DE69327069T2 - Vorrichtung und Verfahren zur Plasmaerzeugung - Google Patents

Vorrichtung und Verfahren zur Plasmaerzeugung

Info

Publication number
DE69327069T2
DE69327069T2 DE69327069T DE69327069T DE69327069T2 DE 69327069 T2 DE69327069 T2 DE 69327069T2 DE 69327069 T DE69327069 T DE 69327069T DE 69327069 T DE69327069 T DE 69327069T DE 69327069 T2 DE69327069 T2 DE 69327069T2
Authority
DE
Germany
Prior art keywords
generating plasma
plasma
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69327069T
Other languages
English (en)
Other versions
DE69327069D1 (de
Inventor
Satoshi Nakagawa
Yoshifumi Tahara
Masahiro Ogasawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Matsushita Electric Industrial Co Ltd filed Critical Tokyo Electron Ltd
Publication of DE69327069D1 publication Critical patent/DE69327069D1/de
Application granted granted Critical
Publication of DE69327069T2 publication Critical patent/DE69327069T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
DE69327069T 1992-04-17 1993-04-16 Vorrichtung und Verfahren zur Plasmaerzeugung Expired - Lifetime DE69327069T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9805692 1992-04-17

Publications (2)

Publication Number Publication Date
DE69327069D1 DE69327069D1 (de) 1999-12-30
DE69327069T2 true DE69327069T2 (de) 2000-04-06

Family

ID=14209632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327069T Expired - Lifetime DE69327069T2 (de) 1992-04-17 1993-04-16 Vorrichtung und Verfahren zur Plasmaerzeugung

Country Status (4)

Country Link
US (1) US5449977A (de)
EP (1) EP0566143B1 (de)
KR (1) KR0127663B1 (de)
DE (1) DE69327069T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674321A (en) * 1995-04-28 1997-10-07 Applied Materials, Inc. Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
SE511139C2 (sv) * 1997-11-20 1999-08-09 Hana Barankova Plasmabearbetningsapparat med vridbara magneter
US6355183B1 (en) * 1998-09-04 2002-03-12 Matsushita Electric Industrial Co., Ltd. Apparatus and method for plasma etching
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
CA2359597C (en) * 2001-10-23 2003-10-21 Roland Kenny Beverage can holder
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US20030230385A1 (en) * 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US7059268B2 (en) * 2002-12-20 2006-06-13 Tokyo Electron Limited Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US20050181052A1 (en) * 2004-02-17 2005-08-18 Patel Satishkumar A. Lansoprazole microtablets
US8253057B1 (en) 2004-09-03 2012-08-28 Jack Hunt System and method for plasma generation
JP5367522B2 (ja) * 2009-09-24 2013-12-11 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
US8773020B2 (en) 2010-10-22 2014-07-08 Applied Materials, Inc. Apparatus for forming a magnetic field and methods of use thereof
US9269546B2 (en) 2010-10-22 2016-02-23 Applied Materials, Inc. Plasma reactor with electron beam plasma source having a uniform magnetic field
CN108575042B (zh) * 2017-03-09 2021-04-09 北京北方华创微电子装备有限公司 一种线圈、介质筒和等离子体腔室

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4657619A (en) * 1985-11-29 1987-04-14 Donnell Kevin P O Diverter magnet arrangement for plasma processing system
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
US5032202A (en) * 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5081398A (en) * 1989-10-20 1992-01-14 Board Of Trustees Operating Michigan State University Resonant radio frequency wave coupler apparatus using higher modes
US5079481A (en) * 1990-08-02 1992-01-07 Texas Instruments Incorporated Plasma-assisted processing magneton with magnetic field adjustment
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method

Also Published As

Publication number Publication date
KR0127663B1 (ko) 1998-04-01
DE69327069D1 (de) 1999-12-30
US5449977A (en) 1995-09-12
KR930022492A (ko) 1993-11-24
EP0566143A1 (de) 1993-10-20
EP0566143B1 (de) 1999-11-24

Similar Documents

Publication Publication Date Title
DE69327069T2 (de) Vorrichtung und Verfahren zur Plasmaerzeugung
DE69719925T2 (de) Vorrichtung und Verfahren zur Plasmabrennerserzeugung
DE69213311D1 (de) Verfahren und Vorrichtung zur Versorgung mit Gas
DE69332739T2 (de) Verfahren und vorrichtung zur präparativen elektroforese
DE69313597T2 (de) Verfahren und Vorrichtung zur Megaschallreinigung
DE69630589D1 (de) Verfahren und vorrichtung zur plasmaerzeugung
DE69321569T2 (de) Verfahren und Vorrichtung zur Zeicheneingabe
DE69536088D1 (de) Verfahren und Vorrichtung zur Strahlungserzeugung
DE69603577T2 (de) Verfahren und vorrichtung zur verabreichung von analgetika
DE69332459D1 (de) Verfahren und Vorrichtung zur Zeichenerkennung
DE69425037D1 (de) Verfahren und Vorrichtung zur Generierung von Schriftzeichen
DE69528743D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE59302428D1 (de) Verfahren und vorrichtung zur emissionsarmen spritzapplikation
DE69434014D1 (de) Vorrichtung und verfahren zur bilderzeugung
DE69428918D1 (de) Vorrichtung und verfahren zur gitarrenrückkopplung
DE69422845T2 (de) Vorrichtung und Verfahren zur Koordinateneingabe
DE69622420D1 (de) Verfahren und vorrichtung zur reduzierung unerwünschter rückkopplung
DE69324417T2 (de) Vorrichtung und Verfahren zur Koordinateneingabe und Oszillationsgenerator
DE69413891D1 (de) Verfahren und vorrichtung zur intermittierenden beschichtung
DE69425332D1 (de) Verfahren und Vorrichtung zur Plasmamassenspektrometrie
DE69313963T2 (de) Verfahren und vorrichtung zur zuführung von teilen
DE69327684T2 (de) Verfahren und Vorrichtung zur Schriftzeichenmustererzeugung
DE69313211D1 (de) Verfahren und Vorrichtung zur Coronabehandlung
DE69231293T2 (de) Verfahren und vorrichtung zur plasmabeschichtung
DE69230322T2 (de) Verfahren und Vorrichtung zur Plasmabehandlung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP