CN1199188C - 以块单位进行擦除的半导体存储装置 - Google Patents

以块单位进行擦除的半导体存储装置 Download PDF

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Publication number
CN1199188C
CN1199188C CNB001043927A CN00104392A CN1199188C CN 1199188 C CN1199188 C CN 1199188C CN B001043927 A CNB001043927 A CN B001043927A CN 00104392 A CN00104392 A CN 00104392A CN 1199188 C CN1199188 C CN 1199188C
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China
Prior art keywords
block
address
decoder
signal
memory
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Expired - Lifetime
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CNB001043927A
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English (en)
Chinese (zh)
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CN1267888A (zh
Inventor
田浦忠行
渥美滋
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Kioxia Corp
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Toshiba Corp
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Publication of CN1267888A publication Critical patent/CN1267888A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
CNB001043927A 1999-03-23 2000-03-23 以块单位进行擦除的半导体存储装置 Expired - Lifetime CN1199188C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07743299A JP4413306B2 (ja) 1999-03-23 1999-03-23 半導体記憶装置
JP077432/1999 1999-03-23

Publications (2)

Publication Number Publication Date
CN1267888A CN1267888A (zh) 2000-09-27
CN1199188C true CN1199188C (zh) 2005-04-27

Family

ID=13633857

Family Applications (1)

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CNB001043927A Expired - Lifetime CN1199188C (zh) 1999-03-23 2000-03-23 以块单位进行擦除的半导体存储装置

Country Status (7)

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US (2) US6327180B2 (enExample)
EP (1) EP1039388B1 (enExample)
JP (1) JP4413306B2 (enExample)
KR (1) KR100377307B1 (enExample)
CN (1) CN1199188C (enExample)
DE (1) DE60006177T2 (enExample)
TW (1) TWI223267B (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6462985B2 (en) 1999-12-10 2002-10-08 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory for storing initially-setting data
US6421284B1 (en) * 2000-05-26 2002-07-16 Hitachi, Limited Semiconductor device
JP2003085993A (ja) * 2001-09-07 2003-03-20 Toshiba Corp 不揮発性半導体記憶装置およびその不良救済方法
US7290117B2 (en) * 2001-12-20 2007-10-30 Hewlett-Packard Development Company, L.P. Memory having increased data-transfer speed and related systems and methods
KR100769800B1 (ko) * 2001-12-26 2007-10-23 주식회사 하이닉스반도체 멀티 플레인 블럭 어드레스 레지스터
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法
CN101006520B (zh) * 2004-04-21 2010-05-05 斯班逊有限公司 非易失性半导体器件及非易失性半导体器件的擦除动作不良自动救济方法
US7221603B2 (en) * 2005-05-12 2007-05-22 Micron Technology, Inc. Defective block handling in a flash memory device
JP4761959B2 (ja) * 2005-12-26 2011-08-31 株式会社東芝 半導体集積回路装置
JP4828938B2 (ja) * 2005-12-28 2011-11-30 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
KR100685638B1 (ko) * 2006-03-31 2007-02-22 주식회사 하이닉스반도체 랜덤 프로그램 기능을 가지는 듀얼 플레인 타입 플래시메모리 장치 및 그 프로그램 동작 방법
KR100769772B1 (ko) 2006-09-29 2007-10-23 주식회사 하이닉스반도체 플래시 메모리 장치 및 이를 이용한 소거 방법
JP4985781B2 (ja) * 2007-11-05 2012-07-25 富士通株式会社 半導体記憶装置およびその制御方法
US7590001B2 (en) * 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
WO2009116117A1 (ja) * 2008-03-19 2009-09-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法
US8787086B1 (en) * 2008-08-29 2014-07-22 The Arizona Board Of Regents For And On Behalf Of Arizona State University Inhibiting address transitions in unselected memory banks of solid state memory circuits
KR101094997B1 (ko) 2010-07-26 2011-12-20 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 리페어 처리방법
CN102623059B (zh) * 2011-01-26 2015-10-28 中国科学院微电子研究所 一种半导体存储器件的复位方法
KR101920638B1 (ko) 2011-12-02 2018-11-22 에스케이하이닉스 주식회사 반도체 메모리 장치
US9098628B2 (en) 2012-07-26 2015-08-04 International Business Machines Corporation Memory system with multiple block write control to control state data
JP6682471B2 (ja) * 2017-03-24 2020-04-15 キオクシア株式会社 半導体記憶装置
US10908824B2 (en) * 2018-11-08 2021-02-02 Winbond Electronics Corp. Flash memory storage device and method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3019869B2 (ja) * 1990-10-16 2000-03-13 富士通株式会社 半導体メモリ
JPH05109292A (ja) 1991-10-14 1993-04-30 Toshiba Corp 不揮発性半導体記憶装置
JP2647312B2 (ja) 1992-09-11 1997-08-27 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性半導体記憶装置
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay
JPH07334999A (ja) * 1994-06-07 1995-12-22 Hitachi Ltd 不揮発性半導体記憶装置及びデータプロセッサ
JP3160160B2 (ja) * 1994-09-28 2001-04-23 シャープ株式会社 半導体記憶装置
JP3263259B2 (ja) 1994-10-04 2002-03-04 株式会社東芝 半導体記憶装置
US5621690A (en) 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
KR0147194B1 (ko) 1995-05-26 1998-11-02 문정환 반도체 메모리 소자
US5774396A (en) * 1996-03-29 1998-06-30 Aplus Integrated Circuits, Inc. Flash memory with row redundancy
US5774471A (en) * 1996-12-17 1998-06-30 Integrated Silicon Solution Inc. Multiple location repair word line redundancy circuit
JP3762114B2 (ja) 1998-09-08 2006-04-05 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US6327180B2 (en) 2001-12-04
KR100377307B1 (ko) 2003-03-26
EP1039388A3 (en) 2000-10-18
KR20000071465A (ko) 2000-11-25
DE60006177D1 (de) 2003-12-04
DE60006177T2 (de) 2004-07-29
CN1267888A (zh) 2000-09-27
JP4413306B2 (ja) 2010-02-10
TWI223267B (en) 2004-11-01
US20020012270A1 (en) 2002-01-31
US6496413B2 (en) 2002-12-17
EP1039388A2 (en) 2000-09-27
US20010012216A1 (en) 2001-08-09
EP1039388B1 (en) 2003-10-29
JP2000276896A (ja) 2000-10-06

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