JP5470421B2 - プラズマ処理チャンバ - Google Patents
プラズマ処理チャンバ Download PDFInfo
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- JP5470421B2 JP5470421B2 JP2012139706A JP2012139706A JP5470421B2 JP 5470421 B2 JP5470421 B2 JP 5470421B2 JP 2012139706 A JP2012139706 A JP 2012139706A JP 2012139706 A JP2012139706 A JP 2012139706A JP 5470421 B2 JP5470421 B2 JP 5470421B2
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- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000004140 cleaning Methods 0.000 claims abstract description 51
- 239000003989 dielectric material Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 43
- 230000006698 induction Effects 0.000 claims description 38
- 238000007667 floating Methods 0.000 claims description 6
- 230000003750 conditioning effect Effects 0.000 claims 2
- 229910000859 α-Fe Inorganic materials 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 abstract description 15
- 239000007789 gas Substances 0.000 description 28
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (18)
- プラズマ処理チャンバであって、
(a)下部電極アセンブリであって、
(i)基板を支持すると共に、基板エッチングの中央領域を規定するための内側下部電極と、
(ii)前記内側下部電極の外側に配置され、チャンバ洗浄の領域を規定する外側下部電極であって、導電リングおよび前記導電リングの下に配置されている誘導コイルを備えている外側下部電極と、
(iii)前記内側下部電極と前記外側下部電極との間に配置され、前記内側下部電極を前記外側下部電極から隔離する誘電材料と、
(iv)RF電源を前記内側下部電極または前記外側下部電極のいずれかに接続するスイッチと、
によって規定される下部電極アセンブリと、
(b)前記内側および外側下部電極の両方の上方に配置されている上部電極を備える上部電極アセンブリと、
を備える、プラズマ処理チャンバ。 - 請求項1に記載のプラズマ処理チャンバにおいて、前記外側下部電極は誘導電極である、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバにおいて、前記誘導コイルはさらにファラデーシールドの下に配置される、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバはさらに、
前記上部電極アセンブリと前記下部電極アセンブリとを囲み、前記プラズマ処理チャンバ内において前記下部電極と平行に吊り下げられている複数の閉じ込めリングを備える、プラズマ処理チャンバ。 - 請求項1に記載のプラズマ処理チャンバにおいて、エッチング中に、前記スイッチは前記内側下部電極に対する前記RF電源からのRF電力を制御し、前記外側下部電極は接地またはRF調整ブロックキットに接続される、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバにおいて、前記RF電源は約400kHzから約60MHzの範囲の周波数を供給する、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバにおいて、前記内側下部電極と外側下部電極はRF整合器に接続されている、プラズマ処理チャンバ。
- 請求項5に記載のプラズマ処理チャンバにおいて、前記RF調整ブロックキットは、前記内側下部電極に対する前記RF電力の特定の周波数を選択的に接地することを可能にする、プラズマ処理チャンバ。
- 請求項8に記載のプラズマ処理チャンバにおいて、前記RF電力は、前記内側下部電極に供給される2MHz、27MHz、および60MHzのRF周波数を含み、前記RF調整ブロックキットによる前記選択的な接地により1または2の特定の周波数の接地を可能にすることで、エッチング処理の均一性を調整する、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバにおいて、第1のRF電源が前記内側下部電極に接続されており、約400kHzから約60MHzの範囲の単一周波数または多重周波数を有するRF電力を供給することによって、前記上部電極と共に第1のプラズマを生成する、プラズマ処理チャンバ。
- 請求項1に記載のプラズマ処理チャンバにおいて、第2のRF電源が前記スイッチを介して前記誘導コイルに接続されており、前記第2のRF電源はチャンバ洗浄の領域内で洗浄中に稼動し、前記内側下部電極は前記チャンバ洗浄中に浮遊している、プラズマ処理チャンバ。
- プラズマ処理チャンバであって、
(a)下部電極アセンブリであって、
(i)基板を支持し、基板エッチングの中央領域を規定し、第1のRF電源と接続している内側下部電極と、
(ii)前記内側下部電極の外側に配置され、チャンバ洗浄の領域を規定し、接地に接続されている導電リングを備える外側下部電極と、
(iii)前記内側下部電極と前記外側下部電極との間に配置され、前記内側下部電極を前記外側下部電極から隔離する誘電材料と、
によって規定される下部電極アセンブリと、
(b)前記内側下部電極の上方に配置されている第1の上部電極と、前記第1の上部電極を囲み、前記下部電極アセンブリの前記外側下部電極の上方に配置されている第2の上部電極とを有する上部電極アセンブリと、を備え、
前記第2の上部電極は、
(i)誘電材料内に埋め込まれている誘導コイルと、
