JP6785377B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP6785377B2 JP6785377B2 JP2019527274A JP2019527274A JP6785377B2 JP 6785377 B2 JP6785377 B2 JP 6785377B2 JP 2019527274 A JP2019527274 A JP 2019527274A JP 2019527274 A JP2019527274 A JP 2019527274A JP 6785377 B2 JP6785377 B2 JP 6785377B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- electrode
- power supply
- high frequency
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 239000003989 dielectric material Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 22
- 239000004020 conductor Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000005513 bias potential Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
図1は、本発明の一実施の形態のプラズマ処理装置1の構成概略を模式的に示す縦断面図である。なお、説明上、X方向、Y方向、Z方向を用いる)。Z方向は、鉛直方向であり、円筒等の形状の中心軸方向である。X方向、Y方向は、Z方向に対し垂直な水平面、ウエハ等の面を構成する2つの方向であり、径方向に対応する。図1では、Z方向の一点鎖線の中心軸を中心とした断面を示す。
図2は、図1の実施の形態のプラズマ処理装置における、高周波電力に関する等価回路を示す説明図である。特に、図2の例では、図1の高周波電源111から供給されるバイアス形成用の第1高周波電力、および、高周波電源115から導体リング114に供給されるバイアス形成用の第2高周波電力について、それぞれの給電の経路に沿って等価な回路を模式的に示している。
Claims (4)
- 真空容器内の処理室内に配置された試料台の上面の上方に載せられた試料を、前記処理室内に形成したプラズマを用いて処理するプラズマ処理装置であって、
前記試料台内に配置された第1電極と、
前記試料台の前記第1電極の前記上面を含む上面部の外周側で前記上面部を囲むように配置されたリング状の第2電極と、
前記第2電極を覆って、前記第1電極の前記上面部を含む外周を囲むように配置された誘電体製のリング状部材と、
前記第1電極および前記第2電極の各々に高周波電源からの高周波電力を供給する複数の給電経路と、
前記複数の給電経路のうち前記高周波電源から前記第2電極への給電経路上であって前記高周波電源から前記第2電極に向かって順に配置された整合器およびインピーダンス調節回路と、
を備え、
前記インピーダンス調節回路と前記第2電極との間における前記給電経路上の第1箇所と接地箇所との間が、所定の値にされた抵抗素子のみを介して電気的に接続されている、
プラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記高周波電源は、前記第1電極に対して電気的に接続され第1周波数の第1高周波電力を供給するための第1高周波電源と、前記第2電極に対して電気的に接続され第2周波数の第2高周波電力を供給するための第2高周波電源と、を含み、
前記複数の給電経路は、前記第1電極に前記第1高周波電源から前記第1高周波電力を供給する第1給電経路と、前記第2電極に前記第2高周波電源から前記第2高周波電力を供給する第2給電経路と、を含み、
前記第2給電経路上の前記第1箇所と前記接地箇所との間に前記抵抗素子を備える、
プラズマ処理装置。 - 請求項2記載のプラズマ処理装置において、
前記第2高周波電力は、前記第1高周波電力よりも低い、
プラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記第1電極は、第1径を持つ前記上面部と、前記上面部の下側にあり前記第1径よりも大きい第2径を持つ下側部と、を含む凸型形状を有し、
前記リング状部材は、前記第2電極を覆って前記上面部の外周側に配置された第1部分と、前記下側部の外周側に配置された第2部分と、を有する、
プラズマ処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/020271 WO2019229784A1 (ja) | 2018-05-28 | 2018-05-28 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019229784A1 JPWO2019229784A1 (ja) | 2020-08-27 |
JP6785377B2 true JP6785377B2 (ja) | 2020-11-18 |
Family
ID=68697527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019527274A Active JP6785377B2 (ja) | 2018-05-28 | 2018-05-28 | プラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11424106B2 (ja) |
JP (1) | JP6785377B2 (ja) |
KR (1) | KR102207755B1 (ja) |
CN (1) | CN110770880B (ja) |
TW (1) | TWI723406B (ja) |
WO (1) | WO2019229784A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115004863A (zh) * | 2020-02-07 | 2022-09-02 | 株式会社日立高新技术 | 等离子体处理装置以及等离子体处理方法 |
JP7344821B2 (ja) * | 2020-03-17 | 2023-09-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62148570U (ja) * | 1986-03-11 | 1987-09-19 | ||
US5665167A (en) | 1993-02-16 | 1997-09-09 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus having a workpiece-side electrode grounding circuit |
JPH06244147A (ja) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4018935B2 (ja) * | 1996-03-01 | 2007-12-05 | 株式会社日立製作所 | プラズマ処理装置 |
JP4590031B2 (ja) * | 2000-07-26 | 2010-12-01 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
