JP4413306B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4413306B2
JP4413306B2 JP07743299A JP7743299A JP4413306B2 JP 4413306 B2 JP4413306 B2 JP 4413306B2 JP 07743299 A JP07743299 A JP 07743299A JP 7743299 A JP7743299 A JP 7743299A JP 4413306 B2 JP4413306 B2 JP 4413306B2
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JP
Japan
Prior art keywords
block
address
decoder
memory
signal
Prior art date
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Expired - Lifetime
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JP07743299A
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English (en)
Japanese (ja)
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JP2000276896A (ja
JP2000276896A5 (enExample
Inventor
忠行 田浦
滋 渥美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP07743299A priority Critical patent/JP4413306B2/ja
Priority to TW089104073A priority patent/TWI223267B/zh
Priority to US09/532,824 priority patent/US6327180B2/en
Priority to KR10-2000-0014473A priority patent/KR100377307B1/ko
Priority to EP00105946A priority patent/EP1039388B1/en
Priority to DE60006177T priority patent/DE60006177T2/de
Priority to CNB001043927A priority patent/CN1199188C/zh
Publication of JP2000276896A publication Critical patent/JP2000276896A/ja
Priority to US09/961,429 priority patent/US6496413B2/en
Publication of JP2000276896A5 publication Critical patent/JP2000276896A5/ja
Application granted granted Critical
Publication of JP4413306B2 publication Critical patent/JP4413306B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP07743299A 1999-03-23 1999-03-23 半導体記憶装置 Expired - Lifetime JP4413306B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP07743299A JP4413306B2 (ja) 1999-03-23 1999-03-23 半導体記憶装置
TW089104073A TWI223267B (en) 1999-03-23 2000-03-07 Semiconductor memory device for effecting erasing operation in block unit
US09/532,824 US6327180B2 (en) 1999-03-23 2000-03-21 Semiconductor memory device for effecting erasing operation in block unit
KR10-2000-0014473A KR100377307B1 (ko) 1999-03-23 2000-03-22 블럭 단위로 소거를 행하는 반도체 기억 장치
EP00105946A EP1039388B1 (en) 1999-03-23 2000-03-23 Block erasable semiconductor memory device with defective block replacement
DE60006177T DE60006177T2 (de) 1999-03-23 2000-03-23 Block-löschbare Halbleiterspeicherschaltung mit Ersetzung defekter Speicherblöcke
CNB001043927A CN1199188C (zh) 1999-03-23 2000-03-23 以块单位进行擦除的半导体存储装置
US09/961,429 US6496413B2 (en) 1999-03-23 2001-09-25 Semiconductor memory device for effecting erasing operation in block unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07743299A JP4413306B2 (ja) 1999-03-23 1999-03-23 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2000276896A JP2000276896A (ja) 2000-10-06
JP2000276896A5 JP2000276896A5 (enExample) 2005-11-10
JP4413306B2 true JP4413306B2 (ja) 2010-02-10

Family

ID=13633857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07743299A Expired - Lifetime JP4413306B2 (ja) 1999-03-23 1999-03-23 半導体記憶装置

Country Status (7)

Country Link
US (2) US6327180B2 (enExample)
EP (1) EP1039388B1 (enExample)
JP (1) JP4413306B2 (enExample)
KR (1) KR100377307B1 (enExample)
CN (1) CN1199188C (enExample)
DE (1) DE60006177T2 (enExample)
TW (1) TWI223267B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9098628B2 (en) 2012-07-26 2015-08-04 International Business Machines Corporation Memory system with multiple block write control to control state data

