TWI272718B - Solid-state imaging device and driving method therefor - Google Patents

Solid-state imaging device and driving method therefor Download PDF

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Publication number
TWI272718B
TWI272718B TW94112725A TW94112725A TWI272718B TW I272718 B TWI272718 B TW I272718B TW 94112725 A TW94112725 A TW 94112725A TW 94112725 A TW94112725 A TW 94112725A TW I272718 B TWI272718 B TW I272718B
Authority
TW
Taiwan
Prior art keywords
potential
pixel
transistor
reset
level
Prior art date
Application number
TW94112725A
Other languages
English (en)
Chinese (zh)
Other versions
TW200605342A (en
Inventor
Keiji Mabuchi
Toshifumi Wakano
Ken Koseki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200605342A publication Critical patent/TW200605342A/zh
Application granted granted Critical
Publication of TWI272718B publication Critical patent/TWI272718B/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW94112725A 2004-04-26 2005-04-21 Solid-state imaging device and driving method therefor TWI272718B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004129388A JP4403387B2 (ja) 2004-04-26 2004-04-26 固体撮像装置および固体撮像装置の駆動方法

Publications (2)

Publication Number Publication Date
TW200605342A TW200605342A (en) 2006-02-01
TWI272718B true TWI272718B (en) 2007-02-01

Family

ID=34935686

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94112725A TWI272718B (en) 2004-04-26 2005-04-21 Solid-state imaging device and driving method therefor

Country Status (6)

Country Link
US (5) US7675095B2 (https=)
EP (2) EP2268003A3 (https=)
JP (1) JP4403387B2 (https=)
KR (1) KR101133834B1 (https=)
CN (1) CN1691347B (https=)
TW (1) TWI272718B (https=)

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Also Published As

Publication number Publication date
EP1592230A3 (en) 2007-01-10
US20140077068A1 (en) 2014-03-20
US9029925B2 (en) 2015-05-12
US7675095B2 (en) 2010-03-09
KR101133834B1 (ko) 2012-04-06
JP2005311932A (ja) 2005-11-04
EP2268003A2 (en) 2010-12-29
TW200605342A (en) 2006-02-01
CN1691347B (zh) 2010-06-16
EP2268003A3 (en) 2016-10-05
US8618589B2 (en) 2013-12-31
US8008697B2 (en) 2011-08-30
CN1691347A (zh) 2005-11-02
US20050248674A1 (en) 2005-11-10
JP4403387B2 (ja) 2010-01-27
US9865633B2 (en) 2018-01-09
EP1592230A2 (en) 2005-11-02
KR20060045825A (ko) 2006-05-17
US20110248148A1 (en) 2011-10-13
US20150155317A1 (en) 2015-06-04
US20100128153A1 (en) 2010-05-27

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