JP2002141340A (ja) * | 2000-08-25 | 2002-05-17 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
US7951262B2 (en) * | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
US7758764B2 (en) | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
KR101757922B1 (ko) * | 2009-10-27 | 2017-07-14 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
US8817449B2 (en) * | 2010-03-26 | 2014-08-26 | Ulvac, Inc. | Substrate holding device |
US9966236B2 (en) * | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
JP6244147B2 (ja) | 2013-09-18 | 2017-12-06 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
JP6574547B2 (ja) * | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6293499B2 (ja) * | 2014-01-27 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP2016031955A (ja) | 2014-07-28 | 2016-03-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2016046357A (ja) * | 2014-08-22 | 2016-04-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6539113B2 (ja) * | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR101757818B1 (ko) * | 2015-10-12 | 2017-07-26 | 세메스 주식회사 | 펄스화된 고주파 전력 모니터링 장치 및 그를 포함하는 기판 처리 장치 |
-
2018
- 2018-05-28 KR KR1020197013163A patent/KR102207755B1/ko active IP Right Grant
- 2018-05-28 US US16/463,531 patent/US11424106B2/en active Active
- 2018-05-28 JP JP2019527274A patent/JP6785377B2/ja active Active
- 2018-05-28 CN CN201880004600.1A patent/CN110770880B/zh active Active
- 2018-05-28 WO PCT/JP2018/020271 patent/WO2019229784A1/ja active Application Filing
-
2019
- 2019-05-27 TW TW108118213A patent/TWI723406B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20190137062A (ko) | 2019-12-10 |
TW202004831A (zh) | 2020-01-16 |
CN110770880A (zh) | 2020-02-07 |
US11424106B2 (en) | 2022-08-23 |
JPWO2019229784A1 (ja) | 2020-08-27 |
US20210111002A1 (en) | 2021-04-15 |
WO2019229784A1 (ja) | 2019-12-05 |
CN110770880B (zh) | 2023-12-29 |
TWI723406B (zh) | 2021-04-01 |
KR102207755B1 (ko) | 2021-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6034346A (en) | Method and apparatus for plasma processing apparatus | |
JP5808697B2 (ja) | ドライエッチング装置及びドライエッチング方法 | |
US6518705B2 (en) | Method and apparatus for producing uniform process rates | |
JP7364758B2 (ja) | プラズマ処理方法 | |
KR20060087474A (ko) | 플라즈마 공정 챔버에서 이용하기 위한 프로세스 키트 | |
JP2011175977A (ja) | 均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成 | |
JP2015162266A (ja) | プラズマ処理装置 | |
CN111183504B (zh) | 制造过程中的超局部和等离子体均匀性控制 | |
JP2016031955A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JP7001456B2 (ja) | プラズマ処理装置 | |
JP6785377B2 (ja) | プラズマ処理装置 | |
KR100806522B1 (ko) | 유도 결합 플라즈마 반응기 | |
CN112585726A (zh) | 等离子处理装置 | |
US6432730B2 (en) | Plasma processing method and apparatus | |
WO2023175690A1 (ja) | プラズマ処理装置 | |
JP2017120847A (ja) | プラズマ処理装置 | |
KR200426498Y1 (ko) | 플라즈마 공정 챔버에서 이용하기 위한 프로세스 키트 | |
JP2019220532A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2019160714A (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190520 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200512 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200710 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200911 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200929 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201026 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6785377 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |