DE69320113T2 - Festkörper-Bildsensor und Verfahren zu seiner Herstellung - Google Patents
Festkörper-Bildsensor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE69320113T2 DE69320113T2 DE69320113T DE69320113T DE69320113T2 DE 69320113 T2 DE69320113 T2 DE 69320113T2 DE 69320113 T DE69320113 T DE 69320113T DE 69320113 T DE69320113 T DE 69320113T DE 69320113 T2 DE69320113 T2 DE 69320113T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- image sensor
- solid state
- state image
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13045892 | 1992-05-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69320113D1 DE69320113D1 (de) | 1998-09-10 |
DE69320113T2 true DE69320113T2 (de) | 1999-03-11 |
Family
ID=15034723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69320113T Expired - Fee Related DE69320113T2 (de) | 1992-05-22 | 1993-05-24 | Festkörper-Bildsensor und Verfahren zu seiner Herstellung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5514888A (de) |
EP (1) | EP0576144B1 (de) |
DE (1) | DE69320113T2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004017776A1 (de) * | 2004-04-13 | 2005-11-03 | Siemens Ag | Sonnensensor |
DE10230134B4 (de) * | 2001-08-23 | 2010-06-10 | Micron Technology, Inc. | Bildsensor und Verfahren zu dessen Herstellung |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
JPH0964325A (ja) * | 1995-08-23 | 1997-03-07 | Sony Corp | 固体撮像素子とその製造方法 |
JP3308778B2 (ja) * | 1995-09-29 | 2002-07-29 | 株式会社東芝 | 固体撮像装置の製造方法 |
KR0186195B1 (ko) * | 1995-12-11 | 1999-05-01 | 문정환 | 컬러선형 전하결합소자 및 이의 구동방법 |
KR100223853B1 (ko) * | 1996-08-26 | 1999-10-15 | 구본준 | 고체촬상소자의 구조 및 제조방법 |
GB9618720D0 (en) * | 1996-09-07 | 1996-10-16 | Philips Electronics Nv | Electrical device comprising an array of pixels |
US6076932A (en) * | 1996-09-26 | 2000-06-20 | Matsushita Electric Industrial Co., Ltd. | Light absorber and optical equipment |
US5888841A (en) * | 1996-10-01 | 1999-03-30 | Blue Sky Research | Method of making an electro-optical device with integral lens |
JP3003597B2 (ja) * | 1996-11-18 | 2000-01-31 | 日本電気株式会社 | 固体撮像素子 |
JPH10332920A (ja) * | 1997-05-27 | 1998-12-18 | Sony Corp | カラー固体撮像装置のカラーフィルタの形成方法 |
KR100223805B1 (ko) * | 1997-06-13 | 1999-10-15 | 구본준 | 고체 촬상소자의 제조방법 |
JP3695082B2 (ja) * | 1997-07-11 | 2005-09-14 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法および撮像装置 |
US6057586A (en) * | 1997-09-26 | 2000-05-02 | Intel Corporation | Method and apparatus for employing a light shield to modulate pixel color responsivity |
TW465104B (en) * | 1997-12-25 | 2001-11-21 | Canon Kk | Contact type image sensor and information processing apparatus |
US6169317B1 (en) * | 1998-02-13 | 2001-01-02 | Canon Kabushiki Kaisha | Photoelectric conversion device and image sensor |
JP3159171B2 (ja) * | 1998-06-05 | 2001-04-23 | 日本電気株式会社 | 固体撮像装置 |
US6074888A (en) * | 1998-08-18 | 2000-06-13 | Trw Inc. | Method for fabricating semiconductor micro epi-optical components |
US6665014B1 (en) * | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
KR100303774B1 (ko) * | 1998-12-30 | 2001-11-15 | 박종섭 | 개선된 광감도를 갖는 씨모스이미지센서 제조방법 |
US6137634A (en) * | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
JP3319419B2 (ja) * | 1999-02-24 | 2002-09-03 | 日本電気株式会社 | 固体撮像装置 |
JP3434740B2 (ja) * | 1999-06-30 | 2003-08-11 | Necエレクトロニクス株式会社 | 固体撮像装置 |
KR100388803B1 (ko) * | 1999-07-14 | 2003-07-12 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그 제조방법 |
JP2001068658A (ja) * | 1999-08-27 | 2001-03-16 | Sony Corp | 固体撮像装置及びその製造方法 |
US6582988B1 (en) | 1999-09-30 | 2003-06-24 | Taiwan Semiconductor Manufacturing Company | Method for forming micro lens structures |
