DE69825630T2 - Fokusringe - Google Patents
Fokusringe Download PDFInfo
- Publication number
- DE69825630T2 DE69825630T2 DE69825630T DE69825630T DE69825630T2 DE 69825630 T2 DE69825630 T2 DE 69825630T2 DE 69825630 T DE69825630 T DE 69825630T DE 69825630 T DE69825630 T DE 69825630T DE 69825630 T2 DE69825630 T2 DE 69825630T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- focusing ring
- focus ring
- substrate
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000012545 processing Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 description 24
- 230000003628 erosive effect Effects 0.000 description 19
- 238000009832 plasma treatment Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Special Wing (AREA)
- Developing Agents For Electrophotography (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Glass Compositions (AREA)
- Adornments (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/993,791 US6039836A (en) | 1997-12-19 | 1997-12-19 | Focus rings |
| US993791 | 1997-12-19 | ||
| PCT/US1998/026412 WO1999033087A1 (en) | 1997-12-19 | 1998-12-11 | Focus rings and methods therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69825630D1 DE69825630D1 (de) | 2004-09-16 |
| DE69825630T2 true DE69825630T2 (de) | 2005-09-15 |
Family
ID=25539940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69825630T Expired - Lifetime DE69825630T2 (de) | 1997-12-19 | 1998-12-11 | Fokusringe |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6039836A (https=) |
| EP (1) | EP1042783B1 (https=) |
| JP (1) | JP4548560B2 (https=) |
| KR (1) | KR100635693B1 (https=) |
| AT (1) | ATE273562T1 (https=) |
| DE (1) | DE69825630T2 (https=) |
| IL (1) | IL136874A (https=) |
| WO (1) | WO1999033087A1 (https=) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
| US8114245B2 (en) * | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
| US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| US6489249B1 (en) * | 2000-06-20 | 2002-12-03 | Infineon Technologies Ag | Elimination/reduction of black silicon in DT etch |
| JP3764639B2 (ja) * | 2000-09-13 | 2006-04-12 | 株式会社日立製作所 | プラズマ処理装置および半導体装置の製造方法 |
| TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP3393118B2 (ja) * | 2000-12-21 | 2003-04-07 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置および半導体装置の製造方法 |
| US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| JP3555084B2 (ja) * | 2001-06-11 | 2004-08-18 | Ｎｅｃエレクトロニクス株式会社 | 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置 |
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| US6652713B2 (en) * | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| DE10147998A1 (de) * | 2001-09-28 | 2003-04-10 | Unaxis Balzers Ag | Verfahren und Vorrichtung zur Erzeugung eines Plasmas |
| TW554465B (en) * | 2002-08-27 | 2003-09-21 | Winbond Electronics Corp | Apparatus for supporting wafer in semiconductor process |
| US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| JP4286025B2 (ja) * | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
| WO2004095529A2 (en) * | 2003-03-21 | 2004-11-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
| US6944006B2 (en) * | 2003-04-03 | 2005-09-13 | Applied Materials, Inc. | Guard for electrostatic chuck |
| DE10319894A1 (de) * | 2003-04-28 | 2004-11-25 | Infineon Technologies Ag | Dielektrischer Fokusring |
| US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
| US20050279457A1 (en) * | 2004-06-04 | 2005-12-22 | Tokyo Electron Limited | Plasma processing apparatus and method, and plasma control unit |
| KR100610010B1 (ko) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | 반도체 식각 장치 |
| US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| US7713379B2 (en) * | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US20070029193A1 (en) * | 2005-08-03 | 2007-02-08 | Tokyo Electron Limited | Segmented biased peripheral electrode in plasma processing method and apparatus |
| KR101218114B1 (ko) * | 2005-08-04 | 2013-01-18 | 주성엔지니어링(주) | 플라즈마 식각 장치 |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| KR100694796B1 (ko) * | 2005-09-26 | 2007-03-14 | 세메스 주식회사 | 평면표시패널 처리챔버의 기액 분리장치 |
| US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
| KR100809957B1 (ko) * | 2006-09-20 | 2008-03-07 | 삼성전자주식회사 | 반도체 식각장치 |
| US20080194113A1 (en) * | 2006-09-20 | 2008-08-14 | Samsung Electronics Co., Ltd. | Methods and apparatus for semiconductor etching including an electro static chuck |
| US7749398B2 (en) * | 2006-09-29 | 2010-07-06 | Tokyo Electron Limited | Selective-redeposition sources for calibrating a plasma process |
| US7776748B2 (en) * | 2006-09-29 | 2010-08-17 | Tokyo Electron Limited | Selective-redeposition structures for calibrating a plasma process |
| US7943007B2 (en) | 2007-01-26 | 2011-05-17 | Lam Research Corporation | Configurable bevel etcher |
| JP4659771B2 (ja) * | 2007-02-13 | 2011-03-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8343305B2 (en) * | 2007-09-04 | 2013-01-01 | Lam Research Corporation | Method and apparatus for diagnosing status of parts in real time in plasma processing equipment |
| US8900405B2 (en) * | 2007-11-14 | 2014-12-02 | Applied Materials, Inc. | Plasma immersion ion implantation reactor with extended cathode process ring |
| US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| KR101624123B1 (ko) * | 2008-10-31 | 2016-05-25 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버의 하부 전극 어셈블리 |