(ii)前記誘電材料の下方に配置されているフェラデーシールドと、
(iii)前記フェラデーシールドの下方に配置され、チャンバ洗浄の領域に対向するよう構成されている誘電リングと、
によって規定される、プラズマ処理チャンバ。 - 請求項12に記載のプラズマ処理チャンバはさらに、前記フェラデーシールドと電気的に接触し、前記内側下部電極に印加される時に前記第1のRF電源に接地路を提供する導電ブロックを備える、プラズマ処理チャンバ。
- 請求項12に記載のプラズマ処理チャンバにおいて、前記第1のRF電源は前記第1の上部電極と前記内側下部電極との間に容量結合プラズマを生成するための電力を供給する、プラズマ処理チャンバ。
- 請求項12に記載のプラズマ処理チャンバはさらに、前記誘導コイルと接続している第2のRF電源を備える、プラズマ処理チャンバ。
- 請求項15に記載のプラズマ処理チャンバにおいて、前記第2のRF電源はチャンバ洗浄の領域内で洗浄プラズマを生成するための電力を供給する、プラズマ処理チャンバ。
- 請求項12に記載のプラズマ処理チャンバにおいて、前記第1のRF電源は400kHzから60MHzの範囲の周波数の単一RF電力または多重RF電力のいずれかを供給する、プラズマ処理チャンバ。
- 請求項12に記載のプラズマ処理チャンバにおいて、前記プラズマ処理チャンバ内の前記上部電極アセンブリと前記下部電極アセンブリを囲む複数の閉じ込めリングを備える、プラズマ処理チャンバ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/355,458 US8012306B2 (en) | 2006-02-15 | 2006-02-15 | Plasma processing reactor with multiple capacitive and inductive power sources |
US11/355,458 | 2006-02-15 |
Related Parent Applications (1)
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JP2008555398A Division JP5336199B2 (ja) | 2006-02-15 | 2007-02-15 | 複数の容量および誘導プラズマ源を備えたプラズマ処理リアクタ |
Publications (2)
Publication Number | Publication Date |
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JP2012212916A JP2012212916A (ja) | 2012-11-01 |
JP5470421B2 true JP5470421B2 (ja) | 2014-04-16 |
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Family Applications (3)
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JP2008555398A Active JP5336199B2 (ja) | 2006-02-15 | 2007-02-15 | 複数の容量および誘導プラズマ源を備えたプラズマ処理リアクタ |
JP2012139706A Active JP5470421B2 (ja) | 2006-02-15 | 2012-06-21 | プラズマ処理チャンバ |
JP2012285812A Active JP5518174B2 (ja) | 2006-02-15 | 2012-12-27 | プラズマを生成する方法又はプラズマチャンバの操作方法 |
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Country Status (10)
Country | Link |
---|---|
US (3) | US8012306B2 (ja) |
EP (1) | EP1993745B1 (ja) |
JP (3) | JP5336199B2 (ja) |
KR (2) | KR101391006B1 (ja) |
CN (1) | CN101557885B (ja) |
AT (1) | ATE552923T1 (ja) |
MY (1) | MY151896A (ja) |
SG (1) | SG169982A1 (ja) |
TW (1) | TWI354309B (ja) |
WO (1) | WO2007095388A2 (ja) |
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ATE552923T1 (de) | 2012-04-15 |
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US8337623B2 (en) | 2012-12-25 |
JP2009527128A (ja) | 2009-07-23 |
JP2013080956A (ja) | 2013-05-02 |
WO2007095388A3 (en) | 2007-12-13 |
JP2012212916A (ja) | 2012-11-01 |
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TW200811905A (en) | 2008-03-01 |
TWI354309B (en) | 2011-12-11 |
KR20080094794A (ko) | 2008-10-24 |
CN101557885B (zh) | 2015-03-11 |
EP1993745A4 (en) | 2010-03-17 |
US20070186855A1 (en) | 2007-08-16 |
SG169982A1 (en) | 2011-04-29 |
MY151896A (en) | 2014-07-14 |
CN101557885A (zh) | 2009-10-14 |
US8906197B2 (en) | 2014-12-09 |
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US20110277784A1 (en) | 2011-11-17 |
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