DE69218469T2 - CCD-Bildaufnahmevorrichtung - Google Patents

CCD-Bildaufnahmevorrichtung

Info

Publication number
DE69218469T2
DE69218469T2 DE69218469T DE69218469T DE69218469T2 DE 69218469 T2 DE69218469 T2 DE 69218469T2 DE 69218469 T DE69218469 T DE 69218469T DE 69218469 T DE69218469 T DE 69218469T DE 69218469 T2 DE69218469 T2 DE 69218469T2
Authority
DE
Germany
Prior art keywords
imaging device
ccd imaging
ccd
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218469T
Other languages
English (en)
Other versions
DE69218469D1 (de
Inventor
Michio Negishi
Kazuya Yonemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP01823791A external-priority patent/JP3160915B2/ja
Priority claimed from JP3018239A external-priority patent/JPH04279060A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69218469D1 publication Critical patent/DE69218469D1/de
Application granted granted Critical
Publication of DE69218469T2 publication Critical patent/DE69218469T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69218469T 1991-01-17 1992-01-16 CCD-Bildaufnahmevorrichtung Expired - Fee Related DE69218469T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01823791A JP3160915B2 (ja) 1991-01-17 1991-01-17 Ｃｃｄ撮像素子
JP3018239A JPH04279060A (ja) 1991-01-17 1991-01-17 フレームインターライン型ｃｃｄ撮像素子

Publications (2)

Publication Number Publication Date
DE69218469D1 DE69218469D1 (de) 1997-04-30
DE69218469T2 true DE69218469T2 (de) 1997-11-06

Family

ID=26354886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218469T Expired - Fee Related DE69218469T2 (de) 1991-01-17 1992-01-16 CCD-Bildaufnahmevorrichtung

Country Status (4)

Country Link
US (1) US5250825A (de)
EP (1) EP0495503B1 (de)
KR (1) KR100214039B1 (de)
DE (1) DE69218469T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275675A (ja) * 1992-03-27 1993-10-22 Nec Corp 固体撮像装置
EP0576144B1 (de) * 1992-05-22 1998-08-05 Matsushita Electronics Corporation Festkörper-Bildsensor und Verfahren zu seiner Herstellung
JPH06163868A (ja) * 1992-09-28 1994-06-10 Sanyo Electric Co Ltd ホトダイオード内蔵半導体装置
JPH0785502B2 (ja) * 1993-01-22 1995-09-13 日本電気株式会社 カラーリニアイメージセンサ
JPH06268192A (ja) * 1993-03-12 1994-09-22 Toshiba Corp 固体撮像装置
JP3456000B2 (ja) * 1993-05-17 2003-10-14 ソニー株式会社 固体撮像素子及びその製造方法
JP2865083B2 (ja) * 1996-11-08 1999-03-08 日本電気株式会社 固体撮像素子およびその駆動方法
KR100239412B1 (ko) * 1996-12-28 2000-01-15 김영환 고체 촬상 소자 및 그의 제조 방법
US5937025A (en) * 1997-03-21 1999-08-10 Dalsa, Inc. High speed CCD bus structure
JP3180742B2 (ja) * 1997-11-14 2001-06-25 日本電気株式会社 Ｃｃｄ型固体撮像装置及びその製造方法
JP2000223689A (ja) * 1999-02-03 2000-08-11 Toshiba Corp 固体撮像装置
JP3319419B2 (ja) * 1999-02-24 2002-09-03 日本電気株式会社 固体撮像装置
JP3541155B2 (ja) * 2000-02-17 2004-07-07 シャープ株式会社 固体撮像装置およびその製造方法
JP4725049B2 (ja) * 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子
DE102007051752B4 (de) 2007-10-30 2010-01-28 X-Fab Semiconductor Foundries Ag Licht blockierende Schichtenfolge und Verfahren zu deren Herstellung
JP2009238875A (ja) * 2008-03-26 2009-10-15 Panasonic Corp 固体撮像装置
JP5296406B2 (ja) * 2008-04-02 2013-09-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP2010177599A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法
US8760543B2 (en) 2011-09-26 2014-06-24 Truesense Imaging, Inc. Dark reference in CCD image sensors
US9848142B2 (en) 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor
CN108565271A (zh) * 2018-01-23 2018-09-21 中国电子科技集团公司第四十四研究所 用于内线转移ccd的引线-遮光结构

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0666452B2 (ja) * 1987-09-04 1994-08-24 株式会社東芝 固体撮像装置の製造方法

Also Published As

Publication number Publication date
US5250825A (en) 1993-10-05
EP0495503A2 (de) 1992-07-22
EP0495503A3 (en) 1993-01-27
DE69218469D1 (de) 1997-04-30
KR920015590A (ko) 1992-08-27
KR100214039B1 (ko) 1999-08-02
EP0495503B1 (de) 1997-03-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee