ATE552923T1 - Plasmabehandlungsreaktor - Google Patents
PlasmabehandlungsreaktorInfo
- Publication number
- ATE552923T1 ATE552923T1 AT07751025T AT07751025T ATE552923T1 AT E552923 T1 ATE552923 T1 AT E552923T1 AT 07751025 T AT07751025 T AT 07751025T AT 07751025 T AT07751025 T AT 07751025T AT E552923 T1 ATE552923 T1 AT E552923T1
- Authority
- AT
- Austria
- Prior art keywords
- bottom electrode
- outer bottom
- electrode
- inner bottom
- assembly
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/355,458 US8012306B2 (en) | 2006-02-15 | 2006-02-15 | Plasma processing reactor with multiple capacitive and inductive power sources |
PCT/US2007/004235 WO2007095388A2 (en) | 2006-02-15 | 2007-02-15 | Plasma processing reactor with multiple capacitive and inductive power sources |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE552923T1 true ATE552923T1 (de) | 2012-04-15 |
Family
ID=38367027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07751025T ATE552923T1 (de) | 2006-02-15 | 2007-02-15 | Plasmabehandlungsreaktor |
Country Status (10)
Country | Link |
---|---|
US (3) | US8012306B2 (de) |
EP (1) | EP1993745B1 (de) |
JP (3) | JP5336199B2 (de) |
KR (2) | KR101391006B1 (de) |
CN (1) | CN101557885B (de) |
AT (1) | ATE552923T1 (de) |
MY (1) | MY151896A (de) |
SG (1) | SG169982A1 (de) |
TW (1) | TWI354309B (de) |
WO (1) | WO2007095388A2 (de) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070068623A1 (en) * | 2005-09-27 | 2007-03-29 | Yunsang Kim | Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor |
US7909960B2 (en) * | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
US20070245960A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density |
US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
US8398778B2 (en) | 2007-01-26 | 2013-03-19 | Lam Research Corporation | Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter |
EP2053631A1 (de) * | 2007-10-22 | 2009-04-29 | Industrial Plasma Services & Technologies - IPST GmbH | Verfahren und Vorrichtung zur Plasma-Behandlung Substrate im Durchlauf |
US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
US8299391B2 (en) * | 2008-07-30 | 2012-10-30 | Applied Materials, Inc. | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
US8382941B2 (en) * | 2008-09-15 | 2013-02-26 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
US20100098875A1 (en) * | 2008-10-17 | 2010-04-22 | Andreas Fischer | Pre-coating and wafer-less auto-cleaning system and method |
US8317450B2 (en) * | 2008-10-30 | 2012-11-27 | Lam Research Corporation | Tactile wafer lifter and methods for operating the same |
JP5391659B2 (ja) * | 2008-11-18 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
JP5657262B2 (ja) | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US9117767B2 (en) * | 2011-07-21 | 2015-08-25 | Lam Research Corporation | Negative ion control for dielectric etch |
US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
JP5730521B2 (ja) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
US20120088371A1 (en) * | 2010-10-07 | 2012-04-12 | Applied Materials, Inc. | Methods for etching substrates using pulsed dc voltage |
US20130098390A1 (en) * | 2011-10-25 | 2013-04-25 | Infineon Technologies Ag | Device for processing a carrier and a method for processing a carrier |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
WO2013078098A1 (en) * | 2011-11-23 | 2013-05-30 | Lam Research Corporation | Multi zone gas injection upper electrode system |
US20130220975A1 (en) * | 2012-02-27 | 2013-08-29 | Rajinder Dhindsa | Hybrid plasma processing systems |
US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
JP6377060B2 (ja) | 2012-08-28 | 2018-08-22 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル |
US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
CN104217914B (zh) * | 2013-05-31 | 2016-12-28 | 中微半导体设备(上海)有限公司 | 等离子体处理装置 |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN103752562A (zh) * | 2014-02-13 | 2014-04-30 | 苏州众显电子科技有限公司 | 一种利用等离子清洗机洗液晶显示屏基板工艺 |
