JP5086797B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5086797B2 JP5086797B2 JP2007334738A JP2007334738A JP5086797B2 JP 5086797 B2 JP5086797 B2 JP 5086797B2 JP 2007334738 A JP2007334738 A JP 2007334738A JP 2007334738 A JP2007334738 A JP 2007334738A JP 5086797 B2 JP5086797 B2 JP 5086797B2
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 230000005611 electricity Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
フィン15a〜15fは、例えば半導体基板14に対して垂直に形成され、FinFETM1〜M6のチャネル部となる。FinFETM1〜M6は、NチャネルMOSFETである。
ドレイン電極18は、ドレイン電極18のドレインD1側に形成されたドレインコンタクト22で、ワイヤ23を介して入力端子(図示せず)に接続されている。
ソース電極19は、ソース電極19のソースS1側に形成されたソースコンタクト24で、基準電位GNDに接続されている。
図2に示すように、半導体装置30は、内部回路31、例えばFinFETを有するロジック回路と、内部回路31に接続された入出力端子32と、入出力端子32と内部回路31の結線に接続された半導体装置10とを具備している。
これにより、入出力端子32にサージ電流が流れ込んだ場合、半導体装置10がオン状態になりサージ電流をバイバスするので、サージ電流が内部回路31に流れ込むのを阻止し、ESD保護素子として機能する。
サージではなく、しきい値以下の電圧が入出力端子32に印加された場合は、半導体装置10はオンしないので、入出力端子32を介して内部回路31との信号のやり取りが行なえる。
通常は、ゲートコンタクト20に一番近いFinFETM1が最初に動作し、一番遠いFinFETM6が最後に動作する。
このとき、最初にオンしたFinFETM1にサージ電流が集中し、短時間に大電流が流れて、FinFETM1が溶解する場合がある。
従って、サージ電流が集中しても、溶解することなく、ESD保護素子として機能させることが可能である。
次に、フォトリソグラフィ法により、SOI層13中のP型ウェル領域(図示せず)にFinFETM1〜M6のフィン15a〜15f、ドレイン電極18、ソース電極19に対応するパターンを有するレジスト膜42を形成する。
更に、シリコン酸化膜を、プラズマ窒化して誘電率を大きくする。これにより、フィン15a〜15fの側壁のシリコン酸化膜が、ゲート絶縁膜16となる(ドレイン電極18、ソース電極19の側壁膜は図示せず)。
次に、ポリシリコン膜上にハードマスクとなるシリコン窒化膜(図示せず)を形成し、シリコン窒化膜上に、フォトリソグラフィ法によりゲート電極17、ゲートコンタクトに対応するパターンを有するレジスト膜(図示せず)を形成し、レジスト膜をマスクとしてRIE法により、シリコン窒化膜をエッチングすることにより、ゲート電極17、ゲートコンタクト20に対応するパターンが転写されたシリコン窒化膜が得られる。
次に、斜め上方からn型不純物、例えば砒素(As)イオンを加速電圧10〜20keV、ドーズ量1×1013〜2×1015atoms/cm2程度イオン注入し、フィン15a〜15fのゲートG1〜G6を挟むように不純物領域を形成する。
これにより、FinFETM1〜M6のドレインD1〜D6およびS1〜S6が形成される。
FinFETM2とFinFETM3の間で、フィンの幅Wが変わる場合について説明したが、別のFinFETの間でフィンの幅Wを変えても構わない。
本実施例が実施例1と異なる点は、ゲートコンタクトをゲート電極の中央部に形成したことにある。
ゲートコンタクト52をゲート電極51の中央部に形成したことにより、ドレインコンタクト53がドレイン電極18の中央部に形成され、ソースコンタクト54がソース電極19の中央部に形成されている。
本実施例において、上記実施例1と同一の構成部分には同一符号を付してその説明は省略し、異なる部分についてのみ説明する。
本実施例が実施例1と異なる点は、ゲートコンタクトに近い方にあるFinFETのしきい値が、ゲートコンタクトから遠い方にあるFinFETのしきい値より高いことにある。
図10に示すように、フィンの幅とFinFETのしきい値との関係は、フィンの幅に応じて3つの領域、即ち領域I、領域II、領域IIIに分けられる。
フィン62a〜62fのキャリア濃度を変えるには、周知の方法により、キャリアとなる不純物イオンを、ドーズ量を調整して注入することにより行なう。
