt field-effect transistor devices |
US8270131B2 (en) * | 2009-07-31 | 2012-09-18 | Infineon Technologies Ag | Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same |
FR2949564B1 (fr) * | 2009-08-28 | 2012-01-06 | Commissariat Energie Atomique | Procede et dispositif d'evaluation des performances electriques d'un transistor fdsoi |
US8471344B2 (en) * | 2009-09-21 | 2013-06-25 | International Business Machines Corporation | Integrated circuit device with series-connected fin-type field effect transistors and integrated voltage equalization and method of forming the device |
US8232627B2 (en) * | 2009-09-21 | 2012-07-31 | International Business Machines Corporation | Integrated circuit device with series-connected field effect transistors and integrated voltage equalization and method of forming the device |
CN103681847A (zh) * | 2012-09-26 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | 半圆窗形鳍式场效应晶体管及其制造方法 |
WO2011067821A1 (ja) * | 2009-12-04 | 2011-06-09 | 株式会社 東芝 | 半導体装置の製造方法 |
JP5136544B2 (ja) | 2009-12-16 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
US8362572B2 (en) * | 2010-02-09 | 2013-01-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lower parasitic capacitance FinFET |
WO2011101463A1 (en) * | 2010-02-19 | 2011-08-25 | University College Cork - National University Of Ireland, Cork | A transistor device |
US8268689B2 (en) | 2010-08-23 | 2012-09-18 | International Business Machines Corporation | Multiple threshold voltages in field effect transistor devices |
US8659072B2 (en) * | 2010-09-24 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Series FinFET implementation schemes |
US9385050B2 (en) | 2011-01-06 | 2016-07-05 | Globalfoundries Inc. | Structure and method to fabricate resistor on finFET processes |
TWI455316B (zh) * | 2011-01-28 | 2014-10-01 | Richtek Technology Corp | 高壓多閘極元件及其製造方法 |
JP2012182369A (ja) * | 2011-03-02 | 2012-09-20 | Toshiba Corp | 半導体記憶装置 |
US8836032B2 (en) * | 2011-10-20 | 2014-09-16 | Broadcom Corporation | Fin-based adjustable resistor |
US8609499B2 (en) | 2012-01-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and the methods for forming the same |
US8759184B2 (en) | 2012-01-09 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and the methods for forming the same |
TWI506784B (zh) * | 2012-02-09 | 2015-11-01 | United Microelectronics Corp | 半導體元件 |
US9219056B2 (en) | 2012-03-27 | 2015-12-22 | International Business Machines Corporation | Passive devices for FinFET integrated circuit technologies |
US9087719B2 (en) * | 2012-09-28 | 2015-07-21 | Intel Corporation | Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection |
US8962421B2 (en) * | 2012-11-15 | 2015-02-24 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits including semiconductive resistor structures in a FinFET architecture |
US9209265B2 (en) * | 2012-11-15 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD devices comprising semiconductor fins |
KR101979637B1 (ko) * | 2012-11-26 | 2019-08-28 | 삼성전자주식회사 | 반도체 소자 |
US9098666B2 (en) | 2012-11-28 | 2015-08-04 | Qualcomm Incorporated | Clock distribution network for 3D integrated circuit |
US9064077B2 (en) | 2012-11-28 | 2015-06-23 | Qualcomm Incorporated | 3D floorplanning using 2D and 3D blocks |
US8890249B2 (en) | 2012-11-30 | 2014-11-18 | International Business Machines Corporation | Bulk FinFET ESD device |
US9536840B2 (en) | 2013-02-12 | 2017-01-03 | Qualcomm Incorporated | Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods |
US9041448B2 (en) | 2013-03-05 | 2015-05-26 | Qualcomm Incorporated | Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) and related methods |
US9177890B2 (en) * | 2013-03-07 | 2015-11-03 | Qualcomm Incorporated | Monolithic three dimensional integration of semiconductor integrated circuits |
US9171608B2 (en) | 2013-03-15 | 2015-10-27 | Qualcomm Incorporated | Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods |
US9620502B2 (en) | 2013-04-10 | 2017-04-11 | Samsung Electronics Co., Ltd. | Semiconductor device including an extended impurity region |