US7129982B1 (en) * | 1999-12-30 | 2006-10-31 | Intel Corporation | Color image sensor with integrated binary optical elements |
US6417022B1 (en) * | 2000-04-12 | 2002-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for making long focal length micro-lens for color filters |
US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
JP3977997B2 (ja) | 2001-05-11 | 2007-09-19 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US6590239B2 (en) | 2001-07-30 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region |
JP2004063778A (ja) * | 2002-07-29 | 2004-02-26 | Renesas Technology Corp | 固体撮像素子 |
JP3709873B2 (ja) * | 2003-02-19 | 2005-10-26 | ソニー株式会社 | 固体撮像装置及び撮像カメラ |
WO2004079825A1 (ja) * | 2003-03-06 | 2004-09-16 | Sony Corporation | 固体撮像素子及びその製造方法、並びに固体撮像素子の駆動方法 |
JP3885769B2 (ja) * | 2003-06-02 | 2007-02-28 | ソニー株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
JP2005093866A (ja) * | 2003-09-19 | 2005-04-07 | Fuji Film Microdevices Co Ltd | 固体撮像素子の製造方法 |
KR100562293B1 (ko) * | 2003-10-01 | 2006-03-22 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 이의 제조 방법 |
JP4508619B2 (ja) * | 2003-12-03 | 2010-07-21 | キヤノン株式会社 | 固体撮像装置の製造方法 |
KR100630679B1 (ko) * | 2003-12-17 | 2006-10-02 | 삼성전자주식회사 | 포토 다이오드 및 이의 제조 방법 |
US20050218308A1 (en) * | 2004-03-30 | 2005-10-06 | Eastman Kodak Company | Electronic imagers using an absorbing filter for flare reduction |
US7372497B2 (en) * | 2004-04-28 | 2008-05-13 | Taiwan Semiconductor Manufacturing Company | Effective method to improve sub-micron color filter sensitivity |
US7583863B2 (en) * | 2004-05-10 | 2009-09-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for wavelength-dependent imaging and detection using a hybrid filter |
US20060110094A1 (en) * | 2004-11-19 | 2006-05-25 | Bernhard Bachl | Bidirectional electro-optical device for coupling light-signals into and out of a waveguide |
US7180044B2 (en) * | 2004-12-03 | 2007-02-20 | United Microelectronics Corp. | Image sensor device with color filters and manufacturing method thereof |
KR100698067B1 (ko) * | 2004-12-30 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그의 제조방법 |
KR100640958B1 (ko) * | 2004-12-30 | 2006-11-02 | 동부일렉트로닉스 주식회사 | 보호막을 이용한 씨모스 이미지 센서 및 그 제조방법 |
US7704778B2 (en) * | 2005-02-23 | 2010-04-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens structure for image sensors |
US7609249B2 (en) * | 2005-04-21 | 2009-10-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Position determination utilizing a cordless device |
KR100610497B1 (ko) * | 2005-07-25 | 2006-08-09 | 삼성전자주식회사 | 이미지 센서 소자의 마이크로렌즈의 오염 방지 방법 및그를 이용한 이미지 센서 소자의 제조 방법 |
TWI289365B (en) * | 2005-09-29 | 2007-11-01 | Visera Technologies Co Ltd | Wafer scale image module |
JP2007329714A (ja) * | 2006-06-08 | 2007-12-20 | Funai Electric Co Ltd | 複眼撮像装置 |
US7335870B1 (en) | 2006-10-06 | 2008-02-26 | Advanced Chip Engineering Technology Inc. | Method for image sensor protection |
US20080083980A1 (en) * | 2006-10-06 | 2008-04-10 | Advanced Chip Engineering Technology Inc. | Cmos image sensor chip scale package with die receiving through-hole and method of the same |
US20080211075A1 (en) * | 2006-10-06 | 2008-09-04 | Advanced Chip Engineering Technology Inc. | Image sensor chip scale package having inter-adhesion with gap and method of the same |
US20080136012A1 (en) | 2006-12-08 | 2008-06-12 | Advanced Chip Engineering Technology Inc. | Imagine sensor package and forming method of the same |
US7566854B2 (en) * | 2006-12-08 | 2009-07-28 | Advanced Chip Engineering Technology Inc. | Image sensor module |
KR100843969B1 (ko) * | 2006-12-20 | 2008-07-03 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7820498B2 (en) * | 2008-02-08 | 2010-10-26 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with light reflecting transfer gate |
