JP4403387B2 - 固体撮像装置および固体撮像装置の駆動方法 - Google Patents

固体撮像装置および固体撮像装置の駆動方法 Download PDF

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Publication number
JP4403387B2
JP4403387B2 JP2004129388A JP2004129388A JP4403387B2 JP 4403387 B2 JP4403387 B2 JP 4403387B2 JP 2004129388 A JP2004129388 A JP 2004129388A JP 2004129388 A JP2004129388 A JP 2004129388A JP 4403387 B2 JP4403387 B2 JP 4403387B2
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Prior art keywords
potential
pixel
reset
signal line
imaging device
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JP2004129388A
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Japanese (ja)
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JP2005311932A (ja
JP2005311932A5 (https=
Inventor
圭司 馬渕
壽史 若野
賢 小関
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Sony Corp
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Sony Corp
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Priority to JP2004129388A priority Critical patent/JP4403387B2/ja
Priority to TW94112725A priority patent/TWI272718B/zh
Priority to EP10010103.9A priority patent/EP2268003A3/en
Priority to KR20050033910A priority patent/KR101133834B1/ko
Priority to EP20050009015 priority patent/EP1592230A3/en
Priority to US11/113,633 priority patent/US7675095B2/en
Priority to CN2005100792158A priority patent/CN1691347B/zh
Publication of JP2005311932A publication Critical patent/JP2005311932A/ja
Publication of JP2005311932A5 publication Critical patent/JP2005311932A5/ja
Application granted granted Critical
Priority to US12/694,336 priority patent/US8008697B2/en
Publication of JP4403387B2 publication Critical patent/JP4403387B2/ja
Priority to US13/166,891 priority patent/US8618589B2/en
Priority to US14/087,295 priority patent/US9029925B2/en
Priority to US14/619,587 priority patent/US9865633B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2004129388A 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法 Expired - Lifetime JP4403387B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2004129388A JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法
TW94112725A TWI272718B (en) 2004-04-26 2005-04-21 Solid-state imaging device and driving method therefor
KR20050033910A KR101133834B1 (ko) 2004-04-26 2005-04-25 고체 촬상 장치 및 고체 촬상 장치의 구동 방법
EP20050009015 EP1592230A3 (en) 2004-04-26 2005-04-25 Solid-state imaging device and driving method therefor
US11/113,633 US7675095B2 (en) 2004-04-26 2005-04-25 Solid-state imaging device and driving method therefor
EP10010103.9A EP2268003A3 (en) 2004-04-26 2005-04-25 Solid-state imaging device and driving method therefor
CN2005100792158A CN1691347B (zh) 2004-04-26 2005-04-26 固态成像器件及其驱动方法
US12/694,336 US8008697B2 (en) 2004-04-26 2010-01-27 Solid-state imaging device and driving method therefor
US13/166,891 US8618589B2 (en) 2004-04-26 2011-06-23 Solid-state imaging device and driving method therefor
US14/087,295 US9029925B2 (en) 2004-04-26 2013-11-22 Solid-state imaging device and driving method thereof
US14/619,587 US9865633B2 (en) 2004-04-26 2015-02-11 Solid-state imaging device and driving method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004129388A JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法

Publications (3)

Publication Number Publication Date
JP2005311932A JP2005311932A (ja) 2005-11-04
JP2005311932A5 JP2005311932A5 (https=) 2007-05-17
JP4403387B2 true JP4403387B2 (ja) 2010-01-27

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JP2004129388A Expired - Lifetime JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法

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Country Link
US (5) US7675095B2 (https=)
EP (2) EP2268003A3 (https=)
JP (1) JP4403387B2 (https=)
KR (1) KR101133834B1 (https=)
CN (1) CN1691347B (https=)
TW (1) TWI272718B (https=)

Cited By (1)

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US9497359B2 (en) 2014-05-08 2016-11-15 Olympus Corporation Solid-state imaging apparatus and endoscope apparatus

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JP4713997B2 (ja) * 2005-10-28 2011-06-29 株式会社東芝 固体撮像装置
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JP5262512B2 (ja) 2008-09-25 2013-08-14 ソニー株式会社 撮像素子およびその制御方法並びにカメラ
JP5257176B2 (ja) * 2009-03-18 2013-08-07 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP2011044879A (ja) * 2009-08-20 2011-03-03 Toshiba Corp 固体撮像装置およびその駆動方法
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JP2013062611A (ja) * 2011-09-12 2013-04-04 Sony Corp 固体撮像素子およびカメラシステム
CN104412387B (zh) * 2012-06-27 2017-11-21 松下知识产权经营株式会社 固体摄像装置
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JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
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CN112532899B (zh) * 2020-11-27 2023-06-30 京东方科技集团股份有限公司 光电转换电路、驱动方法、光电检测基板、光电检测装置

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Also Published As

Publication number Publication date
EP1592230A3 (en) 2007-01-10
US20140077068A1 (en) 2014-03-20
US9029925B2 (en) 2015-05-12
US7675095B2 (en) 2010-03-09
TWI272718B (en) 2007-02-01
KR101133834B1 (ko) 2012-04-06
JP2005311932A (ja) 2005-11-04
EP2268003A2 (en) 2010-12-29
TW200605342A (en) 2006-02-01
CN1691347B (zh) 2010-06-16
EP2268003A3 (en) 2016-10-05
US8618589B2 (en) 2013-12-31
US8008697B2 (en) 2011-08-30
CN1691347A (zh) 2005-11-02
US20050248674A1 (en) 2005-11-10
US9865633B2 (en) 2018-01-09
EP1592230A2 (en) 2005-11-02
KR20060045825A (ko) 2006-05-17
US20110248148A1 (en) 2011-10-13
US20150155317A1 (en) 2015-06-04
US20100128153A1 (en) 2010-05-27

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