JP6120340B2 (ja) * | 2013-04-24 | 2017-04-26 | 国立研究開発法人産業技術総合研究所 | 異種材料接合を有する半導体デバイス |
US9019672B2 (en) | 2013-07-17 | 2015-04-28 | United Microelectronics Corporation | Chip with electrostatic discharge protection function |
CN104347613B (zh) * | 2013-08-09 | 2017-07-14 | 联华电子股份有限公司 | 具静电放电保护功能的芯片 |
US9245974B2 (en) | 2014-02-24 | 2016-01-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Performance boost by silicon epitaxy |
KR102241181B1 (ko) | 2014-07-14 | 2021-04-16 | 인텔 코포레이션 | 핀 기반 일렉트로닉스를 위한 고체 소스 확산 접합 |
KR102191221B1 (ko) | 2014-09-23 | 2020-12-16 | 삼성전자주식회사 | 저항 소자 및 이를 포함하는 반도체 소자 |
US9614023B2 (en) * | 2014-12-29 | 2017-04-04 | Globalfoundries Inc. | Substrate resistor with overlying gate structure |
CN104638014A (zh) * | 2015-02-10 | 2015-05-20 | 清华大学 | 一种无结型多掺杂场效应晶体管 |
US9627508B2 (en) * | 2015-04-14 | 2017-04-18 | Globalfoundries Inc. | Replacement channel TFET |
US9368484B1 (en) * | 2015-05-28 | 2016-06-14 | United Microelectronics Corp. | Fin type electrostatic discharge protection device |
US10084085B2 (en) | 2015-06-11 | 2018-09-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same |
CN107799421B (zh) * | 2016-09-05 | 2021-04-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
US10515969B2 (en) | 2016-11-17 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10340370B2 (en) | 2016-12-07 | 2019-07-02 | Qualcomm Incorporated | Asymmetric gated fin field effect transistor (FET) (finFET) diodes |
US9865729B1 (en) | 2016-12-20 | 2018-01-09 | Texas Instruments Incorporated | Laterally diffused metal oxide semiconductor with segmented gate oxide |
US10319662B2 (en) | 2017-02-01 | 2019-06-11 | Indian Institute Of Science | Non-planar electrostatic discharge (ESD) protection devices with nano heat sinks |
US10483258B2 (en) | 2017-02-25 | 2019-11-19 | Indian Institute Of Science | Semiconductor devices and methods to enhance electrostatic discharge (ESD) robustness, latch-up, and hot carrier immunity |
US10276718B2 (en) | 2017-08-31 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET having a relaxation prevention anchor |
KR102532118B1 (ko) * | 2018-03-20 | 2023-05-11 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US20210296306A1 (en) | 2020-03-18 | 2021-09-23 | Mavagail Technology, LLC | Esd protection for integrated circuit devices |
CN116075941A (zh) * | 2020-08-10 | 2023-05-05 | 斯兰纳亚洲有限公司 | 具有电压感测的超高电压电阻器 |
CN114665438B (zh) * | 2022-05-24 | 2022-09-06 | 浙江中控技术股份有限公司 | 接线端子板及包括该接线端子板的浪涌装置、安全栅装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851184A (ja) * | 1994-08-05 | 1996-02-20 | Kawasaki Steel Corp | 半導体装置 |
WO2004051749A1 (en) * | 2002-12-03 | 2004-06-17 | International Business Machines Corporation | Lateral lubistor structure and method |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5410228B2 (ja) * | 1973-08-20 | 1979-05-02 | ||
JP3185364B2 (ja) | 1992-06-03 | 2001-07-09 | 日産自動車株式会社 | 半導体装置 |
US5428578A (en) * | 1993-08-12 | 1995-06-27 | Texas Instruments Incorporated | Biasing circuit and method to achieve compaction and self-limiting erase in flash EEPROMs |
US5646808A (en) * | 1994-08-05 | 1997-07-08 | Kawasaki Steel Corporation | Electrostatic breakdown protection circuit for a semiconductor integrated circuit device |
JP2780649B2 (ja) * | 1994-09-30 | 1998-07-30 | 日本電気株式会社 | 半導体装置 |
US5610790A (en) * | 1995-01-20 | 1997-03-11 | Xilinx, Inc. | Method and structure for providing ESD protection for silicon on insulator integrated circuits |
US6027791A (en) * | 1996-09-30 | 2000-02-22 | Kyocera Corporation | Structure for mounting a wiring board |
JPH10294423A (ja) * | 1997-04-17 | 1998-11-04 | Nec Corp | 半導体装置 |
JP3993927B2 (ja) | 1997-12-22 | 2007-10-17 | 沖電気工業株式会社 | 静電破壊保護回路 |
JP3792445B2 (ja) * | 1999-03-30 | 2006-07-05 | 日本特殊陶業株式会社 | コンデンサ付属配線基板 |
JP2002016263A (ja) | 2000-04-25 | 2002-01-18 | Sony Corp | 面圧力分布検出装置 |
JP3514303B2 (ja) * | 2000-06-16 | 2004-03-31 | 日本電信電話株式会社 | ボルテージリファレンス回路 |
JP4727024B2 (ja) * | 2000-07-17 | 2011-07-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6413802B1 (en) * | 2000-10-23 | 2002-07-02 | The Regents Of The University Of California | Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture |
