DE60006177T2 - Block-löschbare Halbleiterspeicherschaltung mit Ersetzung defekter Speicherblöcke - Google Patents
Block-löschbare Halbleiterspeicherschaltung mit Ersetzung defekter Speicherblöcke Download PDFInfo
- Publication number
- DE60006177T2 DE60006177T2 DE60006177T DE60006177T DE60006177T2 DE 60006177 T2 DE60006177 T2 DE 60006177T2 DE 60006177 T DE60006177 T DE 60006177T DE 60006177 T DE60006177 T DE 60006177T DE 60006177 T2 DE60006177 T2 DE 60006177T2
- Authority
- DE
- Germany
- Prior art keywords
- block
- address
- signal
- memory cell
- defective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000002950 deficient Effects 0.000 title claims description 61
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000000872 buffer Substances 0.000 claims description 50
- 230000007547 defect Effects 0.000 claims description 22
- 238000007667 floating Methods 0.000 claims description 19
- 230000004044 response Effects 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000010276 construction Methods 0.000 claims description 9
- 238000012217 deletion Methods 0.000 claims description 9
- 230000037430 deletion Effects 0.000 claims description 9
- 230000003139 buffering effect Effects 0.000 claims 4
- 230000001960 triggered effect Effects 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 169
- 230000009849 deactivation Effects 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 101150030352 Arsi gene Proteins 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 101100113576 Arabidopsis thaliana CINV2 gene Proteins 0.000 description 2
- 101150110971 CIN7 gene Proteins 0.000 description 2
- 101150110298 INV1 gene Proteins 0.000 description 2
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008672 reprogramming Effects 0.000 description 2
- BDEDPKFUFGCVCJ-UHFFFAOYSA-N 3,6-dihydroxy-8,8-dimethyl-1-oxo-3,4,7,9-tetrahydrocyclopenta[h]isochromene-5-carbaldehyde Chemical compound O=C1OC(O)CC(C(C=O)=C2O)=C1C1=C2CC(C)(C)C1 BDEDPKFUFGCVCJ-UHFFFAOYSA-N 0.000 description 1
- 101100485276 Arabidopsis thaliana XPO1 gene Proteins 0.000 description 1
- 101150060359 CINV1 gene Proteins 0.000 description 1
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 1
- 101000915578 Homo sapiens Zinc finger HIT domain-containing protein 3 Proteins 0.000 description 1
- 101100407739 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PET18 gene Proteins 0.000 description 1
- 241001441724 Tetraodontidae Species 0.000 description 1
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 1
- 102100028598 Zinc finger HIT domain-containing protein 3 Human genes 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7743299 | 1999-03-23 | ||
| JP07743299A JP4413306B2 (ja) | 1999-03-23 | 1999-03-23 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60006177D1 DE60006177D1 (de) | 2003-12-04 |
| DE60006177T2 true DE60006177T2 (de) | 2004-07-29 |
Family
ID=13633857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60006177T Expired - Lifetime DE60006177T2 (de) | 1999-03-23 | 2000-03-23 | Block-löschbare Halbleiterspeicherschaltung mit Ersetzung defekter Speicherblöcke |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6327180B2 (enExample) |
| EP (1) | EP1039388B1 (enExample) |
| JP (1) | JP4413306B2 (enExample) |
| KR (1) | KR100377307B1 (enExample) |
| CN (1) | CN1199188C (enExample) |
| DE (1) | DE60006177T2 (enExample) |
| TW (1) | TWI223267B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
| US6462985B2 (en) | 1999-12-10 | 2002-10-08 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory for storing initially-setting data |
| US6421284B1 (en) * | 2000-05-26 | 2002-07-16 | Hitachi, Limited | Semiconductor device |
| JP2003085993A (ja) * | 2001-09-07 | 2003-03-20 | Toshiba Corp | 不揮発性半導体記憶装置およびその不良救済方法 |
| US7290117B2 (en) * | 2001-12-20 | 2007-10-30 | Hewlett-Packard Development Company, L.P. | Memory having increased data-transfer speed and related systems and methods |
| KR100769800B1 (ko) * | 2001-12-26 | 2007-10-23 | 주식회사 하이닉스반도체 | 멀티 플레인 블럭 어드레스 레지스터 |
| JP4235122B2 (ja) * | 2004-02-06 | 2009-03-11 | シャープ株式会社 | 半導体記憶装置及び半導体記憶装置のテスト方法 |
| CN101006520B (zh) * | 2004-04-21 | 2010-05-05 | 斯班逊有限公司 | 非易失性半导体器件及非易失性半导体器件的擦除动作不良自动救济方法 |
