ATE273562T1 - Fokusringe - Google Patents

Fokusringe

Info

Publication number
ATE273562T1
ATE273562T1 AT98963099T AT98963099T ATE273562T1 AT E273562 T1 ATE273562 T1 AT E273562T1 AT 98963099 T AT98963099 T AT 98963099T AT 98963099 T AT98963099 T AT 98963099T AT E273562 T1 ATE273562 T1 AT E273562T1
Authority
AT
Austria
Prior art keywords
focus ring
chuck
plasma
substrate
processing chamber
Prior art date
Application number
AT98963099T
Other languages
English (en)
Inventor
Rajinder Dhindsa
Ken Tokunaga
Vikram Singh
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE273562T1 publication Critical patent/ATE273562T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Special Wing (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Glass Compositions (AREA)
  • Adornments (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
AT98963099T 1997-12-19 1998-12-11 Fokusringe ATE273562T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/993,791 US6039836A (en) 1997-12-19 1997-12-19 Focus rings
PCT/US1998/026412 WO1999033087A1 (en) 1997-12-19 1998-12-11 Focus rings and methods therefor

Publications (1)

Publication Number Publication Date
ATE273562T1 true ATE273562T1 (de) 2004-08-15

Family

ID=25539940

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98963099T ATE273562T1 (de) 1997-12-19 1998-12-11 Fokusringe

Country Status (8)

Country Link
US (1) US6039836A (de)
EP (1) EP1042783B1 (de)
JP (1) JP4548560B2 (de)
KR (1) KR100635693B1 (de)
AT (1) ATE273562T1 (de)
DE (1) DE69825630T2 (de)
IL (1) IL136874A (de)
WO (1) WO1999033087A1 (de)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
JP3393118B2 (ja) * 2000-12-21 2003-04-07 株式会社半導体先端テクノロジーズ プラズマエッチング装置および半導体装置の製造方法
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
DE10147998A1 (de) * 2001-09-28 2003-04-10 Unaxis Balzers Ag Verfahren und Vorrichtung zur Erzeugung eines Plasmas
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
JP4991286B2 (ja) * 2003-03-21 2012-08-01 東京エレクトロン株式会社 処理中の基板裏面堆積を減らす方法および装置。
US6944006B2 (en) * 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
DE10319894A1 (de) * 2003-04-28 2004-11-25 Infineon Technologies Ag Dielektrischer Fokusring
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US20050279457A1 (en) * 2004-06-04 2005-12-22 Tokyo Electron Limited Plasma processing apparatus and method, and plasma control unit
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
KR100694796B1 (ko) * 2005-09-26 2007-03-14 세메스 주식회사 평면표시패널 처리챔버의 기액 분리장치
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
KR100809957B1 (ko) * 2006-09-20 2008-03-07 삼성전자주식회사 반도체 식각장치
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US7943007B2 (en) 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
JP4659771B2 (ja) * 2007-02-13 2011-03-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8343305B2 (en) * 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
US8900405B2 (en) * 2007-11-14 2014-12-02 Applied Materials, Inc. Plasma immersion ion implantation reactor with extended cathode process ring
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
TWM412457U (en) * 2009-09-18 2011-09-21 Lam Res Corp Showerhead electrode for use in a plasma reaction chamber and showerhead electrode assembly
KR200464037Y1 (ko) * 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
WO2011065965A2 (en) * 2009-11-30 2011-06-03 Lam Research Corporation An electrostatic chuck with an angled sidewall
DE202010015933U1 (de) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
JP6069654B2 (ja) * 2013-03-29 2017-02-01 Ｓｐｐテクノロジーズ株式会社 被処理基板のプラズマ処理用載置台及びこれを用いたプラズマ処理装置
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
CN113579992A (zh) 2014-10-17 2021-11-02 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN105990085B (zh) * 2015-03-03 2018-03-30 中微半导体设备(上海)有限公司 等离子体刻蚀设备、聚焦环及其制作方法
US10017857B2 (en) 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101722382B1 (ko) * 2016-01-08 2017-04-03 주식회사 윈텔 플라즈마 처리 장치
US10109464B2 (en) 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
USD797691S1 (en) 2016-04-14 2017-09-19 Applied Materials, Inc. Composite edge ring
US20180190501A1 (en) * 2017-01-05 2018-07-05 Tokyo Electron Limited Plasma processing apparatus
US11702748B2 (en) * 2017-03-03 2023-07-18 Lam Research Corporation Wafer level uniformity control in remote plasma film deposition
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
KR102063108B1 (ko) * 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
KR102111504B1 (ko) * 2018-10-15 2020-05-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
JP2021180283A (ja) * 2020-05-15 2021-11-18 東京エレクトロン株式会社 載置台アセンブリ、基板処理装置および基板処理方法
CN115249606A (zh) * 2021-04-28 2022-10-28 中微半导体设备(上海)股份有限公司 等离子体处理装置、下电极组件及其形成方法
US20240018648A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Purge Ring for Reduced Substrate Backside Deposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
JP2675613B2 (ja) * 1989-04-11 1997-11-12 東京エレクトロン株式会社 プラズマ処理装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
JP3424903B2 (ja) * 1997-01-23 2003-07-07 東京エレクトロン株式会社 プラズマ処理装置
US5985033A (en) * 1997-07-11 1999-11-16 Applied Materials, Inc. Apparatus and method for delivering a gas

