JP6595335B2 - プラズマ処理装置 - Google Patents
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- JP6595335B2 JP6595335B2 JP2015257260A JP2015257260A JP6595335B2 JP 6595335 B2 JP6595335 B2 JP 6595335B2 JP 2015257260 A JP2015257260 A JP 2015257260A JP 2015257260 A JP2015257260 A JP 2015257260A JP 6595335 B2 JP6595335 B2 JP 6595335B2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- H01J37/32082—Radio frequency generated discharge
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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Description
[項1]
減圧可能な真空容器と、上記真空容器に接続されるプラズマ生成用のガスを供給する第1のガス供給部と、真空排気部と、上記真空容器に接続される第1のプラズマ生成用の電磁波を供給する電磁波供給部と、ウエハを載置するステージと、上記ステージに接続される第1の高周波電源と、から構成されるプラズマ処理装置であって、
上記ステージに第2の高周波電源が接続され、
上記ステージの外周部にサセプタが設置され、
上記サセプタには、第2のガスが通りかつ第2のガス供給部が接続されたガス流路と、上記第2の高周波電源に接続され、かつ誘電体に覆われた高周波電極と、誘電体に覆われた接地電極とが設けられ、
上記第2の高周波電源から電力を供給し、上記サセプタの上記第2のガスが通過する上記ガス流路にて第2のプラズマを生成し、上記サセプタからウエハ外周部にラジカルを供給する、プラズマ処理装置。
[項2]
減圧可能な真空容器と、上記真空容器に接続されるプラズマ生成用のガスを供給する第1のガス供給部と、真空排気部と、上記真空容器に接続される第1のプラズマ生成用の電磁波を供給する電磁波供給部と、ウエハを載置するステージと、上記ステージに接続される第1の高周波電源と、から構成されるプラズマ処理装置であって、
上記ステージに第2の高周波電源が接続され、
上記ステージの外周部にサセプタが設置され、
上記サセプタには、第2のガスが通りかつ第2のガス供給部が接続されたガス流路と、誘電体に覆われた接地電極とが設けられ、
上記第1の高周波電源と上記第2の高周波電源とから電力を供給し、上記サセプタの上記第2のガスが通過する上記ガス流路にて第2のプラズマを生成し、上記サセプタから上記ウエハの外周部にラジカルを供給する、プラズマ処理装置。
3 高周波電極
4 サセプタ(ウエハ保持体)
4a 開口部
6 第2のガス供給部
7 第2の高周波電源
8 ウエハ載置電極
9 真空排気部
10 第1の高周波電源
11 第1のプラズマ
14 電磁波供給部
15 第1のガス供給部
17 ウエハ
19 ステージ
25 真空容器
Claims (10)
- 内部で半導体ウエハにプラズマ処理が行われる真空容器と、
前記真空容器に接続され、前記真空容器内に第1のプラズマを生成する第1のガスを供給する第1のガス供給部と、
前記第1のプラズマを生成する電磁波を供給する電磁波供給部と、
前記半導体ウエハが載置されるステージと、
前記ステージに接続された第1の高周波電源と、
前記ステージの外周部に設けられ、開口部が形成されたウエハ保持体と、
前記ウエハ保持体に接続された第2の高周波電源と、
前記ウエハ保持体の内部に第2のガスを供給する第2のガス供給部と、
前記真空容器内を排気して減圧する真空排気部と、
を有し、
前記ウエハ保持体の内部には、
誘電体によって覆われ、前記第2の高周波電源に接続された高周波電極と、
誘電体によって覆われ、前記高周波電極と対向して配置された第1の接地電極と、
が設けられ、
前記第2の高周波電源から高周波電力が供給され、かつ前記第2のガス供給部から前記第2のガスが供給されて前記ウエハ保持体の内部で第2のプラズマを生成する、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記高周波電極および前記第1の接地電極は、リング状である、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ウエハ保持体は、石英によって形成されている、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ステージには、前記半導体ウエハに入射するイオンエネルギーを調整する高周波電力を供給する前記第1の高周波電源が接続され、前記第1の高周波電源に第1の整合器が接続され、前記第2の高周波電源に第2の整合器が接続されている、プラズマ処理装置。 - 請求項4に記載のプラズマ処理装置において、
前記第1の整合器には、前記第2の高周波電源の周波数成分を除去するフィルタが含まれ、
前記第2の整合器には、前記第1の高周波電源の周波数成分を除去するフィルタが含まれている、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ウエハ保持体は、リング状に形成され、
前記開口部は、スリット状に形成され、かつ前記リング状のウエハ保持体の周方向に沿って形成されている、プラズマ処理装置。 - 請求項6に記載のプラズマ処理装置において、
前記スリット状の開口部の幅は、前記第2のプラズマが生成される放電空間の幅よりも狭い、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ウエハ保持体は、リング状に形成され、
前記開口部は、前記リング状のウエハ保持体の周方向に沿って個別に複数形成されている、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ウエハ保持体の内部に供給される前記第2のガスの流路が、前記ウエハ保持体の周方向に対して複数に分岐して設けられ、
前記第2のガス供給部から前記複数の第2のガスの流路それぞれに独立して前記第2のガスを供給する、プラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記ステージには、前記半導体ウエハに入射するイオンエネルギーを調整する高周波電力を供給する前記第1の高周波電源が接続され、
前記ステージと、前記第2の高周波電源が接続された前記高周波電極との間に、第2の接地電極が設けられている、プラズマ処理装置。
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US15/273,812 US10217613B2 (en) | 2015-12-28 | 2016-09-23 | Plasma processing apparatus |
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JP6539113B2 (ja) | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US20230402255A1 (en) * | 2022-06-09 | 2023-12-14 | Tokyo Electron Limited | Equipment and Method for Improved Edge Uniformity of Plasma Processing of Wafers |
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JPH09162169A (ja) | 1995-12-05 | 1997-06-20 | Yasuhiro Horiike | プラズマ処理方法及びその装置 |
US6039836A (en) * | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
JP4056144B2 (ja) * | 1998-09-10 | 2008-03-05 | 株式会社エフオーアイ | プラズマ処理装置 |
JP3514186B2 (ja) * | 1999-09-16 | 2004-03-31 | 日新電機株式会社 | 薄膜形成方法及び装置 |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
WO2003079404A2 (en) * | 2002-03-12 | 2003-09-25 | Tokyo Electron Limited | An improved substrate holder for plasma processing |
JP2004022822A (ja) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | プラズマ処理方法および装置 |
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JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US20070221332A1 (en) * | 2006-03-22 | 2007-09-27 | Tokyo Electron Limited | Plasma processing apparatus |
US20080202689A1 (en) * | 2006-12-08 | 2008-08-28 | Tes Co., Ltd. | Plasma processing apparatus |
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JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5496568B2 (ja) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR101693673B1 (ko) * | 2010-06-23 | 2017-01-09 | 주성엔지니어링(주) | 가스분배수단 및 이를 포함한 기판처리장치 |
JP2012049376A (ja) * | 2010-08-27 | 2012-03-08 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP5710318B2 (ja) * | 2011-03-03 | 2015-04-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5819154B2 (ja) * | 2011-10-06 | 2015-11-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置 |
US20170278730A1 (en) * | 2016-03-28 | 2017-09-28 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
US9852889B1 (en) * | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
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