| US7221603B2 (en) * | 2005-05-12 | 2007-05-22 | Micron Technology, Inc. | Defective block handling in a flash memory device |
| JP4761959B2 (ja) * | 2005-12-26 | 2011-08-31 | 株式会社東芝 | 半導体集積回路装置 |
| JP4828938B2 (ja) * | 2005-12-28 | 2011-11-30 | 株式会社東芝 | 不揮発性半導体記憶装置及びその駆動方法 |
| KR100685638B1 (ko) * | 2006-03-31 | 2007-02-22 | 주식회사 하이닉스반도체 | 랜덤 프로그램 기능을 가지는 듀얼 플레인 타입 플래시메모리 장치 및 그 프로그램 동작 방법 |
| KR100769772B1 (ko) | 2006-09-29 | 2007-10-23 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 이를 이용한 소거 방법 |
| JP4985781B2 (ja) * | 2007-11-05 | 2012-07-25 | 富士通株式会社 | 半導体記憶装置およびその制御方法 |
| US7590001B2 (en) * | 2007-12-18 | 2009-09-15 | Saifun Semiconductors Ltd. | Flash memory with optimized write sector spares |
| WO2009116117A1 (ja) * | 2008-03-19 | 2009-09-24 | 富士通マイクロエレクトロニクス株式会社 | 半導体メモリ、システム、半導体メモリの動作方法および半導体メモリの製造方法 |
| US8787086B1 (en) * | 2008-08-29 | 2014-07-22 | The Arizona Board Of Regents For And On Behalf Of Arizona State University | Inhibiting address transitions in unselected memory banks of solid state memory circuits |
| KR101094997B1 (ko) | 2010-07-26 | 2011-12-20 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그 리페어 처리방법 |
| CN102623059B (zh) * | 2011-01-26 | 2015-10-28 | 中国科学院微电子研究所 | 一种半导体存储器件的复位方法 |
| KR101920638B1 (ko) | 2011-12-02 | 2018-11-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US9098628B2 (en) | 2012-07-26 | 2015-08-04 | International Business Machines Corporation | Memory system with multiple block write control to control state data |
| JP6682471B2 (ja) * | 2017-03-24 | 2020-04-15 | キオクシア株式会社 | 半導体記憶装置 |
| US10908824B2 (en) * | 2018-11-08 | 2021-02-02 | Winbond Electronics Corp. | Flash memory storage device and method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3019869B2 (ja) * | 1990-10-16 | 2000-03-13 | 富士通株式会社 | 半導体メモリ |
| JPH05109292A (ja) | 1991-10-14 | 1993-04-30 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2647312B2 (ja) | 1992-09-11 | 1997-08-27 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性半導体記憶装置 |
| US5381370A (en) * | 1993-08-24 | 1995-01-10 | Cypress Semiconductor Corporation | Memory with minimized redundancy access delay |
| JPH07334999A (ja) * | 1994-06-07 | 1995-12-22 | Hitachi Ltd | 不揮発性半導体記憶装置及びデータプロセッサ |
| JP3160160B2 (ja) * | 1994-09-28 | 2001-04-23 | シャープ株式会社 | 半導体記憶装置 |
| JP3263259B2 (ja) | 1994-10-04 | 2002-03-04 | 株式会社東芝 | 半導体記憶装置 |
| US5621690A (en) | 1995-04-28 | 1997-04-15 | Intel Corporation | Nonvolatile memory blocking architecture and redundancy |
| KR0147194B1 (ko) | 1995-05-26 | 1998-11-02 | 문정환 | 반도체 메모리 소자 |
| US5774396A (en) * | 1996-03-29 | 1998-06-30 | Aplus Integrated Circuits, Inc. | Flash memory with row redundancy |
| US5774471A (en) * | 1996-12-17 | 1998-06-30 | Integrated Silicon Solution Inc. | Multiple location repair word line redundancy circuit |
| JP3762114B2 (ja) | 1998-09-08 | 2006-04-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
1999
- 1999-03-23 JP JP07743299A patent/JP4413306B2/ja not_active Expired - Lifetime
-
2000
- 2000-03-07 TW TW089104073A patent/TWI223267B/zh not_active IP Right Cessation
- 2000-03-21 US US09/532,824 patent/US6327180B2/en not_active Expired - Lifetime
- 2000-03-22 KR KR10-2000-0014473A patent/KR100377307B1/ko not_active Expired - Fee Related
- 2000-03-23 CN CNB001043927A patent/CN1199188C/zh not_active Expired - Lifetime
- 2000-03-23 EP EP00105946A patent/EP1039388B1/en not_active Expired - Lifetime
- 2000-03-23 DE DE60006177T patent/DE60006177T2/de not_active Expired - Lifetime
-
2001
- 2001-09-25 US US09/961,429 patent/US6496413B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6327180B2 (en) | 2001-12-04 |
| KR100377307B1 (ko) | 2003-03-26 |
| EP1039388A3 (en) | 2000-10-18 |
| KR20000071465A (ko) | 2000-11-25 |
| DE60006177D1 (de) | 2003-12-04 |
| CN1267888A (zh) | 2000-09-27 |
| JP4413306B2 (ja) | 2010-02-10 |
| TWI223267B (en) | 2004-11-01 |
| US20020012270A1 (en) | 2002-01-31 |
| US6496413B2 (en) | 2002-12-17 |
| EP1039388A2 (en) | 2000-09-27 |
| US20010012216A1 (en) | 2001-08-09 |
| EP1039388B1 (en) | 2003-10-29 |
| JP2000276896A (ja) | 2000-10-06 |
| CN1199188C (zh) | 2005-04-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |