JP4548560B2 - フォーカスリングおよびそのための方法 - Google Patents
フォーカスリングおよびそのための方法 Download PDFInfo
- Publication number
- JP4548560B2 JP4548560B2 JP2000525906A JP2000525906A JP4548560B2 JP 4548560 B2 JP4548560 B2 JP 4548560B2 JP 2000525906 A JP2000525906 A JP 2000525906A JP 2000525906 A JP2000525906 A JP 2000525906A JP 4548560 B2 JP4548560 B2 JP 4548560B2
- Authority
- JP
- Japan
- Prior art keywords
- focus ring
- plasma processing
- chuck
- plasma
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000012545 processing Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims description 55
- 238000005260 corrosion Methods 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 21
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 37
- 150000002500 ions Chemical class 0.000 description 23
- 230000002829 reductive effect Effects 0.000 description 15
- 238000011109 contamination Methods 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Special Wing (AREA)
- Developing Agents For Electrophotography (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Glass Compositions (AREA)
- Adornments (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/993,791 | 1997-12-19 | ||
| US08/993,791 US6039836A (en) | 1997-12-19 | 1997-12-19 | Focus rings |
| PCT/US1998/026412 WO1999033087A1 (en) | 1997-12-19 | 1998-12-11 | Focus rings and methods therefor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001527285A JP2001527285A (ja) | 2001-12-25 |
| JP2001527285A5 JP2001527285A5 (https=) | 2006-06-08 |
| JP4548560B2 true JP4548560B2 (ja) | 2010-09-22 |
Family
ID=25539940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000525906A Expired - Fee Related JP4548560B2 (ja) | 1997-12-19 | 1998-12-11 | フォーカスリングおよびそのための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6039836A (https=) |
| EP (1) | EP1042783B1 (https=) |
| JP (1) | JP4548560B2 (https=) |
| KR (1) | KR100635693B1 (https=) |
| AT (1) | ATE273562T1 (https=) |
| DE (1) | DE69825630T2 (https=) |
| IL (1) | IL136874A (https=) |
| WO (1) | WO1999033087A1 (https=) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US8114245B2 (en) * | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
| US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| US6489249B1 (en) * | 2000-06-20 | 2002-12-03 | Infineon Technologies Ag | Elimination/reduction of black silicon in DT etch |
| JP3764639B2 (ja) * | 2000-09-13 | 2006-04-12 | 株式会社日立製作所 | プラズマ処理装置および半導体装置の製造方法 |
| TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP3393118B2 (ja) * | 2000-12-21 | 2003-04-07 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置および半導体装置の製造方法 |
| US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| JP3555084B2 (ja) * | 2001-06-11 | 2004-08-18 | Necエレクトロニクス株式会社 | 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置 |
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| US6652713B2 (en) * | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| DE10147998A1 (de) * | 2001-09-28 | 2003-04-10 | Unaxis Balzers Ag | Verfahren und Vorrichtung zur Erzeugung eines Plasmas |
| TW554465B (en) * | 2002-08-27 | 2003-09-21 | Winbond Electronics Corp | Apparatus for supporting wafer in semiconductor process |
| US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| JP4286025B2 (ja) * | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
| WO2004095529A2 (en) * | 2003-03-21 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
| US6944006B2 (en) * | 2003-04-03 | 2005-09-13 | Applied Materials, Inc. | Guard for electrostatic chuck |
| DE10319894A1 (de) * | 2003-04-28 | 2004-11-25 | Infineon Technologies Ag | Dielektrischer Fokusring |
| US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
| US20050279457A1 (en) * | 2004-06-04 | 2005-12-22 | Tokyo Electron Limited | Plasma processing apparatus and method, and plasma control unit |
| KR100610010B1 (ko) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | 반도체 식각 장치 |