CN205741208U (zh) * | 2015-09-16 | 2016-11-30 | 应用材料公司 | 用于改进的等离子体处理腔室的系统和设备 |
CN106548914B (zh) * | 2015-09-17 | 2018-10-30 | 中微半导体设备(上海)有限公司 | 一种等离子体处理设备及其清洗系统和方法 |
CN106920726B (zh) * | 2015-12-24 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及其清洗方法 |
CN109478489B (zh) * | 2016-07-14 | 2021-08-10 | 东京毅力科创株式会社 | 用于多区域电极阵列中的rf功率分配的方法 |
CN108269728A (zh) * | 2016-12-30 | 2018-07-10 | 中微半导体设备(上海)有限公司 | 电容耦合等离子体处理装置与等离子体处理方法 |
CN107610999B (zh) * | 2017-08-28 | 2024-08-23 | 北京北方华创微电子装备有限公司 | 下电极机构及反应腔室 |
TWI744566B (zh) | 2017-11-17 | 2021-11-01 | 新加坡商Aes全球公司 | 用於在空間域和時間域上控制基板上的電漿處理之系統和方法,及相關的電腦可讀取媒體 |
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WO2019099937A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Improved application of modulating supplies in a plasma processing system |
TWI697261B (zh) * | 2018-05-22 | 2020-06-21 | 呈睿國際股份有限公司 | 感應耦合電漿蝕刻系統及其切換式匹配裝置 |
US11094508B2 (en) * | 2018-12-14 | 2021-08-17 | Applied Materials, Inc. | Film stress control for plasma enhanced chemical vapor deposition |
US10588212B1 (en) * | 2019-05-22 | 2020-03-10 | Georges J. Gorin | Plasma initiation in an inductive RF coupling mode |
CN112103163B (zh) * | 2019-06-17 | 2022-06-17 | 北京北方华创微电子装备有限公司 | 下电极装置及相关等离子体系统 |
KR20220031713A (ko) | 2019-07-12 | 2022-03-11 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 단일 제어식 스위치를 갖는 바이어스 공급부 |
US20220319821A1 (en) | 2019-09-06 | 2022-10-06 | Lam Research Corporation | Sorption chamber walls for semiconductor equipment |
CN110867406A (zh) * | 2019-11-27 | 2020-03-06 | 北京北方华创微电子装备有限公司 | 静电卡盘及半导体加工设备 |
US20210319989A1 (en) * | 2020-04-13 | 2021-10-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
CN114496693A (zh) * | 2020-11-11 | 2022-05-13 | 中微半导体设备(上海)股份有限公司 | 多区加热装置、下电极组件、等离子处理装置及调温方法 |
US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
US20230317411A1 (en) * | 2022-03-13 | 2023-10-05 | Applied Materials, Inc. | Radio frequency source for inductively coupled and capacitively coupled plasmas in substrate processing chambers |
US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4793975A (en) | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
DE3678612D1 (de) | 1985-05-20 | 1991-05-16 | Tegal Corp | Plasmareaktor mit entnehmbarem einsatz. |
JP2554896B2 (ja) | 1987-10-01 | 1996-11-20 | セイコーエプソン株式会社 | プラズマcvd装置 |
JPH0364460A (ja) | 1989-07-31 | 1991-03-19 | Hitachi Ltd | 薄膜形成装置 |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
KR100276736B1 (ko) * | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | 플라즈마 처리장치 |
EP0680072B1 (de) * | 1994-04-28 | 2003-10-08 | Applied Materials, Inc. | Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung |
US6391147B2 (en) * | 1994-04-28 | 2002-05-21 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
US5523261A (en) * | 1995-02-28 | 1996-06-04 | Micron Technology, Inc. | Method of cleaning high density inductively coupled plasma chamber using capacitive coupling |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US6902683B1 (en) | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
JP4084335B2 (ja) * | 1996-03-01 | 2008-04-30 | 株式会社日立製作所 | プラズマエッチング処理装置 |
JPH09260098A (ja) * | 1996-03-19 | 1997-10-03 | Fujitsu Ltd | プラズマ処理装置 |
US5788799A (en) * | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
JP2929275B2 (ja) * | 1996-10-16 | 1999-08-03 | 株式会社アドテック | 透磁コアを有する誘導結合型−平面状プラズマの発生装置 |
US5983906A (en) * | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US5824607A (en) * | 1997-02-06 | 1998-10-20 | Applied Materials, Inc. | Plasma confinement for an inductively coupled plasma reactor |
JPH10242134A (ja) | 1997-02-28 | 1998-09-11 | Sharp Corp | プラズマcvd装置 |
JPH10251849A (ja) * | 1997-03-07 | 1998-09-22 | Tadahiro Omi | スパッタリング装置 |
JPH10326772A (ja) * | 1997-05-26 | 1998-12-08 | Ricoh Co Ltd | ドライエッチング装置 |
JP3676919B2 (ja) * | 1997-10-09 | 2005-07-27 | 株式会社アルバック | 反応性イオンエッチング装置 |
JP2000021598A (ja) * | 1998-07-02 | 2000-01-21 | Sony Corp | プラズマ処理装置 |
