JP4508619B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP4508619B2
JP4508619B2 JP2003404544A JP2003404544A JP4508619B2 JP 4508619 B2 JP4508619 B2 JP 4508619B2 JP 2003404544 A JP2003404544 A JP 2003404544A JP 2003404544 A JP2003404544 A JP 2003404544A JP 4508619 B2 JP4508619 B2 JP 4508619B2
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JP
Japan
Prior art keywords
pattern
light
patterns
receiving region
light receiving
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Expired - Fee Related
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JP2003404544A
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English (en)
Japanese (ja)
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JP2005167003A5 (enExample
JP2005167003A (ja
Inventor
彰 沖田
拓己 樋山
英明 ▲高▼田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003404544A priority Critical patent/JP4508619B2/ja
Priority to US10/991,396 priority patent/US7283305B2/en
Publication of JP2005167003A publication Critical patent/JP2005167003A/ja
Publication of JP2005167003A5 publication Critical patent/JP2005167003A5/ja
Priority to US11/848,398 priority patent/US7646493B2/en
Application granted granted Critical
Publication of JP4508619B2 publication Critical patent/JP4508619B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2003404544A 2003-12-03 2003-12-03 固体撮像装置の製造方法 Expired - Fee Related JP4508619B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003404544A JP4508619B2 (ja) 2003-12-03 2003-12-03 固体撮像装置の製造方法
US10/991,396 US7283305B2 (en) 2003-12-03 2004-11-19 Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device
US11/848,398 US7646493B2 (en) 2003-12-03 2007-08-31 Solid state image pickup device, method for producing the same, and image pickup system comprising the solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003404544A JP4508619B2 (ja) 2003-12-03 2003-12-03 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005167003A JP2005167003A (ja) 2005-06-23
JP2005167003A5 JP2005167003A5 (enExample) 2007-01-25
JP4508619B2 true JP4508619B2 (ja) 2010-07-21

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JP2003404544A Expired - Fee Related JP4508619B2 (ja) 2003-12-03 2003-12-03 固体撮像装置の製造方法

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US (2) US7283305B2 (enExample)
JP (1) JP4508619B2 (enExample)

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JP3890333B2 (ja) * 2004-02-06 2007-03-07 キヤノン株式会社 固体撮像装置
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JP5089017B2 (ja) * 2004-09-01 2012-12-05 キヤノン株式会社 固体撮像装置及び固体撮像システム
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JP5178266B2 (ja) * 2008-03-19 2013-04-10 キヤノン株式会社 固体撮像装置
JP5094498B2 (ja) 2008-03-27 2012-12-12 キヤノン株式会社 固体撮像装置及び撮像システム
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JP5353356B2 (ja) * 2009-03-25 2013-11-27 凸版印刷株式会社 固体撮像素子及びその製造方法
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JP5539105B2 (ja) * 2009-09-24 2014-07-02 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
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JP5858695B2 (ja) 2011-09-08 2016-02-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
JP5901212B2 (ja) 2011-10-07 2016-04-06 キヤノン株式会社 光電変換システム
JP5484422B2 (ja) 2011-10-07 2014-05-07 キヤノン株式会社 固体撮像装置
JP6053505B2 (ja) 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
JP6319946B2 (ja) 2013-04-18 2018-05-09 キヤノン株式会社 固体撮像装置及び撮像システム
JP6100074B2 (ja) 2013-04-25 2017-03-22 キヤノン株式会社 光電変換装置及び撮像システム
JP6174901B2 (ja) 2013-05-10 2017-08-02 キヤノン株式会社 固体撮像装置及びカメラ
JP6338443B2 (ja) * 2013-07-11 2018-06-06 キヤノン株式会社 固体撮像素子およびそれを用いた撮像装置
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Also Published As

Publication number Publication date
US20080174688A1 (en) 2008-07-24
US7646493B2 (en) 2010-01-12
JP2005167003A (ja) 2005-06-23
US20050122418A1 (en) 2005-06-09
US7283305B2 (en) 2007-10-16

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