KR100635693B1 - 플라즈마 처리 챔버 포커스 링 - Google Patents

플라즈마 처리 챔버 포커스 링 Download PDF

Info

Publication number
KR100635693B1
KR100635693B1 KR1020007006568A KR20007006568A KR100635693B1 KR 100635693 B1 KR100635693 B1 KR 100635693B1 KR 1020007006568 A KR1020007006568 A KR 1020007006568A KR 20007006568 A KR20007006568 A KR 20007006568A KR 100635693 B1 KR100635693 B1 KR 100635693B1
Authority
KR
South Korea
Prior art keywords
focus ring
chuck
plasma
plasma processing
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020007006568A
Other languages
English (en)
Korean (ko)
Other versions
KR20010033185A (ko
Inventor
라진더 딘사
켄 토쿠나가
비크람 싱
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR20010033185A publication Critical patent/KR20010033185A/ko
Application granted granted Critical
Publication of KR100635693B1 publication Critical patent/KR100635693B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Special Wing (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Glass Compositions (AREA)
  • Adornments (AREA)
KR1020007006568A 1997-12-19 1998-12-11 플라즈마 처리 챔버 포커스 링 Expired - Lifetime KR100635693B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/993,791 1997-12-19
US08/993,791 1997-12-19
US08/993,791 US6039836A (en) 1997-12-19 1997-12-19 Focus rings
PCT/US1998/026412 WO1999033087A1 (en) 1997-12-19 1998-12-11 Focus rings and methods therefor

Publications (2)

Publication Number Publication Date
KR20010033185A KR20010033185A (ko) 2001-04-25
KR100635693B1 true KR100635693B1 (ko) 2006-10-17

Family

ID=25539940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007006568A Expired - Lifetime KR100635693B1 (ko) 1997-12-19 1998-12-11 플라즈마 처리 챔버 포커스 링

Country Status (8)

Country Link
US (1) US6039836A (https=)
EP (1) EP1042783B1 (https=)
JP (1) JP4548560B2 (https=)
KR (1) KR100635693B1 (https=)
AT (1) ATE273562T1 (https=)
DE (1) DE69825630T2 (https=)
IL (1) IL136874A (https=)
WO (1) WO1999033087A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281342A (zh) * 2017-01-05 2018-07-13 东京毅力科创株式会社 等离子体处理装置

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6489249B1 (en) * 2000-06-20 2002-12-03 Infineon Technologies Ag Elimination/reduction of black silicon in DT etch
JP3764639B2 (ja) * 2000-09-13 2006-04-12 株式会社日立製作所 プラズマ処理装置および半導体装置の製造方法
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
JP3393118B2 (ja) * 2000-12-21 2003-04-07 株式会社半導体先端テクノロジーズ プラズマエッチング装置および半導体装置の製造方法
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Necエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
DE10147998A1 (de) * 2001-09-28 2003-04-10 Unaxis Balzers Ag Verfahren und Vorrichtung zur Erzeugung eines Plasmas
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US6944006B2 (en) * 2003-04-03 2005-09-13 Applied Materials, Inc. Guard for electrostatic chuck
DE10319894A1 (de) * 2003-04-28 2004-11-25 Infineon Technologies Ag Dielektrischer Fokusring
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US20050279457A1 (en) * 2004-06-04 2005-12-22 Tokyo Electron Limited Plasma processing apparatus and method, and plasma control unit
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
KR100694796B1 (ko) * 2005-09-26 2007-03-14 세메스 주식회사 평면표시패널 처리챔버의 기액 분리장치
US7520969B2 (en) * 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
KR100809957B1 (ko) * 2006-09-20 2008-03-07 삼성전자주식회사 반도체 식각장치
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US7943007B2 (en) 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher
JP4659771B2 (ja) * 2007-02-13 2011-03-30 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8343305B2 (en) * 2007-09-04 2013-01-01 Lam Research Corporation Method and apparatus for diagnosing status of parts in real time in plasma processing equipment
US8900405B2 (en) * 2007-11-14 2014-12-02 Applied Materials, Inc. Plasma immersion ion implantation reactor with extended cathode process ring
US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
US8402918B2 (en) * 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8419959B2 (en) * 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
KR200464037Y1 (ko) * 2009-10-13 2012-12-07 램 리써치 코포레이션 샤워헤드 전극 어셈블리의 에지-클램핑되고 기계적으로 패스닝된 내부 전극
JP5808750B2 (ja) * 2009-11-30 2015-11-10 ラム リサーチ コーポレーションLam Research Corporation 傾斜側壁を備える静電チャック
DE202010015933U1 (de) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
JP6069654B2 (ja) * 2013-03-29 2017-02-01 Sppテクノロジーズ株式会社 被処理基板のプラズマ処理用載置台及びこれを用いたプラズマ処理装置
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
SG11201703114QA (en) 2014-10-17 2017-06-29 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
CN105990085B (zh) * 2015-03-03 2018-03-30 中微半导体设备(上海)有限公司 等离子体刻蚀设备、聚焦环及其制作方法
US10017857B2 (en) 2015-05-02 2018-07-10 Applied Materials, Inc. Method and apparatus for controlling plasma near the edge of a substrate
US10163610B2 (en) * 2015-07-13 2018-12-25 Lam Research Corporation Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101722382B1 (ko) * 2016-01-08 2017-04-03 주식회사 윈텔 플라즈마 처리 장치
US10109464B2 (en) 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
USD797691S1 (en) 2016-04-14 2017-09-19 Applied Materials, Inc. Composite edge ring
US11702748B2 (en) * 2017-03-03 2023-07-18 Lam Research Corporation Wafer level uniformity control in remote plasma film deposition
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
KR102063108B1 (ko) * 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
SG11202010375QA (en) 2018-04-20 2020-11-27 Lam Res Corp Edge exclusion control
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
KR102111504B1 (ko) * 2018-10-15 2020-05-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10784089B2 (en) 2019-02-01 2020-09-22 Applied Materials, Inc. Temperature and bias control of edge ring
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
JP7760511B2 (ja) 2020-02-11 2025-10-27 ラム リサーチ コーポレーション ウエハベベル/エッジ上の堆積を制御するためのキャリアリング設計
JP2021180283A (ja) * 2020-05-15 2021-11-18 東京エレクトロン株式会社 載置台アセンブリ、基板処理装置および基板処理方法
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法
CN115249606B (zh) * 2021-04-28 2025-02-14 中微半导体设备(上海)股份有限公司 等离子体处理装置、下电极组件及其形成方法
CN120565385A (zh) * 2021-09-08 2025-08-29 北京屹唐半导体科技股份有限公司 用于清洁等离子体加工设备的聚焦环的导电构件
USD1121576S1 (en) 2022-07-14 2026-04-07 Applied Materials Inc. Purge ring for a substrate processing chamber
US20240018648A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Purge Ring for Reduced Substrate Backside Deposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
JP2675613B2 (ja) * 1989-04-11 1997-11-12 東京エレクトロン株式会社 プラズマ処理装置
KR100297358B1 (ko) * 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
JP3424903B2 (ja) * 1997-01-23 2003-07-07 東京エレクトロン株式会社 プラズマ処理装置
US5985033A (en) * 1997-07-11 1999-11-16 Applied Materials, Inc. Apparatus and method for delivering a gas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281342A (zh) * 2017-01-05 2018-07-13 东京毅力科创株式会社 等离子体处理装置
CN108281342B (zh) * 2017-01-05 2020-01-21 东京毅力科创株式会社 等离子体处理装置

