JP2009267252A - 撮像センサ、及び撮像装置 - Google Patents
撮像センサ、及び撮像装置 Download PDFInfo
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- JP2009267252A JP2009267252A JP2008117627A JP2008117627A JP2009267252A JP 2009267252 A JP2009267252 A JP 2009267252A JP 2008117627 A JP2008117627 A JP 2008117627A JP 2008117627 A JP2008117627 A JP 2008117627A JP 2009267252 A JP2009267252 A JP 2009267252A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- 238000012546 transfer Methods 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 239000011229 interlayer Substances 0.000 description 15
- 230000007423 decrease Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100132468 Arabidopsis thaliana NAC59 gene Proteins 0.000 description 2
- 101100518461 Arabidopsis thaliana ORS1 gene Proteins 0.000 description 2
- 101001122499 Homo sapiens Nociceptin receptor Proteins 0.000 description 2
- 102100028646 Nociceptin receptor Human genes 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】撮像センサは、受光面を有する光電変換部と、電荷を電圧に変換する電荷電圧変換部と、ゲート電極を有し、前記光電変換部で発生した電荷を前記電荷電圧変換部へ転送するための転送トランジスタと、前記光電変換部の上方における開口領域を規定する多層配線構造と、光が前記開口領域を通過して前記光電変換部へ到達するように導く導波路とを備え、前記多層配線構造は、最上の配線層であり、前記開口領域における第1の方向の2つの輪郭辺を規定する第1の配線層と、前記受光面に垂直な方向における前記ゲート電極と前記第1の配線層との間に配され、前記開口領域における第2の方向の2つの輪郭辺を規定する第2の配線層とを含み、前記ゲート電極は、長手方向が前記第1の方向に沿うように、前記受光面の一部に重なる位置に配されている
【選択図】図1
Description
90 撮像装置
Claims (6)
- 受光面を有する光電変換部と、
電荷を電圧に変換する電荷電圧変換部と、
ゲート電極を有し、前記光電変換部で発生した電荷を前記電荷電圧変換部へ転送するための転送トランジスタと、
前記光電変換部の上方における開口領域を規定する多層配線構造と、
光が前記開口領域を通過して前記光電変換部へ到達するように導く導波路と、
を備え、
前記多層配線構造は、
最上の配線層であり、前記開口領域における第1の方向の2つの輪郭辺を規定する第1の配線層と、
前記受光面に垂直な方向における前記ゲート電極と前記第1の配線層との間に配され、前記開口領域における第2の方向の2つの輪郭辺を規定する第2の配線層と、
を含み、
前記ゲート電極は、長手方向が前記第1の方向に沿うように、前記受光面の一部に重なる位置に配されている
ことを特徴とする撮像センサ。 - 前記導波路は、前記受光面に垂直な方向から透視した場合に、前記第1の方向の2つの輪郭辺の間に上面が配されるとともに、前記上面の内側であって前記ゲート電極と重ならない位置に下面が配されおり、
前記ゲート電極は、前記受光面に垂直な方向から透視した場合に、前記第1の配線層に重なる位置に配されている
ことを特徴とする請求項1に記載の撮像センサ。 - 前記第1の配線層は、前記転送トランジスタに転送信号を供給するための転送制御線を含み、
前記ゲート電極は、前記受光面に垂直な方向から透視した場合に前記転送制御線に重なる位置において、前記転送制御線に接続されている
ことを特徴とする請求項2に記載の撮像センサ。 - 前記第2の方向の輪郭辺と前記下面との間隔は、前記受光面に垂直な方向から透視した場合に、前記第1の方向の輪郭辺と前記下面との間隔より小さい
ことを特徴とする請求項2又は3に記載の撮像センサ。 - 前記導波路は、
断面視における前記上面の縁部から前記下面の縁部へ前記開口領域の中心を通る法線へ近づくように傾斜した側面をさらに有している
ことを特徴とする請求項2又は3に記載の撮像センサ。 - 請求項1から5のいずれか1項に記載の撮像センサと、
前記撮像センサの撮像面へ像を形成する光学系と、
前記撮像センサから出力された信号を処理して画像データを生成する信号処理部と、
を備えたことを特徴とする撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008117627A JP2009267252A (ja) | 2008-04-28 | 2008-04-28 | 撮像センサ、及び撮像装置 |
US12/425,484 US7741590B2 (en) | 2008-04-28 | 2009-04-17 | Image sensor and image sensing apparatus comprising waveguide and multilayer wiring structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008117627A JP2009267252A (ja) | 2008-04-28 | 2008-04-28 | 撮像センサ、及び撮像装置 |
Publications (1)
Publication Number | Publication Date |
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JP2009267252A true JP2009267252A (ja) | 2009-11-12 |
Family