Also Published As

Publication number Publication date
DE69825630T2 (de) 2005-09-15
EP1042783B1 (de) 2004-08-11
EP1042783A1 (de) 2000-10-11
IL136874A (en) 2003-07-31
JP4548560B2 (ja) 2010-09-22
US6039836A (en) 2000-03-21
WO1999033087A1 (en) 1999-07-01
KR20010033185A (ko) 2001-04-25
IL136874A0 (en) 2001-06-14
DE69825630D1 (de) 2004-09-16
JP2001527285A (ja) 2001-12-25
KR100635693B1 (ko) 2006-10-17

Similar Documents

Publication Publication Date Title
ATE273562T1 (de) Fokusringe
WO2002025695A3 (en) Tunable focus ring for plasma processing
WO2004102638A3 (en) Rf pulsing of a narrow gap capacitively coupled reactor
WO2003009363A1 (en) Plasma processor and plasma processing method
TW200620455A (en) Yttria insulator ring for use inside a plasma chamber
ATE552923T1 (de) Plasmabehandlungsreaktor
EP0235770A3 (en) Device for the plasma processing of substrates in a high frequency excited plasma discharge
WO2004023510A3 (en) Capacitively coupled plasma reactor with uniform radial distribution of plasma
WO2002023588A3 (en) Capacitively coupled plasma reactor
TW279240B (en) Parallel-plate icp source/rf bias electrode head
KR970003557A (ko) 재료 처리용 이중 주파수의 용량성 결합 플라즈마 리액터
MY126731A (en) Lower electrode design for higher uniformity
WO2001071796A3 (en) Method for electrochemical polishing of a conductive material
KR970003610A (ko) 플라즈마 처리장치
TW200515507A (en) Plasma control using dual cathode frequency mixing
WO2005020264A3 (en) Multiple frequency plasma etch reactor
WO2004012235A3 (en) Atmospheric pressure plasma processing reactor
ATE481746T1 (de) Opto-elektrische vorrichtungen
WO2003010809A1 (fr) Dispositif de traitement au plasma et table de montage de substrat
WO2003079404A3 (en) An improved substrate holder for plasma processing
JPS5633839A (en) Plasma treatment and device therefor
TW370701B (en) Monopolar electrostatic chuck having an electrode in contact with a workpiece
EP0887836A3 (de) Gerät zur Herstellung elektronischer Vorrichtungen
CA2048470A1 (en) Plasma processing apparatus having an electrode enclosing the space between cathode and anode
US20030153195A1 (en) Method and apparatus for providing modulated bias power to a plasma etch reactor

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1042783

Country of ref document: EP