JP4493182B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4493182B2
JP4493182B2 JP2000252158A JP2000252158A JP4493182B2 JP 4493182 B2 JP4493182 B2 JP 4493182B2 JP 2000252158 A JP2000252158 A JP 2000252158A JP 2000252158 A JP2000252158 A JP 2000252158A JP 4493182 B2 JP4493182 B2 JP 4493182B2
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JP
Japan
Prior art keywords
region
insulating film
film
semiconductor substrate
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000252158A
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English (en)
Japanese (ja)
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JP2002076299A (ja
Inventor
崇浩 大中道
悟 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000252158A priority Critical patent/JP4493182B2/ja
Priority to US09/773,624 priority patent/US6469339B1/en
Priority to KR10-2001-0017788A priority patent/KR100383780B1/ko
Publication of JP2002076299A publication Critical patent/JP2002076299A/ja
Application granted granted Critical
Publication of JP4493182B2 publication Critical patent/JP4493182B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2000252158A 2000-08-23 2000-08-23 半導体装置 Expired - Fee Related JP4493182B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000252158A JP4493182B2 (ja) 2000-08-23 2000-08-23 半導体装置
US09/773,624 US6469339B1 (en) 2000-08-23 2001-02-02 Semiconductor memory with voids for suppressing crystal defects
KR10-2001-0017788A KR100383780B1 (ko) 2000-08-23 2001-04-04 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000252158A JP4493182B2 (ja) 2000-08-23 2000-08-23 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010047579A Division JP2010153904A (ja) 2010-03-04 2010-03-04 半導体装置

Publications (2)

Publication Number Publication Date
JP2002076299A JP2002076299A (ja) 2002-03-15
JP4493182B2 true JP4493182B2 (ja) 2010-06-30

Family

ID=18741451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000252158A Expired - Fee Related JP4493182B2 (ja) 2000-08-23 2000-08-23 半導体装置

Country Status (3)

Country Link
US (1) US6469339B1 (ko)
JP (1) JP4493182B2 (ko)
KR (1) KR100383780B1 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489253B1 (en) * 2001-02-16 2002-12-03 Advanced Micro Devices, Inc. Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
JP3917063B2 (ja) 2002-11-21 2007-05-23 株式会社東芝 半導体装置及びその製造方法
US7045849B2 (en) * 2003-05-21 2006-05-16 Sandisk Corporation Use of voids between elements in semiconductor structures for isolation
JP4786126B2 (ja) * 2003-06-04 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2006302950A (ja) 2005-04-15 2006-11-02 Renesas Technology Corp 不揮発性半導体装置および不揮発性半導体装置の製造方法
KR100784860B1 (ko) 2005-10-31 2007-12-14 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
US8436410B2 (en) 2005-10-31 2013-05-07 Samsung Electronics Co., Ltd. Semiconductor devices comprising a plurality of gate structures
EP1804293A1 (en) * 2005-12-30 2007-07-04 STMicroelectronics S.r.l. Process for manufacturing a non volatile memory electronic device
JP2007299975A (ja) * 2006-05-01 2007-11-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4827639B2 (ja) * 2006-07-12 2011-11-30 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7948021B2 (en) 2007-04-27 2011-05-24 Kabushiki Kaisha Toshiba Semiconductor memory device and method of fabricating the same
JP2009010088A (ja) * 2007-06-27 2009-01-15 Toshiba Corp 半導体装置とその製造方法
JP2009194244A (ja) * 2008-02-15 2009-08-27 Toshiba Corp 半導体記憶装置及びその製造方法
JP4729060B2 (ja) * 2008-02-26 2011-07-20 株式会社東芝 半導体記憶装置の製造方法
KR100972453B1 (ko) * 2010-04-05 2010-07-28 (주)종합건축사사무소건원 베란다용 안전난간
KR20120015178A (ko) * 2010-08-11 2012-02-21 삼성전자주식회사 반도체 소자 및 반도체 소자 제조 방법
JP5570953B2 (ja) 2010-11-18 2014-08-13 株式会社東芝 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法
SG181212A1 (en) * 2010-11-18 2012-06-28 Toshiba Kk Nonvolatile semiconductor memory and method of manufacturing with multiple air gaps
KR101813513B1 (ko) 2011-11-30 2018-01-02 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조 방법
JP5526162B2 (ja) * 2012-01-16 2014-06-18 ルネサスエレクトロニクス株式会社 不揮発性半導体装置および不揮発性半導体装置の製造方法
KR20140030483A (ko) * 2012-08-30 2014-03-12 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
US9129995B2 (en) * 2013-08-23 2015-09-08 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
CN105310173B (zh) * 2014-07-31 2017-05-24 福建登泰科技有限公司 一种设有拖鞋带固定扣的人字拖鞋
CN112992774B (zh) * 2019-12-02 2022-06-10 长鑫存储技术有限公司 间隙的形成方法
CN113314457B (zh) * 2020-02-27 2023-04-18 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251428A (ja) * 1997-12-31 1999-09-17 Lg Semicon Co Ltd 半導体デバイスの配線構造及び形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286146A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd 半導体装置
JP3597885B2 (ja) * 1994-06-06 2004-12-08 テキサス インスツルメンツ インコーポレイテツド 半導体装置
JPH0897379A (ja) 1994-09-27 1996-04-12 Sony Corp 半導体集積回路とその製法
JPH0964179A (ja) * 1995-08-25 1997-03-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6303464B1 (en) * 1996-12-30 2001-10-16 Intel Corporation Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer
JP2998678B2 (ja) 1997-02-17 2000-01-11 日本電気株式会社 半導体装置の製造方法
JP3519589B2 (ja) * 1997-12-24 2004-04-19 株式会社ルネサステクノロジ 半導体集積回路の製造方法
JP2000068482A (ja) * 1998-08-18 2000-03-03 Toshiba Corp 不揮発性半導体メモリ
JP2000100976A (ja) * 1998-09-21 2000-04-07 Matsushita Electronics Industry Corp 半導体メモリアレイ装置およびその製造方法
JP2000183149A (ja) * 1998-12-10 2000-06-30 Sanyo Electric Co Ltd 半導体装置
JP3540640B2 (ja) * 1998-12-22 2004-07-07 株式会社東芝 不揮発性半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251428A (ja) * 1997-12-31 1999-09-17 Lg Semicon Co Ltd 半導体デバイスの配線構造及び形成方法

Also Published As

Publication number Publication date
KR100383780B1 (ko) 2003-05-12
KR20020015934A (ko) 2002-03-02
US6469339B1 (en) 2002-10-22
JP2002076299A (ja) 2002-03-15

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