JP4066214B2 (ja) * | 1998-07-24 | 2008-03-26 | 財団法人国際科学振興財団 | プラズマプロセス装置 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6367413B1 (en) * | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
US6232236B1 (en) * | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
US6518190B1 (en) * | 1999-12-23 | 2003-02-11 | Applied Materials Inc. | Plasma reactor with dry clean apparatus and method |
US6447636B1 (en) * | 2000-02-16 | 2002-09-10 | Applied Materials, Inc. | Plasma reactor with dynamic RF inductive and capacitive coupling control |
JP3586197B2 (ja) * | 2000-03-23 | 2004-11-10 | シャープ株式会社 | 薄膜形成用プラズマ成膜装置 |
US6872281B1 (en) * | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
JP2003155569A (ja) * | 2001-11-16 | 2003-05-30 | Nec Kagoshima Ltd | プラズマcvd装置及びそのクリーニング方法 |
US6744212B2 (en) | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
KR100442194B1 (ko) * | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | 웨이퍼 건식 식각용 전극 |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP2004349171A (ja) | 2003-05-23 | 2004-12-09 | Cataler Corp | 固体高分子型燃料電池用触媒層 |
KR20050004995A (ko) * | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | 플라즈마를 이용하는 기판 가공 장치 |
JP4413084B2 (ja) * | 2003-07-30 | 2010-02-10 | シャープ株式会社 | プラズマプロセス装置及びそのクリーニング方法 |
US7144521B2 (en) | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
JP4456412B2 (ja) * | 2004-05-27 | 2010-04-28 | 株式会社日立製作所 | プラズマ処理装置 |
JP4773079B2 (ja) * | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
US20060278339A1 (en) | 2005-06-13 | 2006-12-14 | Lam Research Corporation, A Delaware Corporation | Etch rate uniformity using the independent movement of electrode pieces |
US7683289B2 (en) | 2005-12-16 | 2010-03-23 | Lam Research Corporation | Apparatus and method for controlling plasma density profile |
US8911590B2 (en) | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
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2006
- 2006-02-15 US US11/355,458 patent/US8012306B2/en active Active
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2007
- 2007-02-15 WO PCT/US2007/004235 patent/WO2007095388A2/en active Application Filing
- 2007-02-15 JP JP2008555398A patent/JP5336199B2/ja active Active
- 2007-02-15 AT AT07751025T patent/ATE552923T1/de active
- 2007-02-15 SG SG201101058-4A patent/SG169982A1/en unknown
- 2007-02-15 CN CN200780005750.6A patent/CN101557885B/zh active Active
- 2007-02-15 KR KR1020087020075A patent/KR101391006B1/ko active IP Right Grant
- 2007-02-15 TW TW096105721A patent/TWI354309B/zh active
- 2007-02-15 EP EP07751025A patent/EP1993745B1/de active Active
- 2007-02-15 MY MYPI20083099 patent/MY151896A/en unknown
- 2007-02-15 KR KR1020137025015A patent/KR101455954B1/ko active IP Right Grant
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2011
- 2011-07-26 US US13/191,402 patent/US8337623B2/en active Active
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2012
- 2012-06-21 JP JP2012139706A patent/JP5470421B2/ja active Active
- 2012-07-03 US US13/541,629 patent/US8906197B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
JP2013080956A (ja) | 2013-05-02 |
KR20080094794A (ko) | 2008-10-24 |
JP5518174B2 (ja) | 2014-06-11 |
TW200811905A (en) | 2008-03-01 |
CN101557885A (zh) | 2009-10-14 |
KR101391006B1 (ko) | 2014-04-30 |
WO2007095388A2 (en) | 2007-08-23 |
JP2009527128A (ja) | 2009-07-23 |
CN101557885B (zh) | 2015-03-11 |
EP1993745B1 (de) | 2012-04-11 |
US8337623B2 (en) | 2012-12-25 |
US8906197B2 (en) | 2014-12-09 |
JP5470421B2 (ja) | 2014-04-16 |
WO2007095388A3 (en) | 2007-12-13 |
US20120279659A1 (en) | 2012-11-08 |
US8012306B2 (en) | 2011-09-06 |
TWI354309B (en) | 2011-12-11 |
KR20130124394A (ko) | 2013-11-13 |
SG169982A1 (en) | 2011-04-29 |
EP1993745A4 (de) | 2010-03-17 |
US20070186855A1 (en) | 2007-08-16 |
JP5336199B2 (ja) | 2013-11-06 |
KR101455954B1 (ko) | 2014-10-31 |
US20110277784A1 (en) | 2011-11-17 |
MY151896A (en) | 2014-07-14 |
JP2012212916A (ja) | 2012-11-01 |
EP1993745A2 (de) | 2008-11-26 |
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