CN1691347B - 固态成像器件及其驱动方法 - Google Patents

固态成像器件及其驱动方法 Download PDF

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Publication number
CN1691347B
CN1691347B CN2005100792158A CN200510079215A CN1691347B CN 1691347 B CN1691347 B CN 1691347B CN 2005100792158 A CN2005100792158 A CN 2005100792158A CN 200510079215 A CN200510079215 A CN 200510079215A CN 1691347 B CN1691347 B CN 1691347B
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China
Prior art keywords
potential
pixel
reset
transistor
level
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Expired - Fee Related
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CN2005100792158A
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English (en)
Chinese (zh)
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CN1691347A (zh
Inventor
马渕圭司
若野寿史
小关贤
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Sony Corp
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Sony Corp
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Publication of CN1691347A publication Critical patent/CN1691347A/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2005100792158A 2004-04-26 2005-04-26 固态成像器件及其驱动方法 Expired - Fee Related CN1691347B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004129388A JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法
JP129388/04 2004-04-26

Publications (2)

Publication Number Publication Date
CN1691347A CN1691347A (zh) 2005-11-02
CN1691347B true CN1691347B (zh) 2010-06-16

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CN2005100792158A Expired - Fee Related CN1691347B (zh) 2004-04-26 2005-04-26 固态成像器件及其驱动方法

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US (5) US7675095B2 (https=)
EP (2) EP2268003A3 (https=)
JP (1) JP4403387B2 (https=)
KR (1) KR101133834B1 (https=)
CN (1) CN1691347B (https=)
TW (1) TWI272718B (https=)

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CN104412387B (zh) * 2012-06-27 2017-11-21 松下知识产权经营株式会社 固体摄像装置
CN103986889B (zh) * 2013-02-08 2017-06-13 豪威科技股份有限公司 用于传感器故障检测的系统及方法
JP2015088691A (ja) * 2013-11-01 2015-05-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
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JP6242287B2 (ja) 2014-05-08 2017-12-06 オリンパス株式会社 固体撮像装置および内視鏡装置
US10104322B2 (en) 2014-07-31 2018-10-16 Invisage Technologies, Inc. Image sensors with noise reduction
JP6537838B2 (ja) * 2015-01-30 2019-07-03 ルネサスエレクトロニクス株式会社 撮像素子
JP6486151B2 (ja) * 2015-03-05 2019-03-20 キヤノン株式会社 撮像システム
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JP6832649B2 (ja) * 2016-08-17 2021-02-24 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
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CN112532899B (zh) * 2020-11-27 2023-06-30 京东方科技集团股份有限公司 光电转换电路、驱动方法、光电检测基板、光电检测装置

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Also Published As

Publication number Publication date
EP1592230A3 (en) 2007-01-10
US20140077068A1 (en) 2014-03-20
US9029925B2 (en) 2015-05-12
US7675095B2 (en) 2010-03-09
TWI272718B (en) 2007-02-01
KR101133834B1 (ko) 2012-04-06
JP2005311932A (ja) 2005-11-04
EP2268003A2 (en) 2010-12-29
TW200605342A (en) 2006-02-01
EP2268003A3 (en) 2016-10-05
US8618589B2 (en) 2013-12-31
US8008697B2 (en) 2011-08-30
CN1691347A (zh) 2005-11-02
US20050248674A1 (en) 2005-11-10
JP4403387B2 (ja) 2010-01-27
US9865633B2 (en) 2018-01-09
EP1592230A2 (en) 2005-11-02
KR20060045825A (ko) 2006-05-17
US20110248148A1 (en) 2011-10-13
US20150155317A1 (en) 2015-06-04
US20100128153A1 (en) 2010-05-27

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Termination date: 20200426