US8350952B2 (en) * | 2008-06-04 | 2013-01-08 | Omnivision Technologies, Inc. | Image sensors with improved angle response |
JP5568934B2 (ja) * | 2009-09-29 | 2014-08-13 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ |
WO2011142065A1 (ja) * | 2010-05-14 | 2011-11-17 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP2013084713A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 固体撮像素子および製造方法、並びに撮像ユニット |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
KR20150022560A (ko) * | 2013-08-23 | 2015-03-04 | 삼성전기주식회사 | 인쇄회로기판 및 인쇄회로기판 제조 방법 |
US9978790B2 (en) * | 2013-11-14 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method for manufacturing thereof |
US10373995B2 (en) | 2014-09-19 | 2019-08-06 | Microsoft Technology Licensing, Llc | Image sensor bending using tension |
US9570488B2 (en) | 2014-09-19 | 2017-02-14 | Microsoft Technology Licensing, Llc | Image sensor bending by induced substrate swelling |
EP3024029B1 (de) * | 2014-11-19 | 2020-04-22 | ams AG | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Aperturanordnung |
US10304900B2 (en) | 2015-04-02 | 2019-05-28 | Microsoft Technology Licensing, Llc | Bending semiconductor chip in molds having radially varying curvature |
US9870927B2 (en) | 2015-04-02 | 2018-01-16 | Microsoft Technology Licensing, Llc | Free-edge semiconductor chip bending |
CN108701705B (zh) * | 2016-03-15 | 2022-11-18 | 索尼公司 | 固态成像元件及其制造方法和电子设备 |
US10062727B2 (en) | 2016-09-09 | 2018-08-28 | Microsoft Technology Licensing, Llc | Strain relieving die for curved image sensors |
KR102614907B1 (ko) * | 2018-04-04 | 2023-12-19 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서 제조 방법 |
US10916575B2 (en) | 2018-04-04 | 2021-02-09 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing image sensor |
FR3084207B1 (fr) * | 2018-07-19 | 2021-02-19 | Isorg | Systeme optique et son procede de fabrication |
US11953372B2 (en) * | 2021-02-18 | 2024-04-09 | Innolux Corporation | Optical sensing device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4078243A (en) * | 1975-12-12 | 1978-03-07 | International Business Machines Corporation | Phototransistor array having uniform current response and method of manufacture |
JPH02156670A (ja) * | 1988-12-09 | 1990-06-15 | Sharp Corp | 固体撮像素子 |
JPH02237068A (ja) * | 1989-03-09 | 1990-09-19 | Matsushita Electron Corp | 固体撮像装置 |
JPH03191302A (ja) * | 1989-12-20 | 1991-08-21 | Nec Corp | カラー固体撮像素子 |
JPH03194969A (ja) * | 1989-12-22 | 1991-08-26 | Toshiba Corp | 固体撮像装置 |
US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
JPH03276677A (ja) * | 1990-03-26 | 1991-12-06 | Nec Corp | 固体撮像素子 |
JPH04116976A (ja) * | 1990-09-07 | 1992-04-17 | Sharp Corp | 固体撮像装置 |
DE69218469T2 (de) * | 1991-01-17 | 1997-11-06 | Sony Corp | CCD-Bildaufnahmevorrichtung |
-
1993
- 1993-05-24 DE DE69320113T patent/DE69320113T2/de not_active Expired - Fee Related
- 1993-05-24 US US08/067,507 patent/US5514888A/en not_active Expired - Fee Related
- 1993-05-24 EP EP93304004A patent/EP0576144B1/de not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10230134B4 (de) * | 2001-08-23 | 2010-06-10 | Micron Technology, Inc. | Bildsensor und Verfahren zu dessen Herstellung |
DE102004017776A1 (de) * | 2004-04-13 | 2005-11-03 | Siemens Ag | Sonnensensor |
Also Published As
Publication number | Publication date |
---|---|
US5514888A (en) | 1996-05-07 |
EP0576144B1 (de) | 1998-08-05 |
EP0576144A1 (de) | 1993-12-29 |
DE69320113D1 (de) | 1998-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, |
|
8339 | Ceased/non-payment of the annual fee |