| US8402918B2 (en) * | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| KR200464037Y1 (ko) * | 2009-10-13 | 2012-12-07 | 램 리써치 코포레이션 | 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극 |
| JP5808750B2 (ja) * | 2009-11-30 | 2015-11-10 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 傾斜側壁を備える静電チャック |
| DE202010015933U1 (de) | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
| US9443753B2 (en) * | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
| US9412579B2 (en) | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
| US9997381B2 (en) | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
| JP6069654B2 (ja) * | 2013-03-29 | 2017-02-01 | Ｓｐｐテクノロジーズ株式会社 | 被処理基板のプラズマ処理用載置台及びこれを用いたプラズマ処理装置 |
| US9449797B2 (en) | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
| US10804081B2 (en) | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| SG11201703114QA (en) | 2014-10-17 | 2017-06-29 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
| US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| CN105990085B (zh) * | 2015-03-03 | 2018-03-30 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀设备、聚焦环及其制作方法 |
| US10017857B2 (en) | 2015-05-02 | 2018-07-10 | Applied Materials, Inc. | Method and apparatus for controlling plasma near the edge of a substrate |
| US10163610B2 (en) * | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| JP6595335B2 (ja) * | 2015-12-28 | 2019-10-23 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| KR101722382B1 (ko) * | 2016-01-08 | 2017-04-03 | 주식회사 윈텔 | 플라즈마 처리 장치 |
| US10109464B2 (en) | 2016-01-11 | 2018-10-23 | Applied Materials, Inc. | Minimization of ring erosion during plasma processes |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US10685862B2 (en) | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
| USD797691S1 (en) | 2016-04-14 | 2017-09-19 | Applied Materials, Inc. | Composite edge ring |
| CN108281342B (zh) * | 2017-01-05 | 2020-01-21 | 东京毅力科创株式会社 | 等离子体处理装置 |
| US11702748B2 (en) * | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
| JP6969182B2 (ja) * | 2017-07-06 | 2021-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| KR102063108B1 (ko) * | 2017-10-30 | 2020-01-08 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| SG11202010375QA (en) | 2018-04-20 | 2020-11-27 | Lam Res Corp | Edge exclusion control |
| KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
| KR102111504B1 (ko) * | 2018-10-15 | 2020-05-18 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| KR102214333B1 (ko) | 2019-06-27 | 2021-02-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
| JP7760511B2 (ja) | 2020-02-11 | 2025-10-27 | ラム リサーチ コーポレーション | ウエハベベル／エッジ上の堆積を制御するためのキャリアリング設計 |
| JP2021180283A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | 載置台アセンブリ、基板処理装置および基板処理方法 |
| WO2021262583A1 (en) * | 2020-06-25 | 2021-12-30 | Lam Research Corporation | Carrier rings with radially-varied plasma impedance |
| JP2024514105A (ja) * | 2021-04-07 | 2024-03-28 | ラム リサーチ コーポレーション | プラズマシース特性を制御するためのシステムおよび方法 |
| CN115249606B (zh) * | 2021-04-28 | 2025-02-14 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置、下电极组件及其形成方法 |
| CN120565385A (zh) * | 2021-09-08 | 2025-08-29 | 北京屹唐半导体科技股份有限公司 | 用于清洁等离子体加工设备的聚焦环的导电构件 |
| USD1121576S1 (en) | 2022-07-14 | 2026-04-07 | Applied Materials Inc. | Purge ring for a substrate processing chamber |
| US20240018648A1 (en) * | 2022-07-14 | 2024-01-18 | Applied Materials, Inc. | Purge Ring for Reduced Substrate Backside Deposition |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132623A (ja) * | 1983-01-20 | 1984-07-30 | Ulvac Corp | ドライエツチング用電極 |
| JP2675613B2 (ja) * | 1989-04-11 | 1997-11-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR100297358B1 (ko) * | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
| JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
| JP2659919B2 (ja) * | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
| US5474649A (en) * | 1994-03-08 | 1995-12-12 | Applied Materials, Inc. | Plasma processing apparatus employing a textured focus ring |
| JP3535309B2 (ja) * | 1996-04-10 | 2004-06-07 | 東京エレクトロン株式会社 | 減圧処理装置 |
| US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
| JP3424903B2 (ja) * | 1997-01-23 | 2003-07-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5985033A (en) * | 1997-07-11 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for delivering a gas |
-
1997
- 1997-12-19 US US08/993,791 patent/US6039836A/en not_active Expired - Lifetime
-
1998
- 1998-12-11 KR KR1020007006568A patent/KR100635693B1/ko not_active Expired - Lifetime
- 1998-12-11 WO PCT/US1998/026412 patent/WO1999033087A1/en not_active Ceased
- 1998-12-11 DE DE69825630T patent/DE69825630T2/de not_active Expired - Lifetime
- 1998-12-11 AT AT98963099T patent/ATE273562T1/de active
- 1998-12-11 JP JP2000525906A patent/JP4548560B2/ja not_active Expired - Fee Related
- 1998-12-11 EP EP98963099A patent/EP1042783B1/en not_active Expired - Lifetime
- 1998-12-11 IL IL13687498A patent/IL136874A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IL136874A (en) | 2003-07-31 |
| EP1042783B1 (en) | 2004-08-11 |
| WO1999033087A1 (en) | 1999-07-01 |
| JP4548560B2 (ja) | 2010-09-22 |
| KR20010033185A (ko) | 2001-04-25 |
| ATE273562T1 (de) | 2004-08-15 |
| IL136874A0 (en) | 2001-06-14 |
| KR100635693B1 (ko) | 2006-10-17 |
| JP2001527285A (ja) | 2001-12-25 |
| DE69825630D1 (de) | 2004-09-16 |
| US6039836A (en) | 2000-03-21 |
| EP1042783A1 (en) | 2000-10-11 |
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