ID=41214068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008117627A Pending JP2009267252A (ja) | 2008-04-28 | 2008-04-28 | 撮像センサ、及び撮像装置 |
Country Status (2)
Country | Link |
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US (1) | US7741590B2 (ja) |
JP (1) | JP2009267252A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109691086A (zh) * | 2016-08-24 | 2019-04-26 | 国立大学法人静冈大学 | 光电转换元件及固体摄像装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011243885A (ja) * | 2010-05-20 | 2011-12-01 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP5693082B2 (ja) * | 2010-08-09 | 2015-04-01 | キヤノン株式会社 | 撮像装置 |
CN114739462B (zh) * | 2022-05-05 | 2024-04-05 | 京东方科技集团股份有限公司 | 交互装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004221532A (ja) * | 2002-12-25 | 2004-08-05 | Sony Corp | 固体撮像素子およびその製造方法 |
JP2005167003A (ja) * | 2003-12-03 | 2005-06-23 | Canon Inc | 固体撮像装置、その製造方法、および該固体撮像装置を備えた撮像システム |
JP2006013520A (ja) * | 2004-06-28 | 2006-01-12 | Samsung Electronics Co Ltd | 光吸収膜を有するイメージセンサ集積回路素子及びその製造方法 |
JP2006128383A (ja) * | 2004-10-28 | 2006-05-18 | Canon Inc | 固体撮像素子及びその製造方法 |
JP2006319037A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | 固体撮像素子 |
JP2007095791A (ja) * | 2005-09-27 | 2007-04-12 | Canon Inc | 撮像装置の製造方法 |
JP2008091800A (ja) * | 2006-10-04 | 2008-04-17 | Canon Inc | 撮像素子及びその製造方法並びに撮像システム |
JP2008283070A (ja) * | 2007-05-11 | 2008-11-20 | Canon Inc | 撮像素子 |
Family Cites Families (2)
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KR20110015473A (ko) * | 2002-12-13 | 2011-02-15 | 소니 주식회사 | 고체 촬상 소자 및 그 제조방법 |
US7973271B2 (en) * | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
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2008
- 2008-04-28 JP JP2008117627A patent/JP2009267252A/ja active Pending
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2009
- 2009-04-17 US US12/425,484 patent/US7741590B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004221532A (ja) * | 2002-12-25 | 2004-08-05 | Sony Corp | 固体撮像素子およびその製造方法 |
JP2005167003A (ja) * | 2003-12-03 | 2005-06-23 | Canon Inc | 固体撮像装置、その製造方法、および該固体撮像装置を備えた撮像システム |
JP2006013520A (ja) * | 2004-06-28 | 2006-01-12 | Samsung Electronics Co Ltd | 光吸収膜を有するイメージセンサ集積回路素子及びその製造方法 |
JP2006128383A (ja) * | 2004-10-28 | 2006-05-18 | Canon Inc | 固体撮像素子及びその製造方法 |
JP2006319037A (ja) * | 2005-05-11 | 2006-11-24 | Canon Inc | 固体撮像素子 |
JP2007095791A (ja) * | 2005-09-27 | 2007-04-12 | Canon Inc | 撮像装置の製造方法 |
JP2008091800A (ja) * | 2006-10-04 | 2008-04-17 | Canon Inc | 撮像素子及びその製造方法並びに撮像システム |
JP2008283070A (ja) * | 2007-05-11 | 2008-11-20 | Canon Inc | 撮像素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109691086A (zh) * | 2016-08-24 | 2019-04-26 | 国立大学法人静冈大学 | 光电转换元件及固体摄像装置 |
CN109691086B (zh) * | 2016-08-24 | 2021-10-22 | 国立大学法人静冈大学 | 光电转换元件 |
Also Published As
Publication number | Publication date |
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US20090266975A1 (en) | 2009-10-29 |
US7741590B2 (en) | 2010-06-22 |
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