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6462985B2 (en) 1999-12-10 2002-10-08 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory for storing initially-setting data
US6421284B1 (en) * 2000-05-26 2002-07-16 Hitachi, Limited Semiconductor device
JP2003085993A (ja) * 2001-09-07 2003-03-20 Toshiba Corp 不揮発性半導体記憶装置およびその不良救済方法
US7290117B2 (en) * 2001-12-20 2007-10-30 Hewlett-Packard Development Company, L.P. Memory having increased data-transfer speed and related systems and methods
KR100769800B1 (ko) * 2001-12-26 2007-10-23 주식회사 하이닉스반도체 멀티 플레인 블럭 어드레스 레지스터
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法
CN101006520B (zh) * 2004-04-21 2010-05-05 斯班逊有限公司 非易失性半导体器件及非易失性半导体器件的擦除动作不良自动救济方法
US7221603B2 (en) * 2005-05-12 2007-05-22 Micron Technology, Inc. Defective block handling in a flash memory device
JP4761959B2 (ja) * 2005-12-26 2011-08-31 株式会社東芝 半導体集積回路装置
JP4828938B2 (ja) * 2005-12-28 2011-11-30 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
KR100685638B1 (ko) * 2006-03-31 2007-02-22 주식회사 하이닉스반도체 랜덤 프로그램 기능을 가지는 듀얼 플레인 타입 플래시메모리 장치 및 그 프로그램 동작 방법
KR100769772B1 (ko) 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 이를 이용한 소거 방법
WO2009060495A1 (ja) * 2007-11-05 2009-05-14 Fujitsu Limited 半導体記憶装置およびその制御方法
US7590001B2 (en) * 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
JP5131348B2 (ja) * 2008-03-19 2013-01-30 富士通セミコンダクター株式会社 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
US8787086B1 (en) * 2008-08-29 2014-07-22 The Arizona Board Of Regents For And On Behalf Of Arizona State University Inhibiting address transitions in unselected memory banks of solid state memory circuits
KR101094997B1 (ko) 2010-07-26 2011-12-20 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리페어 처리방법
CN102623059B (zh) * 2011-01-26 2015-10-28 中国科学院微电子研究所 一种半导体存储器件的复位方法
KR101920638B1 (ko) * 2011-12-02 2018-11-22 에스케이하이닉스 주식회사 반도체 메모리 장치
JP6682471B2 (ja) * 2017-03-24 2020-04-15 キオクシア株式会社 半導体記憶装置
US10908824B2 (en) * 2018-11-08 2021-02-02 Winbond Electronics Corp. Flash memory storage device and method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
JPH05109292A (ja) 1991-10-14 1993-04-30 Toshiba Corp 不揮発性半導体記憶装置
JP2647312B2 (ja) 1992-09-11 1997-08-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性半導体記憶装置
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay
JPH07334999A (ja) * 1994-06-07 1995-12-22 Hitachi Ltd 不揮発性半導体記憶装置及びデータプロセッサ
JP3160160B2 (ja) * 1994-09-28 2001-04-23 シャープ株式会社 半導体記憶装置
JP3263259B2 (ja) 1994-10-04 2002-03-04 株式会社東芝 半導体記憶装置
US5621690A (en) 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
KR0147194B1 (ko) 1995-05-26 1998-11-02 문정환 반도체 메모리 소자
US5774396A (en) * 1996-03-29 1998-06-30 Aplus Integrated Circuits, Inc. Flash memory with row redundancy
US5774471A (en) * 1996-12-17 1998-06-30 Integrated Silicon Solution Inc. Multiple location repair word line redundancy circuit
JP3762114B2 (ja) 1998-09-08 2006-04-05 株式会社東芝 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9098628B2 (en) 2012-07-26 2015-08-04 International Business Machines Corporation Memory system with multiple block write control to control state data

Also Published As

Publication number Publication date
EP1039388B1 (en) 2003-10-29
US6496413B2 (en) 2002-12-17
KR100377307B1 (ko) 2003-03-26
CN1199188C (zh) 2005-04-27
US20010012216A1 (en) 2001-08-09
US20020012270A1 (en) 2002-01-31
DE60006177D1 (de) 2003-12-04
EP1039388A3 (en) 2000-10-18
KR20000071465A (ko) 2000-11-25
CN1267888A (zh) 2000-09-27
EP1039388A2 (en) 2000-09-27
JP2000276896A (ja) 2000-10-06
DE60006177T2 (de) 2004-07-29
TWI223267B (en) 2004-11-01
US6327180B2 (en) 2001-12-04

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