本実施例において、上記実施例3と同一の構成部分には同一符号を付してその説明は省略し、異なる部分についてのみ説明する。
本実施例が実施例3と異なる点は、ゲートコンタクトに近い方にあるFinFETを部分空乏型とし、ゲートコンタクトから遠い方にあるFinFETを完全空乏型としたことにある。
pn分離基板においてもウェル層の表面から分離層に至るまで掘り下げることにより、張り合わせ基板等と同様にFinFETを形成することができる。
ゲートコンタクト20から遠い方にあるフィンの幅は、全てW2で等しく形成されている。
11 支持体
12 絶縁層
13 SOI層
14 半導体基板
15a〜15f、55a〜55f、62a〜62f、72a〜72f フィン
16 ゲート絶縁膜
17、81a〜81d ゲート電極
18 ドレイン電極
19 ソース電極
20 ゲートコンタクト
21、23 ワイヤ
22 ドレインコンタクト
24 ソースコンタクト
30 半導体装置(LSI)
31 内部回路
32 入出力端子
41 シリコン窒化膜
42 レジスト膜
43 側壁膜
81 マルチフィンガーゲート電極
82 直列回路
G1〜G6 ゲート
D1〜D6、84、86 ドレイン
S1〜S6、83、85、87 ソース
M1〜M6、M1a〜M1d FinFET
Claims (5)
- 半導体層からなる複数のフィンと、
前記複数のフィンの側面上にゲート絶縁膜を介して設けられたゲートが、互いに電気的に接続されたゲート電極と、
前記ゲート電極を挟むように、前記複数のフィン内に設けられたソースおよびドレインと、
前記複数のソースを電気的に接続するソース電極と、
前記複数のドレインを電気的に接続するドレイン電極と、
前記ゲート電極に外部から電気を供給するためのゲートコンタクトと、
を備え、
前記複数のフィンのうち、前記ゲートコンタクトとの距離が小さい方にある前記フィンの幅が、前記ゲートコンタクトとの距離が大きい方にある前記フィンの幅よりも大きいことを特徴とする半導体装置。 - 前記複数のフィンのうち、前記ゲートコンタクトとの距離が一番小さい前記フィンの幅が、前記ゲートコンタクトとの距離が大きい方にある前記フィンの幅よりも大きいことを特徴とする半導体装置。
- 半導体層からなる複数のフィンと、
前記複数のフィンの側面上にゲート絶縁膜を介して設けられたゲートが、互いに電気的に接続されたゲート電極と、
前記ゲート電極を挟むように、前記複数のフィン内に設けられたソースおよびドレインと、
前記複数のソースを電気的に接続するソース電極と、
前記複数のドレインを電気的に接続するドレイン電極と、
前記ゲート電極に外部から電気を供給するためのゲートコンタクトと、
を備え、
前記複数のフィンに形成されたトランジスタのうち、前記ゲートコンタクトとの距離が小さい方にある前記トランジスタのしきい値が、前記ゲートコンタクトとの距離が大きい方にある前記トランジスタのしきい値よりも高いことを特徴とする半導体装置。 - 前記複数のフィンに形成されたトランジスタのうち、前記ゲートコンタクトとの距離が一番小さい前記トランジスタのしきい値が、前記ゲートコンタクトとの距離が大きい方にある前記トランジスタのしきい値よりも高いことを特徴とする請求項3に記載の半導体装置。
- 前記複数のフィンのうち、前記ゲートコンタクトとの距離が一番小さい前記フィンの幅が、前記ゲートコンタクトとの距離が大きい方にある前記フィンの幅よりも大きいことを特徴とする請求項3または請求項4に記載の半導体装置。
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JP2010225768A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 半導体装置 |
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CN103632944B (zh) * | 2012-08-27 | 2016-08-03 | 中国科学院微电子研究所 | 栅电极的形成方法 |
US9209265B2 (en) | 2012-11-15 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | ESD devices comprising semiconductor fins |
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US9236374B2 (en) | 2014-01-02 | 2016-01-12 | Globalfoundries Inc. | Fin contacted electrostatic discharge (ESD) devices with improved heat distribution |
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