DE10103297A1 (de) | 2001-01-25 | 2002-08-22 | Infineon Technologies Ag | MOS-Transistor |
TW512510B (en) | 2001-12-25 | 2002-12-01 | Taiwan Semiconductor Mfg | Electrostatic discharge protection device |
TWI264106B (en) * | 2002-04-30 | 2006-10-11 | Winbond Electronics Corp | Static charge protection circuit of adopting gate-coupled MOSFET (metal-oxide-semiconductor field effect transistor) |
JP3997857B2 (ja) | 2002-07-16 | 2007-10-24 | 松下電器産業株式会社 | 半導体集積回路装置 |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US6809386B2 (en) * | 2002-08-29 | 2004-10-26 | Micron Technology, Inc. | Cascode I/O driver with improved ESD operation |
US7173310B2 (en) * | 2002-12-03 | 2007-02-06 | International Business Machines Corporation | Lateral lubistor structure and method |
TWI223888B (en) | 2003-09-02 | 2004-11-11 | Macronix Int Co Ltd | Electrostatic discharge protection device |
TWI220314B (en) | 2003-09-12 | 2004-08-11 | Grace Semiconductor Mfg Corp | Manufacturing method of deep sub-micron meter process of electrostatic discharge protection apparatus |
US7211864B2 (en) * | 2003-09-15 | 2007-05-01 | Seliskar John J | Fully-depleted castellated gate MOSFET device and method of manufacture thereof |
US6855588B1 (en) * | 2003-10-07 | 2005-02-15 | United Microelectronics Corp. | Method of fabricating a double gate MOSFET device |
US7569882B2 (en) * | 2003-12-23 | 2009-08-04 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile multibit memory cell and method of manufacturing thereof |
JP2005268609A (ja) * | 2004-03-19 | 2005-09-29 | Fuji Photo Film Co Ltd | 多層積層型多画素撮像素子及びテレビカメラ |
US7268369B2 (en) * | 2004-07-06 | 2007-09-11 | Fujifilm Corporation | Functional device and method for producing the same |
US7291515B2 (en) * | 2004-07-16 | 2007-11-06 | Fujifilm Corporation | Functional device and method for producing the same |
JP4559163B2 (ja) * | 2004-08-31 | 2010-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置用パッケージ基板およびその製造方法と半導体装置 |
JP2006093216A (ja) * | 2004-09-21 | 2006-04-06 | Toshiba Corp | 半導体装置 |
JP4800605B2 (ja) * | 2004-11-15 | 2011-10-26 | Okiセミコンダクタ株式会社 | 静電破壊保護回路 |
US7256460B2 (en) * | 2004-11-30 | 2007-08-14 | Texas Instruments Incorporated | Body-biased pMOS protection against electrostatic discharge |
US20060157791A1 (en) * | 2005-01-18 | 2006-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection device |
US7177619B2 (en) * | 2005-01-25 | 2007-02-13 | International Business Machines Corporation | Dual gate FinFET radio frequency switch and mixer |
US20060214233A1 (en) * | 2005-03-22 | 2006-09-28 | Ananthanarayanan Hari P | FinFET semiconductor device |
DE102005022763B4 (de) | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
US7348642B2 (en) * | 2005-08-03 | 2008-03-25 | International Business Machines Corporation | Fin-type field effect transistor |
US7405446B2 (en) * | 2005-09-27 | 2008-07-29 | Lattice Semiconductor Corporation | Electrostatic protection systems and methods |
-
2005
- 2005-08-19 DE DE102005039365.9A patent/DE102005039365B4/de not_active Expired - Fee Related
-
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- 2006-08-04 TW TW095128769A patent/TWI337376B/zh active
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- 2008-07-21 US US12/176,659 patent/US8476711B2/en active Active
-
2010
- 2010-09-17 JP JP2010209829A patent/JP5473848B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0851184A (ja) * | 1994-08-05 | 1996-02-20 | Kawasaki Steel Corp | 半導体装置 |
WO2004051749A1 (en) * | 2002-12-03 | 2004-06-17 | International Business Machines Corporation | Lateral lubistor structure and method |
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US8476711B2 (en) | 2013-07-02 |
DE102005039365B4 (de) | 2022-02-10 |
US20080277729A1 (en) | 2008-11-13 |
JP2011040768A (ja) | 2011-02-24 |
JP5473848B2 (ja) | 2014-04-16 |
JP2007053387A (ja) | 2007-03-01 |
TWI337376B (en) | 2011-02-11 |
US20070040221A1 (en) | 2007-02-22 |
US7919816B2 (en) | 2011-04-05 |
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