Also Published As

Publication number Publication date
IL136874A (en) 2003-07-31
EP1042783B1 (en) 2004-08-11
WO1999033087A1 (en) 1999-07-01
JP4548560B2 (ja) 2010-09-22
KR20010033185A (ko) 2001-04-25
ATE273562T1 (de) 2004-08-15
IL136874A0 (en) 2001-06-14
JP2001527285A (ja) 2001-12-25
DE69825630D1 (de) 2004-09-16
DE69825630T2 (de) 2005-09-15
US6039836A (en) 2000-03-21
EP1042783A1 (en) 2000-10-11

Similar Documents

Publication Publication Date Title
KR100635693B1 (ko) 플라즈마 처리 챔버 포커스 링
US6344105B1 (en) Techniques for improving etch rate uniformity
JP3737514B2 (ja) 誘導性プラズマリアクター
US6686558B2 (en) Atmospheric pressure inductive plasma apparatus
JP3653524B2 (ja) プラズマ発生方法、および誘導結合されたプラズマ発生源を含むプラズマ発生装置
US6083363A (en) Apparatus and method for uniform, low-damage anisotropic plasma processing
US7572737B1 (en) Apparatus and methods for adjusting an edge ring potential substrate processing
US20110011534A1 (en) Apparatus for adjusting an edge ring potential during substrate processing
KR100535961B1 (ko) 플라즈마에 의해 유도되는 차징 결함을 감소시키는 방법
CN101557885A (zh) 具有多个电容性和电感性电源的等离子处理反应器
KR20030074602A (ko) 플라즈마를 한정시키기 위한 챔버 구조
US6013984A (en) Ion energy attenuation method by determining the required number of ion collisions
US20040112544A1 (en) Magnetic mirror for preventing wafer edge damage during dry etching
KR100455350B1 (ko) 유도 결합형 플라즈마 발생 장치 및 방법
US5783100A (en) Method of high density plasma etching for semiconductor manufacture
Pu Plasma etch equipment
US7109122B2 (en) Method and apparatus for reducing substrate charging damage
JPH1140398A (ja) プラズマ生成装置
JPH0794480A (ja) プラズマ処理方法及びプラズマ処理装置
KR20060002201A (ko) 플라즈마 처리장치
JPH11241189A (ja) 誘導結合放電エッチング装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20000616

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20031208

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20050831

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060424

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060731

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20061011

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20061010

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20091013

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100930

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110928

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20120925

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20120925

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130927

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130927

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140924

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140924

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150924

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150924

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160927

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160927

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170928

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170928

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180928

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180928

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20190611

Termination category: Expiration of duration