| US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US20070029193A1 (en) * | 2005-08-03 | 2007-02-08 | Tokyo Electron Limited | Segmented biased peripheral electrode in plasma processing method and apparatus |
| KR101218114B1 (ko) * | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| KR100694796B1 (ko) * | 2005-09-26 | 2007-03-14 | 세메스 주식회사 | 평면표시패널 처리챔버의 기액 분리장치 |
| US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
| KR100809957B1 (ko) * | 2006-09-20 | 2008-03-07 | 삼성전자주식회사 | 반도체 식각장치 |
| US20080194113A1 (en) * | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
| US7749398B2 (en) * | 2006-09-29 | 2010-07-06 | Tokyo Electron Limited | Selective-redeposition sources for calibrating a plasma process |
| US7776748B2 (en) * | 2006-09-29 | 2010-08-17 | Tokyo Electron Limited | Selective-redeposition structures for calibrating a plasma process |
| US7943007B2 (en) | 2007-01-26 | 2011-05-17 | Lam Research Corporation | Configurable bevel etcher |
| JP4659771B2 (ja) * | 2007-02-13 | 2011-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8343305B2 (en) * | 2007-09-04 | 2013-01-01 | Lam Research Corporation | Method and apparatus for diagnosing status of parts in real time in plasma processing equipment |
| US8900405B2 (en) * | 2007-11-14 | 2014-12-02 | Applied Materials, Inc. | Plasma immersion ion implantation reactor with extended cathode process ring |
| US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
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| JP7760511B2 (ja) | 2020-02-11 | 2025-10-27 | ラム リサーチ コーポレーション | ウエハベベル/エッジ上の堆積を制御するためのキャリアリング設計 |
| JP2021180283A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | 載置台アセンブリ、基板処理装置および基板処理方法 |
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| JP2024514105A (ja) * | 2021-04-07 | 2024-03-28 | ラム リサーチ コーポレーション | プラズマシース特性を制御するためのシステムおよび方法 |
| CN115249606B (zh) * | 2021-04-28 | 2025-02-14 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置、下电极组件及其形成方法 |
| CN120565385A (zh) * | 2021-09-08 | 2025-08-29 | 北京屹唐半导体科技股份有限公司 | 用于清洁等离子体加工设备的聚焦环的导电构件 |
| USD1121576S1 (en) | 2022-07-14 | 2026-04-07 | Applied Materials Inc. | Purge ring for a substrate processing chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132623A (ja) * | 1983-01-20 | 1984-07-30 | Ulvac Corp | ドライエツチング用電極 |
| JP2675613B2 (ja) * | 1989-04-11 | 1997-11-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
| JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
| JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
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| JP3535309B2 (ja) * | 1996-04-10 | 2004-06-07 | 東京エレクトロン株式会社 | 減圧処理装置 |
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| JP3424903B2 (ja) * | 1997-01-23 | 2003-07-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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1997
- 1997-12-19 US US08/993,791 patent/US6039836A/en not_active Expired - Lifetime
-
1998
- 1998-12-11 KR KR1020007006568A patent/KR100635693B1/ko not_active Expired - Lifetime
- 1998-12-11 WO PCT/US1998/026412 patent/WO1999033087A1/en not_active Ceased
- 1998-12-11 DE DE69825630T patent/DE69825630T2/de not_active Expired - Lifetime
- 1998-12-11 AT AT98963099T patent/ATE273562T1/de active
- 1998-12-11 JP JP2000525906A patent/JP4548560B2/ja not_active Expired - Fee Related
- 1998-12-11 EP EP98963099A patent/EP1042783B1/en not_active Expired - Lifetime
- 1998-12-11 IL IL13687498A patent/IL136874A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL136874A (en) | 2003-07-31 |
| EP1042783B1 (en) | 2004-08-11 |
| WO1999033087A1 (en) | 1999-07-01 |
| KR20010033185A (ko) | 2001-04-25 |
| ATE273562T1 (de) | 2004-08-15 |
| IL136874A0 (en) | 2001-06-14 |
| KR100635693B1 (ko) | 2006-10-17 |
| JP2001527285A (ja) | 2001-12-25 |
| DE69825630D1 (de) | 2004-09-16 |
| DE69825630T2 (de) | 2005-09-15 |
| US6039836A (en) | 2000-03-21 |
| EP1042783A1 (en) | 2000-10-11 |
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